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I-4H-SiC idayiswe njengempahla yamadivayisi we-semiconductor yamandla. Kodwa-ke, ukwethembeka kwesikhathi eside kwamadivayisi we-4H-SiC kuyisithiyo ekusebenzeni kwawo okubanzi, futhi inkinga ebaluleke kakhulu yokuthembeka yamadivayisi we-4H-SiC ukuwohloka kwe-bipolar. Lokhu konakala kubangelwa iphutha elilodwa le-Shockley stacking (1SSF) lokuhlukaniswa kwendiza ye-basal kumakristalu e-4H-SiC. Lapha, siphakamisa indlela yokucindezela ukunwetshwa kwe-1SSF ngokufaka ama-proton kuma-4H-SiC epitaxial wafers. Ama-PiN diode akhiwe kuma-wafer afakwe i-proton abonise izici ezifanayo zamanje ze-voltage njengama-diode ngaphandle kokufakwa kwe-proton. Ngokuphambene, ukunwetshwa kwe-1SSF kucindezelwa ngempumelelo ku-PiN diode efakwe i-proton. Ngakho-ke, ukufakwa kwama-protons kuma-4H-SiC epitaxial wafers kuyindlela ephumelelayo yokucindezela ukuwohloka kwe-bipolar yamadivayisi we-4H-SiC we-semiconductor yamandla ngenkathi kugcinwa ukusebenza kwedivayisi. Lo mphumela unomthelela ekwakhiweni kwamadivayisi athembeke kakhulu e-4H-SiC.
I-Silicon carbide (i-SiC) yaziwa kabanzi njengempahla ye-semiconductor yamadivayisi anamandla amakhulu, ama-high-frequency semiconductor angasebenza ezindaweni ezinokhahlo1. Kunama-polytypes amaningi e-SiC, phakathi kwawo i-4H-SiC enezakhiwo ezibonakalayo zedivayisi ye-semiconductor efana nokuhamba kwe-electron ephezulu kanye nensimu kagesi ephukile eqinile2. Amawafa e-4H-SiC anobubanzi obungama-intshi angu-6 okwamanje ayathengiswa futhi asetshenziselwa ukukhiqizwa ngobuningi bamadivayisi e-semiconductor yamandla3. Amasistimu okudonsa izimoto zikagesi nezitimela zenziwa kusetshenziswa amadivaysi e-semiconductor yamandla e-4H-SiC4.5. Kodwa-ke, amadivaysi e-4H-SiC asalokhu ehlushwa izinkinga zokwethenjelwa zesikhathi eside njengokuwohloka kwe-dielectric noma ukuthembeka kwesifunda esifushane, i-6,7 enye yezinkinga ezibaluleke kakhulu zokuthembeka i-bipolar degradation2,8,9,10,11. Lokhu kucekelwa phansi kwe-bipolar kwatholakala eminyakeni engu-20 edlule futhi sekuyisikhathi eside kuyinkinga ekwenziweni kwedivayisi ye-SiC.
Ukuwohloka kwe-bipolar kubangelwa isici esisodwa se-Shockley stack (1SSF) kumakristalu e-4H-SiC ane-basal plane dislocations (BPDs) esakazeka ngokuhlanganisa kabusha okuthuthukisiwe kokukhipha i-slocation glide (REDG)12,13,14,15,16,17,18,19. Ngakho-ke, uma ukunwetshwa kwe-BPD kucindezelwa ku-1SSF, amadivayisi kagesi we-4H-SiC angenziwa ngaphandle kokuwohloka kwe-bipolar. Kubikwe izindlela ezimbalwa zokucindezela ukusakazeka kwe-BPD, njenge-BPD kuya ku-Thread Edge Dislocation (TED) ukuguqulwa okungu-20,21,22,23,24. Kuma-wafers e-SiC epitaxial wakamuva, i-BPD itholakala ngokuyinhloko ku-substrate hhayi kungqimba lwe-epitaxial ngenxa yokuguqulwa kwe-BPD ku-TED ngesikhathi sesigaba sokuqala sokukhula kwe-epitaxial. Ngakho-ke, inkinga esele yokuwohloka kwe-bipolar ukusatshalaliswa kwe-BPD ku-substrate engu-25,26,27. Ukufakwa "kwesendlalelo esiqinisayo esiyinhlanganisela" phakathi kwesendlalelo sokukhukhuleka kanye ne-substrate kuhlongoziwe njengendlela esebenzayo yokucindezela ukunwetshwa kwe-BPD ku-substrate28, 29, 30, 31. Lesi sendlalelo sandisa amathuba okuphinda kuhlanganiswe ipheya ye-electron-hole i-epitaxial layer kanye ne-SiC substrate. Ukunciphisa inani lamapheya e-electron-hole kunciphisa amandla okushayela e-REDG kuya ku-BPD ku-substrate, ngakho ungqimba oluyinhlanganisela lokuqinisa lungacindezela ukuwohloka kwe-bipolar. Kumele kuqashelwe ukuthi ukufakwa kwesendlalelo kuhlanganisa izindleko ezengeziwe ekukhiqizeni ama-wafers, futhi ngaphandle kokufaka ungqimba kunzima ukunciphisa inani lamapheya e-electron-hole ngokulawula kuphela ukulawulwa kwesikhathi sokuphila komthwali. Ngakho-ke, kusenesidingo esinamandla sokuthuthukisa ezinye izindlela zokucindezela ukuze kuzuzwe ibhalansi engcono phakathi kwezindleko zokukhiqiza idivayisi kanye nesivuno.
Ngenxa yokuthi ukunwetshwa kwe-BPD kuya ku-1SSF kudinga ukunyakaza kokususwa kwengxenye (PDs), ukuphina i-PD kuyindlela ethembisayo yokuvimbela ukuwohloka kwe-bipolar. Nakuba ukuphinwa kwe-PD ngokungcola kwensimbi kuye kwabikwa, ama-FPD kuma-substrates angu-4H-SiC atholakala ebangeni elingaphezu kuka-5 μm ukusuka ebusweni bengqimba ye-epitaxial. Ngaphezu kwalokho, njengoba i-coefficient yokusabalalisa yanoma iyiphi insimbi ku-SiC incane kakhulu, kunzima ukuthi ukungcola kwensimbi kusakazeke ku-substrate34. Ngenxa yobuningi be-athomu yensimbi, ukufakwa kwe-ion yezinsimbi nakho kunzima. Ngokuphambene, esimweni se-hydrogen, i-elementi elula kakhulu, ama-ion (ama-proton) angafakwa ku-4H-SiC ekujuleni okungaphezu kuka-10 µm kusetshenziswa i-accelerator ye-MeV-class. Ngakho-ke, uma ukufakwa kwe-proton kuthinta ukuphina kwe-PD, khona-ke kungasetshenziswa ukucindezela ukusakazeka kwe-BPD ku-substrate. Nokho, ukufakwa kwe-proton kungalimaza i-4H-SiC futhi kuphumele ekunciphiseni ukusebenza kwedivayisi37,38,39,40.
Ukuze unqobe ukonakala kwedivayisi ngenxa yokufakelwa kwe-proton, ukufakwa kwezinga lokushisa okuphezulu kusetshenziselwa ukulungisa umonakalo, okufana nendlela yokudonsa evame ukusetshenziswa ngemva kokufakwa kwe-ion yokwamukela ekucutshungulweni kwedivayisi1, 40, 41, 42. Nakuba i-ion mass spectrometry (SIMS)43 kubika ukusabalalisa kwe-hydrogen ngenxa yokushisa okuphezulu, kungenzeka ukuthi ukuminyana kuphela kwama-athomu e-hydrogen eduze ne-FD akwanele ukuthola ukuphinwa kwe-PR kusetshenziswa i-SIMS. Ngakho-ke, kulolu cwaningo, sifake ama-protons kuma-4H-SiC epitaxial wafers ngaphambi kwenqubo yokwenziwa kwedivayisi, okuhlanganisa ukushisa okuphezulu kwe-annealing. Sisebenzise ama-PiN diode njengezakhiwo zedivayisi yokuhlola futhi sawenza kumawafa e-epitaxial e-proton afakwe yi-4H-SiC. Sibe sesibheka izici ze-volt-ampere ukuze sifunde ukonakala kokusebenza kwedivayisi ngenxa yomjovo we-proton. Ngokulandelayo, siye sabona ukunwetshwa kwe-1SSF ezithombeni ze-electroluminescence (EL) ngemva kokufaka i-voltage kagesi ku-PiN diode. Ekugcineni, siqinisekise umphumela womjovo we-proton ekucindezelweni kokunwetshwa kwe-1SSF.
Emkhiwaneni. Umfanekiso 1 ubonisa izici zamanje ze-voltage (CVCs) zama-PiN diode ezingeni lokushisa legumbi ezifundeni ezinokufakelwa kwe-proton nangaphandle kwayo ngaphambi kwe-pulsed current. Ama-PiN diode anomjovo we-proton abonisa izici zokulungisa ezifana nama-diode ngaphandle komjovo we-proton, nakuba izici ze-IV zabiwa phakathi kwama-diode. Ukukhombisa umehluko phakathi kwezimo zomjovo, sihlele imvamisa ye-voltage ekugqileni kwamanje okuya phambili okungu-2.5 A/cm2 (okuhambisana no-100 mA) njengesakhiwo sezibalo njengoba kuboniswe kuMfanekiso 2. Ijika elilinganiselwe ukusatshalaliswa okuvamile nalo limelelwe. ngomugqa onachashazi. umugqa. Njengoba kungabonwa eziqongweni zamajika, ukumelana nokumelana kukhuphuka kancane kumithamo ye-proton engu-1014 no-1016 cm-2, kuyilapho i-PiN diode enomthamo we-proton engu-1012 cm-2 ibonisa cishe izici ezifanayo njengalapho ngaphandle kokufakelwa kwe-proton. . Senze futhi ukufakwa kwe-proton ngemva kokwenziwa kwama-PiN diode angazange abonise i-electroluminescence efanayo ngenxa yomonakalo odalwe ukufakwa kwe-proton njengoba kuboniswe kuMfanekiso S1 njengoba kuchazwe ezifundweni ezedlule37,38,39. Ngakho-ke, ukudonsa ku-1600 °C ngemva kokufakwa kwe-Al ion kuyinqubo edingekayo ukuze kwenziwe amadivaysi ukuze kusebenze i-Al acceptor, engalungisa umonakalo odalwe ukufakwa kwe-proton, okwenza ama-CVC afane phakathi kwama-proton PiN diode afakwe kanye nalawo angafakwanga. . Imvamisa yamanje ehlehlayo ku -5 V nayo yethulwa kuMfanekiso S2, awukho umehluko obalulekile phakathi kwama-diode anomjovo weproton nangaphandle kwawo.
Izici ze-Volt-ampere zama-PiN diode anama-proton ajovwe nangenayo ekamelweni lokushisa. Inganekwane ibonisa umthamo wama-proton.
Imvamisa yamandla kagesi ku-2.5 A/cm2 yamanje yama-PiN diode anamaphrothoni ajovwe nangenawo. Ulayini onamachashazi uhambisana nokusabalalisa okuvamile.
Emkhiwaneni. I-3 ibonisa isithombe se-EL se-PiN diode esinokuminyana kwamanje okungu-25 A/cm2 ngemva kwe-voltage. Ngaphambi kokusebenzisa umthwalo wamanje we-pulsed, izifunda ezimnyama ze-diode azizange zibonwe, njengoba kuboniswe kuMfanekiso 3. C2. Nokho, njengoba kuboniswe fig. 3a, ku-PiN diode ngaphandle kokufakwa kwe-proton, izifunda ezimbalwa ezinemigqa emnyama ezinemiphetho yokukhanya zabonwa ngemva kokufaka i-voltage kagesi. Izifunda ezinjalo ezimnyama ezimise okwenduku zibonwa ezithombeni ze-EL ze-1SSF ezisuka ku-BPD ku-substrate28,29. Esikhundleni salokho, amanye amaphutha e-stacking anwetshiwe abonwa kuma-PiN diode anama-proton afakiwe, njengoba kuboniswe ku-Fig. 3b-d. Sisebenzisa i-X-ray topography, siqinisekise ukuba khona kwama-PRs angasuka ku-BPD aye endaweni engaphansi endaweni ezungezile yabathintana nabo ku-PiN diode ngaphandle komjovo we-proton (Fig. 4: lesi sithombe ngaphandle kokukhipha i-electrode ephezulu (isithombe, i-PR ngaphansi kwama-electrodes ayibonakali). Ngakho-ke, indawo emnyama esithombeni se-EL ihambisana ne-1SSF BPD enwetshiwe ku-substrate ye-PiN diode iboniswa ku-Figure 1 no-2. Amavidiyo we-S3-S6 anwetshiwe nangaphandle. izindawo ezimnyama (izithombe ze-EL ezishintsha isikhathi zama-PiN diode ngaphandle komjovo we-proton futhi zifakwe ku-1014 cm-2) nazo ziboniswa Ulwazi Olwengeziwe .
Izithombe ze-EL zama-PiN diode ku-25 A/cm2 ngemva kwamahora angu-2 engcindezi kagesi (a) ngaphandle kokufakwa kwe-proton kanye nemithamo efakiwe engu-(b) 1012 cm-2, (c) 1014 cm-2 kanye (d) 1016 cm-2 ama-proton.
Sibale ukuminyana kwe-1SSF enwetshiwe ngokubala izindawo ezimnyama ezinemiphetho ekhanyayo kuma-PiN diode amathathu esimweni ngasinye, njengoba kuboniswe kumfanekiso 5. Ukuminyana kwe-1SSF enwetshiwe kuncipha ngomthamo we-proton okhulayo, futhi ngisho nangomthamo ongu-1012 cm-2, ukuminyana kwe-1SSF enwetshiwe kuphansi kakhulu kune-PiN diode engafakwanga.
Ukuminyana okunyukile kwama-SF PiN diode afakwe nangaphandle kwe-proton ngemva kokulayisha nge-pulsed current (isifunda ngasinye sasihlanganisa ama-diode amathathu alayishiwe).
Ukunciphisa impilo yenkampani yenethiwekhi nakho kuthinta ukucindezelwa kokunwetshwa, futhi umjovo we-proton unciphisa impilo yenkampani yenethiwekhi32,36. Sibone ukuphila kwenkampani yenethiwekhi kusendlalelo se-epitaxial engu-60 µm obukhulu obunamaphrothoni ajovwe angu-1014 cm-2. Kusukela esikhathini sokuqala sempilo yenkampani yenethiwekhi, nakuba ukufakelwa kwehlisa inani libe ngu-~10%, ukudonsa okulandelayo kubuyisela ku-~50%, njengoba kuboniswe ku-Fig. S7. Ngakho-ke, impilo yenkampani yenethiwekhi, encishisiwe ngenxa yokufakelwa kwe-proton, ibuyiselwa ngokufakwa kwezinga lokushisa eliphezulu. Nakuba ukwehla ngo-50% kwempilo yenkampani yenethiwekhi kucindezela futhi ukusakazeka kwamaphutha ekustaki, izici ze-I–V, ngokuvamile ezincike empilweni yenkampani yenethiwekhi, zibonisa umehluko omncane kuphela phakathi kwama-diode ajovwe nangafakwanga. Ngakho-ke, sikholwa ukuthi i-PD anchoring idlala indima ekuvimbeleni ukunwetshwa kwe-1SSF.
Nakuba i-SIMS ingazange ibone i-hydrogen ngemva kokukhishwa kwe-anneal ku-1600 ° C, njengoba kubikiwe ezifundweni zangaphambilini, sabona umphumela wokufakelwa kwe-proton ekucindezelweni kokunwetshwa kwe-1SSF, njengoba kuboniswe kuMfanekiso 1 no-4. 3, 4. Ngakho-ke, sikholelwa ukuthi i-PD iqiniswe ama-athomu e-hydrogen anobuningi obungaphansi komkhawulo wokutholwa we-SIMS (2 × 1016 cm-3) noma amaphoyinti amaphutha adangwe ukufakwa. Kufanele kuqashelwe ukuthi asizange sikuqinisekise ukwenyuka kokumelana nombuso ngenxa yokwelulwa kwe-1SSF ngemuva komthwalo wamanje wokuhlinzwa. Lokhu kungase kube ngenxa yokuxhumana okungaphelele kwe-ohmic okwenziwe kusetshenziswa inqubo yethu, ezoqedwa maduze nje.
Sengiphetha, sithuthukise indlela yokucisha yokwelula i-BPD iye ku-1SSF kuma-diode angu-4H-SiC PiN sisebenzisa ukufakwa kwe-proton ngaphambi kokwenziwa kwedivayisi. Ukuwohloka kwesici se-I–V ngesikhathi sokufakwa kwe-proton akubalulekile, ikakhulukazi kumthamo we-proton ongu-1012 cm–2, kodwa umphumela wokucindezela ukunwetshwa kwe-1SSF ubalulekile. Nakuba kulolu cwaningo senze ama-PiN diode angu-10 µm awugqinsi ngokufakelwa kwe-proton ekujuleni okungu-10 µm, kusengenzeka ukuthi sithuthukise izimo zokufakelwa futhi sizisebenzise ukuze kwenziwe ezinye izinhlobo zamadivayisi e-4H-SiC. Izindleko ezengeziwe zokwenziwa kwedivayisi ngesikhathi sokufakwa kwe-proton kufanele zicatshangelwe, kodwa zizofana nalezo zokufakelwa kwe-aluminium ion, okuyinqubo eyinhloko yokwenziwa kwamadivayisi kagesi we-4H-SiC. Ngakho-ke, ukufakwa kwe-proton ngaphambi kokucutshungulwa kwedivayisi kuyindlela engaba khona yokwenza amadivayisi kagesi we-bipolar we-4H-SiC ngaphandle kokuwohloka.
I-wafer engu-4-inch n-type 4H-SiC enogqinsi lwe-epitaxial layer engu-10 µm kanye nokugxiliswa kwe-doping komnikeli okungu-1 × 1016 cm–3 kusetshenziswe njengesampula. Ngaphambi kokucubungula idivayisi, ama-H+ ions afakwa epuletini namandla okusheshisa angu-0.95 MeV ekamelweni lokushisa ukuya ekujuleni okungaba ngu-10 μm nge-engeli evamile endaweni yepuleti. Ngesikhathi sokufakelwa kwe-proton, kwasetshenziswa imaski epuletini, futhi ipuleti linezingxenye ezingenayo futhi ezinomthamo weproton ongu-1012, 1014, noma 1016 cm-2. Bese, ama-Al ions anemithamo ye-proton engu-1020 kanye no-1017 cm–3 afakwa phezu kwewafa yonke ekujuleni okungu-0–0.2 µm no-0.2–0.5 µm ukusuka phezulu, okulandelwa ukuhushulwa ku-1600°C ukuze kwakheke isivalo sekhabhoni ukuze yakha isendlalelo se-ap. -uhlobo. Kamuva, uhlangothi olungemuva oluthintwayo lwe-Ni lwafakwa ohlangothini lwe-substrate, kuyilapho ukuthintana kwe-Ti/Al okumise okwekamu okungaphambili okungu-2.0 mm × 2.0 mm okwakhiwe yi-photolithography kanye nenqubo yekhasi yafakwa ohlangothini lwe-epitaxial layer. Ekugcineni, ukufakwa kwe-contact annealing kwenziwa ezingeni lokushisa elingu-700 ° C. Ngemva kokusika isinkwa esilucwecwana sibe ama-chips, senza izici zokucindezeleka nokusebenzisa.
Izici ze-I–V ze-PiN diode ezenziwe zabonwa kusetshenziswa i-HP4155B semiconductor parameter analyzer. Njengokucindezeleka kagesi, i-10-millisecond pulsed current ye-212.5 A / cm2 yethulwa amahora angu-2 ngemvamisa ye-10 pulses / sec. Lapho sikhetha ukuminyana okuphansi kwamanje noma imvamisa, asizange sibone ukunwetshwa kwe-1SSF ngisho naku-PiN diode ngaphandle komjovo we-proton. Ngesikhathi se-voltage kagesi esetshenziswayo, izinga lokushisa le-PiN diode licishe libe ngu-70°C ngaphandle kokushisisa ngamabomu, njengoba kuboniswe kuMfanekiso S8. Izithombe ze-Electroluminescent zitholwe ngaphambi nangemuva kwengcindezi kagesi ekumineni kwamanje okungu-25 A/cm2. Isigameko sokudlisela esibukwayo se-synchrotron i-X-ray topography kusetshenziswa i-X-ray ye-monochromatic (λ = 0.15 nm) e-Aichi Synchrotron Radiation Center, i-ag vector ku-BL8S2 yi- -1-128 noma 11-28 (bona isif. 44 ukuze uthole imininingwane) . ).
I-voltage frequency ekugqileni kwamanje okuya phambili okungu-2.5 A/cm2 ikhishwa ngesikhawu esingu-0.5 V kufig. 2 ngokuya nge-CVC yesifunda ngasinye se-PiN diode. Kusuka enanini elimaphakathi le-Vave yengcindezi kanye nokuchezuka okujwayelekile okungu-σ kwengcindezi, sihlela ijika elivamile lokusabalalisa ngendlela yomugqa onamachashazi kuMfanekiso 2 sisebenzisa isibalo esilandelayo:
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Isikhathi sokuthumela: Nov-06-2022
