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I-4h-Sic iye yathengiswa njengento ebonakalayo yamadivayisi we-semiconductor. Kodwa-ke, ukuthembeka kwesikhathi eside kwamadivayisi we-4hh-Sic kuyinto isithiyo esicelweni sabo esibanzi, kanye nenkinga ebaluleke kakhulu yokwethembeka kwamadivayisi we-4hh-soic ukucekelwa phansi kwe-4hh. Lokhu kusulwa kubangelwa iphutha elilodwa lokufaka isitaki (1SSF) lokusakazwa kwe-basal Plane ku-4h-Sic Crystals. Lapha, siphakamisa indlela yokucindezela ukunwebeka kwe-1SSF ngamaphrofashini afaka ama-epitaxial weafers angu-4h-sic epitaxial. I-PINIPIORE EMIPHESO YAMAHHALA E-WAFERS nge-Proton Imptantation ikhombise izici ezifanayo zamandla kagesi njengama-diodes ngaphandle kokufakwa kwamaphrothon. Ngokuphambene nalokho, ukunwetshwa kwe-1SSF kucindezelwa ngempumelelo kwi-PIN PIN DIODE. Ngakho-ke, ukufakwa kwama-protons ku-4h-Sic Epitaxial Wafers kuyindlela ephumelelayo yokucindezela ukucekelwa phansi kwe-bipolar kwamadivayisi we-semiconductor we-4h-sic ngenkathi kugcinwa ukusebenza kwensiza. Lo mphumela unesandla ekuthuthukisweni kwamadivayisi athembekile we-4h-soc.
I-Silicon Carbide (SIC) yaziwa kabanzi njengezinto ze-semiconductor zamandla aphezulu, amadivaysi afudumele afinyelela ama-semiconductor angasebenza ezindaweni ezinokhahlo1. Kunama-polytypes amaningi ama-syytypes, phakathi kwawo i-4h-Sic enezinto ezinhle kakhulu zemishini ye-semiconductor enjengokuhamba okuphezulu kwe-elektroni kanye nokuqhekeka kukagesi okuqinile2. I-4h-Sic Wafers ene-amayintshi ayi-6 amayintshi njengamanje athengiswayo futhi asetshenziselwa ukukhiqizwa kwabantu abaningi bamadivayisi we-miconductor3. Izinhlelo zeTraction zezimoto zikagesi nezitimela zakhiwa kusetshenziswa amadivaysi we-4h-Sic4.5. Kodwa-ke, amadivaysi ama-4h-soic asahlushwa izingqinamba ezethembekile ezifana nokuqhekeka kwe-dielectric noma ukuthembeka kwesizungu esifushane, abangu-6,7 lapho kungenxa yezinkinga ezibaluleke kakhulu ze-bipolar deftadation2,8,9,10,11. Lokhu kuncipha okuguquguqukayo kwe-bipolar kwatholakala eminyakeni engaphezu kwengu-20 edlule futhi sekuyisikhathi eside bekuyinkinga ekwakhiweni kwensiza ye-SIC.
Ukuwohloka kwe-bipolar kubangelwa yisiphepho esingokwesiko esisodwa (1SSF) kumakristalu ama-4h-sic nge-Basal Plane Discomations (BPDS) Ukusakazwa ngokubuyiselwa kabusha kwe-Discuration Glinide (Redg) 12,13,17,15,19,18,18,19. Ngakho-ke, uma ukwandiswa kwe-BPD kucindezelwa ku-1SSF, amadivaysi kagesi we-4h-Sic angakhiwa ngaphandle kokucekelwa phansi okuguquguqukayo. Izindlela eziningana zibikwe ukuthi zicindezela ukusakazeka kwe-BPD, njenge-BPD ku-Throad Edge asloaction (TED) Ushintsho 20,21,22,23,24. Ku-Epitaxial Waters yakamuva, i-BPD ikakhulukazi ikhona engxenyeni engezansi hhayi eqenjini le-epitaxial ngenxa yokuguqulwa kwe-BPD ku-TED ngesikhathi sokukhula kwesi-Epitaxial. Ngakho-ke, inkinga esele yokuwohloka kwe-bipolar ukusatshalaliswa kwe-BPD ku-substrate 25,26,27. Ukufakwa kwesendlalelo "se-composite ukuqinisa ungqimba" phakathi kwe-Drift ungqimba kanye ne-substrate kuhlongozwe njengendlela ephumelelayo yokucindezela ukwanda kwe-BPD endaweni ephakeme ye-Epitaxial ungqimba kanye ne-sic substrate. Ukunciphisa inani lababili lababili le-elektroni kunciphisa amandla okushayela e-BPD ku-BPD ku-substrate, ngakho-ke ungqimba lokuqinisa i-composite lungacindezela ukucekelwa phansi kwe-bipolar. Kumele kwaziwe ukuthi ukufakwa kwesendlalelo kufaka izindleko ezingezekile ekukhiqizeni ama-wafers, futhi ngaphandle kokufakwa kwesendlalelo kunzima ukunciphisa inani lababili le-elektroni ngokulawula kuphela ukulawulwa kwempilo ye-elektroni. Ngakho-ke, kusekhona isidingo esinamandla sokuthuthukisa ezinye izindlela zokucindezelwa ukufeza ukulingana okungcono phakathi kwezindleko zokukhiqiza izinsiza kanye nesivuno.
Ngoba ukunwetshwa kwe-BPD ku-1SSF kudinga ukunyakaza kokubeletha okuyingxenye (ama-PD), ukukhonkotha i-PD kuyindlela ethembisayo yokuvimbela ukonakala kwe-bipolar. Yize i-PD incon ngokungcola kwensimbi ibikiwe, ama-FPD ku-4h-sic subrustrates atholakala kude ngaphezu kwama-5 μm avela ebusweni besendlalelo se-Epitaxial. Ngaphezu kwalokho, njengoba i-coeffsion ehlanganisiwe yanoma iyiphi insimbi ku-SIC incane kakhulu, kunzima ukungcola kwensimbi ukuhlukanisa i-substrate34. Ngenxa yobuningi be-atomic enkulu ye-atomic, ukufakwa kwezinsimbi nakho kunzima. Ngokuphambene nalokho, endabeni ye-hydrogen, into elula kunazo zonke, i-ion (amaprotoni) ingafakwa ku-4h-sic ekujuleni okungaphezulu kwe-10 μM kusetshenziswa i-accelerator engaphezulu kwe-10 μM esebenzisa i-MEV-Class Accelerator. Ngakho-ke, uma ukufakwa kweproton kuthinta i-PD PINING, khona-ke ingasetshenziswa ukucindezela ukusakazeka kwe-BPD ku-substrate. Kodwa-ke, ukufakwa kwe-proton kungalimaza i-4hh-sic futhi kuholele ekunciphiseni umsebenzi wedivayisi37,38,39,40.
Ukunqoba ukucekelwa phansi kwedivayisi ngenxa yokufakwa kwe-proton, ukufakwa okushisa okuphezulu kusetshenziselwa ukulungisa umonakalo, okufana ne-anveling indlela esetshenziswayo ngemuva kokushisa kwama-athomu we-hydrogen ngenxa yokushisa ama-athomu aphezulu, kungenzeka ukuthi kuphela ukuncipha kwama-athomu we-hydrogen eduze kwe-FD akwanele Thola ukukhonkotha kwe-PR usebenzisa ama-Sims. Ngakho-ke, kulolu cwaningo, sifaka amaproton afaka ama-epitaxial we-4h-sic epitaxial ngaphambi kwenqubo yokufakelwa kwensiza, kufaka phakathi ukufudumala okuphezulu. Sisebenzise i-PIN PINIODE njengezakhiwo zedivayisi yokuhlola futhi zizisebenzise kuma-proton-sic epitaxial wafers. Sibe sesibona izici ze-Volt-Ampere ukutadisha ukonakala kokusebenza kwensiza ngenxa yokujova kwe-proton. Ngemuva kwalokho, sabona ukwanda kwe-1SSF ku-ElectrolUminescence izithombe (el) izithombe ngemuva kokusebenzisa i-voltage kagesi kwi-pin diode. Ekugcineni, sakuqinisekisa umphumela womjovo we-proton ekucindezelweni kokwandiswa kwe-1SSF.
Ku-Fig. Umdwebo 1 ukhombisa izici zamanje zamandla kagesi (CVCs) wePin Disoes emazingeni okushisa asekamelweni ezifundeni futhi ngaphandle kweproton ukufakwa ngaphambi kokukhishwa kwamanje. I-PIN PINIODES enemijovo ye-proton i-Recling show rectification izici ezifana nama-diodes ngaphandle komjovo we-proton, noma ngabe izici ze-IV zikwabiwa phakathi kwama-diode. Ukukhombisa umehluko phakathi kwemibandela yomjovo, sakha imvamisa kagesi ngokuningiliziwe kwamanje ka-2,5 A / cm2 (okuhambelana ne-100 ma) njengoba kukhonjisiwe ku-Figured. umugqa. Njengoba kungabonakala eziqongweni zama-curves, ukumelana nokumelana kancane kancane ku-proton doses ka-1014 no-1016 cm-2, ngenkathi iPIN diode nge-protoon umthamo ka-1012 cm-2 ikhombisa cishe izici ezifanayo ngaphandle kwamaphrotheni. Siphinde sasebenzisa ukufakwa kwamaphrothon ngemuva kokuqanjwa kwama-din disoode angakhombisanga i-electrolormmcorm yomfaniswano ngenxa yomonakalo odalwe ukufakwa kwamaphrotheni njengoba kukhonjisiwe kwizifundo ezedlule37,38,39. Ngakho-ke, ukunxusa ngo-1600 ° C ngemuva kokufakwa kwe-Al Ion kuyinqubo edingekayo yokwenza amadivaysi okwenza kusebenze ukwamukelwa kwe-AL, okwenza ama-CVC afane ne-Pinali efakiwe kanye ne-Implencred Dison Imvamisa yamanje ye-At -5 V nayo yethulwa kuMdwebo we-S2, akukho mehluko obalulekile phakathi kokudilizwa ngaphandle futhi ngaphandle komjovo wephrothoni.
Izici ze-Volt-Ampere zePin Disoes futhi ngaphandle kokuchithwa ama-protons ajoyine emazingeni okushisa asekamelweni. Inganekwane ikhombisa umthamo wama-protons.
Imvamisa yeVoltage eDirect yamanje engu-2,5 A / CM2 yama-pin disones anamaphrotheni ajovelwe futhi angenakulwa. Umugqa wamachashazi uhambelana nokusatshalaliswa okujwayelekile.
Ku-Fig. I-3 ikhombisa isithombe se-el ye-pin didiode ene-density yamanje yama-25 A / CM2 ngemuva kwe-voltage. Ngaphambi kokufaka isicelo somthwalo wamanje, izifunda ezimnyama ze-diode azibonwa, njengoba kukhonjisiwe kuMfanekiso 3. C2. Kodwa-ke, njengoba kukhonjisiwe ku-Fig. I-3a, kwi-pin diode ngaphandle kokufakwa kwamaphrothon, izifunda ezimbalwa ezinemichilo emnyama enemiphetho ekhanyayo yagcinwa ngemuva kokusebenzisa ivola kagesi. Izifunda ezinobumnyama obunjalo babunjiwe zibhekwe ezithombeni ze-El ze-1SSF ezivela ku-BPD ku-substrate28,29. Esikhundleni salokho, amanye amaphutha akhulisiwe enwetshiwe abonwa ngoPin Disos ngamaprotoni afakiwe, njengoba kukhonjisiwe ku-Fig. 3b-D. Usebenzisa i-Topography ye-X-ray, sikuqinisekisile ukuba khona kwama-PRS angasuka kwi-BPD eya engxenyeni ye-perstrate yoxhumana nabo ePinadi zikhonjiswe kwizibalo 1 no-2. Amavidiyo S3-S6 angena futhi ngaphandle kwezindawo ezimnyama ezinwetshiwe (izithombe ezishintsha isikhathi ze-Pin Disos ngaphandle komjovo wePin Pin.
Izithombe ze-El ze-PIN PINOIDE AMA-25 A / CM2 ngemuva kwamahora ama-2 wokuxineka kukagesi (a) ngaphandle kokufakwa kwe-proton kanye nemithamo efakiwe (b) 1012 cm-2, (c) 1012 cm-214 cm-216 cm-2
Sibale ubuntu be-1SSF enwetshiwe ngokubala izindawo ezimnyama ezinemiphetho ekhanyayo emidlalweni emithathu yePin Pin.
Ukwanda kwezinye izisulu ze-SF PIN PINOWUS futhi ngaphandle kokufakwa kwamaphrothon ngemuva kokulayisha nge-Pulsed yamanje (izwe ngalinye lifaka ama-diode amathathu alayishiwe).
Ukunciphisa isikhathi sokuphila kwenkampani kuthinta nokucindezela kokunwebeka, kanye nomjovo we-proton kunciphisa impilo yenkampani yenethiwekhi32,36. Sibonile isikhathi sokuphila se-Carriers ku-Epitaxial ungqimba ama-60 μm ubukhulu ngamaprotheni ajobelwe ka-1014 cm-2. Ukusuka esikhathini sokuphila sokuqala, yize ukufakwa kunciphisa inani ku ~ 10%, ukunxusa okulandelayo kubuyisele ku ~ 50%, njengoba kukhonjisiwe ku-Fig. S7. Ngakho-ke, isikhathi sokuphila se-carrier, sincishisiwe ngenxa yokufakwa kweproton, sibuyiselwe ngokushisa okushisa kakhulu. Yize ukuncishiswa kwama-50% empilweni yenethiwekhi futhi kucindezela ukusakazwa kwamaphutha okufaka, izici ze-I-V, ezincike kakhulu empilweni yenethiwekhi, zibonisa umehluko omncane kuphela phakathi kwezifo ezijobelwe kanye nezingafakwanga. Ngakho-ke, sikholwa ukuthi i-PD anCharoring idlala indima ekuvinjezeleni ukunwetshwa kwe-1SSF.
Yize ama-sims awatholanga ama-hydrogen ngemuva kokukhulisa ngo-1600 ° C, njengoba kubikwe ukuthi kufundwe ama-hydrogen ngokucindezelwa ngaphansi komkhawulo we-sims (2 × 1016 cm-3) noma amaphutha akhomba ukufakwa. Kumele kwaziwe ukuthi asiqinisekisile ukwanda kokumelana nombuso ngenxa yokugcwala kwe-1SSSF ngemuva kokufaka umthwalo wamanje. Lokhu kungahle kube ngenxa yokuxhumana nabantu abangama-Ohmic abangaphelele okwenziwe besebenzisa inqubo yethu, okuzosuswa maduze.
Sengiphetha, sakha indlela yokuhlanza yokwengeza i-BPD ku-1SSF ku-4h-Sic Pin Pin Pin Disoodes usebenzisa i-Proton Implation ngaphambi kokufakwa kwensiza. Ukuwohloka kwesimo se-I-V ngesikhathi sokufakwa kweproton akubalulekile, ikakhulukazi emthonjeni we-proton we-1012 cm-2, kodwa umphumela wokucindezela ukunwebeka kwe-1SSFF kubalulekile. Yize kulolu cwaningo senziwa ama-10 μm ama-pin pin disoni afakwe ekujuleni kokujula kwe-10 μm, kusenokwenzeka ukuthuthukisa izimo zokufakelwa futhi uzisebenzise ukwenza ezinye izinhlobo zamadivayisi we-4h-soic. Izindleko ezingezekile zokuqanjwa kwamadivaysi ngesikhathi sokufakwa kwe-proton kufanele kubhekwe, kepha zizofana nalezo zokufakwa kwe-aluminium ion, okuyinqubo ephambili yokuqamba amadivayisi wamandla we-4h-Sic. Ngakho-ke, ukufakwa kwephrothulo ngaphambi kokucutshungulwa kwamadivayisi kuyindlela engaba khona yokuqamba amadivayisi wamandla we-4h-sic bipolar ngaphandle kokuwohloka.
Uhlobo lwe-4-inch n-sic wafer nge-epitaxial ungqimba usayizi we-10 μm kanye ne-doping doping yokuqoshwa kwe-1 × 1016 cm-3 kusetshenziswe njengesampula. Ngaphambi kokucubungula insiza, i-H + ion yafakwa epuletini elinamandla okushisa okushisa okungu-0.95 mev ezindaweni zokushisa zasekamelweni kuya ekujuleni okungama-10 μm endaweni evamile yepuleti. Ngesikhathi sokufakwa kwe-proton, kwasetshenziswa imaski epuletini, futhi ipuleti lalinezingxenye ngaphandle nangezithonjana ze-1012, 1014, noma i-1016 cm-2. Ngemuva kwalokho, ama-al ions nge-protoon imithamo ka-1020 no-1017 cm-3 afakwe kulo lonke u-wafer ukujula okungu-0-0.2 μm no-0.2-0.5 μM μM. -Ya. Kamuva, oxhumana naye wasemuva u-NI wafakwa ohlangothini lwe-substrate, ngenkathi oxhumene ne-ab 2.0 mm oxhumene ne-TI / AL mm Ekugcineni, ukuxhumeka kwenziwa kwenziwa emazingeni okushisa angama-700 ° C. Ngemuva kokusika i-wafer kuma-chip, senze isimilo sokucindezela kanye nesicelo.
Izici ze-I-V ze-PIN ye-PIN yeCip Domas zaqashelwa kusetshenziswa i-HP41555BB semiconductor parameter anameter. Njengokucindezelwa kukagesi, i-10-millesecond idonswe njengamanje ka-212.5 A / CM2 yethulwa amahora ama-2 ngesikhathi sokuvama kwama-pulses ayi-10 / sec. Lapho sikhetha ukuqina okuphansi kwamanje noma imvamisa, asigcinanga ukunwetshwa kwe-1SSF noma ku-pin diode ngaphandle komjovo we-proton. Ngesikhathi sokusebenza kukagesi okusetshenzisiwe, izinga lokushisa le-PIN DIOD licishe libe ngu-70 ° C ngaphandle kokushisa ngenhloso, njengoba kukhonjisiwe kuMfanekiso S8. Izithombe ze-elektroluminescent zatholakala ngaphambi nangemva kwengcindezi kagesi esenzweni samanje sama-25 A / CM2. I-Synchrotron Reflection Droling X-ray i-Topography usebenzisa i-monochromatic x-ray beam (λ = 0.15 nm) esikhungweni semisebe ye-AICHI Synchrotron Radiation Center, i-Ag Vector ku-BL8S2 ingu-11-28 (bheka i-Ref. 44 ngemininingwane). ).
Imvamisa ye-voltage ekwakhiweni kwamanje kwe-2,5 A / CM2 ikhishwe ngesikhawu se-0.5 v ku-Fig. 2 Ngokusho kwe-CVC yesimo ngasinye se-PIN DIODE. Kusuka kunani elishiwoyo le-Stress Vave kanye nokuphambuka okujwayelekile kwengcindezi, sihlela ijika elijwayelekile lokusabalalisa ngesimo somugqa wamachashazi kuMfanekiso 2 usebenzisa i-equation elandelayo:
I-Werner, Mnu & Fahrner, i-WR & BREB isibuyekezo ngezinto zokwenziwa, ngokwezimpawu, amasistimu namadivayisi wokushisa okushisa kanye ne-hash-having application. I-Werner, Mnu & Fahrner, i-WR & BREB isibuyekezo ngezinto zokwenziwa, ngokwezimpawu, amasistimu namadivayisi wokushisa okushisa kanye ne-hash-having application.UWerner, uMnu kanye Farner, wabhala ngokubuka konke ngezinto zokwakha, izicathulo, amasistimu namadivayisi okufaka izicelo zokushisa okuphezulu nendawo enokhahlo. UWerner, Mnu & Fahrner, wr, 微传感器, 系统和设备的评论. I-Werner, Mnu & Fahrner, i-WR Ukubuyekezwa kwezinto zokwakha, izimangaliso, amasistimu namadivayisi okushisa okushisa kanye nezicelo ezingezinhle zemvelo.UWerner, uMnu kanye Farner, wabhala ngokubuka konke ngezinto zokwakha, izicathulo, amasistimu namadivayisi okufaka izicelo emazingeni okushisa aphezulu nezimo ezinzima.Iee trans. Ama-elekthronikhi wezimboni. 48, 249-257 (2001).
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Isikhathi sePosi: Nov-06-2022
