Enkosi ngokundwendwela i-Nature.com. Inguqulelo yesikhangeli oyisebenzisayo inenkxaso enyiniweyo yeCSS. Ngowona mava angcono, sicebisa ukuba usebenzise isikhangeli esihlaziyiweyo (okanye uvale iModi yokuThelela kwi-Internet Explorer). Okwangoku, ukuqinisekisa inkxaso eqhubekayo, siya kunika isayithi ngaphandle kwezitayela kunye neJavaScript.
I-4H-SiC iye yathengiswa njengesixhobo sezixhobo ze-semiconductor zamandla. Nangona kunjalo, ukuthembeka kwexesha elide lezixhobo ze-4H-SiC ngumqobo kwisicelo sabo esibanzi, kwaye eyona ngxaki ibaluleke kakhulu yokuthembeka kwezixhobo ze-4H-SiC kukuchithwa kwe-bipolar. Oku kuthotywa kubangelwa yimpazamo enye ye-Shockley stacking (1SSF) yokusasazwa kwe-basal plane dislocations in 4H-SiC crystals. Apha, sicebisa indlela yokucinezela ukwanda kwe-1SSF ngokufaka iiprotons kwi-4H-SiC epitaxial wafers. I-PiN diode eyenziwe kwii-wafers kunye nokufakelwa kweproton ibonise iimpawu ezifanayo zangoku ze-voltage njenge-diode ngaphandle kokufakelwa kweproton. Ngokwahlukileyo koko, ukwandiswa kwe-1SSF kucinezelwa ngokufanelekileyo kwi-proton-implanted PiN diode. Ke, ukufakelwa kweeprotons kwi-4H-SiC epitaxial wafers yindlela esebenzayo yokucinezela ukuthotywa kwe-bipolar ye-4H-SiC yezixhobo ze-semiconductor yamandla ngelixa ugcina ukusebenza kwesixhobo. Esi siphumo sinegalelo ekuphuhlisweni kwezixhobo ezithembekileyo ze-4H-SiC.
I-Silicon carbide (i-SiC) ibonwa ngokubanzi njengesixhobo se-semiconductor kumandla aphezulu, izixhobo ze-semiconductor eziphezulu ezinokusebenza kwiindawo ezinzima1. Kukho iipolytypes ezininzi ze-SiC, phakathi kwazo i-4H-SiC inezixhobo ezibalaseleyo ze-semiconductor yezixhobo zomzimba ezifana nokuhamba kwe-electron ephezulu kunye nokuphazamiseka okunamandla kwintsimi yombane2. Ii-wafers ze-4H-SiC ezinobubanzi obuyi-intshi ezi-6 zithengiswa ngoku kwaye zisetyenziselwa ukuveliswa kobuninzi bezixhobo ze-semiconductor zamandla3. Iinkqubo zokutsalwa kwezithuthi zombane kunye nezitimela zenziwe ngezixhobo ze-4H-SiC4.5 ze-semiconductor yamandla. Nangona kunjalo, izixhobo ze-4H-SiC zisabandezeleka kwimiba yokuthembeka kwexesha elide elifana nokuchithwa kwe-dielectric okanye ukuthembeka kwe-short-circuit, i-6,7 enye yezona zinto zibalulekileyo ezithembekileyo yi-bipolar degradation2,8,9,10,11. Oku kuthotywa kwe-bipolar kwafunyanwa kwiminyaka engama-20 eyadlulayo kwaye kudala kuyingxaki kukwenziwa kwesixhobo se-SiC.
Ukuchithwa kwe-bipolar kubangelwa yi-Shockley stack defect eyodwa (1SSF) kwi-crystals ye-4H-SiC ene-basal plane dislocations (BPDs) esasaza ngokudibanisa i-dislocation glide ephuculweyo (REDG) 12,13,14,15,16,17,18,19. Ke ngoko, ukuba ukwandiswa kwe-BPD kucinezelwe kwi-1SSF, izixhobo zamandla ze-4H-SiC zinokwenziwa ngaphandle kokuthotywa kwe-bipolar. Iindlela ezininzi ziye zaxelwa ukucinezela ukusasazwa kwe-BPD, njenge-BPD kwi-Thread Edge Dislocation (TED) inguqu ye-20,21,22,23,24. Kwii-wafers ze-SiC ze-epitaxial zamva nje, i-BPD ifumaneka kakhulu kwi-substrate kwaye ingekho kwi-epitaxial layer ngenxa yokuguqulwa kwe-BPD kwi-TED ngexesha lokuqala lokukhula kwe-epitaxial. Ngoko ke, ingxaki eseleyo yokuchithwa kwe-bipolar kukusasazwa kwe-BPD kwi-substrate ye-25,26,27. Ukufakwa kwe "i-composite yokuqinisa umaleko" phakathi kwe-drift layer kunye ne-substrate iye yacetywa njengendlela esebenzayo yokucinezela ukwanda kwe-BPD kwi-substrate28, 29, 30, 31. i-epitaxial layer kunye ne-SiC substrate. Ukunciphisa inani lezibini ze-electron-hole kunciphisa amandla okuqhuba i-REDG ukuya kwi-BPD kwi-substrate, ngoko ke umaleko wokuqinisa odibeneyo unokucinezela ukuthotywa kwe-bipolar. Kufuneka kuqatshelwe ukuba ukufakela umaleko kubandakanya iindleko ezongezelelweyo ekuvelisweni kwee-wafers, kwaye ngaphandle kokufaka umaleko kunzima ukunciphisa inani le-electron-hole pairs ngokulawula kuphela ukulawulwa kwexesha lokuphila komthuthi. Ke ngoko, kusekho imfuneko eyomeleleyo yokuphuhlisa ezinye iindlela zokucinezela ukufikelela kwibhalansi engcono phakathi kweendleko zokwenziwa kwesixhobo kunye nesivuno.
Ngenxa yokuba ukwandiswa kwe-BPD kwi-1SSF kufuna ukunyakaza kwe-partial dislocations (PDs), ukukhonkxa i-PD yindlela ethembisayo yokuthintela ukuthotywa kwe-bipolar. Nangona i-PD i-pinning ngokungcola kwesinyithi iye yabikwa, ii-FPD kwii-substrates ze-4H-SiC zifumaneka kumgama ongaphezu kwe-5 μm ukusuka kumphezulu we-epitaxial layer. Ukongezelela, ekubeni i-coefficient yokusasazwa kwayo nayiphi na isinyithi kwi-SiC incinci kakhulu, kunzima ukuba ukungcola kwesinyithi kusasazeke kwi-substrate34. Ngenxa yobuninzi beathom yesinyithi, ukufakwa kwe-ion yesinyithi nako kunzima. Ngokuchaseneyo, kwimeko ye-hydrogen, eyona element ikhaphukhaphu, i-ion (iprotons) inokufakwa kwi-4H-SiC kubunzulu obungaphezulu kwe-10 µm kusetyenziswa i-accelerator ye-MeV-class. Ke ngoko, ukuba ukufakelwa kweproton kuchaphazela i-PD pinning, ke inokusetyenziselwa ukucinezela ukusasazwa kwe-BPD kwi-substrate. Nangona kunjalo, ukufakelwa kweproton kunokonakalisa i-4H-SiC kwaye kubangele ukusebenza kwesixhobo esincitshisiweyo37,38,39,40.
Ukoyisa ukuthotywa kwesixhobo ngenxa yokufakelwa kweproton, i-annealing yobushushu obuphezulu isetyenziselwa ukulungisa umonakalo, ngokufana nohlobo lwe-annealing olusetyenziswa ngokuqhelekileyo emva kokufakwa kwe-ion yokwamkela kwiprosesa yesixhobo1, 40, 41, 42. Nangona i-ion mass spectrometry (SIMS)43 inesibini. kuxelwe ukusasazwa kwe-hydrogen ngenxa yobushushu obuphezulu, kunokwenzeka ukuba kuphela ukuxinana kweeathom ze-hydrogen kufutshane ne-FD akwanelanga ukufumanisa i-pinning ye-PR usebenzisa i-SIMS. Ke ngoko, kolu phononongo, sifake iiprotons kwi-4H-SiC epitaxial wafers phambi kwenkqubo yokwenziwa kwesixhobo, kubandakanya ubushushu obuphezulu be-annealing. Sisebenzise ii-PiN diode njengezixhobo zovavanyo kwaye sazenza kwiiproton ezifakwe kwi-4H-SiC epitaxial wafers. Emva koko siye saqwalasela iimpawu ze-volt-ampere ukufunda ukuthotywa kokusebenza kwesixhobo ngenxa yokutofa kweproton. Emva koko, siye sabona ukwanda kwe-1SSF kwimifanekiso ye-electroluminescence (EL) emva kokufaka umbane wombane kwi-PiN diode. Ekugqibeleni, siye saqinisekisa umphumo wenaliti yeproton ekunyanzelweni kokwandiswa kwe-1SSF.
Kwikhiwane. Umzobo 1 ubonisa iimpawu ze-voltage zangoku (i-CVCs) ze-PiN diode kwindawo yobushushu begumbi kwimimandla kunye nangaphandle kokufakelwa kwe-proton ngaphambi kwe-pulsed yangoku. Iidiode zePiN ezinenaliti yeproton zibonisa iimpawu zokulungisa ezifana neediode ngaphandle kwesitofu seproton, nangona iimpawu ze-IV zabelwana ngazo phakathi kweediode. Ukubonisa umahluko phakathi kweemeko zokujova, siceba i-voltage frequency kwi-concentration yangoku ye-2.5 A / cm2 (ehambelana ne-100 mA) njengeplani yezibalo njengoko kubonisiwe kuMfanekiso 2. Ijika eliqikelelwa ngokusasazwa okuqhelekileyo nalo limelelwe. ngomgca onamachaphaza. umgca. Njengoko kunokubonwa kwiincopho zeegophe, ukuxhathisa kunyuka kancinci kwidosi yeproton ye-1014 kunye ne-1016 cm-2, ngelixa i-PiN diode enedosi yeproton ye-1012 cm-2 ibonisa phantse iimpawu ezifanayo ngaphandle kokufakelwa kweproton. . Senze kwakhona ukufakelwa kweproton emva kokwenziwa kwePiN diode engazange ibonise i-electroluminescence efanayo ngenxa yomonakalo owenziwe kukufakelwa kweproton njengoko kubonisiwe kuMfanekiso S1 njengoko kuchaziwe kwizifundo zangaphambili37,38,39. Ngoko ke, ukuhlanjululwa kwi-1600 ° C emva kokufakelwa kwe-Al ion yinkqubo efunekayo yokwenza izixhobo ukuze kusebenze i-Al acceptor, enokuthi ilungise umonakalo obangelwa kukufakelwa kweproton, eyenza i-CVCs ifane phakathi kwe-proton PiN diodes efakwe kunye ne-non-implantation. . I-reverse yangoku i-frequency kwi -5 V nayo ibonakaliswe kuMfanekiso we-S2, akukho mahluko ubalulekileyo phakathi kwe-diode kunye nangaphandle kwe-injection yeproton.
Iimpawu zeVolt-ampere zePiN diode kunye nangaphandle kweeprotons ezitofelweyo kwiqondo lokushisa. Ibali libonisa umthamo weeprotons.
I-voltage frequency kwi-2.5 A / cm2 yangoku ngokuthe ngqo kwi-PiN diode kunye neeproton ezitofwayo kunye nezingafakwanga. Umgca wamachaphaza uhambelana nonikezelo oluqhelekileyo.
Kwikhiwane. I-3 ibonisa umfanekiso we-EL we-PiN diode kunye noxinano lwangoku lwe-25 A / cm2 emva kombane. Ngaphambi kokusebenzisa umthwalo wangoku we-pulsed, imimandla emnyama ye-diode ayizange ibonwe, njengoko kuboniswe kuMfanekiso 3. C2. Nangona kunjalo, njengoko kubonisiwe kwifig. I-3a, kwi-PiN diode ngaphandle kokufakelwa kweproton, imimandla emininzi enemigca emnyama enemiphetho yokukhanya yabonwa emva kokufaka i-voltage yombane. Imimandla emnyama efana nentonga ibonwa kwimifanekiso ye-EL ye-1SSF isuka kwi-BPD kwi-substrate28,29. Endaweni yoko, ezinye iimpazamo ezandisiweyo zokupakisha zabonwa kwii-PiN diode ezineproton ezifakelwe, njengoko kubonisiwe kumfanekiso 3b-d. Ukusebenzisa i-X-ray topography, siqinisekisile ubukho be-PRs ezinokusuka kwi-BPD ukuya kwi-substrate kwi-periphery yabafowunelwa kwi-PiN diode ngaphandle kwe-proton injection (umzobo 4: lo mfanekiso ngaphandle kokususa i-electrode ephezulu (ifoto, i-PR phantsi kwe-electrodes ayibonakali). Ngoko ke, indawo emnyama emfanekisweni we-EL ihambelana ne-1SSF BPD eyandisiweyo kwi-substrate ye-EL yeminye i-PiN diode iboniswa kwiMifanekiso 1 kunye ne-2. Iividiyo ze-S3-S6 kunye nangaphandle kwandiswa. iindawo ezimnyama (ixesha elitshintshayo imifanekiso ye-EL ye-PiN diode ngaphandle kwe-injection yeproton kwaye ifakwe kwi-1014 cm-2) nayo iboniswe kwiiNkcukacha ezongezelelweyo.
Imifanekiso ye-EL ye-PiN diodes kwi-25 A / cm2 emva kweeyure ze-2 zoxinzelelo lombane (a) ngaphandle kokufakelwa kweproton kunye needosi ezifakelweyo (b) 1012 cm-2, (c) 1014 cm-2 kunye (d) 1016 cm-2 iiprotoni .
Sibale ubuninzi be-1SSF eyandisiweyo ngokubala iindawo ezimnyama ezinemiphetho ekhanyayo kwii-PiN diode ezintathu kwimeko nganye, njengoko kuboniswe kuMzobo 5. Ubuninzi be-1SSF eyandisiweyo buyancipha ngokunyuka kwe-proton dose, kwaye nakwi-dose ye-1012 cm-2, Uxinaniso lwe-1SSF eyandisiweyo lusezantsi kakhulu kune-PiN diode engamiliselwanga.
Ukuxinana okunyukileyo kwe-SF PiN diode kunye nangaphandle kokufakelwa kweproton emva kokulayishwa nge-pulsed current (ilizwe ngalinye libandakanya iidiode ezintathu ezilayishiwe).
Ukunciphisa ubomi bomthwali nako kuchaphazela ukunyanzeliswa kokwandiswa, kunye nenaliti yeproton inciphisa ubomi bomntu ophethe32,36. Siye saqwalasela ubomi bomntu ophetheyo kumaleko we-epitaxial angama-60 µm ubukhulu kunye neeprotoni ezitofwayo ze-1014 cm-2. Ukususela kubomi bomthwali bokuqala, nangona ukufakelwa kunciphisa ixabiso kwi- ~ 10%, i-annealing elandelayo ibuyisela kwi ~ 50%, njengoko kuboniswe kwi-Fig. Ke ngoko, ubomi bomthwali, buncitshiswe ngenxa yokufakelwa kweproton, bubuyiselwa ngokufakwa kobushushu obuphezulu. Nangona ukuncipha kwe-50% kubomi bomthwali nako kucinezela ukusasazwa kweempazamo zokupakisha, iimpawu ze-I-V, ezihlala zixhomekeke kubomi bomthwali, zibonisa kuphela umahluko omncinci phakathi kweediode ezitofwayo nezingafakwanga. Ke ngoko, sikholelwa ukuba i-PD anchoring idlala indima ekunqandeni ukwandiswa kwe-1SSF.
Nangona i-SIMS ayizange ibone i-hydrogen emva kwe-annealing kwi-1600 ° C, njengoko kuchazwe kwizifundo zangaphambili, siye sabona umphumo wokufakelwa kweproton ekunyanzelweni kwe-1SSF yokwandiswa, njengoko kuboniswe kwiMifanekiso 1 kunye ne-4. 3, 4. Ngoko ke, sikholelwa ukuba I-PD igxininiswe ngama-athomu e-hydrogen ngoxinaniso olungaphantsi komda wokufumanisa we-SIMS (2 × 1016 cm-3) okanye iziphene ezibangelwa kukufakelwa. Kufuneka kuqatshelwe ukuba asizange siqinisekise ukwanda kokuchasana kwe-state ngenxa yokwandiswa kwe-1SSF emva komthwalo okhoyo ngoku. Oku kunokuba ngenxa yoqhagamshelwano olungafezekanga lwe-ohmic olwenziwe kusetyenziswa inkqubo yethu, eya kupheliswa kungekudala.
Ukuqukumbela, siphuhlise indlela yokucima yokwandisa i-BPD kwi-1SSF kwi-4H-SiC PiN diode usebenzisa i-proton implantation ngaphambi kokwenziwa kwesixhobo. Ukuwohloka kweempawu ze-I–V ngexesha lofakelo lweproton ayibalulekanga, ngakumbi kwidosi yeproton ye-1012 cm–2, kodwa umphumo wokucinezela ukwandiswa kwe-1SSF ubalulekile. Nangona kolu phononongo senze i-10 µm engqindilili yePiN diode ngofakelo lweproton kubunzulu be-10 µm, kusenokwenzeka ukunyusa ngakumbi iimeko zofakelo kwaye sizisebenzise ukwenza ezinye iindidi zezixhobo ze-4H-SiC. Iindleko ezongezelelweyo zokwenziwa kwesixhobo ngexesha lokufakelwa kweproton kufuneka ziqwalaselwe, kodwa ziya kufana nezo ze-aluminium ion implantation, eyona nkqubo yokwenziwa kwezixhobo zombane ze-4H-SiC. Ke, ukufakelwa kweproton phambi kokusetyenzwa kwesixhobo yindlela enokwenzeka yokwenza izixhobo zamandla e-bipolar ze-4H-SiC ngaphandle kokonakala.
I-4-intshi ye-n-uhlobo lwe-4H-SiC wafer enobunzima be-epitaxial layer ye-10 µm kunye ne-doping concentration ye-1 × 1016 cm–3 isetyenziswe njengesampulu. Ngaphambi kokucubungula isixhobo, ii-ion ze-H + zafakwa kwipleyiti ngamandla okukhawuleza we-0.95 MeV kwiqondo lobushushu begumbi ukuya kubunzulu obumalunga ne-10 μm kwi-engile eqhelekileyo kumphezulu weplate. Ngexesha lokufakelwa kweproton, imaski kwipleyiti yayisetyenzisiwe, kwaye ipleyiti yayinamacandelo angenayo kunye ne-proton dose ye-1012, 1014, okanye i-1016 cm-2. Emva koko, ii-Al ion ezineedosi zeproton ze-1020 kunye ne-1017 cm-3 zahlohlwa phezu kwe-wafer yonke ukuya kubunzulu be-0-0.2 µm kunye ne-0.2-0.5 µm ukusuka phezulu, ilandelwa yi-annealing kwi-1600 ° C ukwenza i-carbon cap ukuya. yenza umaleko we-ap. -uhlobo. Emva koko, i-back side ye-Ni contact yafakwa kwicala le-substrate, ngelixa i-2.0 mm × 2.0 mm i-comb-shaped Ti / Al front side contact eyenziwa yi-photolithography kunye nenkqubo ye-peel yafakwa kwicala le-epitaxial layer. Ekugqibeleni, i-annealing yoqhagamshelwano yenziwa kwiqondo lobushushu le-700 °C. Emva kokusika i-wafer kwiichips, senze uphawu loxinzelelo kunye nesicelo.
Iimpawu ze-I-V ze-PiN diode ezenziweyo zabonwa kusetyenziswa i-HP4155B semiconductor parameter analyzer. Njengoxinzelelo lombane, i-10-millisecond pulsed current ye-212.5 A / cm2 yaziswa ngeeyure ze-2 kwi-frequency ye-10 pulses / sec. Xa sikhetha ubuninzi obuphantsi bangoku okanye ukuphindaphinda, asizange siqaphele ukwanda kwe-1SSF nakwi-PiN diode ngaphandle kwesitofu seproton. Ngexesha lombane wombane osetyenzisiweyo, ubushushu bePiN diode bujikeleze i-70 ° C ngaphandle kokufudumeza ngamabomu, njengoko kuboniswe kuMfanekiso S8. Imifanekiso ye-Electroluminescent ifunyenwe ngaphambi nangemva koxinzelelo lombane kwi-25 A / cm2 yangoku. I-synchrotron reflection yesiganeko sokutyisa i-X-reyi kusetyenziswa umqadi we-X-reyi we-monochromatic (λ = 0.15 nm) kwi-Aichi Synchrotron Radiation Centre, i-ag vector kwi-BL8S2 yi- -1-128 okanye 11-28 (jonga i-ref. 44 ngeenkcukacha) . ).
I-voltage frequency kwi-front current density ye-2.5 A / cm2 ikhutshwe kunye nekhefu le-0.5 V kwifig. 2 ngokweCVC yelizwe ngalinye lePiN diode. Ukusuka kwixabiso eliqhelekileyo loxinzelelo lwe-Vave kunye nokuphambuka okusemgangathweni σ woxinzelelo, sicwangcisa ijika eliqhelekileyo lokusabalalisa ngendlela yomgca onamachaphaza kuMfanekiso 2 usebenzisa le equation ilandelayo:
Werner, MR & Fahrner, WR Review on materials, microsensors, systems and devices for high-temperature and hard-environment applications. Werner, MR & Fahrner, WR Review on materials, microsensors, systems and devices for high-temperature and hard-environment applications.Werner, MR kunye noFarner, WR Isishwankathelo sezinto eziphathekayo, i-microsensors, iinkqubo kunye nezixhobo zokusetyenziswa kwiqondo lokushisa eliphezulu kunye neendawo ezinzima. Werner, MR & Fahrner, WR 对用于高温和恶劣环境应用的材料、微传感器、系统和设备的评论。 Werner, MR & Fahrner, WR Uphononongo lwezixhobo, ii-microsensors, iinkqubo kunye nezixhobo zobushushu obuphezulu kunye nezicelo ezimbi zokusingqongileyo.I-Werner, uMR kunye noFarner, i-WR Isishwankathelo sezinto eziphathekayo, i-microsensors, iinkqubo kunye nezixhobo zezicelo kwiqondo lokushisa eliphezulu kunye neemeko ezinzima.IEEE Trans. Ii-elektroniki zemizi-mveliso. 48, 249-257 (2001).
I-Kimoto, i-T. & Cooper, i-JA Iziseko ze-Silicon Carbide Technology ezisisiseko ze-Silicon Carbide Technology: Ukukhula, ukuPhathwa, izixhobo kunye nezicelo Vol. I-Kimoto, i-T. & Cooper, i-JA Iziseko ze-Silicon Carbide Technology ezisisiseko ze-Silicon Carbide Technology: Ukukhula, ukuPhathwa, izixhobo kunye nezicelo Vol.I-Kimoto, T. kunye ne-Cooper, i-JA Basics ye-Silicon Carbide Technology Basics ye-Silicon Carbide Technology: Ukukhula, iimpawu, izixhobo kunye nezicelo zeVol. Kimoto, T. & Cooper, JA 碳化硅技术基础碳化硅技术基础：增长、表征、设备和应用卷。 Kimoto, T. & Cooper, JA Carbon化silicon isiseko sobuchwephesha beCarbon化silicon isiseko sobuchwephesha: ukukhula, inkcazo, izixhobo kunye nomthamo wesicelo.I-Kimoto, T. kunye ne-Cooper, i-J. Iziseko ze-Silicon Carbide Technology Basics ze-Silicon Carbide Technology: Ukukhula, Iimpawu, Izixhobo kunye nezicelo Vol.252 (Wiley Singapore Pte Ltd, 2014).
I-Veliadis, V. URhwebo olukhulu lwe-SiC: Isimo se-Quo kunye neMiqobo ekufuneka Yoyisiwe. i-alma mater. inzululwazi. Iforamu 1062, 125-130 (2022).
Broughton, J., Smet, V., Tummala, RR & Joshi, YK Uphononongo lwetekhnoloji yokupakishwa kwe-thermal ye-automotive power electronics ngeenjongo zokutsala. Broughton, J., Smet, V., Tummala, RR & Joshi, YK Uphononongo lwetekhnoloji yokupakishwa kwe-thermal ye-automotive power electronics ngeenjongo zokutsala.Broughton, J., Smet, V., Tummala, RR kunye noJoshi, YK Isishwankathelo sobuchwephesha bokupakisha be-thermal kumbane wamandla e-automoto ngenjongo yokutsala. Broughton, J., Smet, V., Tummala, RR & Joshi, YK 用于牵引目的汽车电力电子热封装技术的回顾. Broughton, J., Smet, V., Tummala, RR & Joshi, YKBroughton, J., Smet, V., Tummala, RR kunye noJoshi, YK Isishwankathelo sobuchwephesha bokupakishwa kwe-thermal ye-automotive power electronics ngeenjongo zokutsalwa.J. Electron. Iphakheji. umbono. ASME 140, 1-11 (2018).
I-Sato, K., Kato, H. & Fukushima, T. Uphuhliso lwe-SiC lusetyenzisiwe inkqubo ye-traction ye-Shinkansen yesizukulwana esilandelayo koololiwe abahamba ngesantya esiphezulu. I-Sato, K., Kato, H. & Fukushima, T. Uphuhliso lwe-SiC lusetyenzisiwe inkqubo ye-traction ye-Shinkansen yesizukulwana esilandelayo koololiwe abahamba ngesantya esiphezulu.Sato K., Kato H. kunye noFukushima T. Uphuhliso lwenkqubo yokutsala yeSiC esetyenziswayo kwisizukulwana esilandelayo sikaloliwe ohamba ngesantya esiphezulu eShinkansen.U-Sato K., u-Kato H. kunye no-Fukushima T. Uphuhliso lweNkqubo yeTraction yeSicelo seSiC seSizukulwana esilandelayo se-High-Speed Shinkansen Trains. Isihlomelo IEEJ J. Ind. 9, 453–459 (2020).
Senzaki, J., Hayashi, S., Yonezawa, Y. & Okumura, H. Imingeni yokuqonda izixhobo zamandla eSiC ezithembeke kakhulu: Ukusuka kwimeko yangoku kunye nemiba yeewafers zeSiC. Senzaki, J., Hayashi, S., Yonezawa, Y. & Okumura, H. Imingeni yokuqonda izixhobo zamandla eSiC ezithembeke kakhulu: Ukusuka kwimeko yangoku kunye nemiba yeewafers zeSiC.Senzaki, J., Hayashi, S., Yonezawa, Y. kunye no-Okumura, H. Iingxaki ekuphunyezweni kwezixhobo zamandla ezithembekileyo ze-SiC: ukuqala kwimeko yangoku kunye nengxaki ye-wafer SiC. Senzaki, J., Hayashi, S., Yonezawa, Y. & Okumura, H. 实现高可靠性SiC 功率器件的挑战：从SiC 晶圆的现状和问题來。 Senzaki, J., Hayashi, S., Yonezawa, Y. & Okumura, H. Umceli mngeni wokufumana ukuthembeka okuphezulu kwizixhobo zamandla ze-SiC: ukusuka kwi-SiC 晶圆的电视和问题设计。U-Senzaki J, u-Hayashi S, u-Yonezawa Y. kunye no-Okumura H. Imingeni ekuphuhliseni izixhobo zamandla ezithembekileyo ezisekelwe kwi-silicon carbide: ukuphononongwa kwesimo kunye neengxaki ezinxulumene ne-silicon carbide wafers.Kwi-2018 IEEE International Symposium kwi-Reliability Physics (IRPS). (Senzaki, J. et al. ed.) 3B.3-1-3B.3-6 (IEEE, 2018).
UKim, D. & Sung, W. Uphuculo lobunzima besekethe emfutshane ye-1.2kV 4H-SiC MOSFET kusetyenziswa i-P-well enzulu ephunyezwe ngokufakelwa komjelo. UKim, D. & Sung, W. Uphuculo lobunzima besekethe emfutshane ye-1.2kV 4H-SiC MOSFET kusetyenziswa i-P-well enzulu ephunyezwe ngokufakelwa komjelo.UKim, D. kunye noSung, V. Uphuculo lwe-short-circuit immunity ye-1.2 kV 4H-SiC MOSFET kusetyenziswa i-P-well enzulu ephunyezwe ngokufakelwa komjelo. UKim, D. & Sung, W. 使用通过沟道注入实现的深P 阱提高了1.2kV 4H-SiC MOSFET 的短路耐用性。 UKim, D. & Sung, W. P 阱提高了1.2kV 4H-SiC MOSFETUKim, D. kunye noSung, V. Ukuphucula ukunyamezela kwi-short-circuit ye-1.2 kV 4H-SiC MOSFETs usebenzisa i-P-wells enzulu ngokufakela i-channel.IEEE Electronic Devices Lett. 42, 1822-1825 (2021).
Skowronski M. et al. Ukuphinda kuphuculwe intshukumo yeziphene kwi-4H-SiC pn diodes ephambili ephambili. J. Isicelo. i-physics. 92, 4699-4704 (2002).
Ha, S., Mieszkowski, P., Skowronski, M. & Rowland, LB Ukuguqulwa kwe-Dislocation kwi-4H i-silicon carbide epitaxy. Ha, S., Mieszkowski, P., Skowronski, M. & Rowland, LB Ukuguqulwa kwe-Dislocation kwi-4H i-silicon carbide epitaxy.Ha S., Meszkowski P., Skowronski M. kunye neRowland LB Ukuguqulwa kwe-Dislocation ngexesha le-4H i-silicon carbide epitaxy. Ha, S., Mieszkowski, P., Skowronski, M. & Rowland, LB 4H 碳化硅外延中的位错转换。 Ha, S., Mieszkowski, P., Skowronski, M. & Rowland, LB 4H Ha, S., Meszkowski, P., Skowronski, M. & Rowland, LBUkutshintshwa kwe-dislocation 4H kwi-silicon carbide epitaxy.J. Crystal. Ukukhula 244, 257-266 (2002).
I-Skowronski, M. & Ha, S. Ukuthotywa kwe-hexagonal silicon-carbide-based based bipolar devices. I-Skowronski, M. & Ha, S. Ukuthotywa kwe-hexagonal silicon-carbide-based based bipolar devices.I-Skowronski M. kunye ne-Ha S. Ukuthotywa kwezixhobo ze-bipolar ze-hexagonal ezisekelwe kwi-silicon carbide. Skowronski, M. & Ha, S. 六方碳化硅基双极器件的降解. Skowronski M. & Ha S.I-Skowronski M. kunye ne-Ha S. Ukuthotywa kwezixhobo ze-bipolar ze-hexagonal ezisekelwe kwi-silicon carbide.J. Isicelo. i-physics 99, 011101 (2006).
Agarwal, A., Fatima, H., Haney, S. & Ryu, S.-H. Agarwal, A., Fatima, H., Haney, S. & Ryu, S.-H.Agarwal A., Fatima H., Heini S. kunye noRyu S.-H. Agarwal, A., Fatima, H., Haney, S. & Ryu, S.-H. Agarwal, A., Fatima, H., Haney, S. & Ryu, S.-H.Agarwal A., Fatima H., Heini S. kunye noRyu S.-H.Indlela entsha yokuthotywa kwee-mosFET zamandla e-SiC aphezulu. IEEE Electronic Devices Lett. 28, 587-589 (2007).
I-Caldwell, i-JD, i-Stahlbush, i-RE, i-Ancona, i-MG, i-Glembocki, i-OJ & ne-Hobart, i-KD Kumandla okuqhuba i-recombination-induced stacking fault motion kwi-4H-SiC. I-Caldwell, i-JD, i-Stahlbush, i-RE, i-Ancona, i-MG, i-Glembocki, i-OJ & ne-Hobart, i-KD Kwi-drive force ye-recombination-induced stacking fault motion kwi-4H-SiC.I-Caldwell, i-JD, i-Stalbush, i-RE, i-Ancona, i-MG, i-Glemboki, i-OJ, kunye ne-Hobart, i-KD Kwi-drive force of recombination-induced stacking fault motion kwi-4H-SiC. Caldwell, JD, Stahlbush, RE, Ancona, MG, Glembocki, OJ & Hobart, KD 关于4H-SiC 中复合引起的层错运动的驱动力。 Caldwell, JD, Stahlbush, RE, Ancona, MG, Glembocki, OJ & Hobart, KDI-Caldwell, i-JD, i-Stalbush, i-RE, i-Ancona, i-MG, i-Glemboki, i-OJ, kunye ne-Hobart, i-KD, Ekuqhubeni ukuqhubela phambili kwe-recombination-induced stacking fault motion kwi-4H-SiC.J. Isicelo. i-physics. 108, 044503 (2010).
Iijima, A. & Kimoto, T. Imodeli yamandla e-elektroniki ye-Shockley eyodwa yokubunjwa kwephutha kwi-crystals ye-4H-SiC. Iijima, A. & Kimoto, T. Imodeli yamandla e-elektroniki ye-Shockley eyodwa yokubunjwa kwephutha kwi-crystals ye-4H-SiC.Iijima, A. kunye neKimoto, T. Imodeli ye-Electron-energy yokwakhiwa kweziphene enye ye-Shockley yokupakisha kwi-crystals ye-4H-SiC. Iijima, A. & Kimoto, T. 4H-SiC 晶体中单Shockley 堆垛层错形成的电子能量模型. Iijima, A. & Kimoto, T. Imodeli yamandla e-elektroniki ye-Shockley eyodwa yokubunjwa kwephutha kwi-crystal 4H-SiC.Iijima, A. kunye neKimoto, T. Imodeli ye-Electron-energy yokwakhiwa kwesiphako esisodwa I-Shockley yokupakisha kwi-crystals ye-4H-SiC.J. Isicelo. i-physics 126, 105703 (2019).
Iijima, A. & Kimoto, T. Uqikelelo lwemeko ebalulekileyo yokwandiswa / ukuchithwa kweempazamo ze-Shockley stacking eyodwa kwi-4H-SiC PiN diodes. Iijima, A. & Kimoto, T. Uqikelelo lwemeko ebalulekileyo yokwandiswa / ukuchithwa kweempazamo ze-Shockley stacking eyodwa kwi-4H-SiC PiN diodes.Iijima, A. kunye neKimoto, T. Uqikelelo lwemeko ebalulekileyo yokwandiswa / ukunyanzeliswa kwe-Shockley eyodwa yokupakisha iziphene kwi-4H-SiC PiN-diodes. Iijima, A. & Kimoto, T. 估计4H-SiC PiN 二极管中单个Shockley 堆垛层错膨胀/收缩的临界条件。 Iijima, A. & Kimoto, T. Uqikelelo olulodwa lwe-Shockley stacking layer extensions/contraction condition in 4H-SiC PiN diodes.Iijima, A. kunye neKimoto, T. Uqikelelo lweemeko ezinzima zokwandiswa / ukunyanzeliswa kwesiphako esisodwa sokupakisha i-Shockley kwi-4H-SiC PiN-diodes.isicelo physics Wright. 116, 092105 (2020).
Mannen, Y., Shimada, K., Asada, K. & Ohtani, N. I-Quantum imodeli yesenzo kakuhle sokwenziwa kwempazamo enye ye-Shockley stacking kwi-crystal ye-4H-SiC phantsi kweemeko ezingalinganiyo. Mannen, Y., Shimada, K., Asada, K. & Ohtani, N. I-Quantum imodeli yesenzo kakuhle sokwenziwa kwempazamo enye ye-Shockley stacking kwi-crystal ye-4H-SiC phantsi kweemeko ezingalinganiyo.UMannen Y., uShimada K., u-Asada K., kunye no-Otani N. Imodeli ye-quantum kakuhle yokuqulunqwa kwephutha elilodwa le-Shockley stacking kwi-crystal ye-4H-SiC phantsi kweemeko ezingenakulinganiswa.UMannen Y., uShimada K., u-Asada K. kunye no-Otani N. I-Quantum imodeli yokusebenzisana kakuhle ukwenzela ukuqulunqwa kweempazamo ze-Shockley zokupakisha kwiikristale ze-4H-SiC phantsi kweemeko ezingalinganiyo. J. Isicelo. i-physics. 125, 085705 (2019).
Galeckas, A., Linnros, J. & Pirouz, P. Iimpazamo zokupakisha ezidityanisiweyo ezidityanisiweyo: Ubungqina bendlela eqhelekileyo kwi-SiC enehexagonal. Galeckas, A., Linnros, J. & Pirouz, P. Iimpazamo zokupakisha ezidityanisiweyo ezidityanisiweyo: Ubungqina bendlela eqhelekileyo kwi-SiC enehexagonal.I-Galeckas, A., Linnros, J. kunye nePirouz, P. Iimpazamo zokuPakisha eziNxulunyanisiweyo zokuPhakanyiswa: Ubungqina beNdlela eqhelekileyo kwi-Hexagonal SiC. Galeckas, A., Linnros, J. & Pirouz, P. 复合诱导的堆垛层错：六方SiC 中一般机制的证据。 Galeckas, A., Linnros, J. & Pirouz, P. Ubungqina bendlela ngokubanzi yomaleko wokupakisha owenziweyo odibeneyo: 六方SiC.I-Galeckas, A., Linnros, J. kunye nePirouz, P. Iimpazamo zokuPakisha eziNxulunyanisiweyo zokuPhakanyiswa: Ubungqina beNdlela eqhelekileyo kwi-Hexagonal SiC.physics Umfundisi Wright. 96, 025502 (2006).
Ishikawa, Y., Sudo, M., Yao, Y.-Z., Sugawara, Y. & Kato, M. Ukwandiswa kwempazamo enye ye-Shockley stacking kwi-4H-SiC (11 2 ¯0) epitaxial layer ebangelwa yi-electron i-beam irradiation.Ishikawa , Y. , M. Sudo , Y.-Z beam irradiation.Ishikawa, Y., Sudo M., Y.-Z Psychology.Ibhokisi, Ю., M. Судо, Y.-Z Chem., J. Chem., 123, 225101 (2018).
Kato, M., Katahira, S., Ichikawa, Y., Harada, S. & Kimoto, T. Ukuqwalaselwa kwe-carrier recombination in single Shockley stacking faults and at partial dislocations in 4H-SiC. Kato, M., Katahira, S., Ichikawa, Y., Harada, S. & Kimoto, T. Ukuqwalaselwa kwe-carrier recombination in single Shockley stacking faults and at partial dislocations in 4H-SiC.I-Kato M., i-Katahira S., i-Itikawa Y., i-Harada S. kunye ne-Kimoto T. Ukuqwalaselwa kwe-Carrier Recombination kwi-Single Shockley Packing Defects and Partial Dislocations in 4H-SiC. Kato, M., Katahira, S., Ichikawa, Y., Harada, S. & Kimoto, T. 单Shockley 堆垛层错和4H-SiC 部分位错中载流子复合的观察. Kato, M., Katahira, S., Ichikawa, Y., Harada, S. & Kimoto, T. 单Shockley ukupakisha kunye ne4H-SiC inxalenye ye-位错中载流子去生的可以。I-Kato M., i-Katahira S., i-Itikawa Y., i-Harada S. kunye ne-Kimoto T. Ukuqwalaselwa kwe-Carrier Recombination kwi-Single Shockley Packing Defects and Partial Dislocations in 4H-SiC.J. Isicelo. i-physics 124, 095702 (2018).
I-Kimoto, T. & Watanabe, H. Ubunjineli besiphako kwi-teknoloji ye-SiC yezixhobo zamandla aphezulu. I-Kimoto, T. & Watanabe, H. Ubunjineli besiphako kwi-teknoloji ye-SiC yezixhobo zamandla aphezulu.Kimoto, T. kunye noWatanabe, H. Ukuphuhliswa kweziphene kwi-teknoloji ye-SiC yezixhobo zombane eziphezulu. Kimoto, T. & Watanabe, H. 用于高压功率器件的SiC 技术中的缺陷工程。 I-Kimoto, T. & Watanabe, H. Ubunjineli besiphako kwi-teknoloji ye-SiC yezixhobo zamandla aphezulu.Kimoto, T. kunye noWatanabe, H. Ukuphuhliswa kweziphene kwi-teknoloji ye-SiC yezixhobo zombane eziphezulu.isicelo sefiziksi Express 13, 120101 (2020).
Zhang, Z. & Sudarshan, TS Basal plane dislocation-free epitaxy of silicon carbide. Zhang, Z. & Sudarshan, TS Basal plane dislocation-free epitaxy of silicon carbide.I-Zhang Z. kunye ne-Sudarshan TS I-Dislocation-free epitaxy ye-silicon carbide kwindiza ye-basal. Zhang, Z. & Sudarshan, TS 碳化硅基面无位错外延。 Zhang, Z. & Sudarshan, TSI-Zhang Z. kunye ne-Sudarshan TS I-Dislocation-free epitaxy ye-silicon carbide basal planes.ingxelo. i-physics. Wright. 87, 151913 (2005).
Zhang, Z., Moulton, E. & Sudarshan, TS Mechanism yokuphelisa i-basal plane dislocations kwiifilimu ezincinci ze-SiC nge-epitaxy kwi-substrate edibeneyo. Zhang, Z., Moulton, E. & Sudarshan, TS Mechanism yokuphelisa i-basal plane dislocations kwiifilimu ezincinci ze-SiC nge-epitaxy kwi-substrate edibeneyo.I-Zhang Z., i-Moulton E. kunye ne-Sudarshan TS Mechanism yokupheliswa kwe-base plane dislocations kwiifilimu ezibhityileyo ze-SiC nge-epitaxy kwi-substrate edibeneyo. Zhang, Z., Moulton, E. & Sudarshan, TS 通过在蚀刻衬底上外延消除SiC 薄膜中基面位错的机制. Zhang, Z., Moulton, E. & Sudarshan, TS Indlela yokuphelisa ifilimu encinci ye-SiC ngokufaka i-substrate.I-Zhang Z., i-Moulton E. kunye ne-Sudarshan TS Mechanism yokupheliswa kwe-base plane dislocations kwi-SiC films ezincinci nge-epitaxy kwii-substrates ezifakiwe.isicelo physics Wright. 89, 081910 (2006).
Shtalbush RE et al. Ukuphazamiseka kokukhula kukhokelela ekunciphiseni kwe-basal plane dislocations ngexesha le-4H-SiC epitaxy. ingxelo. i-physics. Wright. 94, 041916 (2009).
Zhang, X. & Tsuchida, H. Ukuguqulwa kwe-basal plane dislocations to threading edge dislocations kwi-4H-SiC epilayers nge-annealing ephezulu yokushisa. Zhang, X. & Tsuchida, H. Ukuguqulwa kwe-basal plane dislocations to threading edge dislocations kwi-4H-SiC epilayers nge-annealing ephezulu yokushisa.I-Zhang, i-X. kunye ne-Tsuchida, i-H. Ukuguqulwa kwe-basal plane dislocations kwi-threading edge dislocations kwi-4H-SiC epitaxial layers nge-annealing ephezulu yokushisa. Zhang, X & Tsuchida, H. 通过高温退火将4H-SiC 外延层中的基面位错转化為螺纹刃位错. Zhang, X. & Tsuchida, H. 通过高温退火将4H-SiCI-Zhang, i-X. kunye ne-Tsuchida, i-H. Ukuguqulwa kwe-base plane dislocations kwi-filament edge dislocations kwi-4H-SiC epitaxial layers nge-annealing ephezulu yokushisa.J. Isicelo. i-physics. 111, 123512 (2012).
Ingoma, H. & Sudarshan, TS Basal plane dislocation conversion kufuphi ne-epilayer / substrate interface ekukhuleni kwe-epitaxial ye-4 ° off-axis 4H-SiC. Ingoma, H. & Sudarshan, TS Basal plane dislocation conversion kufuphi ne-epilayer / substrate interface ekukhuleni kwe-epitaxial ye-4 ° off-axis 4H-SiC.Ingoma, i-H. kunye ne-Sudarshan, i-TS Ukuguqulwa kwe-basal plane dislocations kufuphi ne-epitaxial layer / substrate interface ngexesha lokukhula kwe-off-axis epitaxial ye-4H-SiC. Ingoma, H. & Sudarshan, TS 在4° 离轴4H-SiC 外延生长中外延层/衬底界面附近的基底平面位错转换。 Ingoma, H. & Sudarshan, TS 在4° 离轴4H-SiC Ingoma, H. & Sudarshan, TSUkutshintshwa kwe-Planar dislocation ye-substrate kufuphi ne-epitaxial layer / substrate boundary ngexesha lokukhula kwe-epitaxial ye-4H-SiC ngaphandle kwe-4 ° axis.J. Crystal. Ukukhula 371, 94-101 (2013).
Konishi, K. et al. Ngexesha eliphezulu, ukusabalalisa kwe-basal plane dislocation stacking fault in 4H-SiC epitaxial layers iguqulela kwi-filament edge dislocations. J. Isicelo. i-physics. 114, 014504 (2013).
Konishi, K. et al. Yila iileya ze-epitaxial ze-bipolar ezingonakali ze-SiC MOSFETs ngokubona iindawo ezongezelelekileyo ze-nucleation yempazamo kuhlalutyo lwe-X-reyi ye-topographic. I-AIP Advanced 12, 035310 (2022).
Lin, S. et al. Impembelelo yesakhiwo se-basal plane dislocation kwi-propagation ye-Shockley-type stacking fault ngexesha lokubola kwangaphambili kwe-4H-SiC pin diode. Japhan. J. Isicelo. i-physics. 57, 04FR07 (2018).
Tahara, T., et al. Ubomi obufutshane obufutshane be-nitrogen-rich 4H-SiC epilayers isetyenziselwa ukucinezela iimpazamo zokupakisha kwii-PiN diodes. J. Isicelo. i-physics. 120, 115101 (2016).
Tahara, T. et al. Ukuxhomekeka komthwalo womthwali otofwayo we-Shockley enye yokupakisha impazamo yosasazo kwi-4H-SiC PiN diode. J. Isicelo. I-Physics 123, 025707 (2018).
Mae, S., Tawara, T., Tsuchida, H. & Kato, M. Microscopic FCA inkqubo yokulinganisa ubomi bomthwali obunzulu kwi-SiC. Mae, S., Tawara, T., Tsuchida, H. & Kato, M. Microscopic FCA inkqubo yokulinganisa ubomi bomthwali obunzulu kwi-SiC.Mei, S., Tawara, T., Tsuchida, H. kunye ne-Kato, iNkqubo yeMicroscopic ye-FCA ye-Depth-Resolved Carrier Lifetime Measurements kwi-Silicon Carbide. Mae, S., Tawara, T., Tsuchida, H. & Kato, M. 用于SiC 中深度分辨载流子寿命测量的显微FCA 系统. Mae, S., Tawara, T., Tsuchida, H. & Kato, M. YeSiC ubunzulu obuphakathiI-Mei S., i-Tawara T., i-Tsuchida H. kunye ne-Kato M. Inkqubo ye-Micro-FCA yokulinganisa ubunzulu bomthwali wobomi kwi-silicon carbide.alma mater science Forum 924, 269-272 (2018).
Hirayama, T. et al. Ukusabalalisa ubunzulu bexesha lobomi bomthwali kwiingqimba ze-4H-SiC ze-epitaxial ezingqingqwa zilinganiswe ngokungenakonakala kusetyenziswa isisombululo sexesha lokufunxa i-carrier carrier kunye nokukhanya okuwela. Tshintshela kwisayensi. imitha. 91, 123902 (2020).
Ixesha lokuposa: Nov-06-2022
