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I-4h-Sic ithengisiwe njengento ebonakalayo kwizixhobo zamandla ze-semiconductor. Nangona kunjalo, ukuthembeka kwexesha elide kwezi zixhobo ze-4h-SIC ngumqobo kwisicelo sabo ngokubanzi, kwaye eyona ngxaki ibalulekileyo yokuxhomekeka kwezixhobo ze-4h-SIC yi-BOPEAR. Oku khupha i-Depation kubangelwa sisiphoso esinye se-Shockay Apha, sicebisa indlela yokucinezela ukwandiswa kwe-1ssf yiprojeki ethintelayo kwi-4h-spitaxial epitaxial wafs. I-PIN DODS I-DODESS i-Pofers kwi-Proton ibonakalise iimpawu ezifanayo ze-voltage efana ne-proos ngaphandle kokufakwa kwe-proton. Ngokwahlukileyo, ukwandiswa kwe-1ssf kuyacinezelwa ngempumelelo kwiPiaton efakwe kwi-Diode. Ke ngoko, ukufakwa kweeprotokhoni kwi-4h-spitaxial epitaxial yindlela esebenzayo yokucinezelwa kwe-Bipolar kwizixhobo ze-4h-sund man semicondcuctor ngelixa ugcina ukusebenza kwendlela. Esi siphumo sinegalelo kuphuhliso lwezixhobo ezinokuthenjwa ze-4h-SIC.
I-Silicon Carbide (i-SIC) yamkelwe ngokubanzi njengezixhobo ze-semiconductor ezinamandla aphezulu, eziphakamileyo ze-semiconductor ezinokusebenza kwiindawo ezinobunzima1. Zininzi izinto ze-ic polytypes, phakathi kwe-4H-SIC ineempawu ezigqwesileyo ze-semicondcuctors ezifana nokuhamba kwe-elektroni ephezulu kunye nokuqhekeka kombane. I-4h-Sic i-wafter ene-diameter ye-intshi ezi-6 ngoku ithengiswa kwaye isetyenziselwa ukuveliswa kwesininzi kwezixhobo ze-semicondcuctor ze-semicondcuctor. Iinkqubo zokuThola Iimoto zombane kunye noololiwe bezinezixhobo zisebenzisa i-4h-Sic4.5 izixhobo ze-semicondcuctor. Nangona kunjalo, izixhobo ze-4h-SIC zisabandezeleka kwimiba ethembekileyo yokuxhomekeka efana nokuqhekeka kweDeectric okanye ukuthembeka kwesekethe, 6,7 yeyiphi yeyona micimbi ibaluleke kakhulu kwi-Bipolar2,1,11,11. Lo mhlahla wokuphefumla wafunyanwa ngaphezulu kweminyaka engama-20 eyadlulayo kwaye kudala iyingxaki kwisixhobo se-SIC.
Bipolar degradation is caused by a single Shockley stack defect (1SSF) in 4H-SiC crystals with basal plane dislocations (BPDs) propagating by recombination enhanced dislocation glide (REDG)12,13,14,15,16,17,18,19. Ke ngoko, ukuba ulwakhiwo lwe-BPD lucinezelwe kwi-1SSF, izixhobo ze-4h-SIC zinokupheliswa ngaphandle kokupheliswa kwebhugi. Iindlela ezininzi zichaziwe ukuba zicinezelwe ukusasazwa kwe-BPD, njenge-BPD ekufuduseni komda we-20,21,22,22,24. Kwi-spitatial ye-spitaial ye-spitalial ye-SIC, i-BPD ikakhulu ifumaneka kwi-substrate kwaye ayikho kwi-ritatial therment ngenxa yokuguqulwa kwe-BPD ukuba i-BPD ye-tedd ngexesha lokukhula kwe-epitamatial. Ke ngoko, ingxaki eseleyo yonakalisa i-bipolar kukusasazwa kwe-BPD kwi-25,26,27. Ukufakwa komaleko "wokuziqhelanisa nokuqinisa" phakathi komaleko we-drift kwaye icetywe i-subtate njengeyona ndlela isebenzayo yokurhoxisa i-chistal hol kunye ne-Suble Subrest kwi-Epitakude nakwi-SIC. Ukunciphisa inani lezibini zemingxunya ye-elektroni kunciphisa i-redg kwi-BPD kwi-BPD kwi-FRD kwi-Fiest, ngoko ke yomaleko woNyanzeliso unokuyinyanzela ukonakaliswa kwentloko. Kuya kufuneka kuqatshelwe ukuba ukufakelwa komaleko kubandakanya iindleko ezongezelelekileyo kwimveliso yezilwanyana, kwaye ngaphandle kokufakelwa komaleko kunzima ukunciphisa inani lezinto zobomi bomkhombe. Ke ngoko, kusekho isidingo esomeleleyo sokuphuhlisa ezinye iindlela zokucinezelwa ukufezekisa ibhalansi engcono phakathi kwendleko zendleko kunye nesivuno.
Kuba ulwandiso lwe-BPD ukuya kwi-1ssf lufuna intshukumo yenxalenye yokuNgeniswa kweNtlalontle (PDS), ukufaka i-PD yindlela ethembisayo yokuthintela ukonakaliswa kwengqondo. Nangona isiphithiphithi se-PD sixeliwe, i-FPDS kwi-4hds kwi-4h-SIC ibekwe kumgama ongaphezulu kwe-5 μm ukusuka kumphezulu wefomati ye-epitasial. Ukongeza, okoko ulungelelwaniso lwendlela yokuphambana kwalo naliphi na isinyithi e-SIC incinci kakhulu, kunzima ukungcola kwentsimbi ukuze kube nzima kakhulu. Ngenxa yobunzima be-atomic enkulu ye-atomic, i-ion yokufakwa kwezinyithi ikwanzima. Ngokwahlukileyo koko, kwimeko ye-hydrogen, into ekhanyayo, i-ion (iiprothok) zinokufakwa kwi-4h-SIC ukuya kwi-10 μm usebenzisa i-MEV yeklasi. Ke ngoko, ukuba i-proton yokufakwa ichaphazela i-PD ipin, ke inokusetyenziselwa ukucinezela ukusasazwa kwe-BPD kwi-subsest. Nangona kunjalo, indawo yokufakwa kwe-proton inokulimaza i-4h-SIC kwaye isiphumo sokuncitshiswa kwesixhobo
Ukoyisa ukonakaliswa kwesixhobo ngenxa yokufakwa kwe-proton, i-In-Heathare-Home yendlela yokufakwa kwe-ion ye-ion ye-ion ye-ion ye-ion ye-hydrogen i-AMOTO kufutshane ne-FDRENT iufuphi Ukufumana ukutshintshwa kwe-PR Sebenzisa i-SIMS. Ke ngoko, kolu phando, sifaka iiprojen kwi-4h-spita-spitatial ye-efitaial weffistation ngaphambi kwenkqubo yokwenziwa kwesixhobo, kubandakanya amaqondo obushushu aphezulu anokwazi. Sasebenzisa iPIN DODS njengezakhiwo zesixhobo zokuvavanya Emva koko sajonga iimpawu zeVolt-Ampere ukuba ukufundisisa intlawulo yokusebenza kwesixhobo ngenxa yenaliti ye-proton. Emva koko, sabona ukwanda kwe-1SCF kwiMifanekiso ye-Elerorouminecence (EL) emva kokufaka i-voltage yombane kwiPIN kwiPIN. Okokugqibela, siqinisekisile ifuthe le-proton kwinaliti ekucinezelweni kolwandiso lwe-1ssf.
Kwi-Fig. Umzobo 1 Ibonisa iimpawu zevolthi ye-voltage (CVCs) zePIN kwi-PIN kubushushu begumbi kwimimandla ehamba kwaye ngaphandle kokufakwa kwe-proton ngaphambi kokuba kutshwe okwangoku. I-PIN DODS ngenaliti ye-proton yenja ebonisa iimpawu ezifanayo kwinaliti ngaphandle kwenaliti ye-proton, nangona iimpawu ze-IV zabelwe phakathi kweeDoos. Ukubonisa umahluko phakathi kweemeko zentsholongwane, saceba i-voltage frequency kwisahlulo se-2,5 A / cm2 (ehambelana ne-100 ma) i-stores eboniswe ngumgca onamachaphaza. umgca. Njengoko kunokubonwa ukusuka kwiincopho zejikajika, ukuchasana nokonyuka kancinci kwiidon ze-proton ye-1014 ye-1016, ngelixa i-DM-2 cm-2, ngelixa i-DOM ye-PROT ye-Proton ye-Proton ye-Proton engafaniyo. Sikwenze nokufakwa kwe-proton emva kokufakwa kwe-PIN ye-PINT engakhange ibonakalise i-irton ye-ifomusulelo ngenxa yomonakalo obangelwe yi-S1 njengoko kuchaziwe kwizifundo zangaphambili37,39,39,39,39. Ke ngoko, ukungqubana kwi-1600 ° C emva kokufakwa kwe-al i-AL yinkqubo eyimfuneko yokufumana izixhobo zokuvula i-AL PROPS, enokulungisa umonakalo owenziwe yi-proton proods efanayo nengafakwanga i-proos ye-proos efanayo nengafakwanga. Ukutshintsha umva rhoqo kwi-AT -5 v kunikezelwa kwi-S2, akukho mahluko ubambi phakathi kwee-proos kunye nenaliti ye-proton.
Iimpawu ze-volt-Ampreere zePIN yePIN DODS kunye kwaye zingenakuthelekiswa neeprojensi zegumbi kubushushu begumbi. Intsomi ibonisa idosi yeeprotokhosi.
I-Voltage Read Requed kwi-2,5 A / CM2 ye-PIN ye-PIN ngeepropu ezineepropati ezingafunekiyo nezingafakwanga. Umgca onamachaphaza uhambelana nokusasazwa okuqhelekileyo.
Kwi-Fig. I-3 ibonisa umfanekiso we-El yePIN nge-diode ye-diode ye-25 A / CM2 emva kwevolthi. Ngaphambi kokuba isebenzise umthwalo odlayo ngoku, imimandla emnyama yeDiode yayingaqwalaselwanga, njengoko kubonisiwe kumzobo 3. C2. Nangona kunjalo, njengoko kubonisiwe kwi-Fig. I-3a, kwiPIN ye-diode ngaphandle kokufakwa kwe-proton, imimandla emininzi emide enemigca yokukhanya yaqwalaselwa emva kokufaka i-voltage yombane. Imimandla eminyama enjalo igcinwe kwimifanekiso ye-EL ye-1ss ye-1ssf kwi-BPD ye-substrate28,29. Endaweni yoko, ezinye iimpazamo ezandisiweyo zaqwalaselwa kwi-PIN DOODS ngeProjekthi yePhakathi, njengoko kubonisiwe kwi-fig. 3b-D. Sebenzisa i-x-ray topography, siqinisekisile ubukho be-PRS enokuhamba kwi-BPD kwi-Electrode yoMntu oPhezulu (umfanekiso we-ELL). I-EL eqingqiweyo ye-El Ii-Dodwes ziboniswe kwi-1 kunye ne-2. Iividiyo ze-S3-s6 kunye nezingaphandle kweendawo ezimnyama (okwenziwa lixesha le-EL-2) zikwaboniswa kwinaliti eyongezelelweyo.
I-EL E-EL E-EL yePIN DODS nge-25 A / CM2 emva kweeyure ezi-2 zoxinzelelo lombane (a) ngaphandle kokufakwa kwe-proton (b) i-1012 cm-2, (D) Iiprotokhosi ezi-1016 cm-2 ze-CM-2.
Sibala ukuxinana kwe-1ssf enyukayo ngokubalwa kweendawo ezimnyama nge-proos eqaqambileyo kwi-1,2 cm-2, ukuxinana kwe-1.
Ukunyuka kwee-pin ze-SF nge-DODS kunye nokungeniswa kwe-proton emva kokulayisha nge-Itswe ngoku
Ukunciphisa ixesha lokuphatha inkathalo lichaphazela uxinzelelo lokwandiswa, kwaye inaliti ye-proton inciphisa i-Deeer Deestiatime32,36. Sibonile i-8ieers yophando kwi-fetate ye-7 μm ubukhulu beeprojen ezimiselweyo ze-1014 cm-2. Ukusuka kwi-Parrier yeTeersimes yokuqala, nangona ifakitivent inciphisa ixabiso kwi ~ 10%, ibuyise i-Ineractorang elandelayo ibe yi ~ 50%, njengoko kubonisiwe kwi-Fig. S7. Ke ngoko, ixesha lokuphila elithwele, lincitshisiwe ngenxa yokufakwa kwe-proton, ibuyiselwa kukuthintelwa kobushushu obuphakathi. Nangona ukuncitshiswa kwe-50% ebomini kukwacinezela ukusasazeka kweempazamo, iimpawu ze-I-V, ezixhomekeka kubomi obuqhelekileyo, bonisa kuphela umahluko phakathi kweedosi ezincinci nezingafakwanga. Ke ngoko, siyakholelwa ukuba i-pd adhoring idlala indima yokuthintela ukwanda kwe-1ssf.
Nangona i-SIMMS engayifumani i-hydrogen emva kokuba ifumene i-1600 ° C, njengoko ichaziwe kwizifundo ezidlulileyo, siye sakholelwa ukuba i-PHDREND YOKUGQIBELA I-APMS EPRENT ENYE 1 NO-2. indawo yokubekwa. Kufuneka iqatshelwe ukuba asiqinisekisi ukwanda kokungaxhathisi kukarhulumente ngenxa ye-1ssf emva kotyando lwangoku. Oku kunokuba ngenxa yonxibelelwano olungafezekanga lwenziwe ukusebenzisa inkqubo yethu, eya kupheliswa kungekudala.
Ukuqukumbela, saqulunqa indlela yokuveza i-cindes yokwandisa i-BPD kwi-1SCSF kwi-4h-sic i-danti ye-proos esebenzisa i-proton yokufakwa kwe-proton ngaphambi kokufakwa kwezixhobo. Ukuwohloka kwe-I-v fickistic ngexesha lokufakwa kwe-proton engabalulekanga, ngakumbi kwidonki ye-proton ye-proton ye-1012, kodwa isiphumo sokucinezelwa ukwanda kwe-1ss. Nangona kolu phononongo siye sayifumana i-10 μm ye-proos ye-proton yokubekwa kubunzulu be-10 μm, kusenokwenzeka ukuba isebenze ngakumbi kwiintlobo zezixhobo ze-4h-SIC. Iindleko ezongezelelweyo zokufumana izixhobo ngexesha lokufakwa kwe-proton kufuneka kuthathelwe ingqalelo, kodwa ziyafana nezo ze-aluminium ion, eyinkqubo ye-4h-S-S-S-SIC-SIC yamandla e-4h-SIC yamandla e-4h-SIC. Yiyo loo nto, i-proton yokufakwa ngaphambi kokuqhutywa kwesixhobo yindlela enokubakho ye-4h-ye-SIC-SIC BIC Bic bipolar ngaphandle kwe-Denderation.
I-4-intshi ye-4-intshi ye-4h-i-SIC, i-SIC ye-FICTER YINQAKU YAMA-10 μm kunye nomxhasi oxineneyo kwi-1 × 1016 cm-3 isetyenziswe njengesampulu. Ngaphambi kokuyilungisa isixhobo, i-H + i-Ion yafakwa kwiplate enemigangatho ye-0.95 mev kubushushu begumbi kubunzulu be-10 μm kwi-angle eqhelekileyo kwiplate. Ngexesha lokumiswa kweprophu, imaski kwiplate yayisetyenzisiwe, kwaye iplate yayinamacandelo ngaphandle kwe-proton yedoni ye-1012, 1014, okanye i-1016 cm-2. Emva koko, i-AL-AL ion ene-proton doses ye-1020 kunye ne-1017 cm-3 ifakwe phezu kwayo yonke i-ofisi yonke ye-0-0.2-0.5 kwi-1600 ° ilandelwa yi-carbon cap ye-carbon yokwenza ungqingqwa. -Ttype. Emva koko, umfowunelwa-winde wangaphambili wafakwa kwicala lobungakanani, ngelixa i-2.0 mm × 2 × 2 ye-TI / ye-ANT yangaphambili ye-TI / ye-ANT yangaphambili yenziwa yiFoto-fit-fit kwicala le-phonet. Okokugqibela, ukunxibelelana nokuqhagamshelwa kwenziwa kwiqondo lobushushu lama-700 ° C.. Emva kokusika i-wafer kwi-chips, senze uphawu loxinzelelo kunye nesicelo.
Iimpawu ze-I-v ze-pine enamachaphaza aqwalaselwe kusetyenziswa i-HP4155b semiconductorthecreter. Njengoxinzelelo lombane, i-10-Millisecond itsaliwe okwangoku kwi-212.5 A / CM2 yaziswa iiyure ezi-2 kwi-pumpsing ye-10 / sec. Xa sikhetha isixa-mali esisezantsi okanye rhoqo, asikhange sibhinqe ukwandiswa kwe-1sff nakweyiphi iPIN ngaphandle kwenaliti ye-proton. Ngexesha lombane osetyenzisiweyo, iqondo lobushushu le-diode le-diode lijikeleze i-70 ° C ngaphandle kokufudumeza ngabom, njengoko kubonisiwe kwi-S8. Imifanekiso yeOshfaromiction ifunyenwe ngaphambi nasemva koxinzelelo lombane kwindawo yangoku ye-25 A / CM2. I-Synchrotron icingisings amadlelo e-X-ray topography usebenzisa i-monochromatic x-ray ray) kwiZiko leMithombo ye-AIIIIII ye-AIIIIICHROTROTRON kwi-AIIIICHROTROTROTRORTROTROTROTROTROTROTROTROTROTROTROTROTROTROTROTROTROTROTROTROTROTROTROTROTROTROTROTROTROTROTROTROTROTROTROTROTROTROTROTROTROTROTROTROTROTROTROTROTROTROTROTROTROTROTROTROTROTROTROTROTROTROTRON? ).
I-voltage frequency kwi-verprity yangoku ye-2,5 a / cm2 ikhutshiwe ngethuba le-0.5 v kwi-Fig. I-2 ngokwe-CVC yemeko nganye yePIN ye-diode. Ukusuka kwixabiso le-ITRIC loxinzelelo lwe-vave kunye nokuphambuka komgangatho
I-Werner, Mnu & Fahrner, uphononongo lwe-WR kwizixhobo, ii-microsensi zabahlali, iinkqubo kunye nezixhobo zeqondo lobushushu kunye nezixhobo ezinobungozi. I-Werner, Mnu & Fahrner, uphononongo lwe-WR kwizixhobo, ii-microsensi zabahlali, iinkqubo kunye nezixhobo zeqondo lobushushu kunye nezixhobo ezinobungozi.I-Werner, uMnu kunye ne-Wr ngamagqabantshintshi e-WR, i-microsensi yabasebenzi, iinkqubo kunye nezixhobo zokusebenza kubushushu obuphezulu kunye neendawo ezinobunzima. I-Werner, Mnu & Fihrner, Wr 对用于高温和恶劣环境应用的材料, 微传感器, 系统和设备的评论. I-Werner, Mnu & Fahrner, uphononongo lwezinto ezizixhobo, ii-microsens, iinkqubo kunye nezixhobo zeqondo lobushushu obuphezulu kunye nokusetyenziswa kwemeko yemo engqongqo.I-Werner, uMnu kunye ne-Wr ngamagqabantshintshi, ii-microsens, iinkqubo kunye nezixhobo ezinesicelo seqondo lobushushu eliphezulu kunye neemeko ezinzima.I-IEEE Trans. I-elektroniki yemisebenzi. 48, 249-257 (2001).
I-Kimoto, T. & Cooper, I-ACreud, I-JA SISISEKILE ZEZOBUGCISA BENKCAZO ZEZOBUGCISA ZO-Silicon Bide: Ukukhula, izixhobo, izixhobo kunye nezicelo kunye nezicelo kunye nezicelo kunye nezicelo. I-Kimoto, T. & Cooper, I-ACreud, I-JA SISISEKILE ZEZOBUGCISA BENKCAZO ZEZOBUGCISA ZO-Silicon Bide: Ukukhula, izixhobo, izixhobo kunye nezicelo kunye nezicelo kunye nezicelo kunye nezicelo.I-Kimoto, t. neraper, i-jassics yeTekhnoloji ye-Silicon Carbide yeTekhnoloji ye-Silicon Carbide: Ukukhula, iimpawu, izixhobo kunye nezicelo kunye nezicelo kunye nezicelo. I-Kimoto, t. & Cooper, JA 碳化硅技术基础碳化硅技术基础: 增长, 表征, 表征. Kimoto, T. & Cooper, Ja Carbon 化 Techbon Tetheraknoloji ye-carbon 化 Isiseko se-Silicon Tetheraknoloji yeTekhnoloji: Ukukhula, izixhobo kunye nevolumu yesicelo.I-Kimoto, t. kunye neCooper, J. Isiseko seTekhnoloji ye-Silicon Carbide yeTekhnoloji ye-Silicon Carbide: Ukukhula, iimpawu, izixhobo kunye nezicelo.252 (UWiley Singapore Pte Ltd, 2014).
I-Velidis, V. Intengiso enkulu ye-SIC: Imeko ephathekayo kunye nemiqobo ekufuneka yoyisiwe. Alma Mater. isayensi. Iforum 1062, 125-130 (2022).
I-Brauntton, J., iphulelo, v. I-Brauntton, J., iphulelo, v.I-Brountton, J., iphulelo, v I-Brountton, J., I-Shot, V., Tumpela, Rr & Sjisi, YK 用于牵引目的的汽车电力电子热封装技术的回顾. I-Brauntton, J., I-Shot, V., Tumpela, RR & Sjosi, YKI-Brountton, J., I-Shot, V., i-tummala, i-tumma, i-joshi, i-YK kunye ne-IKSE, YK Stuvie, i-YKS, itekhnoloji yokupakisha i-Itromotive Amandla e-AKROMOTION.U-Eletron. Iphakheji. uphawu. I-ASME 140, 1-11 (2018).
Sato, k., Kato, H. & Fukushima, T. Ukuphuhliswa kwenkqubo ye-SIC efakwe kwiNkqubo yokuHamba ye-Shinkonsen Shinkonsen ephezulu ye-Shinkonsen ephezulu. Sato, k., Kato, H. & Fukushima, T. Ukuphuhliswa kwenkqubo ye-SIC efakwe kwiNkqubo yokuHamba ye-Shinkonsen Shinkonsen ephezulu ye-Shinkonsen ephezulu.I-Sato K., Kato H. kunye neFushima T. Ukuphuculwa kwenkqubo esetyenzisiweyo ye-SIC ye-SIC yezizukulwane ezinesizukulwana esilandelayo shinkonken.I-Sato K., Kato H. kunye ne-Fushima T. Inkqubo yokuphuhliswa kwenkqubo yezicelo ze-SIC zoololiwe be-shinkonken. Isihlomelo I-IEJ J. IND. 9, 453-459 (2020).
USenaki, J., Hayashi, S., Y., Y. I-OKUMURA, H. Imiceli mngeni yokuqinisekisa izixhobo ze-SIC zamandla e-SIC: ukusuka kwimo ye-SIC ye-sec. USenaki, J., Hayashi, S., Y., Y. I-OKUMURA, H. Imiceli mngeni yokuqinisekisa izixhobo ze-SIC zamandla e-SIC: ukusuka kwimo ye-SIC ye-sec.USenaki, J., Hayashi, S., Y., Y. NOKUMZA, H. IINGXAKI ZOKUZIPHATHA KWEEMPAHLA NOKUFUNDA NGOKUFANELEKILEYO KWE-SIC. Senzoki, J., Hayashi, S., Y., Y. I-OKUMURA, H. ND SIC 功率器件的挑战: 从 sic 功率器件的挑战. USenaki, J., Hayashi, S., Yonezawa, Y. I-Okamura, H. Umceli mngeni wokufezekisa ukuthembeka okuphezulu kwizixhobo ze-SIC: ukusuka kwi-SIC 晶圆的电视和问题设计.USenaki J, Hayashi S, Yonezawa Y. NOKUMZAYO H. NOKUMEMEMEMEMGOYA KUPHELA IZIFUNDO ZOKHUSELEKILEYO KWI-SILiCON CARBIDE CARBIDE COAFERS.Kwi-2018 IEEE yeHlangethi yeHlabathi yeSymposing Physics (IRPS). .
I-KIM, D. & SUMS, W. Uphuculwe ngokungxama kwesekethe emfutshane ye-1.2KV 4h-SIC MosfET usebenzisa i-P-I-PREATENT YOLWAZI LOKUGQIBELA I-KIM, D. & SUMS, W. Uphuculwe ngokungxama kwesekethe emfutshane ye-1.2KV 4h-SIC MosfET usebenzisa i-P-I-PREATENT YOLWAZI LOKUGQIBELAUKim, D. kunye ne-Sung, V. Uphuculwe ukugonywa kwesekethe i-1.2 kv 4h-th-sic mosfET usebenzisa i-P-Usebenzise i-P-Usebenzise i-P-I-PHITEROL EYENZIWEYO. Kim, D. & Sung, W. 使用通过沟道注入实现的深 p 使用通过沟道注入实现的深 1.2KV 4h-Sic mosfet 的短路耐用性. Kim, D. & Sung, W. p 阱提高了 1.2KV 4h-Sic mosfetI-KIM, D. kunye ne-Sung, V. Uphuculwe ukunyamezelwa kwesekethe i-1.2 kv 4h-sic mosfets usebenzisa i-P-queld enzulu.IEEEE Izixhobo ze-elektroniki let. 42, 1822-1825 (2021).
Skowronski m. et al. Ukuhlaziywa kwentshukumo ephuculweyo yeSiphene kwi-Speed-factorid 4h-sic pn i-dumbents. U-J. Isicelo. i-physics. I-92, 46994704 (2002).
I-HI, S., uMieszkowski, P., uSkowronski, M. & Rowland, uClondSland, uguqulelo lwe-LB le-4hlicon capitaxy. I-HI, S., uMieszkowski, P., uSkowronski, M. & Rowland, uClondSland, uguqulelo lwe-LB le-4hlicon capitaxy.Ha S., UMeszkowski P., uSkowronski M. kunye neRowland L. kunye neRowland LB Inguquko yokufuduswa ngexesha le-4hlicon capitaxy epitaxy. Ha, S., uMieszkowski, P., uSkowronski, M. & Rowland, lb 4h 4h 碳化硅外延中的位错转换. Ha, S., uMieszkowski, P., uSkowronski, M. & Rowland, lb 4h Ha, S., UMeszkowski, P., uSkowronski, M. & RORTANDLA, LBInguqulelo yokufudusana 4h kwi-Silicon Carbide epitaxy.J. cystal. Ukukhula 244, 257-266 (2002).
I-SKOWROSKI, M. & HA, S. Ukonakaliswa kwe-hexagonal silicon-carbide I-SKOWROSKI, M. & HA, S. Ukonakaliswa kwe-hexagonal silicon-carbideI-Skowronski m. kunye ne-HA S. Ukonakaliswa kwezixhobo zeBexagonal bipolal ngokusekwe kwi-Silicon Carbide. I-SKOWROSKI, M. & HEA, S. 六方碳化硅基双极器件的降解. I-SKOWROSKI M. & HA S.I-Skowronski m. kunye ne-HA S. Ukonakaliswa kwezixhobo zeBexagonal bipolal ngokusekwe kwi-Silicon Carbide.U-J. Isicelo. I-physics 99, 011101 (2006).
I-Agarwal, A., Fatima, H., Haney, Haney, S. & Ryo, S.-. I-Agarwal, A., Fatima, H., Haney, Haney, S. & Ryo, S.-.I-Agarwal A., Fatima H., Heini S. kunye neRya S.-h. I-Agarwal, A., Fatima, H., Haney, Haney, S. & Ryo, S.-. I-Agarwal, A., Fatima, H., Haney, Haney, S. & Ryo, S.-.I-Agarwal A., Fatima H., Heini S. kunye neRya S.-h.Indlela entsha yokonakaliswa kwenkqubo ye-voltage ye-voltage ye-goofets. IEEEE Izixhobo ze-elektroniki let. 28, 587-589 (2007).
ICaldwell, JD, uStinga, i-AJONI, MG kunye ne-Glembock, OJ & HD kwi-Corm Anbunt Stack Hall kwi-4h-SIC. ICaldwell, JD, uStinga, i-AJONI, MG kunye ne-Glembock, OJ & HD kwi-Corm Anbunt Stack Hall kwi-4h-SIC.ICaldwell, JD, uStilbush, i-AJONI, MG, i-Glemboki, Oj, kunye neHobat, i-HD kwi-hobart, i-KD-i-SIC. Calwell, JD, uStinga, Re, Ancona, Mg, Glembocki, Oj & Hid 关于 4h-sic 中复合引起的层错运动的驱动力 4h-sic 中复合引起的层错运动的驱动力 4h-sic 中复合引起的层错运动的驱动力. ICaldwell, JD, uStinga, Re, iAncona, Mg, Glembocki, OJ & HDICaldwell, JD, uStilbush, i-AJONI, MG, i-Glemboki, e-Oj, kunye neHobat, kwi-HD, kwi-HD, kwi-HD-SIC.U-J. Isicelo. i-physics. I-108, 044503 (2010).
IIJA, A. & kimoto, i-Kimoto, i-T. Imodeli yamaNqaku AFT ye-Shockey ye-Shockey eyodwa yokutsala i-4h-shristals. IIJA, A. & kimoto, i-Kimoto, i-T. Imodeli yamaNqaku AFT ye-Shockey ye-Shockey eyodwa yokutsala i-4h-shristals.IIJA, A. neKimoto, T. Imodeli ye-Electroni ye-Electronition yeSiphene esinye se-Shockey ukupakisha kwi-4h-skristals. IIJA, A. & kimoto, t. 4h-sic 晶体中单 shockey 堆垛层错形成的电子能量模型. IIJA, A. & kimoto, i-kimoto, t. imodeli ye-elektroniki ye-Shoctley StarkIIJA, A. kunye KIMOTO, T. Imodeli yamandla e-Electroni yokupakisha isiphene se-Shocking kwi-4h-sh-scristals.U-J. Isicelo. I-physics 126, 105703 (2019).
IIJA, A. & kimoto, t. uqikelelo lwemeko engqongqo yokwandiswa / ukwahlukana kwe-Shoctley ye-Shockay enye ye-Shockey kwi-4h-sic i-hipp iphi i-4h-sic pini. IIJA, A. & kimoto, t. uqikelelo lwemeko engqongqo yokwandiswa / ukwahlukana kwe-Shoctley ye-Shockay enye ye-Shockey kwi-4h-sic i-hipp iphi i-4h-sic pini.IIJA, A. neKimoto, T. Uqikelelo lwemeko ebaluleke kakhulu yokwanda / ukunyanzelwa kwesiphene se-shockey enye kwi-Shockay Sepan kwi-4h-spys. IIJA, A. & kimoto, t. 估计 4h-sic pin 二极管中单个 二极管中单个 二极管中单个 / 收缩的临界条件. IIJA, A. & kimoto, t. uqikelelo lwe-Shockey eyodwa yokuHambaIIJA, A. neKimoto, T. Uqikelelo lweemeko ezibalulekileyo zokwanda / ukunyanzeliswa kwesantya esinengxaki ye-STE-SHIC kwiPIN.Isicelo se-phriky firt. 116, 092105 (2020).
UMannen, Y., shimada, k., Asada, K.> Imodeli yentshukumo yentshukumo ye-Shockey ye-Shockey ye-STE-SIP phantsi kweemeko ezingalinganiyo. UMannen, Y., shimada, k., Asada, K.> Imodeli yentshukumo yentshukumo ye-Shockey ye-Shockey ye-STE-SIP phantsi kweemeko ezingalinganiyo.UMannen Y., shimada K., Asada K., kunye nemodeli ye-Otani N. Imodeli ye-STE-TOUM YOKUGQIBELA YOKUGQIBELA I-STEST YOKUGQIBELA I-STESTAL KWI-STESTE YENDLELA YOKUGQIBELA I-STERTE YAMABALI.UMannen Y., shimada K., Asada K. kunye ne-Otani N. Imodeli ye-Otani N. U-J. Isicelo. i-physics. I-125, 085705 (2019).
IGalekgas, A., I-Linnros, J. & Pirouz, P. Revo.cund-I-Aute-I-Aute-I-Aute-Inverance-Inverance Spiking Stoct: IGalekgas, A., I-Linnros, J. & Pirouz, P. Revo.cund-I-Aute-I-Aute-I-Aute-Inverance-Inverance Spiking Stoct:IGaleksas, A., I-Linnros, i-Linnros, J. nePirouz, i-P.-Piombaz, i-P. IGalekgas, A., I-Linnros, J. & Pirouz, P. 复合诱导的堆垛层错: 六方 Sic 中一般机制的证据. IGaleksas, A., I-Linnros, J. & Pirouz, iP.IGaleksas, A., I-Linnros, i-Linnros, J. nePirouz, i-P.-Piombaz, i-P.Umfundisi weFiziksi Wright. 96, 025502 (2006).
I-Ishikawa, Y., Sudo, M., Yao, Y.-z. & Katowari, Y. Ukwanda kwe-Shockale Stack kwi-Entitan Maam.Ishikawa, Y., M. Sudo, Y.-Z.-I-L.Ishikawa, Y., Sudo M., Y. psychology.Ibhokisi, ю. Судо, y.-z chem., J. Chem., 123, 225101 (2018).
Kato, m., uKatahira, S., ichikawa, Y., Harada, S. & kimoda, t. Ukujongwa kwe-Shoctor Stlating kwi-4h-SIC. Kato, m., uKatahira, S., ichikawa, Y., Harada, S. & kimoda, t. Ukujongwa kwe-Shoctor Stlating kwi-4h-SIC.Kato M., KATAHIRA S. Kato, M., Kathira, S., Ichikawa, Y., Harada, Harada, S. & kimoda, kimoda, t. 单 shockey 堆垛层错和 4h-sic 部分位错中载流子复合的观察. Kato, M., uKatahira, S., Ichikawa, Y., Harada, Harada, S. & kimoda, T. 单 Shockley StarkKato M., KATAHIRA S.U-J. Isicelo. I-physics 124, 095702 (2018).
Kimoto, t. & Wandanabe, H. Ubunjineli obugcweleyo kwitekhnoloji ye-SIC kwizixhobo zamandla kwi-voltage. Kimoto, t. & Wandanabe, H. Ubunjineli obugcweleyo kwitekhnoloji ye-SIC kwizixhobo zamandla kwi-voltage.I-Kimoto, t. kunye ne-watsanabee, h. Ukuphuhliswa kweziphene kwitekhnoloji ye-SIC kwizixhobo zamandla kwi-voltage. Kimoto, t. & watsanabe, h. 用于高压功率器件的 sic 技术中的缺陷工程. Kimoto, t. & Wandanabe, H. Ubunjineli obugcweleyo kwitekhnoloji ye-SIC kwizixhobo zamandla kwi-voltage.I-Kimoto, t. kunye ne-watsanabee, h. Ukuphuhliswa kweziphene kwitekhnoloji ye-SIC kwizixhobo zamandla kwi-voltage.Isicelo seFiziksi 13, 120101 (2020).
Zhang, z. & sudarshan, i-st disload dislodas-free epitaxy ye-silicon carbide. Zhang, z. & sudarshan, i-st disload dislodas-free epitaxy ye-silicon carbide.I-Zhang z. kunye neSudathan Ts i-streads Zhang, z. & sudarshan, ts 碳化硅基面无位错外延. Zhang, z. & sudarshan, tsI-Zhang z. kunye neSudarshan Ts I-Spitaxy ye-sitaicy ye-silicon carbide.ingxelo. i-physics. Wright. 87, 151913 (2005).
Zhang, Z., Moulton, E. & Sudarshan, TS Mechanism of eliminating basal plane dislocations in SiC thin films by epitaxy on an etched substrate. Zhang, Z., Moulton, E. & Sudarshan, TS Mechanism of eliminating basal plane dislocations in SiC thin films by epitaxy on an etched substrate.Zhang Z., Moulton E. and Sudarshan TS Mechanism of elimination of base plane dislocations in SiC thin films by epitaxy on an etched substrate. Zhang, z., moulton, e. & sudarshan, ts 通过在蚀刻衬底上外延消除 sic 薄膜中基面位错的机制. Zhang, z., moulton, e. & sudarshan, i-sudan, i-ts Icomism yokupheliswa kwefilimu ye-SIC ngokukhohlisa umhlaba.Zhang Z., Moulton E. kunye ne-Sudathan TS I-Spimination yokuNikeza kwiiFenkile zeNdiza kwiifilimu ezincinci ze-SIC nge-epitaxy kwi-epitaxy kwi-epitaxy kwi-epitaxy kwi-epitaxy kwi-epitaxy kwi-epitaxy kwi-epitaxy kwi-epitaxy kwi-epitaxy kwi-epitaxy kwi-epitaxy kwi-Ecemates.Isicelo se-phriky firt. 89, 081910 (2006).
I-Shtalbush i-et al. Ukuphazamiseka kokukhula kukhokelela ekuncipheni kwe-Basal Direlocials ngexesha le-4h-Sic Epitaxy. ingxelo. i-physics. Wright. 94, 041916 (2009).
Zhang, X. & Tsuchida, H. Ukuguqulwa kwe-Bassion ye-Basal Dislocations yokufundela i-Storications kwi-4h-speilayers ngeqondo lobushushu eliphezulu. Zhang, X. & Tsuchida, H. Ukuguqulwa kwe-Bassion ye-Basal Dislocations yokufundela i-Storications kwi-4h-speilayers ngeqondo lobushushu eliphezulu.Zhang, X. neTsuchida, H. Inguqu ye-Assal Direlocations kwi-Storication Relocations kwi-4h-SIC-SIC EFICE FITERS ngeqondo lobushushu obuphezulu. Zhang, X. & Tsuchida, H. 通过高温退火将 4h-sic 外延层中的基面位错转化为螺纹刃位错. Zhang, X. & Tsuchida, H. 通过高温退火将 4h-sicZhang, X. neTsuchida, i-TTACIDA, H. Inguqu ye-InAction Sport kwi-Filament Relocations kwi-4h-SIC-SIC EFICEAXAXA YOKUGQIBELA IXESHA LOKUGQIBELA.U-J. Isicelo. i-physics. 111, 123512 (2012).
Ingoma, H. & Sudathan, ukuguqulwa kwe-SUSS SIVALS kufuphi ne-ePilayer / i-Axpression kwi-ePitayer ekukhuleni kwe-4 ° i-Axis 4h-sic. Ingoma, H. & Sudathan, ukuguqulwa kwe-SUSS SIVALS kufuphi ne-ePilayer / i-Axpression kwi-ePitayer ekukhuleni kwe-4 ° i-Axis 4h-sic.Ingoma, H. kunye neSudathan, Inguqu ye-TS I-Assal Disocations kufutshane ne-Epitaxial Facer / i-Speciest Apperstres ngexesha lokukhula kwe-4h-sic. Ingoma, H. & Sudathan, ts 在 4 在 4h-sic 外延生长中外延层 / 衬底界面附近的基底平面位错转换. Ingoma, H. & Sudarshan, Ts 在 4 在 4h-sic Ingoma, h. & sudarshan, tsIngcaciso ye-Cortar yokukhuthaza indawo ekufutshane ne-epitamativer / umda wobubanzi ngexesha lokukhula kwe-pitatial ye-4h-sic ngaphandle kwe-4 ° Axis ye-4 ° Axis.J. cystal. Ukukhula 371, 94-101 (2013).
Konishi, K. Et Al. Ngaphezulu okwangoku, ukusasazwa kwendlela yokufuduswa kweplanethi ye-Bassal kwimpazamo kwi-4h-spitaxial Epitaxial Faines iguqukele kwi-Filament Relocations. U-J. Isicelo. i-physics. 114, 014504 (2013).
Konishi, K. Et Al. Yila imilambo ye-pitafalial ye-bipolar engakhathaliyo i-motorfuets ngokuchongela indawo eyandisiweyo yeNkulumbuso yeNkulumbuso ye-X-ray topopograph. I-AIP APS sele liphumelele i-12, 035310 (2022).
Lin, s. et al. Impembelelo ye-Bassul ye-Bassal dissus Japhan. U-J. Isicelo. i-physics. I-57, 04FR07 (2018).
I-Tahara, t., et al. I-Derierd Liveries eTshatithekayo eMfutshane kwi-nitrogen-enobutyebi bee-4h-echubantu isetyenziselwa ukucinezela iimpazamo ezijongene nePIN DIODS. U-J. Isicelo. i-physics. I-120, 115101 (2016).
I-Tahara, t. et al. I-Watket ye-Carrier Carriers Ukuxhomekeka kwe-Shockey enye ye-Shockey entshukumo kwi-4h-shic-pini ye-SIC yePIN. U-J. Isicelo. I-physics 123, 025707 (2018).
Mae, S., Tawara, T., Tsuchida, H. & Kato, M. Inkqubo ye-FCIT ye-FARINGS e-SIC. Mae, S., Tawara, T., Tsuchida, H. & Kato, M. Inkqubo ye-FCIT ye-FARINGS e-SIC.I-Mei, S., Tawara, T., Tsuchida, H. kunye neKato, M. FCA MicroSCopic Systemied Symories Adges kwi-Silicon Carbide. Mae, S., Tawara, T., Tsuchida, H. & Kato, M. 用于 Sic 中深度分辨载流子寿命测量的显微 fca 系统 fca 系统 fca 系统 fca 系统 fca 系统 fca 系统 fca 系统 fca 系统 fca 系统 fca 系统 fca 系统 fca 系统. Mae, S., Tawara, T., Tsuchida, H. & Kato, M. we-SIC Medium-in 分辨载流子 Inkqubo yobomi.I-Mei S., Tawara T., Tsuchida H. kunye neKato M.IForum yeSayensi ye-Alma Mater 924, 269-272 (2018).
Hirama, t. et al. Ukusasazwa kobunzulu bokuphila kwabaphetheyo kwi-4h-i-spitalial ye-spitalial ye-4h-i-SIC ye-non-neyona nto ibaluleke kakhulu esebenzisa isisombululo sexesha lokuthambisa okukhululekileyo kunye nokukhanya okunqabileyo. Tshintshela kwisayensi. imitha. 91, 123902 (2020).
IXESHA LOKUQALA: UNv-06-2022
