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4H-SiC e rekisitsoe e le thepa ea lisebelisoa tsa semiconductor ea matla. Leha ho le joalo, ho tšepahala ha nako e telele ea lisebelisoa tsa 4H-SiC ke tšitiso ho ts'ebeliso ea bona e pharaletseng, 'me bothata ba bohlokoa ka ho fetisisa ba ho tšepahala ha lisebelisoa tsa 4H-SiC ke ho senyeha ha maikutlo a ho ferekana kelellong. Ho senyeha hona ho bakoa ke phatlalatso e le 'ngoe ea Shockley stacking fault (1SSF) ea ho senyeha ha sefofane sa basal ka likristale tsa 4H-SiC. Mona, re sisinya mokhoa oa ho hatella katoloso ea 1SSF ka ho kenya li-proton ho li-wafers tsa 4H-SiC epitaxial. Li-diode tsa PiN tse entsoeng ka li-wafer tse kentsoeng proton li bonts'itse litšobotsi tse tšoanang tsa motlakase oa hajoale joalo ka diode ntle le ho kenngoa ha proton. Ka lehlakoreng le leng, katoloso ea 1SSF e hatelloa ka nepo ho diode ea PiN e kentsoeng ka proton. Kahoo, ho kenngoa ha li-proton ho li-wafers tsa 4H-SiC epitaxial ke mokhoa o atlehang oa ho hatella ho senyeha ha maikutlo a 4H-SiC matla a semiconductor ha u ntse u boloka ts'ebetso ea lisebelisoa. Sephetho sena se kenya letsoho ho nts'etsopele ea lisebelisoa tse tšepahalang tsa 4H-SiC.
Silicon carbide (SiC) e tsejoa ka ho pharaletseng e le thepa ea semiconductor bakeng sa lisebelisoa tse phahameng tsa matla, tse phahameng-frequency semiconductor tse ka sebetsang libakeng tse thata1. Ho na le li-polytypes tse ngata tsa SiC, tseo har'a tsona 4H-SiC e nang le lisebelisoa tse ntle tsa lisebelisoa tsa semiconductor tse kang ho tsamaea ha elektronike e phahameng le ho senyeha ho matla ha motlakase2. Li-wafers tsa 4H-SiC tse bophara ba lisenthimithara tse 6 hajoale li rekisoa ebile li sebelisetsoa ho hlahisa lisebelisoa tse ngata tsa matla a semiconductor3. Mekhoa ea ho hula likoloi tsa motlakase le literene li entsoe ka lisebelisoa tsa 4H-SiC4.5 tsa semiconductor tsa matla. Leha ho le joalo, lisebelisoa tsa 4H-SiC li ntse li na le mathata a nako e telele a ts'eptjoang a kang ho senyeha ha dielectric kapa ho tšepahala ha nako e khutšoanyane, 6,7 eo e 'ngoe ea lintlha tsa bohlokoa ka ho fetisisa tse ka tšeptjoang ke ho senyeha ha bipolar2,8,9,10,11. Tšenyo ena ea ho ferekana kelellong e ile ea sibolloa lilemo tse fetang 20 tse fetileng mme esale e le bothata boqaping ba sesebelisoa sa SiC.
Ho senyeha ha Bipolar ho bakoa ke phoso e le 'ngoe ea Shockley stack (1SSF) ka likristale tsa 4H-SiC tse nang le li-basal plane dislocations (BPDs) tse phatlalatsoang ke recombination e ntlafalitsoeng ea dislocation glide (REDG)12,13,14,15,16,17,18,19. Ka hona, haeba katoloso ea BPD e hatelloa ho 1SSF, lisebelisoa tsa matla tsa 4H-SiC li ka etsoa ntle le ho senyeha ha bipolar. Ho tlalehiloe mekhoa e mengata ea ho hatella phatlalatso ea BPD, joalo ka BPD ho Thread Edge Dislocation (TED) phetoho 20,21,22,23,24. Li-wafers tsa morao-rao tsa SiC epitaxial, BPD e teng haholo-holo ka har'a substrate eseng ka har'a epitaxial layer ka lebaka la phetoho ea BPD ho TED nakong ea pele ea kholo ea epitaxial. Ka hona, bothata bo setseng ba ho senyeha ha bipolar ke ho ajoa ha BPD ka substrate 25,26,27. Ho kenngoa ha "motsoako o matlafatsang" pakeng tsa lera la ho hoholeha le substrate ho hlahisitsoe e le mokhoa o atlehang oa ho hatella ho atolosoa ha BPD ho substrate28, 29, 30, 31. Lera lena le eketsa monyetla oa ho kopanya li-electron-hole pair ho epitaxial layer le SiC substrate. Ho fokotsa palo ea li-electron-hole pairs ho fokotsa matla a ho khanna a REDG ho BPD ka substrate, kahoo motsoako o matlafatsang o ka hatella ho senyeha ha maikutlo a ho ferekana kelellong. Hoa lokela ho hlokomeloa hore ho kenngoa ha lera ho kenyelletsa litšenyehelo tse eketsehileng ha ho etsoa li-wafers, 'me ntle le ho kenngoa ha lera ho thata ho fokotsa palo ea lipara tsa elektronike-hole ka ho laola feela taolo ea bophelo bohle ba mojari. Ka hona, ho ntse ho e-na le tlhokahalo e matla ea ho hlahisa mekhoa e meng ea khatello ho finyella tekanyo e ntle pakeng tsa litšenyehelo tsa tlhahiso ea lisebelisoa le lihlahisoa.
Hobane ho atolosoa ha BPD ho 1SSF ho hloka ho sisinyeha ha karolo e itseng (PDs), ho penya PD ke mokhoa o ts'episang oa ho thibela ho senyeha ha maikutlo a ho ferekana kelellong. Le hoja PD e phunyeletsoa ka litšila tsa tšepe e tlalehiloe, li-FPD ho li-substrates tsa 4H-SiC li fumaneha hole ho feta 5 μm ho tloha holim'a lera la epitaxial. Holim'a moo, kaha coefficient ea phallo ea tšepe efe kapa efe ho SiC e nyane haholo, ho thata hore lits'ila tsa tšepe li kenelle ka har'a substrate34. Ka lebaka la bongata bo boholo ba athomo ea tšepe, ho kenngoa ha ion ea tšepe le hona ho thata. Ka lehlakoreng le leng, tabeng ea haedrojene, ntho e bobebe ka ho fetisisa, li-ion (protons) li ka kenngoa ho 4H-SiC ho ea botebong ba ho feta 10 µm ho sebelisa accelerator ea MeV-class. Ka hona, haeba ho kenngoa ha proton ho ama PD pinning, joale e ka sebelisoa ho hatella phatlalatso ea BPD ka har'a substrate. Leha ho le joalo, ho kenngoa ha proton ho ka senya 4H-SiC mme ho fella ka ho fokotsa ts'ebetso ea lisebelisoa37,38,39,40.
E le ho hlōla ho senyeha ha sesebelisoa ka lebaka la ho kenngoa ha proton, ho sebelisoa ha mocheso o phahameng oa mocheso ho lokisa tšenyo, e tšoanang le mokhoa oa annealing o atisang ho sebelisoa ka mor'a ho kenngoa ha ion ea ho amohela mochine oa mochine1, 40, 41, 42. Le hoja ion mass spectrometry ea bobeli (SIMS)43 e na le tlalehile hydrogen diffusion ka lebaka la annealing phahameng-thempereichara, ho ka etsahala hore feela segokanyipalo sa liathomo tsa haedrojene haufi le FD ha hoa lekana ho lemoha pinning ea PR sebelisa SIMS. Ka hona, thutong ena, re kentse li-proton ho li-wafers tsa 4H-SiC epitaxial pele ho ts'ebetso ea ho etsa lisebelisoa, ho kenyelletsa le mocheso o phahameng oa mocheso. Re sebelisitse li-diode tsa PiN joalo ka meaho ea lisebelisoa tsa liteko mme ra li etsa ho li-wafers tse kentsoeng ka proton 4H-SiC epitaxial. Ka mor'a moo re ile ra hlokomela litšobotsi tsa volt-ampere ho ithuta ho senyeha ha ts'ebetso ea sesebelisoa ka lebaka la ente ea proton. Ka mor'a moo, re ile ra bona katoloso ea 1SSF litšoantšong tsa electroluminescence (EL) ka mor'a ho sebelisa motlakase oa motlakase ho diode ea PiN. Qetellong, re netefalitse phello ea ente ea proton khatellong ea katoloso ea 1SSF.
Ka feiga. Setšoantšo sa 1 se bonts'a litšobotsi tsa hona joale tsa motlakase (CVCs) tsa PiN diode ka mocheso oa kamore libakeng tse nang le proton le ntle le ho kenngoa pele ho pulsed hona joale. PiN diode tse nang le ente ea proton li bonts'a litšobotsi tsa tokiso tse ts'oanang le li-diode ntle le ente ea proton, leha litšobotsi tsa IV li arolelanoa lipakeng tsa diode. Ho bontša phapang pakeng tsa maemo a ente, re ile ra rera maqhubu a motlakase ka lebelo la pele la 2.5 A / cm2 (e lumellanang le 100 mA) e le palo ea lipalo-palo joalokaha ho bontšitsoe setšoantšong sa 2. Lekhalo le lekanyelitsoeng ke kabo e tloaelehileng le eona e emetsoe. ka mola o matheba. mola. Joalo ka ha ho bonoa litlhorong tsa li-curve, khanyetso ea ho hanyetsa e eketseha hanyane ho litekanyetso tsa proton tsa 1014 le 1016 cm-2, ha diode ea PiN e nang le tekanyo ea proton ea 1012 cm-2 e bonts'a litšobotsi tse batlang li tšoana le ntle le ho kenngoa ha proton. . Re ile ra boela ra kenya proton ka mor'a ho etsoa ha li-PiN diode tse neng li sa bontše electroluminescence e tšoanang ka lebaka la tšenyo e bakiloeng ke ho kenngoa ha proton joalokaha ho bontšitsoe ho Setšoantšo sa S1 joalokaha ho hlalositsoe lithutong tse fetileng37,38,39. Ka hona, annealing ka 1600 ° C ka mor'a ho kenngoa ha Al ion ke mokhoa o hlokahalang oa ho etsa lisebelisoa ho kenya mochine oa Alcceptor, o ka lokisang tšenyo e bakiloeng ke ho kenngoa ha proton, e leng se etsang hore li-CVC li tšoane pakeng tsa proton PiN diode tse kentsoeng le tse sa kenngoeng. . Maqhubu a morao-rao a morao-rao ho -5 V a boetse a hlahisoa ho Setšoantšo sa S2, ha ho na phapang e khōlō pakeng tsa diode tse nang le ente ea proton le ntle le eona.
Litšobotsi tsa Volt-ampere tsa diode tsa PiN tse nang le li-proton tse kentsoeng le ntle le mocheso oa kamore. Tšōmo e bontša tekanyo ea protons.
Maqhubu a motlakase ka ho toba 2.5 A/cm2 bakeng sa diode tsa PiN tse nang le li-proton tse kentsoeng le tse sa kenngoeng. Mohala o nang le matheba o lumellana le kabo e tloaelehileng.
Ka feiga. 3 e bonts'a setšoantšo sa EL sa diode ea PiN e nang le boima ba hona joale ba 25 A / cm2 ka mor'a motlakase. Pele o sebelisa mojaro oa hona joale oa pulsed, libaka tse lefifi tsa diode ha lia ka tsa hlokomeloa, joalokaha ho bontšitsoe setšoantšong sa 3. C2. Leha ho le joalo, joalokaha ho bontšitsoe feiga. 3a, ka har'a diode ea PiN ntle le ho kenngoa ha proton, libaka tse 'maloa tse mebala e lefifi tse nang le mapheo a khanyang li ile tsa bonoa ka mor'a ho sebelisa motlakase oa motlakase. Libaka tse joalo tse lefifi tse bōpehileng joaloka molamu li bonoa litšoantšong tsa EL bakeng sa 1SSF e tlohang ho BPD ho substrate28,29. Ho e-na le hoo, liphoso tse ling tse atolositsoeng tsa stacking li ile tsa hlokomeloa ka li-diode tsa PiN tse nang le li-proton tse kentsoeng, joalokaha ho bontšitsoe setšoantšong sa 3b-d. Re sebelisa X-ray topography, re netefalitse boteng ba PRs tse ka tlohang ho BPD ho ea substrate sebakeng sa li-contacts tsa PiN diode ntle le ente ea proton (Setšoantšo sa 4: setšoantšo sena ntle le ho tlosa electrode e ka holimo (setšoantšo, PR). tlas'a li-electrode ha li bonahale). Ka hona, sebaka se lefifi se setšoantšong sa EL se lumellana le 1SSF BPD e atolositsoeng ka har'a substrate ea litšoantšo tse ling tse laolehileng tsa PiN li bontšoa ho Figures 1 le 2. Videos S3-S6 le ntle le ho atolosoa. libaka tse lefifi (litšoantšo tsa EL tse fapaneng tsa nako ea diode tsa PiN ntle le ente ea proton le ho kenngoa ho 1014 cm-2) li boetse li bontšoa ho Boitsebiso bo Tlatselletsang.
EL litšoantšo tsa PiN diode ho 25 A/cm2 ka mor'a lihora tse 2 tsa khatello ea motlakase (a) ntle le ho kenngoa ha proton le ka litekanyetso tse kenngoeng tsa (b) 1012 cm-2, (c) 1014 cm-2 le (d) 1016 cm-2 protons.
Re balile boima ba 1SSF e atolositsoeng ka ho bala libaka tse lefifi tse nang le likhahla tse khanyang ho li-PiN diode tse tharo bakeng sa boemo bo bong le bo bong, joalokaha ho bontšitsoe setšoantšong sa 5. Boima ba 1SSF bo atolositsoeng bo fokotseha ka tekanyo ea proton e ntseng e eketseha, esita le ka tekanyo ea 1012 cm-2, boima ba 1SSF bo atolositsoeng bo tlase haholo ho feta ka piN diode e sa kenngoeng.
Ho eketseha ha sekhahla sa li-diode tsa SF PiN tse kenngoeng le ntle le ho kenngoa ha proton ka mor'a ho jara ka pulsed current (sebaka se seng le se seng se kenyelelitse li-diode tse tharo tse laetsoeng).
Ho khutsufatsa nako ea bophelo ba motho ea tsamaisang thepa ho boetse ho ama khatello ea katoloso, 'me ente ea proton e fokotsa nako ea bophelo ea mojari32,36. Re hlokometse nako ea bophelo ba motho ea tsamaisang thepa ka har'a epitaxial layer ea 60 µm e teteaneng e nang le li-proton tse kentsoeng tsa 1014 cm-2. Ho tloha nakong ea pele ea bophelo ba mojari, le hoja ho kenngoa ho fokotsa boleng ho ~ 10%, annealing e latelang e khutlisetsa ~ 50%, joalokaha ho bontšitsoe setšoantšong sa S7. Ka hona, nako ea bophelo ea mojari, e fokotsehileng ka lebaka la ho kenngoa ha proton, e tsosolosoa ka ho kenngoa ha mocheso o phahameng. Le hoja phokotso ea 50% ea bophelo ba bajari e boetse e hatella ho ata ha liphoso tsa stacking, litšoaneleho tsa I-V, tseo ka tloaelo li itšetlehileng ka bophelo ba mojari, li bontša feela phapang e nyenyane pakeng tsa diode tse kentsoeng le tse sa kenngoeng. Ka hona, re lumela hore PD anchoring e bapala karolo ho thibela katoloso ea 1SSF.
Le hoja SIMS e sa ka ea bona hydrogen ka mor'a ho kenngoa ha 1600 ° C, joalokaha ho tlalehiloe liphuputsong tse fetileng, re hlokometse phello ea ho kenngoa ha proton ho hatelloa ha 1SSF katoloso, joalokaha ho bontšitsoe litšoantšong 1 le 4. 3, 4. Ka hona, re lumela hore PD e tšehelitsoe ke liathomo tsa haedrojene tse nang le boima bo ka tlase ho moeli oa ho lemoha oa SIMS (2 × 1016 cm-3) kapa bofokoli ba ntlha bo bakoang ke ho kenngoa. Hoa lokela ho hlokomeloa hore ha re e-s'o tiise keketseho ea khanyetso ea mmuso ka lebaka la bolelele ba 1SSF ka mor'a hore ho be le mojaro oa hona joale. Sena se ka ba ka lebaka la mabitso a sa phethahalang a ohmic a entsoeng ho sebelisoa ts'ebetso ea rona, e tla felisoa haufinyane.
Qetellong, re thehile mokhoa oa ho tima bakeng sa ho atolosa BPD ho 1SSF ka diode tsa 4H-SiC PiN re sebelisa ho kenngoa ha proton pele ho etsoa lisebelisoa. Ho senyeha ha tšobotsi ea I-V nakong ea ho kenngoa ha proton ha ho letho, haholo-holo ka tekanyo ea proton ea 1012 cm-2, empa phello ea ho hatella katoloso ea 1SSF e bohlokoa. Leha thutong ena re thehile diode tse 10 µm tse botenya tsa PiN tse kentsoeng proton ho isa botebong ba 10 µm, ho ntse ho khonahala ho ntlafatsa maemo a ho kengoa le ho a sebelisa ho etsa mefuta e meng ea lisebelisoa tsa 4H-SiC. Litšenyehelo tse eketsehileng bakeng sa lisebelisoa tsa lisebelisoa nakong ea ho kenngoa ha proton li lokela ho nkoa, empa li tla tšoana le tsa ho kenngoa ha aluminium ion, e leng mokhoa o ka sehloohong oa ho etsa lisebelisoa tsa matla a 4H-SiC. Kahoo, ho kenngoa ha proton pele ho ts'ebetso ea lisebelisoa ke mokhoa o ka khonehang oa ho etsa lisebelisoa tsa matla a bipolar tsa 4H-SiC ntle le ho senyeha.
Sephaphatha sa 4-inch n-type 4H-SiC se nang le botenya ba epitaxial ea 10 µm le "donor doping concentration" ea 1 × 1016 cm–3 e sebelisitsoe e le sampuli. Pele o sebetsana le sesebelisoa, li-ion tsa H + li ne li kenngoa ka poleiti ka matla a ho potlakisa a 0.95 MeV mocheso oa kamore ho ea botebong ba 10 μm ka lehlakoreng le tloaelehileng ho ea holim'a poleiti. Nakong ea ho kenngoa ha proton, mask holim'a poleiti e ne e sebelisoa, 'me poleiti e ne e e-na le likarolo tse se nang le tekanyo ea proton ea 1012, 1014, kapa 1016 cm-2. Ka mor'a moo, li-ion tse nang le litekanyo tsa proton tsa 1020 le 1017 cm-3 li ile tsa kenngoa holim'a sephaka kaofela ho ea botebong ba 0-0.2 µm le 0.2-0.5 µm ho tloha holimo, 'me ea lateloa ke annealing ka 1600 ° C ho etsa cap cap to carbon. theha ap layer. - mofuta. Ka mor'a moo, lehlakoreng le ka morao la Ni contact le ile la kenngoa ka lehlakoreng la substrate, ha 2.0 mm × 2.0 mm e bōpehileng joaloka motsoako oa Ti / Al o ka pele o entsoeng ke photolithography le mokhoa oa peel o ile oa kenngoa ka lehlakoreng la epitaxial. Qetellong, annealing ea ho kopana e etsoa ka mocheso oa 700 ° C. Kamora ho seha sephaphatha hore e be li-chips, re ile ra etsa sebopeho sa khatello ea maikutlo le ts'ebeliso.
Litšobotsi tsa I-V tsa li-diode tsa PiN tse entsoeng li ile tsa bonoa ho sebelisoa HP4155B semiconductor parameter analyzer. Joaloka khatello ea motlakase, 10-millisecond pulsed current ea 212.5 A / cm2 e ile ea hlahisoa ka lihora tsa 2 ka makhetlo a 10 pulses / sec. Ha re khetha sekhahla se tlase kapa khafetsa, ha rea ka ra bona katoloso ea 1SSF esita le ka har'a diode ea PiN ntle le ente ea proton. Nakong ea motlakase o sebelisoang, mocheso oa PiN diode o pota-potile 70 ° C ntle le ho futhumatsa ka boomo, joalokaha ho bontšoa ho Setšoantšo sa S8. Litšoantšo tsa electroluminescent li ile tsa fumanoa pele le ka mor'a khatello ea motlakase ka bongata ba hona joale ba 25 A / cm2. Synchrotron reflection dlong incidence X-ray topography using monochromatic X-ray beam (λ = 0.15 nm) ho Aichi Synchrotron Radiation Center, ag vector in BL8S2 ke -1-128 kapa 11-28 (sheba ref. 44 bakeng sa lintlha tse ling) . ).
Maqhubu a motlakase ka sekhahla sa pele sa 2.5 A / cm2 se ntšoa ka nako ea 0.5 V ho feiga. 2 ho latela CVC ea boemo bo bong le bo bong ba diode ea PiN. Ho tsoa ho boleng bo tloaelehileng ba Vave ea khatello ea maikutlo le ho kheloha ho tloaelehileng σ ea khatello ea maikutlo, re rera lekhalo le tloaelehileng la kabo ka mokhoa oa mola o nang le matheba setšoantšong sa 2 re sebelisa equation e latelang:
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Nako ea poso: Nov-06-2022
