Waad ku mahadsantahay booqashada Dabeecadda. Nooca biraawsarka ah ee aad isticmaaleyso ayaa xaddidan taageerada CSS. Khibradda ugu fiican, waxaan kugula talineynaa inaad isticmaasho biraawsar cusub oo la cusbooneysiiyay (ama curyaaminta habka is-waafajinta ee Internet Explorer). Waqtigan xaadirka ah, si loo hubiyo in la sii wado sii wadista, waxaan ku bixin doonnaa goobta aan lahayn qaabab iyo javascript.
4H-SIC waxay ganacsi u ahayd sidii aalad loogu talagalay aaladda Semiconductor Semiconductor Semiconductor. Si kastaba ha noqotee, isku halaynta muddada-dheer ee aaladaha 4-aad-sic ayaa caqabad ku ah dalabkooda ballaaran, iyo dhibaatada kalsoonida ugu muhiimsan ee aaladaha 4h-Si candshanta ah waa hal abuurka. Nacaybkan waxaa sababa hal cilad oo cilad ah (1SSF) faafinta Diyaaradaha Diyaaradda Aagga Aasaal ee 3h-sic. Halkan, waxaan soo jeedinaynaa hab lagu xakameeyo daawooyinka 1SSF ee anigoo ka dhigaya protons on the 4h-Sic -xial Eishiaxial. Diodes pin oo lagu been abuurtay wafers leh mujtamacyo protone ah ayaa muujisay astaamaha isku midka ah ee korantada sida diodka aan la isticmaalin. Taas bedelkeeda, ballaarinta 1SSF ayaa si wax ku ool ah loo xakameynayaa pinton-pint-pingida pin-ga leh. Sidaa darteed, mushaarka loo yaqaan 'protons's) galay 4h-Sic Eitaxial Wafers waa hab wax ku ool ah oo lagu xakameeyo aaladda laba-cirifka ah ee aaladda 4h-sic ee sermionuctor-ka' Semiconductor 'intaad sii wadna waxqabadka aaladda. Natiijadan tani waxay gacan ka geysaneysaa horumarinta aaladaha 4h-mic ee aadka loo isku halleyn karo.
Silicon Carbide (Sic) waxaa si weyn loogu aqoonsaday inuu yahay shay semiconductor awood sare, aalado sare-u-soo noqnoqda Semiconductor oo ka shaqeyn kara jawiga adag1. Waxaa jira Moreytpes badan oo Sic ah, oo 4-aad SIC ay leedahay aalad aad u wanaagsan oo ah astaamaha jirka ee Semiconductor sida dhaqdhaqaaqa korantada oo sarreeya iyo burburka korantada korantada2. 4H-sic wafers oo dhexroor ah oo leh 6 inji ayaa hadda ganacsi ah oo loo adeegsadaa wax soo saarka ballaaran ee aaladda semiconductor power Semiconductor. ". Nidaamyada hurdada ee gawaarida korantada iyo tareenada waxaa lagu been abuurtay iyadoo la adeegsanayo 4h-Sic4.5 Aaladda Power Semonductor. Si kastaba ha noqotee, aaladaha 4-aad-sic ayaa wali la il daran arrimaha isku halaynta muddada-dheer sida burburka Dielectric-ka ama ku-hakinimada-gaaban, oo ah 6,7 ka mid ah arrimaha ugu muhiimsan ee isku haleeya uu yahay laba-cirifoodka ugu muhiimsan ee laba-sano-nololeedka ah ,,8,9,10,10. Hal-xaraashkan laba-sano-xumada waxaa la helay in ka badan 20 sano ka hor oo muddo dheer dhibaato ku qabay xaraashka aaladda Sic.
Laba-ciranka laba-cirifoodka waxaa sababa hal shockley ah oo ah cillad Shockley Sidaa darteed, haddii ballaarinta BPD ay xakameyso 1SSF, aaladaha awoodda 4h-sic waxaa lagu been abuuri karaa iyada oo aan la isticmaalin laba-cibir-cidka. Dhowr habab ayaa loo soo sheegay inay xakameeyaan faafinta BPD, sida BPD si loo kala qaybiyo geeska (TED) isbadal 20,21,22,22,23,24. Marka laga hadlayo wafers-kii ugu dambeeyay ee Sic-ka ah, BPD-ka ayaa inta badan ku jira substrate oo aan ku jirin lakabka eciaxial oo aan ku jirin beddelka bpd ee loo beddelay inta lagu gudajiro marxaladda bilowga ah ee kobaca bilowga ah. Sidaa darteed, dhibaatada harsan ee xasaasiyadda laba-cibaadada ayaa ah qaybinta BPD ee substrate 25,26,27. Galitaanka lakabka "uruurinta lakabka" inta udhaxeysa lakabka daadinta iyo suntaas waxaa loo soo jeediyay in lagu xakameeyo balanta BPD ee ku-meel-gaarka ah ee 'Elept' oo ay ku kiciso itimaalka lakabka elecibta-godka ah iyo substrate-ka. Yaraynta tirada lammaanaha gorta-elekton-ka ah waxay yareysaa xoogga wadida dib-u-dhiska ee BPD ee BPD-ka BPD-ga ee Substrate, sidaa darteed lakabka xoojinta ee unugyada xakamaynta ayaa xakameyn kara nabaad-abuurka. Waa in la ogaadaa in galinta lakabku uu yahay kharashyo dheeri ah oo ku saabsan soosaarka wafers, iyo iyada oo aan la dhigin lakab ay adag tahay in la yareeyo tirada lammaane elekton-ka ah iyadoo la xakameynayo kaliya xakameynta side oo dhan oo uurka leh. Sidaa darteed, wali waxaa jira baahi weyn oo loo qabo in la sameeyo habab kale oo xakameyn ah oo lagu gaaro isu-dheellitir wanaagsan oo u dhexeeya qiimaha wax soo saarka aaladda iyo dhalidda.
Sababta oo ah kordhinta BPD-ga ee 1SSF waxay u baahan tahay dhaqdhaqaaqa kala-goynta qayb ahaan (PDS), PONSINNA FADRA PD waa hab ku habboon oo lagu xannaaneeyo miisaska. In kasta oo pd punining by wasakhda birta ah ee la soo sheegay, FPD-ka 4h-SIC Substrates waxay ku yaalliin masaafad ka badan 5 μm oo ka soo baxa dusha sare ee lakabka. Intaas waxaa sii dheer, maadaama ay tahay isku-darka kala-sooca ee bir kasta oo ku yaal SIC aad u yar, way ku adag tahay ciladaha birta si loo kala saaro hoosaadka34. Sababo la xiriira tirada atomiga ah ee birta ah ee birta ah, iON ka dhigista macdanta birta sidoo kale way adagtahay. Taas bedelkeeda, haddii ay dhacdo hydrogen-ka, sheyga ugu fudud, ions (ilmada) waxaa lagu dhex ridi karaa 4h-mic ilaa in ka badan 10 μM iyadoo la adeegsanayo xawaaraha fasalka MEV-ga. Sidaa darteed, haddii mudaaharaad proton ay saameyn ku yeelato pd pinning, ka dib waxaa loo isticmaali karaa in lagu xakameeyo faafinta BPD ee substrate. Si kastaba ha noqotee, isweydaarsiga proton wuxuu dhaawici karaa 4h-mic wuxuuna ka dhalan karaa waxqabadka aaladda hoos udhaca 37,38,39,39,40.
Si looga gudbo nabaad-guurka aaladda sababta oo ah murgacashada proton, qarixitaan sare ayaa loo isticmaalaa in lagu hagaajiyo waxyeelada, oo ay suurtogal u tahay in sicir-bararka saqafka sare ee ator-ka, sababtuna tahay kaliya cufnaanta atom-ka-biyoodka oo keliya ee u dhow FD kuma filna ogaadaan pinning-ka PR adoo adeegsanaya Sims. Sidaa darteed, daraasaddan, waxaan ku dhexjilnaa buugano 4h-Sic-Sic -Xiil wafers ka hor hawsha been-abuurka, oo ay kujirto heerkul aad u sarreeya. Waxaan u adeegsanay diodes pin-ka ah ee qaab dhismeedka tijaabada ah oo ku been abuurtay Boroton-proton-proton-secut-ka-buugga '' cisciaxial '. Waxaan markaa u aragnay astaamaha veroject-ampire si aan u barto nabaad-guurka waxqabadka aaladda sababtoo ah cirbadda bogagga. Intaa ka dib, waxaan u aragnay fidinta 1SSF ee sawirrada elektaroonigga ah (El) sawirada ka dib markii aan ku dabaqayo korantada korantada ee loo yaqaan 'pin diode'. Ugu dambeyntiina, waxaan xaqiijinay saameynta cirbadda bogagga ee xakamaynta ballaarinta 1SSF.
Sawirka. Jaantus 1 wuxuu muujinayaa astaamaha-hadalka-hadalka (CVCs) ee diodes pin diodes ee heerkulka qolka ee gobollada leh iyo iyada oo aan lahayn proton mushjidhada ka hor intaan la garaacin. Dionis Pin oo leh cirbad cirbad godad muuji astaamaha sixitaanka ee la mid ah diodes oo aan lahayn cirbado boholo ah, in kasta oo astaamaha IV ay wadaagaan inta udhaxeysa diodes. Si loo muujiyo farqiga u dhexeeya xaaladaha duritaanka, waxaan ku qorneynaynaa soo noqnoqoshada korantada ee cufnaanta hore ee 2.5 a / cm2 (oo u dhigma 100 mA) oo ah jaantusyada tirakoobka sida muuqaalka qalooca sida qaybinta caadiga ah waxaa sidoo kale matalaya khadka tooska ah. safka. Sida lagu arki karo meelaha ugu sarreeya ee qalooca, ka caabbinta waxyar ayaa kor u kacaya qiyaasta borotoga ah ee 1014 iyo 1016 cm-2, halka pin-2, halka pin-2 ay muujineyso isku-darka isku mid ah oo isku mid ah sida aan laheyn astaamo ka kooban. We also performed proton implantation after fabrication of PiN diodes that did not exhibit uniform electroluminescence due to damage caused by proton implantation as shown in Figure S1 as described in previous studies37,38,39. Sidaa darteed, dunida laga qarinaayo 1600 ° C ka dib markii mushaaraadka al-imbar uu yahay geedi socod lagama maarmaan u ah aaladaha loo yaqaan 'overtic aaladda' ', oo hagaajin kara waxyeelada murgacasho ee ka dhisan iskumid ah ee u dhexeeya dinadaha pinton-ka ee aan la curyaamiyey. Inta jeer ee soo noqnoqda ee -5 v waxaa sidoo kale lagu soo bandhigaa Jaantuska S2, ma jiro farqi weyn oo u dhexeeya diodies oo leh cirbado la'aan.
Astaamaha Ampol-ampire ee loo yaqaan 'pin diodes' oo aan lahayn ilaaliyeyaal lagu duro heerkulka qolka. Legendy wuxuu muujiyaa qiyaasta protons.
Soo noqnoqoshada korantada ee tooska ah ee tooska ah 2.5 a / cm2 ee loo yaqaan 'pin diodes' oo leh ilaaliyeyaal la isku duro iyo kuwa aan la isku duri karin. Xariiqda dhibcaha waxay u dhigantaa qaybinta caadiga ah.
Sawirka. 3 waxay muujineysaa muuqaalka el ee pin diode oo cufnaanta hadda jirta ee 25 a / cm2 ka dib korantada. Kahor intaadan adeegsan culeyska hadda jira, gobollada mugdiga ah ee Diode-ka lama arkin, sida ka muuqata Jaantuska 3. C2. C2. Si kastaba ha noqotee, sida lagu muujiyey Jaantuska. 3a, oo ku dhex jira diode-ka pin oo aan laheyn kaalin dheeri ah, dhowr gobol oo mugdi ah oo mugdi ah oo leh geesaha iftiinka ayaa la arkay ka dib marka la isticmaalo koronto koronto. Gobollada mugdiga ah ee looxyada leh ee loo yaqaan 'up-udgoon' ayaa lagu arkay sawirada EL ee 1SSF fidinta BPD ee BPD-ga ee Substrate28,29. Taabadalkeed, qaar ka mid ah ciladaha xirxiran ayaa lagu arkay diodes pin leh oo leh patns oo la shubay, sida ku cad Jaantuska 3B-D. Isticmaalka sawirka raajada, waxaan xaqiijinay jiritaanka PRs oo ka soo dhaqaaqi kara BPD-ka si ay u soo bandhigaan duritaanka dusha sare (Sawirkan, fig. 4 4 4 b b pin image b b pind pind subsd subs subs in.. Doers waxaa lagu muujiyey Jaantusyada 1 iyo 2. Fiidiyowyo S3-S6 ah oo aan lahayn meelaha mugdiga ah ee la dheereeyey
Sawirrada El ee diodimadaha PIN ee 25 A / cm2 ka dib 2 saacadood ka dib walaaca fekerka (a) Iyadoo aan la micno la micno ah oo la-istcimaalo (B) 1012 cm-2, (c) 1014 cm-2 iyo (d) 1016 cm-2.
Waxaan u xisaabinay cufnaanta ee 1SSF anigoo xisaabinaya meelaha mugdiga ah ee saqafka dhalaalaya ee xaal kasta, sida ka muuqata tirada 1012 cm-2, cufnaanta la ballaariyey ee 1SSSF aad ayuu uga hooseeyaa pin pin-gude.
Kordhinta cufnaanta ee SF Pin Dionis oo aan lahayn oo aan lahayn proton-ka ka dib markii lagu ridayaa hadda la jeexjeexay hadda (gobol kasta waxaa ka mid ahaa saddex qalliin oo xamuul ah).
Soo gaabinta side side oo dhan waxay saameyn ku yeelanaysaa xakamaynta ballaarinta, iyo duriinka proton waxay yareysaa side-ka-qaadista side oo ah 42,36. Waxaan ku aragnay muddada side waqtiyada lakabka dhalmada ah 60 μm qaro weyn oo leh protons la isku duro oo ah 1014 cm-2. Laga soo bilaabo muxuumiga hore ee loo yaqaan 'Home The Livement', in kasta oo maqaar-galaha uu yareeyo qiimaha illaa ~ 10%, xarigga xigta ee lagu soo celinayo ~ 50%, sida lagu muujiyey Jaantuska S7. Sidaa darteed, side oo dhan, oo yaraaday sababtuna tahay samaynta proton-ka, waxaa dib loo soo celiyaa heerkul aad u sarreeya. In kasta oo 50% dhimista side ee nolosha uu sidoo kale xakameeyo faafinta ciladaha xirmooyinka, astaamaha I-V, oo sida caadiga ah ku tiirsan nolosha side, oo muujinaya kala duwanaansho yar oo u dhexeeya diode-ka la isku duro iyo kuwa aan la shubi karin. Sidaa daraadeed, waxaan aaminsanahay in xarkaha PD uu door ku leeyahay inuu joojiyo daasaarka 1SSF.
In kasta oo Sims uusan ogayn Hydrogen ka dib markii ay ka go'day 1600 ° C, sida lagu soo sheegay daraasadihii hore, sida ku xusan PD-yada ka hooseeya xadka ogaanshaha ee SIMS (2 × 1016 cm-3) ama line-ka maqaar-gale. Waa in la ogaadaa in aanan xaqiijinno kororka ka soo kordha daafaha ka caabiga ah sababtuna tahay xudunta 1SSF ka dib culeyska hadda jira. Tan waxaa laga yaabaa inay sabab u tahay xiriirinta aan caadiga ahayn ee OHMIC ee la sameeyay iyadoo la adeegsanayo howlaheena, kaas oo laga takhalusi doono mustaqbalka dhow.
Gabagabadii, waxaan horumarinay hab lama-firidhsan oo aan ku fidsanno BPD illaa 1SSF ee 4h-Sic Pin Diodes iyadoo la adeegsanayo mushaarka proton kahor aaladda aaladda. Naqshadeynta astaamaha I-v inta lagu gudajiro mudada difaaca ayaa ah wax aan qiimo lahayn, gaar ahaan qaddarka bogagga ee 1012 cm-2, laakiin saamaynta xakamaynta ballaarinta 1SSF waa mid muhiim ah. In kasta oo daraasaddan ah waxaan ku been abuurnay 10 μm diodes oo qadhaadh ah oo leh pin gin ah oo ah 10 μm, wali waa suurtogal in la sii wado xaaladaha maqaar-galaha oo ay ku dabaqeeyaan noocyada kale ee aaladaha 4h-mic. Kharashaad dheeri ah oo loogu talagalay hindisada aaladda inta lagu jiro mudada proton waa in la qaddariyo, laakiin waxay la mid noqon doonaan kuwa loo yaqaan 'aluminium ion murgacashada aluminiumka', oo ah habka ugu weyn ee qalabka qashinka ee 4h-sic. Sidaa darteed, murgacashada proton ka hor howsha aaladda ayaa ah hab suurtagal ah oo lagu been abuuro qalabka 4h-sic laba-sigis ah oo aan lahayn deganaansho la'aan.
4-inch N-Nooca 4h-SIC-sIC leh dhumuc qafiif ah oo ah 10 μm iyo uruurinta tabaruca deeqda ee 1 × 1016 cm-3 waxaa loo isticmaalay tusaale ahaan. Ka hor inta lagu gudajiro aaladda, ion waxaa lagu galiyay saxanka tamar dardargelinta ee 0.95 mess heerkulka qolka si qoto dheer oo qoto dheer oo ah illaa 10 μm xagal caadi ah ilaa dusha sare ee saxanka. Inta lagu jiro mudada baaritaanka, maaskaro saaran saxan saxan ayaa la isticmaalay, oo saxanku wuxuu lahaa qaybo ka baxsan iyo qiyaasta borotoniga ah ee 1012, 1014, ama 1016 cm-2. Kadib, Al imbar oo leh qiyaaso borotos ah oo ah 1020 iyo 1017 cm-3 waxaa lagu dhex riday weerarka oo dhan illaa 0-0.2 °.5 ° C si aad u sameysato daboolka kaarboon ee loo yaqaan 'kaarboon'. -type. Intaa ka dib, taabashada dhinaca dambe ee kooxda ayaa lagu shubay dhinaca substrate, halka 2.0 mm × +0 mm "taagnat-al-al-alxal ah oo ay sameysay Photolitroprography iyo geeddi-socod ayaa lagu shubay dhinaca-dhirta lakabka. Ugu dambeyntiina, la xiriir qariska waxaa lagu fuliyaa heerkul ah 700 ° C. Ka dib markii la jaro wafer-ka si ay u kala baxaan, waxaan qabannay astaamaha walaaca iyo arjiga.
Astaamaha I-V ee ah Diodes Pin ee been-abuurka ah ayaa la arkay iyadoo la adeegsanayo 'HP4155B Semiconductor' ee Falanqeeyaha. Sida walbahaarka korantada, oo ah 10-mindiecod-ka ayaa lagu gartaa hadda 212.5 A / CM2 waxaa la soo bandhigay 2 saacadood inta jeer ee 10 puls / sek. Markii aan door bidnay cufnaanta hoose ee hadda jirta ama soo noqnoqon, ma aanu ku eegin daawooyinka 1SSF xitaa xitaa diode pin oo aan lahayn cirbad boroton ah. Intii lagu gudajiray korantada korantada ee lagu dabaqayo, heerkulka pin doode waa qiyaastii 70 ° C iyada oo aan lahayn kuleyl ula kac ah, sida ku cad Jaantuska S8. Sawirro elektaroonig ah ayaa la helay ka hor iyo ka dib walaaca korantada ee cufnaanta hadda jirta ee 25 a / cm2. Cilladaha dib-u-eegista ee ciribtirka-jajabka kor-u-soo-jeedinta mashiinka raajo (λ = 0.15 nm) Xarunta shucaaca ee AICHI Synchrotron, ee Vector Synchroton, waa -1-128 ama 11-28 (eeg Ref. 44 faahfaahinta). ).
Soo noqnoqda korantada ee cufnaanta hore ee hore ee 2.5 a / cm2 waxaa lagu soosaaray muddo u dhexeysa 0.5 v Jaantuska. 2 Sida laga soo xigtay CVC-ga gobol kasta oo ah PIN Diode. Laga soo bilaabo qiimaha celceliska ah ee carrabka carrabka iyo jahwareerka caadiga ah σ culayska, waxaan qorsheyneynaa qalooca qaybinta caadiga ah ee qaab sadarka dhibcaha ah ee sawirka 2 adeegsanaya isla'egta soo socda:
Werner, Mr & Fahrner, PR Dib u eegis ku saabsan agabyada, microsennars, nidaamyada iyo aaladaha loogu talagalay codsiyada heerkulka-heerkulka iyo jawiga jawiga adag. Werner, Mr & Fahrner, PR Dib u eegis ku saabsan agabyada, microsennars, nidaamyada iyo aaladaha loogu talagalay codsiyada heerkulka-heerkulka iyo jawiga jawiga adag.Werner, Mr iyo Freed, Dro Dulqaadka Qalabka, Microsennators, Nidaamyada iyo Qalabka loogu talagalay codsiyada heerkulka sare iyo deegaannada adag. Werner, Mr & Fahrner, wr 对用于高温和恶劣环境应用 的 材料, 系统和设备, 系统和设备 的 评论. Werner, Mr & Fahrner, WR Dib u eegista agabyada, mihoobay, nidaamyada iyo aaladaha loogu talagalay aaladaha heerkulka sare iyo codsiyada deegaanka ee xun.Werner, Mr iyo Tar, Tartan, Dro Dulqaadka Qalabka, Microsennas, Nidaamyada iyo Qalabka codsiyada heerkulka sare iyo xaaladaha adag.Ieee trans. Qalabka elektiroonigga ah ee warshadaha. 48, 249-257 (2001).
Kimoto, T. & Cooper, Aasaaska JA ee aasaaska tikniyoolajiyadda tikniyoolajiyadda Silicon Carbide ee tikniyoolajiyadda Silicon Carbide: koritaanka, astaamaha, aaladaha iyo codsiyada vol. Kimoto, T. & Cooper, Aasaaska JA ee aasaaska tikniyoolajiyadda tikniyoolajiyadda Silicon Carbide ee tikniyoolajiyadda Silicon Carbide: koritaanka, astaamaha, aaladaha iyo codsiyada vol.Kimoto, T. Iyo Coonaler, Aasaaska JOS ee aasaaska tikniyoolajiyadda silicon Carbide ee tikniyoolajiyadda Silicon Carbide: koritaanka, astaamaha, aaladaha iyo codsiyada vol. Kimoto, T. & Cooper, ja 碳化硅技术基础碳化硅技术基础: 增长, 表征, 设备和应用卷. Kimoto, T. & Cooper, JA kaarboon 化 Silicon Saldhig salboon Karbon 化 Saldhigga tikniyoolajiyada Silikon Saldhiga Teknologs Saldhigga Teknolog ee Silikon Saldhigga: Qeexitaanka, qalabka iyo mugga iyo mugga.Kimoto, T. iyo Cooper, J. Aasaaska aasaaska tikniyoolajiyada tikniyoolajiyadda Silicon Carbide ee tikniyoolajiyadda Silicon Carbide: koritaanka, astaamaha, qalabka iyo codsiyada vol.252 (Wiley Singapore PTE Ltd, 2014).
Veliadis, V. Ganacsi ballaaran oo loo yaqaan 'SICCRIANCE' ee Sic: Xaaladda Quo iyo caqabadaha laga adkaado. Alma Mater. sayniska. Madal 1062, 125-130 (2022).
Aamusnaamo, J., Smet, V., Tumblala, RR & Joshi, Enciol Dib u eegista Technolojiyadda Xirmooyinka kuleylka ee tamarta ku-meel-gaarka ah ee loo yaqaan 'thiklerotics'. Aamusnaamo, J., Smet, V., Tumblala, RR & Joshi, Enciol Dib u eegista Technolojiyadda Xirmooyinka kuleylka ee tamarta ku-meel-gaarka ah ee loo yaqaan 'thiklerotics'.Aabaha, J., Smet, V., Tumbla, RR iyo JoshI, Dulmarka YK ee teknolojiyadda xirmooyinka kuleylka ee loo yaqaan 'thiktorojiinka tamarta' traing thructors '. Aamusnaa, J., Smet, V., Tumbla, RR & Joshi, Yk 用于牵引目 的 回顾. Aabaha, J., Smet, V., Tumbla, RR & Josh, YkAamusnaa, J., Smet, V., Tumbla, RR iyo Josh, Dulmarka YK ee tikniyoolajiyad ku saabsan tamarta kuleylka ah ee loo yaqaan 'the thytronic'.J. Elektaroonigga. Xirmo. riyada. Asme 140, 1-11 (2018).
SATO, K., Kato, H. & Fukushima, T. T. Horumarinta SIC ee loo adeegsado Nidaamka Turnishing Jeelka xiga ee xawaaraha xawaaraha sare ee Shininnsen. SATO, K., Kato, H. & Fukushima, T. T. Horumarinta SIC ee loo adeegsado Nidaamka Turnishing Jeelka xiga ee xawaaraha xawaaraha sare ee Shininnsen.SATO K., Kato H. Iyo Fukushima T. Horumarinta Nidaamka Wareejinta SIC ee lagu dabaqi karo ee jiilka xiga ee jihada xawaaraha sare ee xawaaraha sare.SATO K., Kato H. iyo Fukushima T. Nidaamka Nidaamka Horumarinta ee Codsiyada Sic ee Resces-ka soo socda Tareenada xawaaraha sare ee xawaaraha sare. Lifaaqa IEEDAJ J. Ind-Inf. 9, 453-459 (2020).
Senzaki, J., Hayasha, Hayashi, YononOnezawa, Y. & Okumura, H. Caqabadaha ayaa lagu caqabtiraa aaladaha korantada sicirka si aad ah loo aamini karo: xaalada hadda jirta iyo arrimaha Sic-ka-cod-baxa. Senzaki, J., Hayasha, Hayashi, YononOnezawa, Y. & Okumura, H. Caqabadaha ayaa lagu caqabtiraa aaladaha korantada sicirka si aad ah loo aamini karo: xaalada hadda jirta iyo arrimaha Sic-ka-cod-baxa.Senzaki, J., Hayasha, Hayashi, Yononezawa, Y. Iyo Okumura, H. Dhibaatooyinka fulinta aaladda korantada sicirka ee aadka loo isku halleyn karo: laga bilaabo gobolka hadda jira iyo dhibaatada Waarfer-ka. Senzaki, J., Hayasha, S., Yonnezawa, Y. & Okumura, H. 实现高可靠性 Sic 功率器件 的 挑战: 从 Sic 晶圆 晶圆 的 现状和问题来看: Senzaki, J., Hayasha, S., Yonnezawa, Y. & Okumura, H. Caqabadda lagu gaarayo isku haleedka sare ee aaladda korantada ee Sic: ee Sic 晶圆 晶圆 的 电视和问题设计.Senzaki j, Hayashi s, Yonnezawa y. Iyo Yonezawa y. Iyo Okumura H. Caqabadaha H. Caqabadaha H. Caqabadaha H.Xisaabta caalamiga ah ee 2018 ee 2018 ieee (Senzaki, J. et al. Eds.) 3b.3-1-3b.3-6 (Ieee, 2018).
Kim, D. & Sung, W. Hagaajinta wareejinta wareegga-gaagaaban ee 1.2kv 4h-Sic Mosfet oo adeegsanaya P-si fiican u hirgeliya p-sifiican murgacashada. Kim, D. & Sung, W. Hagaajinta wareejinta wareegga-gaagaaban ee 1.2kv 4h-Sic Mosfet oo adeegsanaya P-si fiican u hirgeliya p-sifiican murgacashada.Kim, D. iyo Sung, V. Hagaajinta xasaanadda wareegga-gaaban ee loo yaqaan '1.2-Sic' Mosfet 'oo ah 1.2-SIc Mosfeet oo adeegsanaya P-si fiican u hirgaliya PneNat. Kim, D. & SUBG, W. 使用通过沟道注入实现 的 的 深 p 阱提高了 1.2kv 4h-Sic Mosfet 的 短路耐用性. Kim, D. & SUBG, W. P 阱提高了 1.2KV 4h-Sic MosfetKim, D. iyo Sung, V. Hagaajinta dulqaad-gaagaaban oo gaagaaban oo ah 1.2 KV 4h-Sic Mostlets oo loo adeegsado P-ceels-ka qoto dheer ee ka-hortagga kanaalka.Qalabka elektiroonigga ah ee IEEE ayaa dufan. 42, 1822-1825 (2021).
Skowronski M. et al. Dib-u-kicinta dhaqdhaqaaqa ciladaha ee ciladaha hore ee loosiiyay 4h-Sic Pn Diodes. J. Codsiga. Fiisigiska. 92, 4699-4704 (2002).
Ha, S. S., Manieszkowski, P., Skowronski, M. & Rowland, Beddelka Kala-guurka LB ee 4h Silicon Carbide Eisbidexy. Ha, S. S., Manieszkowski, P., Skowronski, M. & Rowland, Beddelka Kala-guurka LB ee 4h Silicon Carbide Eisbidexy.Ha,. Ha, S., Maesszkowski, P., Skowronski, M. & Rowland, L. 4H 碳化硅外延中 的 位错转换. Ha, S., Manieszkkowski, P., Skowronski, M. & Rowland, L. 4H Ha, S., Meszkowski, P., Skowronski, M. & Rowland, LBKa-guurista kala-guurka 4H ee Silicon Carbide Chanbide.J. Crystal. Koritaanka 244, 257-266 (2002).
Skowronski, M. & ha, S. Natication of heARagoncal silicon-carbide-carbide-carbide-carbide-aaladda bipolar. Skowronski, M. & ha, S. Natication of heARagoncal silicon-carbide-carbide-carbide-carbide-aaladda bipolar.Skowronski M. Iyo Ha S. Nationsation of aaladda hexagonal bipolar aaladda ku saleysan silicon carbide. Skowronski, M. & Ha, S. 的 降解. Skowronski M. & Ha S.Skowronski M. Iyo Ha S. Nationsation of aaladda hexagonal bipolar aaladda ku saleysan silicon carbide.J. Codsiga. Fiisigiska 99, 011101 (2006).
Agarwal, A., Fatima, H., H. H. S. & Ryu, S.-h. Agarwal, A., Fatima, H., H. H. S. & Ryu, S.-h.Agarwal A., Faaduma H., Heini S. iyo Ryu S.-h. Agarwal, A., Fatima, H., H. H. S. & Ryu, S.-h. Agarwal, A., Fatima, H., H. H. S. & Ryu, S.-h.Agarwal A., Faaduma H., Heini S. iyo Ryu S.-h.Farshaxanaanta sharafta cusub ee loogu talagalay korantada-sare ee korantada ee korantada ee 'Vattage' Mostostos Mostos Mostos Mostoss. Qalabka elektiroonigga ah ee IEEE ayaa dufan. 28, 587-589 (2007).
Caldwell, JD, Stahlbush, R, Aill, Mg, GLEMBOCHI, OJ & Hobart, KD oo ku saabsan dadaalka wadista cilad-ahaanta 4h-mict. Caldwell, JD, Stahlbush, R, Aill, Mg, GLEMBOCHI, OJ & Hobart, KD oo ku saabsan dadaalka wadista cilad-ahaanta 4h-mict.Caldwell, JD, Stalbush, RE, MG, MG, GLEMBO, OJ, iyo Hobarrt, KD oo ku saabsan dadarka qaladka ee 4h-mict. Caldwell, JD, Stahlbush, R, Aill, Mg, Glembco, OJ & Hobart, KD-Mict 关于 4, 层错运动 的. Caldwell, JD, Stahlbush, R, Aill, Mg, Glembros, OJ & Hobart, KDCaldwell, JD, Stalbush, RE, Ancona, MG, Glemboki, OJ, and Hobart, KD, On the driving force of recombination-induced stacking fault motion in 4H-SiC.J. Codsiga. Fiisigiska. 108, 044503 (2010).
IIJIMA, A. & Kimoto, T. Model Elektaroonig elektiroonig ah oo loogu talagalay Shockley Shockley Schoration-ka oo ku dhejinaya dhismaha ciladaha ee 3h-sic. IIJIMA, A. & Kimoto, T. Model Elektaroonig elektiroonig ah oo loogu talagalay Shockley Shockley Schoration-ka oo ku dhejinaya dhismaha ciladaha ee 3h-sic.IIJIMA, A. Iyo Kimoto, T. Moodh elektaroonig ah oo elektiroonig ah oo ku saabsan abuurista hal cilado oo ka mid ah xirmooyinka Shockley IIJIMA, A. & Kimoto, T. 4H-Sic 晶体中单 Shockley 堆垛层错形成 Shockley 堆垛层错形成 的 电子能量模型. IIJIMA, A. & Kimoto, T. Model Elektaroonig elektiroonig ah oo ah shockley Shockley ku dhejisa qaab dhismeedka ciladaha ee 4h-Sic Crystal.IIJIMA, A. Iyo Kimoto, T. Moodh elektaroonig ah oo elektaroonig ah oo ah qaab dhismeedka cilladaha hal-ka-qaabaynta shockleyJ. Codsiga. Fiisigiska 126, 105703 (2019).
IIJIMA, A. & Kimoto, T. Qiyaasta xaalada halista ah ee ballaarinta / foosha ee ciladaha ciladaha ee ciladaha ee ciladaha ee 4h-Sic Pin diodes. IIJIMA, A. & Kimoto, T. Qiyaasta xaalada halista ah ee ballaarinta / foosha ee ciladaha ciladaha ee ciladaha ee ciladaha ee 4h-Sic Pin diodes.IIJIMA, A. Iyo Kimoto, Qiyaasta Dawladda Xasaasiga ah ee ballaarinta / is-dhexgalka ciladaha Shockley ee ciriiriga Shockley ee ciriiriga ah ee 4h-Sic Pin-diodes. IIJIMA, A. & Kimoto, T. 估计 4h-Sic Pin 二极管中单个 Shockley 堆垛层错膨胀 / 收缩 的. IIJIMA, A. & Kimoto, T. Qiyaasta hal Shockley Shockley oo xiraya xaaladaha ballaarinta lakabka / foosha ee lakabka oo ah 4h-Sic Pin Pin Diodes.IIJIMA, A. Iyo Kimoto, T. Qiyaasta xaaladaha xasaasiga ah ee ballaarinta / isku-dhafka ah ee cilladaha cilladaha ee Shock Shockley ee ku dhaca 4h-Siin pin-dida.Codsiyada fiisigiska. 116, 092105 (2020).
Mannen, Y., Shimada, ee, ASTANI, K. & Ohtani, N. Timeum Trade Moodel Shockley oo cilad ah oo cilad ah oo ku saabsan xaaladaha 4-aad-Sic-mict-ka. Mannen, Y., Shimada, ee, ASTANI, K. & Ohtani, N. Timeum Trade Moodel Shockley oo cilad ah oo cilad ah oo ku saabsan xaaladaha 4-aad-Sic-mict-ka.Mannen Y., Shimadaha k., ASIMA K., iyo Otani n. Moodeel si wanaagsan oo loogu talagalay sameynta hal cilad oo cilad ah oo cilad ah oo ka dhacday xaaladaha 4-aad ee cidhibbiribrium.Mannen Y., Shimadaha k., ASIMA K., iyo Otani N. Moodh si ka mid ah is dhexgalka bulshada ee samaynta ciladaha shoogley ee ciladaha shockley ee ku dhaca 3h-sigimribrium. J. Codsiga. Fiisigiska. 125, 085705 (2019).
Galaccels, A., Linnros, J. & Pirouz, PS. Pobouz, P. Dib u soocelinta ciladaha-dib-u-dhaca: caddeyn farsamo guud oo ku saabsan Hexanabyonal SIC. Galaccels, A., Linnros, J. & Pirouz, PS. Pobouz, P. Dib u soocelinta ciladaha-dib-u-dhaca: caddeyn farsamo guud oo ku saabsan Hexanabyonal SIC.Galacels, A., Linnros, J. Iyo Pirouz, P. Cilladaha xirxirayaasha-xirmada-xirmooyinka: caddeyn farsamo wadareed ee hexagonal Siis. Galaccels, A., Linnros, J. & Pirouz, P. 复合诱导 的 的 堆垛层错: 六方 Sic 中一般机制 中一般机制 的 证据. Galaccels, A. Linnros, J. & Pirouz, P. Caddi-caddeynta qaababka guud ee lakabka isku-dhafka ee lakabka: 六方 Sic.Galacels, A., Linnros, J. Iyo Pirouz, P. Cilladaha xirxirayaasha-xirmada-xirmooyinka: caddeyn farsamo wadareed ee hexagonal Siis.Passics Persic Wright. 96, 025502 (2006).
Ishikawa, Y., sudo, M., Yao, Yaao, Y.-Z.Ishikawa, Y., M. Sudo, y.-zamin-ka aan imaanin.Ishikawa, Y., Sudo M., Y.-Z Maskaxda.Sanduuqa, ю. м. Судо, y.-z., J., Jeel., 123, 225101 (2018).
Kato, M., Kataxira, S., Ickawa, Y., Hadawa, S. & Kimoto, T. T. Triching ee dib-u-soo-noolaynta khaladaadka side ee ciladaha oo keliya ee ciladaha oo ah cilado-qaade ah oo ka mid ah 4h-mict. Kato, M., Kataxira, S., Ickawa, Y., Hadawa, S. & Kimoto, T. T. Triching ee dib-u-soo-noolaynta khaladaadka side ee ciladaha oo keliya ee ciladaha oo ah cilado-qaade ah oo ka mid ah 4h-mict.Kato M., Katahira S., Itema S., Harada S. iyo Kimoto T. U fiirsashada side side side side side oo cilado ah oo ciriiri ah oo ciriiri ah iyo kala-goysyada qayb ahaan 4h-mict. Kato, M., Kataxira, S., Ichikawa, Y., Hada, S. & Kimoto, T. 单 Shockley 堆垛层错和 4h-Sic 部分位错中载流子复合 的 观察. Kato, M., Kataxira, S., Ichikawa, Y., Hadawa, S. & Kimoto, T. 单 Shockley Shock Shocking Schoping 和 4h-sig qayb ahaan 位错中载流子去生 的 可以.Kato M., Katahira S., Itema S., Harada S. iyo Kimoto T. U fiirsashada side side side side side oo cilado ah oo ciriiri ah oo ciriiri ah iyo kala-goysyada qayb ahaan 4h-mict.J. Codsiga. Fiisigiska 124, 095702 (2018).
Kimoto, T. & Watanabe, H. Cilladaha Cilladaha Injineerinka ee tikniyoolajiyadda Sic ee qalabka korantada ee korantada. Kimoto, T. & Watanabe, H. Cilladaha Cilladaha Injineerinka ee tikniyoolajiyadda Sic ee qalabka korantada ee korantada.Kimoto, T. iyo Watanabe, H. Horumarinta cilladaha ee tikniyoolajiyadda Sic ee qalabka korantada ee korantada. Kimoto, T. & Watanabe, H. 用于高压功率器件 用于高压功率器件 用于高压功率器件 的 的 缺陷工程. Kimoto, T. & Watanabe, H. Cilladaha Cilladaha Injineerinka ee tikniyoolajiyadda Sic ee qalabka korantada ee korantada.Kimoto, T. iyo Watanabe, H. Horumarinta cilladaha ee tikniyoolajiyadda Sic ee qalabka korantada ee korantada.Fiisigiska Codsiyada Codsiga 13, 120101 (2020).
Zhang, Z. & Waddarhan, Ts Basal Diyaaradda Kala-goynta-bilaashka ah ee-Bilaashka ah ee Silicon Carbide. Zhang, Z. & Waddarhan, Ts Basal Diyaaradda Kala-goynta-bilaashka ah ee-Bilaashka ah ee Silicon Carbide.Zhang z. iyo Sudanshan Ts kala-goynta-bilaashka ah ee-bilaashka ah ee silicon carbide ee diyaaradda basal. Zhang, z. & Wadidan, ts 碳化硅基面无位错外延. Zhang, z. & Waddarhan, tsZhang z. iyo Wadhun Ts kala-goynta-bilaa-goynta-bilaashka ah ee diyaaradaha silicon Carbide Casal.Bayaanka. Fiisigiska. Wright. 87, 151913 (2005).
Zhang, Z. Moulton, E. & Wadirhan, Habka loo yaqaan 'TS' oo ah ciribtirka ciribtirka diyaaradda basal ee filimyada khafiifka ah ee '' ' Zhang, Z. Moulton, E. & Wadirhan, Habka loo yaqaan 'TS' oo ah ciribtirka ciribtirka diyaaradda basal ee filimyada khafiifka ah ee '' 'Zhang Z., Moulton E. Iyo Sudaygton Ts Habka Tirtirka Diyaarinta Diyaarinta Diyaaradda Sasalada ee filimada khafiifka ah ee SIC ee ku khafiifiya filimka etchrax. Zhang, Z., Moulton, E. & Waditan, Ts 通过在蚀刻衬底上外延消除 Sic 薄膜中基面位错 薄膜中基面位错 的 机制. Zhang, Z. Moulton, E. & Waddarhan, Ts Habka ciribtirka filimka khafiifka ah ee fudud ee lagu ridayo substrate.Zhang Z., Moulton E. Iyo Wadada Sudan ee Tigs ee Tilmaamaha Ciyaariyada Diyaarinta Diyaarinta Diyaarinta ee filimada khafiifka ah ee SIC ee ku khafiifinta filimka '' 'Codsiyada fiisigiska. 89, 081910 (2006).
Shtalbush re et al. Joojinta kobaca ayaa horseedaysa hoos udhaca kala-goynta diyaaradda basal inta lagu gudajiro 4h-sic. Bayaanka. Fiisigiska. Wright. 94, 041916 (2009).
Zhang, X. & Tsuchida, H. Direct of diyaaradda basal-ka ee loo yaqaan 'Diyaaradda Basal' ee lagu dejinayo Xirmooyinka Cirvation Chrideces ee ku saabsan 4h-Sic Epileayers-ka oo heerkul sare ah. Zhang, X. & Tsuchida, H. Direct of diyaaradda basal-ka ee loo yaqaan 'Diyaaradda Basal' ee lagu dejinayo Xirmooyinka Cirvation Chrideces ee ku saabsan 4h-Sic Epileayers-ka oo heerkul sare ah.Zhang, X. iyo Tsuchida, H. Isbeddelka Diyaaradda Sasal wuxuu ku kala baxayaa khilaafaadka geeska ee lakabyada 4h-sic-ka-sicil ee heerkulka sare. Zhang, X. & Tsuchida, H. 通过高温退火将 4H-Sic 外延层中 的 基面位错转化为螺纹刃位错. Zhang, x. & tsuchida, h. 通过高温退火将 4h-micZhang, X. iyo Tsuchika, H. Isbeddelka Diyaarinta Diyaaradda Sasalada ah ee loo yaqaan 'Stanocotion Diyaaradaha Alaabada' Contrecotion 'ee lakabyada 4h-Sic -Xiil ee lakabyada ugu sarreeya.J. Codsiga. Fiisigiska. 111, 123512 (2012).
Hees, H. & Waddarhan, Beddelka Diyaarinta Diyaaradda Diyaaradda ee TS Aaldual ayaa u dhow Epilaaq / Isbarbardhiga Isbarbardhiga Hees, H. & Waddarhan, Beddelka Diyaarinta Diyaaradda Diyaaradda ee TS Aaldual ayaa u dhow Epilaaq / Isbarbardhiga IsbarbardhigaHees, H. Iyo Wadshhan, Isbeddelka TS ee Diyaaradda Aasaal waxay kudhacday meel u dhow muuqaalka lakabka / is-dhexgalka sunta ah inta lagu gudajiro kobaca-dhidibka ee 3h-mict. Heesta, H. & Wadidan, Ts 在 4 ° ° 4h-mic 外延生长中外延层 / 衬底界面附近 基底平面位错转换. Heesta, H. & Wadidan, Ts 在 4 ° ° 4h-mic Heesta, H. & Wadsar, TsKala-guurka dalxiis ee ku-meel-gaarka ah ee ku-meel-gaarka ah ee ku dhowaad lakabka 'ceilaxial lakabka / xadka substrate inta lagu jiro koritaanka dhalmada ee 4h-sic ee ka baxsan 4da ° dhidibka 4-aad.J. Crystal. Kobcinta 371, 94-101 (2013).
Konishi, K. et al. Attt ee hadda jirta, faafinta qaladka burburka diyaaradda ee diyaaradda ee basal ee 4h-sic-ka lakabyada 'sicil' ee loo beddelo isku-darka ciida. J. Codsiga. Fiisigiska. 114, 014504 (2013).
Konishi, K. et al. Naqshadeeyo lakabyada 'cispaxiolab' ee loo yaqaan 'bipolar' ah oo aan ciricin karin AIP waxay horumar sameysay 12, 035310 (2022).
Lin, s. et al. Saamaynta Qaab dhismeedka Diyaaradda Basal ee ku saabsan faafinta cilad kelideed ee qaladka ah ee cilad-noocyada ah inta lagu gudajiro suuska hadda jira ee 4h-Siin Pin Pin Diodes. Japan. J. Codsiga. Fiisigiska. 57, 04fr07 (2018).
Tahara, T. et al. Taariikhda yar ee yar yar ee ku taal qaab-dhismeedka qaniga ah ee nitrogen-ka ah 4h-Sic ee epileyers waxaa loo isticmaalaa in lagu xakameeyo ciladaha xargaha ee ku jira diodimadaha pin. J. Codsiga. Fiisigiska. 120, 115101 (2016).
Tahara, t. et al. Ku tiirsanaanta uruurinta xamuulka ee lagu duro oo ku tiirsanaanta hal shockley xidhmada ciladaha ee ciladaha ee 4h-sic pin pin diodes. J. Codsiga. Fiisigiska 123, 025707 (2018).
ME, S. T. T. T. T. T. T. TSUCHIDA, H. & Kato, M. Microscopic Nidaamka FCA-ga ee loo yaqaan 'Cabbirrada' POST-MONTR 'Cabbirka cimriga dheer ee sicirka. ME, S. T. T. T. T. T. T. TSUCHIDA, H. & Kato, M. Microscopic Nidaamka FCA-ga ee loo yaqaan 'Cabbirrada' POST-MONTR 'Cabbirka cimriga dheer ee sicirka.Mei, S. T. T. T. T. T. T. T. T. iyo Kato, M. Nidaamka FACA microscopic-ka si loo xalliyo cabbiraadaha nolosha ee silikoolka silicon carbide. Mae, S., Tawara, T., Tsuchida, H. & Kato, M. 用于 Sic 中深度分辨载流子寿命测量 中深度分辨载流子寿命测量 系统 系统. ME, S. T. T. T. T. T. T. T. T. TSUCHID, H. & Kato, M. ee Sic dhexdhexaad ah 分辨载流子 Cabbirka qoto dheer ee 分辨载流子 Cabbirada nolosha oo dhan 的 Nidaamka FCA-ga.Mei S., Tawara T., Tsuchika H. iyo Kato M. Nidaamka loo yaqaan 'Micro-FCA' ee loogu talagalay cabbiraadda qoto dheer ee xalka ah ee lagu xalliyo cabbiraadaha nolosha ee silicon carbide.Madasha Sayniska Alma Mater 924, 269-272 (2018).
Hirayama, T. et al. Qaybta qoto dheer ee xaddidaadda side ee loo yaqaan 'The The Tretimets' ee qaro weyn 4h-sic ah oo ah lakabyo qaro weyn leh 4h-sic U beddelo sayniska. mitirka. 91, 123902 (2020).
Waqtiga Post: Noven-06-2022
