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4H-SiC waxaa lagu ganaciyay sidii qalab loogu talagalay qalabka semiconductor-ka. Si kastaba ha ahaatee, isku halaynta muddada dheer ee qalabka 4H-SiC ayaa caqabad ku ah codsigooda ballaaran, iyo dhibaatada ugu muhiimsan ee isku halaynta qalabka 4H-SiC waa hoos u dhaca laba-cirifoodka. Burburintan waxaa keenay hal cillad oo Shockley stacking cillad (1SSF) oo ah faafitaanka diyaaradda asalka ah ee 4H-SiC crystals. Halkan, waxaan ku soo jeedineynaa hab lagu xakameynayo ballaarinta 1SSF anagoo ku dhejinaya protons 4H-SiC wafers epitaxial. Diodes-yada PiN ee lagu dhex-abuuray waferrada leh proton implantation waxay tuseen sifooyin koronto oo la mid ah sida diodh-yada aan lahayn proton implantation. Taas bedelkeeda, balaadhinta 1SSF si wax ku ool ah ayaa loo xakameeyay diodka PiN ee lagu beeray proton. Sidaa darteed, ku-galinta protons-ka 4H-SiC wafers epitaxial waa hab wax ku ool ah oo lagu xakameynayo xaalufka laba-cirifoodka ee 4H-SiC qalabka semiconductor iyadoo la ilaalinayo waxqabadka qalabka. Natiijadani waxay gacan ka geysataa horumarinta qalabka 4H-SiC ee aadka la isku halleyn karo.
Silicon carbide (SiC) waxaa si weyn loogu aqoonsan yahay walxo semiconductor ah oo loogu talagalay aaladaha awood sare, soo noqnoqda sare ee semiconductor kuwaas oo ka shaqeyn kara jawi adag1. Waxaa jira noocyo badan oo SiC ah, oo ay ka mid yihiin 4H-SiC waxay leedahay aaladda semiconductor aad u fiican sifooyin jireed sida dhaqdhaqaaqa elektarooniga sare iyo burburka xooggan ee beerta2. 4H-SiC wafers oo leh dhexroor 6 inji ah ayaa hadda la baayacmushtareeyaa waxaana loo isticmaalaa wax soo saarka ballaaran ee aaladaha korantada3. Nidaamyada jiidashada baabuurta korantada iyo tareenada ayaa la sameeyay iyadoo la adeegsanayo 4H-SiC4.5 aaladaha korantada ee semiconductor. Si kastaba ha ahaatee, aaladaha 4H-SiC ayaa weli la ildaran arrimaha la isku halleyn karo ee muddada-dheer sida burburka dielectric ama isku halaynta gaaban ee wareegga, 6,7 kuwaas oo mid ka mid ah arrimaha ugu muhiimsan ee lagu kalsoonaan karo ay tahay hoos u dhaca laba-cirifoodka2,8,9,10,11. Burburintan laba-cirifoodka ah ayaa la ogaaday 20 sano ka hor waxayna muddo dheer dhibaato ku ahayd samaynta aaladda SiC.
Burburinta laba-cirifoodka waxaa sababa hal cillad oo Shockley ah (1SSF) oo ku jirta 4H-SiC crystals oo leh kala-bax diyaaradeed (BPDs) iyada oo dib-u-habayn lagu xoojinayo qulqulka kala-baxa (REDG) 12,13,14,15,16,17,18,19. Sidaa darteed, haddii balaadhinta BPD la xakameeyo ilaa 1SSF, 4H-SiC aaladaha korantada waa la been-abuuri karaa iyada oo aan hoos loo dhigin laba-cirifoodka. Dhowr habab ayaa la soo sheegay si loo xakameeyo faafinta BPD, sida BPD ilaa Thread Edge Dislocation (TED) beddelka 20,21,22,23,24. Waferrada SiC epitaxial ee ugu dambeeyay, BPD waxay inta badan ku jirtaa substrate-ka oo aan ku jirin lakabka epitaxial sababtoo ah beddelka BPD ilaa TED inta lagu jiro marxaladda hore ee koritaanka epitaxial. Sidaa darteed, dhibaatada soo hartay ee hoos u dhaca laba-cirifoodka waa qaybinta BPD ee substrate-ka 25,26,27. Gelida "lakabka xoojinta isku dhafan" ee u dhexeeya lakabka qulqulaya iyo substrate-ka ayaa loo soo jeediyay hab wax ku ool ah oo lagu xakameynayo ballaarinta BPD ee substrate28, 29, 30, 31 lakabka epitaxial iyo substrate SiC. Yaraynta tirada lammaaneyaasha godad elektarooniga ah waxay yaraynaysaa awoodda wadista REDG ilaa BPD ee substrate-ka, markaa lakabka xoojinta isku dhafan wuxuu xakameyn karaa hoos u dhaca laba-cirifoodka. Waa in la ogaadaa in gelinta lakabka ay keenayso kharashyo dheeraad ah oo ku saabsan soo saarista wafers, iyada oo aan la gelin lakabka way adagtahay in la yareeyo tirada lamaanayaasha godad elektarooniga ah iyada oo la xakameynayo oo kaliya xakamaynta sideha inta uu nool yahay. Sidaa darteed, waxaa weli jirta baahi xooggan oo lagu horumarinayo hababka kale ee xakamaynta si loo gaaro dheelitirnaan wanaagsan oo u dhexeeya qiimaha wax soo saarka qalabka iyo wax-soo-saarka.
Sababtoo ah kordhinta BPD ee 1SSF waxay u baahan tahay dhaqdhaqaaq qayb ka-baxsan (PDs), ku dhejinta PD waa hab rajo leh oo lagu joojinayo hoos u dhaca laba-cirifoodka. In kasta oo PD-ku-xidhka wasakhowga birta la soo sheegay, FPD-yada ku jira 4H-SiC substrates waxay ku yaalliin masaafo ka badan 5 μm oogada lakabka epitaxial. Intaa waxaa dheer, maadaama iskudarka faafinta birta kasta ee SiC ay aad u yar tahay, way ku adag tahay wasakhda birta inay ku faafiso substrate34. Sababo la xiriira cufnaanta atomiiga ah ee biraha ah, ion ku dhejinta biraha sidoo kale waa adag tahay. Taas bedelkeeda, marka la eego xaaladda hydrogen, curiyaha ugu fudud, ions (protons) waxaa lagu dhex gelin karaa 4H-SiC ilaa qoto dheer oo ka badan 10 µm iyadoo la isticmaalayo dardar-qaade heerka MeV ah. Sidaa darteed, haddii ku-tallaalidda proton-ku ay saamayso pinning PD, markaa waxaa loo isticmaali karaa in lagu xakameeyo faafinta BPD ee substrate-ka. Si kastaba ha ahaatee, ku dhejinta protonku waxay dhaawici kartaa 4H-SiC waxayna keeneysaa hoos u dhaca waxqabadka qalabka37,38,39,40.
Si looga gudbo xaalufka aaladda ay ugu wacan tahay implantation proton, heerkul sare ayaa loo isticmaalaa in lagu hagaajiyo burburka, oo la mid ah habka nuugista inta badan la isticmaalo ka dib marka la aqbalo ion mass spectrometry (SIMS) 42. faafinta haydarojiin ayaa la sheegay iyadoo ay ugu wacan tahay ciribtirka heerkulka sare, waxaa suurtogal ah in kaliya cufnaanta atamka hydrogen ka ag dhow FD kuma filna inay ogaato ku xidhka PR-ga iyadoo la isticmaalayo SIMS. Sidaa darteed, daraasaddan, waxaanu ku dhejinay protons 4H-SiC wafers epitaxial ka hor habka samaynta qalabka, oo ay ku jiraan heerkulka sare ee nuugista. Waxaan u isticmaalnay PiN diodes qaab-dhismeedka aaladaha tijaabada ah waxaanan ku abuurnay proton-lagu beeray wafers 4H-SiC epitaxial. Waxaan markaa aragnay sifooyinka volt-ampere si aan u barano hoos u dhaca waxqabadka aaladda sababtoo ah duritaanka proton. Ka dib, waxaan aragnay fidinta 1SSF ee sawirada electroluminescence (EL) ka dib markii aan isticmaalnay korantada korantada ee diode-ka PiN. Ugu dambayntii, waxaanu xaqiijinay saamaynta duritaanka proton-ka ee xakamaynta balaadhinta 1SSF.
On berde. Jaantuska 1 wuxuu muujinayaa sifooyinka korantada hadda (CVCs) ee diode-yada PiN heerkulka qolka ee gobollada leh iyo kuwa aan lahayn tallaalka proton ka hor inta aan la garaacin hadda. Diodes-yada PiN ee leh duritaanka proton-ka waxay muujinayaan sifooyin dib-u-habayn oo la mid ah diodes-ka oo aan lahayn duritaanka proton-ka, in kasta oo astaamaha IV ay wadaagaan diode-yada. Si loo muujiyo farqiga u dhexeeya xaaladaha duritaanka, waxaanu ku dhejinnay inta jeer ee korantada ee cufnaanta hadda jirta ee 2.5 A / cm2 (oo u dhiganta 100 mA) oo ah goob xisaabeed sida ku cad Jaantuska 2. Qalooca lagu qiyaaso qaybinta caadiga ah ayaa sidoo kale loo taagan yahay xariiq dhibco leh. line. Sida laga arki karo meelaha ugu sarreeya ee qalooca, iska caabbinta wax yar ayaa kordhaysa qiyaasaha proton ee 1014 iyo 1016 cm-2, halka diode PiN oo leh qiyaasta proton ee 1012 cm-2 ay muujinayso ku dhawaad sifooyin la mid ah kuwa aan la gelin proton. . Waxa kale oo aanu samaynay proton implantation ka dib markii la sameeyay diodes-ka PiN oo aan soo bandhigin koronto-luminescence isku mid ah oo ay sabab u tahay dhaawaca uu keenay proton implantation sida ku cad Jaantuska S1 sida lagu sharaxay daraasadihii hore37,38,39. Sidaa darteed, nuugista 1600 ° C ka dib marka la geliyo Al ions waa hab lagama maarmaan ah in la sameeyo qalabyada si loo kiciyo Al aqbalaha, kaas oo hagaajin kara dhaawaca uu keeno proton implantation, taas oo ka dhigaysa CVC-yada isku mid ah inta u dhaxaysa diodes-proton ee la geliyo iyo kuwa aan la rakibin. . Soo noqnoqoshada soo noqnoqoshada ee -5 V ayaa sidoo kale lagu soo bandhigay Jaantuska S2, ma jiro farqi weyn oo u dhexeeya diode-yada leh iyo kuwa aan lahayn duritaanka proton.
Sifooyinka Volt-ampere ee diode-yada PiN oo leh iyo aan lahayn borotoonno lagu duro heerkulka qolka. Halyeygu wuxuu muujinayaa qiyaasta protons.
Inta jeer ee korantada ee hadda tooska ah ee 2.5 A/cm2 ee diodaha PiN ee leh borotoonnada la isku duro iyo kuwa aan la durin. Xariiqda dhibicda leh waxay u dhigantaa qaybinta caadiga ah.
On berde. 3 wuxuu muujinayaa sawirka EL ee diode PiN oo leh cufnaanta hadda ee 25 A/cm2 ka dib korantada. Ka hor inta aan la isticmaalin culeyska hadda jira, gobollada mugdiga ah ee diode lama arag, sida ku cad Jaantuska 3. C2. Si kastaba ha ahaatee, sida ku cad berdaha. 3a, gudaha PiN diode iyada oo aan la gelin proton, dhowr gobol oo xariijimo madow leh oo cidhifyo iftiin leh ayaa la arkay ka dib markii la adeegsaday koronto koronto. Gobollada mugdiga ah ee usha u eg ayaa lagu arkay sawirada EL ee 1SSF oo ka fidsan BPD gudaha substrate28,29. Taa beddelkeeda, qaar ka mid ah cilladaha is-dul-saarista ee fidsan ayaa lagu arkay PiN diodes oo leh borotoonno la rakibay, sida ku cad sawirka 3b-d. Isticmaalka muuqaalka sawirka raajada, waxaanu xaqiijinay jiritaanka PR-yada ka soo guuri kara BPD una guuri kara substrate-ka ee ku yaala xudduudaha xiriirada ee diode PiN iyada oo aan la isku duro proton (Jaantus. 4: sawirkan iyada oo aan la saarin korantada sare (sawir, PR) Electrodes hoostooda lama arki karo). Jaantusyada 1 iyo 2. Fiidiyowyada S3-S6 oo leh ama aan lahayn meelo mugdi ah oo dheer (waqti-kala duwan sawirada EL ee diodes-ka PiN oo aan lahayn duritaanka proton oo lagu dhejiyay 1014 cm-2) ayaa sidoo kale lagu muujiyay Macluumaadka Dheeraadka ah.
Sawirada EL ee Diodes-ka 25 A/cm2 ka dib 2 saacadood oo cadaadis koronto ah (a) iyada oo aan la gelin proton iyo qiyaaso la rakibay oo ah (b) 1012 cm-2, (c) 1014 cm-2 iyo (d) 1016 cm-2 borotoonnada .
Waxaan xisaabinay cufnaanta 1SSF ee la ballaariyay anagoo xisaabinayna meelaha mugdiga ah ee leh geesaha dhalaalaya ee saddexda PiN diode xaalad kasta, sida ku cad Jaantuska 5. Cufnaanta 1SSF ee la ballaariyay ayaa hoos u dhigta qiyaasta proton ee sii kordheysa, iyo xitaa qiyaasta 1012 cm-2, cufnaanta 1SSF ee la fidiyey aad ayuu uga hooseeyaa kan diode-ka PiN ee aan la tallaalin.
Cufnaanta korortay ee diodes-yada SF PiN oo leh iyo la'aan la geliyo proton ka dib markii lagu shubay qulqulka hadda (gobol kasta waxaa ku jira saddex diodes raran).
Gaabinta cimriga side sidoo kale waxay saamaysaa xakamaynta balaadhinta, iyo duritaanka proton-ku waxay yaraynaysaa cimriga side32,36. Waxaan ku aragnay cimriga sideha lakabka epitaxial 60 µm oo dhumucdiisuna tahay 1014 cm-2. Laga soo bilaabo noloshii hore ee side, in kasta oo maqaar-galku uu hoos u dhigayo qiimaha ~ 10%, soo laabashada xigta waxay dib u soo celinaysaa ~50%, sida ku cad sawirka S7. Sidaa darteed, cimriga sidaha, oo la dhimay galinta proton-ka awgeed, ayaa lagu soo celiyay heerkul sare. Inkasta oo 50% dhimista nolosha side ay sidoo kale xakamayso faafinta khaladaadka is dulsaarka, sifooyinka I-V, kuwaas oo sida caadiga ah ku tiirsan nolosha side, waxay muujinayaan kaliya farqi yar oo u dhexeeya diodes la isku duro iyo kuwa aan la tallaalin. Sidaa darteed, waxaanu rumaysanahay in xidhidhaynta PD ay door ka ciyaarto joojinta fidinta 1SSF.
Inkasta oo SIMS aysan ogaanin hydrogen ka dib markii ay soo jiidatay 1600 ° C, sida lagu sheegay daraasado hore, waxaan aragnay saameynta proton-ku-gelinta ee xakamaynta ballaarinta 1SSF, sida ku cad jaantusyada 1 iyo 4. 3, 4. Sidaa darteed, waxaan aaminsanahay in PD waxaa ku qotoma atamka hydrogen oo cufnaanta ka hooseysa xadka lagu ogaanayo SIMS (2 × 1016 cm-3) ama cilladaha dhibcaha ay keentay tallaalid. Waa in la ogaadaa in aynaan xaqiijin kororka caabbinta gobolka sababtoo ah dhererka 1SSF ka dib culeyska hadda socda. Tani waxaa laga yaabaa inay sabab u tahay xiriirada ohmic ee aan qummanayn ee la sameeyay iyadoo la adeegsanayo habkayaga, kaas oo la tirtiri doono mustaqbalka dhow.
Gebogebadii, waxaanu soo saarnay hab deminta kordhinta BPD ilaa 1SSF ee 4H-SiC PiN diodes anagoo adeegsanayna proton implantation ka hor samaynta qalabka. Sii xumaanta sifada I-V inta lagu jiro abuurka proton waa mid aan macno lahayn, gaar ahaan qiyaasta proton ee 1012 cm-2, laakiin saameynta xakamaynta ballaarinta 1SSF waa mid muhiim ah. In kasta oo daraasaddan aan ku samaynay 10 µm dhumuc weyn PiN diodes oo leh proton implantation si qoto dheer 10 µm, weli waa suurtogal in la sii wanaajiyo xaaladaha tallaalka oo lagu dabaqo iyaga si loo abuuro noocyada kale ee aaladaha 4H-SiC. Kharashyada dheeraadka ah ee qalabka wax-soo-saarka inta lagu jiro tallaalka proton waa in la tixgeliyo, laakiin waxay la mid noqon doonaan kuwa ku dhejinta aluminium ion, taas oo ah habka ugu muhiimsan ee wax-soo-saarka qalabka korontada 4H-SiC. Sidaa darteed, ku-tallaalidda proton ka hor farsamaynta aaladda waa hab suurtagal ah oo lagu soo saari karo aaladaha awoodda laba-cirifoodka ee 4H-SiC iyada oo aan xumaan.
Wafer 4-inch n-nooca 4H-SiC ah oo leh dhumucdiisuna tahay lakabka epitaxial ee 10 µm iyo uruurinta doping deeqaha ee 1 × 1016 cm-3 ayaa loo adeegsaday muunad ahaan. Kahor inta aan la farsameyn qalabka, H+ ions ayaa lagu dhex geliyey saxanka iyadoo leh tamar dardargelin ah oo ah 0.95 MeV heerkulka qolka ilaa qoto dheer oo ku saabsan 10 μm xagal caadiga ah ee dusha saxanka. Inta lagu guda jiro tallaalka proton, maaskaro saxan saaran ayaa la isticmaalay, saxankuna wuxuu lahaa qaybo aan lahayn oo leh qiyaasta proton ee 1012, 1014, ama 1016 cm-2. Ka dib, Al ions oo leh qiyaasaha proton ee 1020 iyo 1017 cm-3 ayaa lagu dhejiyay dhammaan waferka ilaa qoto dheer 0-0.2 µm iyo 0.2-0.5 µm oogada sare, oo ay ku xigto nuugista 1600 ° C si loo sameeyo dabool kaarboon si loo sameeyo qaab lakabka. -nooca. Ka dib, xidhiidhka dhinaca dambe ee Ni waxa lagu shubay dhinaca substrate-ka, halka 2.0 mm × 2.0 mm xidhiidhka dhinaca hore ee Ti/Al u qaabaysan yahay sawir qaade iyo habka diirka ayaa lagu shubay dhinaca lakabka epitaxial. Ugu dambayntii, xidhidhaynta xidhiidhka waxa lagu sameeyaa heerkul ah 700 °C. Ka dib markii aan jarjarey waferka chips, waxaan sameynay sifeynta walaaca iyo codsiga.
Astaamaha I-V ee diodhyada la sameeyay ee PiN ayaa lagu arkay iyadoo la adeegsanayo falanqeeyaha halbeegga semiconductor HP4155. Cadaadis koronto ahaan, 10-millise-ilbiriqsi garaacis ah oo hadda ah 212.5 A/cm2 ayaa la soo bandhigay 2 saacadood oo joogto ah 10 garaac/sek. Markii aan dooranay cufnaanta hadda ama inta jeer ee hoose, ma aanaan arag fidinta 1SSF xitaa gudaha PiN diode iyada oo aan la isku durin proton. Inta lagu jiro korantada korantada ee la dabaqay, heerkulka PiN diode waa ku dhawaad 70 ° C iyada oo aan kuleyl ula kac ah lahayn, sida ku cad sawirka S8. Sawirada korantada ayaa la helay ka hor iyo ka dib cadaadiska korantada ee cufnaanta hadda ee 25 A/cm2. Isku-dubaridka daaqa synchrotron ee dhacdooyinka raajada iyadoo la isticmaalayo raajo monochromatic ah (λ = 0.15 nm) ee Xarunta Shucaaca Aichi Synchrotron, ag vector ee BL8S2 waa -1-128 ama 11-28 (fiiri ref. 44 wixii faahfaahin ah) . ).
Inta jeer ee danab ee cufnaanta hadda jirta ee 2.5 A/cm2 waxaa la soo saaray iyada oo u dhaxaysa 0.5 V ee berdaha. 2 sida ku cad CVC gobol kasta oo ka mid ah diode-ka PiN. Laga soo bilaabo celceliska qiimaha cadaadiska Vave iyo weecanaanta caadiga ah σ ee walbahaarka, waxaanu dejineynaa qalooca qaybinta caadiga ah ee qaabka xariiqda dhibcaha ee Jaantuska 2 annaga oo adeegsanayna isla'egta soo socota:
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Waqtiga boostada: Nov-06-2022
