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4H-SiC yakatengeswa sechinhu chemagetsi semiconductor zvishandiso. Zvisinei, kuvimbika kwenguva refu kwe4H-SiC zvigadziro chinhu chipingamupinyi kukushandiswa kwavo kwakakura, uye dambudziko rinonyanya kukosha rekuvimbika kwe4H-SiC zvishandiso ndeye bipolar degradation. Uku kushatisa kunokonzerwa nekamwe Shockley stacking kukanganisa (1SSF) kuparadzira kwebasal ndege dislocations mu4H-SiC makristasi. Pano, isu tinokurudzira nzira yekudzvinyirira 1SSF yekuwedzera nekudyara maproton pa4H-SiC epitaxial wafers. PiN diodes akagadzirwa pamawaferi ane proton implantation airatidza zvakafanana zvazvino-voltage hunhu semadhiodhi asina kuisirwa proton. Mukupesana, iyo 1SSF yekuwedzera inonyatso kudzvanywa muproton-yakaiswa PiN diode. Nekudaro, kuiswa kwemaproton mu4H-SiC epitaxial wafers inzira inoshanda yekudzvanya bipolar degradation ye4H-SiC simba semiconductor zvishandiso uchichengetedza mashandiro echishandiso. Mhedzisiro iyi inobatsira mukugadzirwa kwemidziyo yakavimbika ye4H-SiC.
Silicon carbide (SiC) inozivikanwa zvakanyanya semiconductor zvinhu zvepamusoro-simba, high-frequency semiconductor zvishandiso zvinogona kushanda munzvimbo dzakaoma1. Kune akawanda maSiC polytypes, pakati pawo 4H-SiC ine yakanakisa semiconductor mudziyo wenyama zvimiro senge yakakwira maerekitironi mobility uye yakasimba breakdown yemagetsi field2. 4H-SiC mawafer ane dhayamita ye6 inches parizvino ari kutengeswa uye anoshandiswa kugadzirwa kwakawanda kwemagetsi semiconductor zvishandiso3. Madhizaini masisitimu emotokari dzemagetsi nezvitima akagadzirwa achishandisa 4H-SiC4.5 simba semiconductor zvishandiso. Zvisinei, midziyo ye4H-SiC ichiri kutambura kubva kwenguva yakareba yakavimbika nyaya dzakadai sekuparara kwedielectric kana kuvimbika kwepfupi-circuit, 6,7 iyo imwe yenyaya dzakanyanya kuvimbika ndeye bipolar degradation2,8,9,10,11. Uku kusvibiswa kwebipolar kwakawanikwa makore anopfuura makumi maviri apfuura uye rave riri dambudziko mukugadzirwa kweSiC mudziyo.
Bipolar degradation inokonzerwa nekamwechete Shockley stack defect (1SSF) mu 4H-SiC makristasi ane basal plane dislocations (BPDs) inopararira kuburikidza nekugadzirisa kunowedzera dislocation glide (REDG)12,13,14,15,16,17,18,19. Naizvozvo, kana BPD yekuwedzera yakatsikirirwa ku1SSF, 4H-SiC magetsi emagetsi anogona kugadzirwa pasina bipolar degradation. Nzira dzinoverengeka dzakataurwa kudzvanyirira kupararira kweBPD, senge BPD kune Thread Edge Dislocation (TED) shanduko 20,21,22,23,24. Mumazuva ekupedzisira eSiC epitaxial wafers, BPD inonyanya kuwanikwa mu substrate uye kwete mu epitaxial layer nekuda kwekushandurwa kweBPD kuTED panguva yekutanga yekukura epitaxial. Nokudaro, dambudziko rakasara rebipolar degradation ndiko kugoverwa kweBPD mu substrate 25,26,27. Kuiswa kwe "composite reinforcing layer" pakati pe drift layer uye substrate yakarongwa senzira inoshanda yekudzvinyirira BPD kuwedzera mu substrate28, 29, 30, 31. Iyi tambo inowedzera mukana we electron-hole pair recombination mu epitaxial layer uye SiC substrate. Kudzikisa huwandu hwema electron-hole pairs kunoderedza kutyaira kweREDG kuenda kuBPD muchikamu chepasi, saka iyo inoumbwa yekusimbisa layer inogona kudzvanya bipolar degradation. Zvinofanira kucherechedzwa kuti kuiswa kwechigadziko kunosanganisira kuwedzera mari mukugadzirwa kwemawaferi, uye pasina kuiswa kwechifukidzo zvakaoma kudzikisa huwandu hwema electron-hole pairs nekudzora chete kutonga kwehupenyu hwemutakuri. Naizvozvo, pachine kudikanwa kwakasimba kwekugadzira dzimwe nzira dzekudzvinyirira kuti uwane chiyero chiri nani pakati pemutengo wekugadzira mudziyo uye goho.
Nekuti kuwedzera kweBPD kuenda ku1SSF kunoda kufamba kwechikamu chekusagadzikana (PDs), kupinza iyo PD inzira inovimbisa yekudzivisa bipolar degradation. Kunyange zvazvo PD pinning nesimbi tsvina yakashumwa, maFPD mu4H-SiC substrates anowanikwa pane imwe nzvimbo inopfuura 5 μm kubva pamusoro pe epitaxial layer. Pamusoro pezvo, sezvo kupararira kweiyo simbi chero ipi zvayo muSiC idiki, zvakaoma kuti tsvina yesimbi ipararire mu substrate34. Nekuda kwehukuru hweatomiki huremu hwesimbi, kuisirwa ion kwesimbi kwakaomawo. Kusiyana neizvi, kana iri hydrogen, chinhu chakareruka, maion (protons) anogona kuiswa mu4H-SiC kusvika pakadzika inopfuura 10 µm uchishandisa MeV-class accelerator. Naizvozvo, kana proton implantation ichikanganisa PD pinning, saka inogona kushandiswa kudzvanya BPD kupararira mu substrate. Nekudaro, kuisirwa proton kunogona kukuvadza 4H-SiC uye kukonzeresa kuderedzwa kwechishandiso37,38,39,40.
Kukunda kushatiswa kwemudziyo nekuda kwekuisirwa kweproton, kupisa kwepamusoro-tembiricha kunoshandiswa kugadzirisa kukuvadzwa, kwakafanana neannealing nzira inowanzoshandiswa mushure mekugamuchira kuisirwa ion mukugadzira mudziyo1, 40, 41, 42. Kunyangwe yechipiri ion mass spectrometry (SIMS)43 ine yakashuma hydrogen diffusion nekuda kwekukwira-tembiricha annealing, zvinogoneka kuti density yemaatomu ehydrogen pedyo neFD haina kukwana kuona pinning yePR uchishandisa SIMS. Naizvozvo, muchidzidzo ichi, takadyara maproton mu4H-SiC epitaxial wafers pamberi pechigadzirwa chekugadzira, kusanganisira kupisa kwakanyanya. Isu takashandisa maPiN diode seyekuyedza zvigadziriso zvemidziyo uye takaagadzira paproton-yakaiswa 4H-SiC epitaxial wafers. Isu takazoona iyo volt-ampere maitiro ekudzidza kudzikira kwekuita kwechigadzirwa nekuda kwejekiseni reproton. Zvadaro, takaona kuwedzera kwe1SSF mumifananidzo ye electroluminescence (EL) mushure mekushandisa magetsi emagetsi kuPiN diode. Pakupedzisira, takasimbisa mhedzisiro yejekiseni reproton pakudzvanywa kwekuwedzera kwe1SSF.
Pamusoro pemuonde. Mufananidzo 1 unoratidza azvino-voltage maitiro (CVCs) ePiN diode pakamuri tembiricha mumatunhu ane uye asina proton implantation isati yapushwa ikozvino. MaPiN diode ane jekiseni reproton anoratidza maitiro ekugadzirisa akafanana nedhiodhi asina jekiseni reproton, kunyangwe iwo IV maitiro akagovaniswa pakati pemadhiodhi. Kuti tiratidze mutsauko pakati pemamiriro ejekiseni, takaronga frequency yevoltage kumberi ikozvino density ye 2.5 A/cm2 (inoenderana ne100 mA) sechiverengero chiitiko sezvakaratidzwa muFigure 2. Iyo curve inofananidzwa nekugoverwa kwakajairika inomiririrwawo. nemutsetse une madota. line. Sezvinoonekwa kubva panhongonya dzemacurves, kupikisa kunowedzera zvishoma pamadhora eproton e1014 uye 1016 cm-2, nepo PiN diode ine proton dose ye1012 cm-2 inoratidza hunhu hwakafanana neusina kuisirwa proton. . Isu takaitawo kuiswa kweproton mushure mekugadzirwa kwePiN diodes iyo isina kuratidza yunifomu electroluminescence nekuda kwekukuvadzwa kwakakonzerwa neproton implantation sezvakaratidzwa muFigure S1 sezvakatsanangurwa muzvidzidzo zvakapfuura37,38,39. Naizvozvo, kuvharira pa1600 ° C mushure mekusimwa kweAl ions inzira inodiwa kugadzira michina yekumisikidza iyo Al acceptor, inogona kugadzirisa kukuvadzwa kwakakonzerwa neproton implantation, izvo zvinoita kuti maCVCs akafanana pakati peakaiswa uye asina kuisirwa proton PiN diodes. . Iyo reverse yazvino frequency pa -5 V inoratidzwawo muMufananidzo S2, hapana mutsauko wakakura pakati pemadiode ane uye asina jekiseni reproton.
Volt-ampere maitiro ePiN diode ane uye asina jekiseni proton pane tembiricha. Ngano inoratidza chiyero cheproton.
Voltage frequency pane yakananga ikozvino 2.5 A/cm2 yePiN diode ine jekiseni uye isina-ijekiseni proton. Mutsetse une madota unofambirana nekugoverwa kwakajairika.
Pamusoro pemuonde. 3 inoratidza EL mufananidzo wePiN diode ine density iripo ye25 A/cm2 mushure memagetsi. Usati washandisa pulsed ikozvino mutoro, nzvimbo dzakasviba dze diode hadzina kuonekwa, sezvinoratidzwa mumufananidzo 3. C2. Zvisinei, sezvinoratidzwa mumufananidzo. 3a, muPiN diode isina kuisirwa proton, matunhu akati wandei ane mitsetse ine mitsetse yechiedza akaonekwa mushure mekushandisa magetsi emagetsi. Nzvimbo dzakasvibira dzakaita setsvimbo dzinoonekwa mumifananidzo yeEL ye1SSF ichibva kuBPD mune substrate28,29. Pane kudaro, mamwe zvikanganiso zvakatambanudzwa zvakaonekwa muPiN diode nemaproton akaiswa, sezvakaratidzwa muFig. 3b-d. Tichishandisa X-ray topography, takasimbisa kuvapo kwePRs inogona kufamba kubva kuBPD kuenda kune substrate iri panharaunda yevanobatwa muPiN diode pasina proton jekiseni (Fig. 4: mufananidzo uyu usingabvisi electrode yepamusoro (yakatorwa mufananidzo, PR). pasi pemagetsi haaoneki). Nokudaro, nzvimbo yerima mumufananidzo weEL inoenderana nekuwedzera 1SSF BPD mu substrate yemamwe maPiN diode anoratidzwa muMifananidzo 1 uye 2. Vhidhiyo S3-S6 ine uye isina kuwedzerwa. nzvimbo dzakasviba (nguva-inosiyana-siyana EL mifananidzo yePiN diode isina jekiseni reproton uye yakasimwa pa 1014 cm-2) inoratidzwawo mune Supplementary Information.
EL mifananidzo yePiN diodes pa25 A/cm2 mushure memaawa maviri emagetsi ekushushikana (a) pasina kuisirwa proton uye ine madhizi akaiswa e (b) 1012 cm-2, (c) 1014 cm-2 uye (d) 1016 cm-2 mapurotoni.
Takaverenga kuwanda kwekuwedzera kwe1SSF nekuverenga nzvimbo dzakasviba dzine micheto yakajeka mumatatu ePiN diode kune imwe neimwe mamiriro, sezvakaratidzwa mumufananidzo 5. Kuwanda kwekuwedzera kwe1SSF kunoderera nekuwedzera kweproton dose, uye kunyange pachiyero che 1012 cm-2, density ye1SSF yakawedzerwa yakadzikira zvakanyanya pane isina kuisirwa PiN diode.
Yakawedzera densities yeSF PiN diodes ine uye isina proton implantation mushure mekurodha ne pulsed current (nyika yega yega yaisanganisira matatu akaremerwa diode).
Kupfupisa hupenyu hwemutakuri kunokanganisawo kudzvinyirira kwekuwedzera, uye jekiseni reproton rinoderedza hupenyu hwemutakuri32,36. Takacherechedza hupenyu hwemutakuri mune epitaxial layer 60 µm gobvu ine jekiseni maproton e1014 cm-2. Kubva panguva yekutanga yehupenyu hwekutakura, kunyange zvazvo kuiswa kunoderedza kukosha kusvika ~ 10%, annealing inotevera inoidzorera ku ~ 50%, sezvakaratidzwa muFig. S7. Naizvozvo, hupenyu hwemutakuri, hwakaderedzwa nekuda kwekuiswa kweproton, inodzoreredzwa nepamusoro-tembiricha annealing. Kunyangwe kudzikiswa ne50% kwehupenyu hwekutakura kuchidzvinyirirawo kupararira kwekukanganisa kwakarongeka, maitiro eI-V, ayo anowanzoenderana nehupenyu hwemutakuri, anoratidza misiyano midiki pakati pemajekiseni uye asina kuisirwa diode. Naizvozvo, isu tinotenda kuti PD anchoring inoita basa mukudzivisa 1SSF kuwedzera.
Kunyange zvazvo SIMS isina kuona hydrogen mushure mekuvhara pa 1600 ° C, sezvakataurwa mune zvidzidzo zvekare, takaona kuitika kweproton implantation pakudzvinyirirwa kwe1SSF kuwedzera, sezvakaratidzwa muFigure 1 uye 4. 3, 4. Nokudaro, tinotenda kuti iyo PD inomiswa nemaatomu ehydrogen ane density iri pasi pemuganhu wekuona weSIMS (2 × 1016 cm-3) kana kuremara kwepoinzi kunokonzerwa nekuiswa. Izvo zvinofanirwa kucherechedzwa kuti isu hatina kusimbisa kuwedzera kwe-on-state kuramba nekuda kwekurebesa kwe1SSF mushure mekuvhiya kwazvino mutoro. Izvi zvinogona kunge zvichikonzerwa nekusakwana ohmic kushamwaridzana kwakaitwa uchishandisa maitiro edu, ayo achabviswa munguva pfupi iri kutevera.
Mukupedzisa, takagadzira nzira yekudzima yekuwedzera iyo BPD kusvika ku1SSF mu4H-SiC PiN diodes tichishandisa proton implantation isati yagadzirwa. Kuparara kwehunhu hweI-V panguva yekuiswa kweproton hakuna kukosha, kunyanya pachiyero cheproton che 1012 cm–2, asi mhedzisiro yekudzvinyirira kuwedzera kwe1SSF yakakosha. Kunyangwe muchidzidzo chino takagadzira 10 µm mukobvu PiN diode neproton kuisirwa kusvika pakadzika 10 µm, zvichiri kugoneka kuwedzeredza mamiriro ekudyara nekuashandisa kugadzira mamwe marudzi e4H-SiC zvishandiso. Kuwedzera mari yekugadzira mudziyo panguva yekuiswa kweproton kunofanirwa kutariswa, asi ichafanana neiyo yekuisirwa aluminium ion, inova ndiyo nzira huru yekugadzira ye4H-SiC magetsi emagetsi. Nekudaro, kuisirwa proton kusati kwagadziriswa mudziyo inzira inogoneka yekugadzira 4H-SiC bipolar magetsi maturusi pasina kuora.
A 4-inch n-type 4H-SiC wafer ine epitaxial layer gobvu ye10 µm uye donor doping concentration ye1 × 1016 cm-3 yakashandiswa semuenzaniso. Asati agadzirisa mudziyo, H+ ions yakaiswa mundiro ine simba rekumhanyisa re 0.95 MeV pane tembiricha yekamuri kusvika pakadzika hunosvika gumi μm pakona yakajairika kune iyo plate pamusoro. Panguva yekuisirwa proton, mask pandiro yakashandiswa, uye ndiro yaive nezvikamu zvisina uye ine proton dose ye1012, 1014, kana 1016 cm-2. Zvadaro, maAl ions ane maproton doses e1020 uye 1017 cm–3 akaiswa pamusoro pewafer yese kusvika pakadzika 0-0.2 µm uye 0.2–0.5 µm kubva pamusoro, zvichiteverwa nekuiswa pa1600°C kugadzira kabhoni kavha fomu ap layer. -type. Zvadaro, rutivi rwekumashure rweNi contact rwakaiswa padivi re substrate, ukuwo 2.0 mm × 2.0 mm muzinga-wakaumbwa neTi/Al pamberi pedivi rekubatana rakagadzirwa nephotolithography uye peel process yakaiswa padivi re epitaxial layer. Pakupedzisira, kubata annealing kunoitwa pakupisa kwe700 ° C. Mushure mekucheka wafer kuita machipisi, takaita kushushikana hunhu uye kushandisa.
Iyo I-V maitiro eakagadzirwa ePiN diode akaonekwa pachishandiswa HP4155B semiconductor parameter analyzer. Sekunetseka kwemagetsi, 10-millisecond pulsed ikozvino ye212.5 A / cm2 yakaunzwa kwemaawa maviri pane imwe nguva ye10 pulses / sec. Patakasarudza yakaderera ikozvino density kana frequency, isu hatina kuona kuwedzera kwe1SSF kunyangwe muPiN diode isina jekiseni reproton. Munguva yemagetsi emagetsi anoshandiswa, tembiricha yePiN diode yakatenderedza 70 ° C pasina kudziyisa nemaune, sezvakaratidzwa mumufananidzo S8. Mifananidzo yeElectroluminescent yakawanikwa isati yasvika uye mushure mekumanikidzwa kwemagetsi pane yazvino density ye25 A / cm2. Synchrotron reflection grazing incidence X-ray topography using monochromatic X-ray beam (λ = 0.15 nm) paAichi Synchrotron Radiation Center, iyo ag vector muBL8S2 ndeye -1-128 kana 11-28 (ona ref. 44 kuti uwane ruzivo) . )
Iyo voltage frequency pairi kumberi ikozvino density ye2.5 A / cm2 inotorwa nepakati ye 0.5 V mufig. 2 zvinoenderana neCVC yenzvimbo imwe neimwe yePiN diode. Kubva pakukosha kwekunetseka kweVave uye kutsauka kwakajairwa σ yekushushikana, tinoronga yakajairika yekugovera curve muchimiro chemutsara une doti mumufananidzo 2 tichishandisa inotevera equation:
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Nguva yekutumira: Nov-06-2022
