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4H-Sic yave yakatengeswa seyakagadzirwa zvinhu zvemidziyo yemagetsi semiconductor. Nekudaro, kuvimbika kwenguva refu kwe-4h-sic zvishandiso chipingamupinyi pakushandisa kwavo kwakakura, uye dambudziko rakakosha kwazvo rekuvimbika kwe4h-sic zvishandiso zvekuputika. Uku kushatiswa kunokonzerwa neyakawana shockley yekuisa mhosva (1SSF) kwekuparadzira kweBasal ndege discation mune 4h-sic makristasi. Pano, tinofunga nzira yekudzvinyirira 1SSF kuwedzera nekuisa protons pane 4h-stic epitaxial was. Pin Diode prabrid pane Wafers neProton Mplantiation yakaratidza zvakafanana zvazvino-voltage hunhu sekuti diode pasina proton kusimbisa. Mukupesana, kuwedzera kwe1SSF kunodzvinyirirwa zvinobudirira muProton-wakamiswa pin diode. Saka, kusanzwisisika kwemapuroteni mu4h-sic epitaxial wafters ndiyo nzira inoshanda yekudzvinyirira bipolurity yekudzvinyirira ye4h-sic poMiconductor zvishandiso paunenge uchichengetedza mudziyo wekuita. Mhedzisiro iyi inobatsira mukuvandudzwa kweakavimbika kwazvo 4h-sic zvishandiso.
Silicon Carbide (SIC) inozivikanwa zvakanyanya seyakagadzirwa semiconductor yezvinhu zvakakwirira-simba, yakakwira-frequency semicononductor zvishandiso zvinoshanda munzvimbo dzine hutsinye1. Kune akawanda siki polytypes, pakati peizvozvo 4H-sic ine yakanaka semiconductor chishandiso chivakwa chakanyanya emagetsi ekufambisa uye breaddown yemagetsi emagetsi2. 4H-Sic Wafers neDhivha yemasendimita matanhatu parizvino kutengeserana uye inoshandiswa pakugadzirwa kwemasimba emasimba eSimba Semiconductor mhandara Traction Systems yeMotokari dzeMagetsi uye zvitima zvakavezwa uchishandisa 4H-Sic4.5 Power semicononductor zvishandiso. Zvisinei, 4h-sic zvishandiso zvekuvimbika kwenguva refu sekuparadzwa kwenguva refu zvakaita seDilelectric kuputswa kana kupfupika-kwedunhu, Uku kusvibiswa kwe bipolar kwakawanikwa makore anopfuura makumi maviri apfuura uye kwave kwenguva refu kuve dambudziko muSic mudziyo wekugadzira fibraction.
Bipolar Degradation inokonzerwa neyakagadziriswa shockley stack kuremara Naizvozvo, kana BPD kuwedzera kwakadzvanywa kune 1ssf, 4h-siki midziyo yemagetsi inogona kuve yakagadzirwa pasina kudzvinyirira kwebhaibheri. Nzira dzinoverengeka dzakataurwa kuti dzidzvinyirire BPD Kupararira, kwakadai seBPD to Thread Washington, TED) Shanduro 20,21,22,23,24. MuChando chichangobva kuitika. Naizvozvo, dambudziko rasara rekushatirisa bipolar ndiko kugoverwa kweBPD mune substrate 25,26,27. Kuiswa kweiyo "Inosimbisa Refuforment" pakati peiyo Drift Layer uye Substrate yakakurudzirwa Senzira yekudzvinyirira BSN Kuderedza huwandu hwemagetsi-gomba zvigoma zvinodzora simba rekutyaira reRedg kuti BPD mune subst Izvo zvinofanirwa kucherechedzwa kuti kuiswa kweiyo layer inowedzera mari yekugadzirwa kweanowedzera, uye pasina kuiswa kweiyo yakaoma kuderedza huwandu hwemagetsi emagetsi nekudzora chete kutonga kwehupenyu hwekutakura. Naizvozvo, kuchine chikonzero chakasimba chekuvandudza mimwe nzira dzekutanga kuti dziwane chiyero chiri nani pakati pemutengo wekugadzira mudziyo uye goho rekugadzira.
Nekuti kuwedzera kweBPD kuenda ku1ssf inoda kufamba kwechidimbu chekusaruka Kunyangwe pd pinning nekusvibiswa kwesimbi kwakataurwa, fpds in 4h-sic sosi iri kure kweinopfuura 5 μm kubva pamusoro yeiyo epitaxial layer. Mukuwedzera, sezvo kusiyana kwesimbi chero simbi iri muSIC iri diki kwazvo, zvakaoma kuti simbi kusvibiswa kusanganisa kuti ive substrate34. Nekuda kwehukuru hwaro hombe yemasimbi, ion kusamiswa kwemasimbi kwakaomawo. Mukupesana, mune iyo hydrogen, chinhu chakareruka, ion (protsons) inogona kuiswa mukati me4h-sic kusvika pakudzika kweanopfuura 10 μm uchishandisa mv-kirasi accelerator. Naizvozvo, kana kupururudza kwemvura inokanganisa pd pd pinning, ipapo inogona kushandiswa kudzvinyirira BPD kuparadzaniswa mune substrate. Nekudaro, proton kusimudzwa kunogona kukuvadza 4h-sic uye mhedzisiro yakadhindwa mudziyo performance37,38,30,40,40.
Kukurira kushomeka kwekusvibiswa nekuda kwekunyora kweproton hazvina kukwana kuti uone kupaza kweiyo pr uchishandisa sims. Naizvozvo, muchidzidzo ichi, isu takatarisa protons mu4h-sic epitaxial wafers pamberi pechishandiso chishandiso chekushandisa, kusanganisira hombe tembiricha inosimbisa. Isu takashandisa Pini Diodes seyekuedza mudziyo zvivakwa uye zvakavagadzirira paProton-akaiswa 4h-sic Epitaxial Wafers. Isu takabva tacherekedza volt-ampere maitiro ekudzidza kusvibiswa kwemabasa ekushandisa nekuda kweProton jekiseni. Pashure pacho, takacherekedza kuwedzera kwe 1ssf mumagetsi (el) mifananidzo mushure mekushandisa voltacal voltage kune iyo pini diode. Pakupedzisira, isu takaratidza mhedzisiro yePuroton jekiseni pakudzvinyirirwa kweiyo 1SSF kuwedzera.
PaPigi. Mufananidzo 1 unoratidza hunhu hwazvino-hwekuvhora Pin Diode nePuroton Injection Show rectificification yakafanana neDiode pasina Procton jekiseni, kunyangwe iyo IV maitiro akagoverwa pakati peDiode. Kuti tiratidze musiyano uripo pakati pemamiriro ezvinhu jekiseni, isu takasangana nekumberi kwechiitiko chezvinhu 2.5 A / CM2 (CM2 mutsara. Sezvazvinogona kuoneka kubva pamapepa emakaruva, kupatsanura zvishoma kunowedzera kuPuroton Doses ye1014 uye 1016 CM-2 CM-2 inoratidza zvimwechete zvakafanana maitiro asingaoneki pronisation. Isu takaitawo Proton kusimira mushure mekutora kwePIN Diodes isina kuratidzira vesi magetsi nekuda kwekukuvara kwakakonzerwa neProton kusimuka sezvakaratidzwa mumufananidzo S1 sekutsanangurwa kwechifananidzo Naizvozvo, kuwedzerwa pamazana gumi nematanhatu. Iyo Reverse At Frequency At -5 v inoburitswa mumufananidzo S2, hapana musiyano wakakosha pakati pe diode ne uye pasina puroton jekiseni.
Volt-Ampere maitiro ePIN Diode na uye pasina majekiseni ejekiseni pamhepo tembiricha. Iyo ngano inoratidza iyo madhiri ezviratidziro.
Voltage Frequency kuDirect Yazvino Mutsara wedunhu unoenderana nekugoverwa kwakajairwa.
PaPigi. 3 inoratidza mufananidzo weEl wePIN Diode ine chirwere chazvino che25 a / cm2 mushure mekuvhurwa. Usati washandisa iyo yakadhonzwa mari yazvino, matunhu akasviba edhidhi haana kucherechedzwa, sezvakaratidzwa mumufananidzo 3. C2. Nekudaro, sezvakaratidzwa muPi. 3A, mune pini diode pasina Proton kusimudzwa, matunhu akasviba akati wandei aine mishonga yechiedza yakacherechedzwa mushure mekushandisa emagetsi voltage. Dunhu retsvina dzakadaro dzinoonekwa mumifananidzo yeEl ye 1ssf inowedzera kubva kuBPD mune substrate28,29. Panzvimbo pezvo, vamwe vakawedzera kuitisa zvikanganiso zvakacherechedzwa muPIN Diode nePronons vakapfurwa, sezvakaratidzwa muPi. 3b-d. Kushandisa X-Ray Topography, isu takaratidza kuvapo kwePRD kuti vabve kuBPD kune iyo Electrode isina kuoneka). Pin Diode inoratidzwa muhuwandu 1 uye 2
El mifananidzo yePIN Diodes pa25 A / CM2 APPLED DESES YEMABHUKU
Takaverenga density yeyakawedzerwa 1ssf nekuverenga nzvimbo dzerima neyekupenya pini
Kuwedzera densities yeSF Pin Diode ne uye pasina proton kusimira mushure mekutakura neyakagadzirwa zvazvino (yega yega nyika yaisanganisira matatu akaiswa diodes).
Kupfupiso hupenyu hwekutakura hunokanganisa kudzvinyirira kwekuwedzera, uye jekiseni rekuratidzira rinoderedza hupenyu hwekutakura38,36. Isu takacherekedza kutakura hupenyu mune epitaxial layer 60 μm gobvu neine jekiseni protons ye 1014 cm-2. Kubva pane yekutanga kutakura hupenyu, kunyangwe iyo iyo iyo Implant inoderedza kukosha kune ~ 10%, inotevera inosimbisa inodzosera iyo ~ 50%, sezvakaratidzwa mu fig. S7. Naizvozvo, iyo inotakura hupenyu, yakaderedzwa nekuda kwekuiswa kwepurotoni, inodzorerwa nekudziya kwepamusoro. Kunyangwe iri 5% kuderedzwa kwehupenyu hwekutakura zvakare zvinodzvinyirira kupokana kwekusimbisa kwekutadza, iyo-v inoenderana nehupenyu hwekutakura, ratidza kusawirirana zvidiki pakati pejekiseni uye isina-yakamiswa diode. Naizvozvo, tinotenda kuti PD chinja zvinotora chikamu mukuwedzera 1SF kuwedzera.
Kunyangwe sims yaisasaona hydrogen mushure mekuwedzera pa1 16 ° C, sezvataurwa muzvidzidzo zvePSSF pazasi peSims (2 × 1016 cm-3) kana point kuremara kunokonzerwa ne kupinza. Izvo zvinofanirwa kucherechedzwa kuti isu hatina kusimbisa kuwedzera kweiyo pane-state kurwisa nekuda kweiyo leongation ye1ssf mushure mekuvhiya mari yazvino. Izvi zvinogona kuve nekuda kwekutaurirana zvisina kukwana OHMIC kwakaitwa uchishandisa maitiro edu, ayo achabviswa munguva pfupi iri kutevera.
Mukupedzisa, takatanga nzira yekubvisa yekuwedzera iyo BPD kuenda ku1SSF mu4H-Sic pin diodes tichishandisa proton kusimira isati yabika. Kuora kweiyo I-v hunhu panguva yeProton Kunyangwe muchidzidzo ichi isu takaburitsa quick pini Zvimwe zvinodhura zvekutama kwemudziyo panguva yekuvhenekera kwaProton inofanira kutariswa, asi ivo vachafanana neiyo aluminium Ioni, iyo ndiyo huru yekugadzira maitiro e4h-sic power mositi. Nekudaro, proton kusimira kusati kwatanga kusvitsa nzira ingangoita nzira yekuchinjisa 4h-sic bipolar midziyo pasina kuora.
A 4-inch n-Type 4h-sic Wafer ine epitaxial layer bikegness yegumi Usati wagadzirisa chishandiso, hi с fan Munguva yekuisa proton, mask pane imwe ndiro yaishandiswa, uye ndiro yaive neiyo zvikamu kunze uye neiyo proton dosi ye 1012, 1014, kana 1016 cm-2. Zvadaro, al Ion nePuroton Deses ye1020 uye 1017 CM-3 yakaiswa pamusoro pewire neyakaderera kusvika kumusoro, inoteverwa neyakagadziriswa pa1 1600 ° C kuumba carbon cap yekugadzira AP Layer. -Type. Pashure pacho, imwe kumashure SIT NI YAKABUDA PAMUSORO PAMUSORO PAMUSORO PAMUSORO PAKATI. Chekupedzisira, taura zvinoshamisa zvinoitwa pakudziya kwe700 ° C. Mushure mekucheka waffer mune machipisi, takaita kushushikana chimiro uye kushandisa.
Iyo i-v hunhu hweiyo yakadhindwa pin diode yakacherechedzwa uchishandisa HP4155B Semetonductor parameter. Sekushushikana kwemagetsi, kigumi-millisecond yakadhonzwa zvazvino makumi maviri neshanu. Patinosarudza yakadzika dens density kana frequency, hatina kucherechedza kuwanda kwe1SSF kunyangwe mune pini diode pasina Proton jekiseni. Munguva yekushandiswa kwemagetsi emagetsi, tembiricha yePIN Diode iri kutenderera 70 ° C pasina kusimudzira kupisa, sezvakaratidzwa mumufananidzo S8. Mifananidzo yemagetsi yakawanikwa isati yatanga uye mushure mekunetseka kwemagetsi kune iyo yazvino density ye25 a / cm2. Synchrotron Reflection Grazing Chiitiko X-Ray Topography uchishandisa Monochromatic X-Ray Beam (The Ag Vector muBl8s2 iri -1-128 kana 11-28 (ona Ref. 44 Zveruzivo). 44 From ).
Iyo freage frequency kuimba yekumberi yechibvumirano chazvino ye2,2,5 a / cm2 inobviswa neyakaipindirana ne1.5 v mu fig. 2 Maererano neCVC yemamiriro ega ega ePini Diode. Kubva pane kukosha kwekunetseka kweshoko reVavere uye kutsauka kweshoko rekushushikana, isu tinoronga kugoverwa kwakajairika muchimiro chemutsetse wemufananidzo muhuwandu 2 uchishandisa zvinotevera equation:
Werner, Mr & Fahrner, Wongorora pane Zvigadzirwa, microsensors, masisitimu uye zvishandiso zvezvishandiso zvepamusoro uye zvine hutano-zvemamiriro ekunze. Werner, Mr & Fahrner, Wongorora pane Zvigadzirwa, microsensors, masisitimu uye zvishandiso zvezvishandiso zvepamusoro uye zvine hutano-zvemamiriro ekunze.Werner, Mr uye Farner, Wr Ongdet of Zvigadzirwa, microsensors, masisitimu uye zvishandiso zvekushandisa munzvimbo dzakasimba uye dzakashata. Werner, Mr & Fahrner, WR 对用于高温和恶劣环境应用的材料, 微传感器, 系统和设备的评论. Werner, Mr & Fahrner, WR Ongorora yezvinhu, microsensors, masisitimu uye zvishandiso zvezvishandiso zvemamiriro ekunze uye zvakashata zvekushandisa.Werner, Mr uye Farner, Wr Ongorora yezvinhu, micrevensensors, masisitimu uye zvishandiso zvekushandisa pakushandisa kwakanyanya uye mamiriro akaomarara.IEEE Trans. Magetsi magetsi magetsi. 48, 249-257 (2001).
Kimoto, T. & Cooper, ja Coler Kimoto, T. & Cooper, ja ColerKimoto, T. Uye Cooper, ja Basics yeSilicon Carbide Carvilogy Basics yeSilicon Carbide Technology: Kukura, Maitiro uye Mashandiro uye Mashandiro eVol. Kimoto, T. & Cooper, ja 碳化硅技术基础碳化硅技术基础: 增长, 表征, 设备和应用卷. Kimoto, T. & Cooper, ja carbon ± silicon technology base carbon ± silicon technology base: Kukura, tsananguro, zvishandiso uye zvinyorwa zvinoshandisaKimoto, T. Uye Cooper, J. Basics of Silicon Carbide Technology Basics yeSilicon Carbide Technology: Kukura, hunhu uye zvishandiso uye zvigadzirwa uye zvirimo vol.252 (Wile Singapore PTE LTD, 2014).
Veladis, V. Yakakura kutengeserana kweSIC: Status quo uye zvipingamupinyi zvekukundwa. Alma Mater. sainzi. Foramu 1062, 125-130 (2022).
Broughton, J., Smet, V., Tummala, RR & Joshi, YK Review of thermal packaging technologies for automotive power electronics for traction purposes. Broughton, J., Smet, V., Tummala, RR & Joshi, YK Review of thermal packaging technologies for automotive power electronics for traction purposes.Broughton, J., Smet, V., Tummala, RR and Joshi, YK Overview of thermal packaging technologies for automotive power electronics for traction purposes. Brounon, J., SMET, V., Tummala, Rr & Joshi, Yk 用于牵引目的的汽车电力电子热封装技术的回顾. Broun, J., SMET, V., Tummala, Rr & Joshi, YKBrounon, J., SMET, v., Tummala, vr naJoshi, Yk Thoview yeTeging Cakeging Technology yeMotokari Magetsi Emagetsi Emagetsi Emagetsi Emagetsi Emagetsi Emagetsi Emagetsi Emagetsi Emagetsi Emagetsi Emagetsi EmagetsiJ. Electron. Package. trance. ASME 140, 1-11 (2018).
Sato, K., Kato, H. & Fukuushima, T. Kugadziriswa kweSIC Yakashandiswa Traction System ye Inotevera-Chizvarwa Chikwata Chekumhanya-kumhanya. Sato, K., Kato, H. & Fukuushima, T. Kugadziriswa kweSIC Yakashandiswa Traction System ye Inotevera-Chizvarwa Chikwata Chekumhanya-kumhanya.Sato K., Kato H. naFuushima T. Budushima T. Budiriro yeiyo yakaiswa SIC traction system yechiitiko chinotevera chengarava yakakwiraSato K., Kato H. naFuushima T. Traction System Development yeSic application yechiitiko chinotevera chechizvarwa chepamusoro-scinkansen zvitima. Appendix Ieej J. Ind. 9, 453-459 (2020).
Svazaki, J., Hayashi, S., Yonzawa, Y. & okumura, H. Matambudziko kuziva Zvakanyanya SIC SIC DOPERCOMS: Kubva kuZviripo uye Nyaya dzeSIC WAC WACARERS. Svazaki, J., Hayashi, S., Yonzawa, Y. & okumura, H. Matambudziko kuziva Zvakanyanya SIC SIC DOPERCOMS: Kubva kuZviripo uye Nyaya dzeSIC WAC WACARERS.Sziva, J., Hayashi, S., Yonzawa, Y. Uye Onumbura, H. Zvinetso mukushandiswa kweakavimbika SIC midziyo: kutanga kubva kune yazvino nyika uye dambudziko reWerer Sic. Sziva, J., Hayashi, S., Yonezawa, Y. & okura, H. 实现高可靠性 Sic 功率器件的挑战: 从 Sic 晶圆的现状和问题来看. Sziva, J., Hayashi, S., Yonzawa, Y. & okumura, H. Dambudziko rekuwana rusical kuvimbika muSic simba mashandiro eSIC: Kubva kuSIC 晶圆的电视和问题设计.Sziva J, Hayashi s, Yonzawa Y. Uye Onumbura H. Zvinonetsa Mukuvandudzwa Kwemidziyo Simba RakakwiriraPanguva ye 2018 Ieee International symposum pane kuvimbika fiziki (irps). (Sziva, J. Et Al. Eds.) 3b.3-1 Akazana.3-6 (Aeee, 2018).
Kim, D. & Sung, W. Yakavandudzwa pfupi-Circuit Ruggeness ye1.2kv 4h-sic mosfet ichishandisa yakadzika P-yakanyatsoitwa nekupaza mbiru. Kim, D. & Sung, W. Yakavandudzwa pfupi-Circuit Ruggeness ye1.2kv 4h-sic mosfet ichishandisa yakadzika P-yakanyatsoitwa nekupaza mbiru.Kim, D. uye Sung, v. Kuvandudza kupfupika-circuit Impunity ye1,2 km 4h-sic mosfet ichishandisa yakadzika p-yakanyatsoshandurwa nekuisa chiteshi. Kim, D. & Sung, W. 使用通过沟道注入实现的深 P 阱提高了 1.2kv 4h-Sic mosfet 的短路耐用性. Kim, D. & Sung, W. P 阱提高了 1.2kv 4h-Sic mosfetKim, D. uye Sung, v. Kuvandudza kupfupika-circuit kushivirira kwe1,2 kv 4h-sic mosfets ichishandisa yakadzika p-matsime nekupururudza kwemvura.IEEE Electronic zvishandiso zvinopihwa. 42, 1822-1825 (2021).
Skawronski M. et al. Kudzoserwa-kwakanyoreswa kufamba kwekuremara mukati-kusarura 4h-sic pn diode. J. application. Fizikisi. 92, 4699-4704 (2002).
Ha, S., Mieszkowski, P., skowronski, m. & rowland, lb dislocation kutendeuka mune 4h silicon carbide epitaxy. Ha, S., Mieszkowski, P., skowronski, m. & rowland, lb dislocation kutendeuka mune 4h silicon carbide epitaxy.Ha s, meszkowski P., skowronski m. naRowland lb dislocation shanduko pakati pe4h silicon carbide epitaxy. Ha, S., Mieszkowski, P., skowronski, m. & rowland, lb 4h 碳化硅外延中的位错转换. Ha, S., Mieszkowski, P., skowronski, m. & rowland, lb 4h Ha, s., meszkowski, P., skowronski, m. & rowland, lbDislocation transition 4h muSilicon carbide epitaxy.J. Crystal. Kukura 244, 257-266 (2002).
Skowronski, M. & Ha, S. Degradation yeHexagonal Silicon-Carbide-yakavakirwa bhurawu-bhurawuti midziyo. Skowronski, M. & Ha, S. Degradation yeHexagonal Silicon-Carbide-yakavakirwa bhurawu-bhurawuti midziyo.Skawronski M. naHa S. Degradation yeHoxagonal Bipolit midziyo yakavakirwa pane silicon carbide. Skawronski, M. & Ha, S. 六方碳化硅基双极器件的降解. Skowronski M. & ha S.Skawronski M. naHa S. Degradation yeHoxagonal Bipolit midziyo yakavakirwa pane silicon carbide.J. application. Fizikisi 99, 011101 (2006).
Agarwal, A., Fatima, H., Honey, S. & Ryu, s. Agarwal, A., Fatima, H., Honey, S. & Ryu, s.Agarwal A., Fatima H., Heini S. naRyu S. Agarwal, A., Fatima, H., Honey, S. & Ryu, s. Agarwal, A., Fatima, H., Honey, S. & Ryu, s.Agarwal A., Fatima H., Heini S. naRyu S.Chishandiso chitsva chechisimba chechisimba-voltage sic simba masimba mosfets. IEEE Electronic zvishandiso zvinopihwa. 28, 587-589 (2007).
Caldwell, JD, Stahlbush, Ancona, MG, Glombo, Glombo, Hobart, KD pane iyo Yekutyaira Yekutyaira Yenzvimbo Yekudzvanya Yakatadza mu4h-Sic. Caldwell, JD, Stahlbush, Ancona, MG, Glombo, Glombo, Hobart, KD pane iyo Yekutyaira Yekutyaira Yenzvimbo Yekudzvanya Yakatadza mu4h-Sic.Caldwell, JD, Stalbush, Ancona, MG, Glemaki, Oj, uye Hobart, KD pane iyo Simba rekutyaira-rakamisikidzwa kufambisa mhomha mu4h-sic. Caldwell, JD, Stahlbush, Ra, Ancona, MG, Glombocti, OJ & Hobart, KD 关于 4h-Sic 中复合引起的层错运动的驱动力. Caldwell, JD, Stahlbush, Ra, Ancona, MG, Glombocti, OJ & Hobart, KDCaldwell, JD, Stalbush, Ancona, MG, Glemaki, Oj, uye Hobart, Pobart, pamushonga wekutyairaJ. application. Fizikisi. 108, 044503 (2010).
Iijima, A. & Kimoto, T. Electronic Energy Model ye Single Shockley Stacky Kugadziriswa Mune 4h-Sic makristuru. Iijima, A. & Kimoto, T. Electronic Energy Model ye Single Shockley Stacky Kugadziriswa Mune 4h-Sic makristuru.Iijima, a. naKimoto, T. Electron-Energy Model yekuumbwa kwehurongwa hwekugadzira kweShockley kurongedza mu4h-sic makristasi. Iijima, A. & Kimoto, Tic-Sic 晶体中单 Shockley 堆垛层错形成的电子能量模型. Iijima, A. & Kimoto, T. Electronic Energy Model ye Single Shockley Stacky Kugadziriswa Kuisa Misoro mu4H-SIC Crystal.Iijima, A. naKimoto, T. Electron-Energy Model yekuumbwa kweimwe hurema kushongedza mu4h-stic makristasi.J. application. Fizikisi 126, 105703 (2019).
Iijima, A. & Kimoto, T. fungidziro yemamiriro ekutsoropodza ekuwedzera / kupokana kweimwe single shockley yekuisa zvikanganiso mu4h-sic pin diode. Iijima, A. & Kimoto, T. fungidziro yemamiriro ekutsoropodza ekuwedzera / kupokana kweimwe single shockley yekuisa zvikanganiso mu4h-sic pin diode.Iijima, A. uye Kimoto, T. fungidziro yeiyo yakaoma mamiriro ekuwedzera / kumanikidzwa kweimwe shockley packing mu4h-sic pin-diode. Iijima, A. & Kimoto, T. 估计 4h-Sic Pin 【SHOCKLEY 堆垛层错膨胀 / 收缩的临界条件. Iijima, A. & Kimoto, T. fungidziro yeimwe shockley yekuisa kuwanda kwekuwedzera / contraction mamiriro mu4h-sic pin diode.Iijima, A. uye Kimoto, T. fungidziro yemamiriro ekutsoropodza ekuwedzera / kumanikidzwa kweimwe kuremara kurongedza kusuruvaraapplication fizikisi Wright. 116, 092105 (2020).
Mannen, Y., Shimada, K., Asada, K. & Ohtum, N. Quantum Vanyatsoita Shockley Stacky Stacky Stacky Stacky Stacky Stacky Pasi peVasic Cry Bycal Mannen, Y., Shimada, K., Asada, K. & Ohtum, N. Quantum Vanyatsoita Shockley Stacky Stacky Stacky Stacky Stacky Stacky Pasi peVasic Cry BycalMannen Y., Shimada K., Asada K., naOtani N. A Quantum Vanyatsogadziriswa Kwemhosva Yekutadza Kuisa Chipengo mune 4H-Sic Crystal Unequilibrium mamiriro.Mannen Y., Shimada K., Asada K. naOtani N. Quantum Inll Interration Modection yeSecurity Stacky Stacky Stacky Kuisa Kugadzirisa Kugadzirisa Kugadzirisa Kugadzirisa Kugadzirisa Kuisa Mamiriro mana eCryStles J. application. Fizikisi. 125, 085705 (2019).
Galeckas, A., Linnros, J. & Piluz, P. Yokudzokorora-Yakamisikidzwa Kuisa Zvikanganiso: Uchapupu hweMuchina weGeneral muHexAgonal Sic. Galeckas, A., Linnros, J. & Piluz, P. Yokudzokorora-Yakamisikidzwa Kuisa Zvikanganiso: Uchapupu hweMuchina weGeneral muHexAgonal Sic.Galeckas, A., Linnros, J. naPirouz, P. Expubination-Yakarongedzwa Kurongedza Kuremara: Uchapupu hweMuchina Wakajaira muHexagonal Sic. Galeckas, A., Linnros, J. & PIROUZ, P. 复合诱导的堆垛层错: 六方 Sic 中一般机制的证据. Galeckas, A., Linnros, J. & Piiroz, P. Uchapupu hweMuchina weMuchina weComposite Inting Stace: 六方 SIC.Galeckas, A., Linnros, J. naPirouz, P. Expubination-Yakarongedzwa Kurongedza Kuremara: Uchapupu hweMuchina Wakajaira muHexagonal Sic.Fizikisi Mufundisi Wright. 96, 025502 (2006).
Ishiikawa, y.Ishiikawa, y., m. sudo, y.-z beam kurira.Ishiikawa, y., sudo m., y.-z psychology.Bhokisi, ю., м.. Судо, y.-z Chem., J. Chem., 123, 225101 (2018).
Kato, M., Kathira, S., Ichiikawa, Y., Harada, S. & Kimoto, T. Kuongorora kwekutakura kwekutakura Kato, M., Kathira, S., Ichiikawa, Y., Harada, S. & Kimoto, T. Kuongorora kwekutakura kwekutakuraKato M., Kathira S., Itikawa Y., Harada Y., Harada S. Uye Kimoto T. Kuongorora kwekutakura mutakuri mune imwechete Kato, M., Kathira, S., Ichikawa, Y., Harada, S. & Kimoto, T. 单 SHOCKLEY 堆垛层错和 4H-Sic 部分位错中载流子复合的观察. Kato, M., Kathira, S., Ichikawa, Y., Harada, S. & Kimoto, T. 单 SHOCKLEL STATLING STATING 和 4H-SIC chikamu 位错中载流子去生的可以.Kato M., Kathira S., Itikawa Y., Harada Y., Harada S. Uye Kimoto T. Kuongorora kwekutakura mutakuri mune imwecheteJ. application. Fizikisi 124, 095702 (2018).
Kimoto, T. & Watanabe, H. Defect Engjinari muSic Tekinoroji yePamusoro-voltage Simba Midziyo. Kimoto, T. & Watanabe, H. Defect Engjinari muSic Tekinoroji yePamusoro-voltage Simba Midziyo.Kimoto, T.Narabe, H. Kubudirira kwehurongwa hweSIC Tekinoroji yePamusoro-voltage Simba Midziyo. Kimoto, T. & Watanabe, H. 用于高压功率器件的 Sic 技术中的缺陷工程. Kimoto, T. & Watanabe, H. Defect Engjinari muSic Tekinoroji yePamusoro-voltage Simba Midziyo.Kimoto, T.Narabe, H. Kubudirira kwehurongwa hweSIC Tekinoroji yePamusoro-voltage Simba Midziyo.application fizikisi inoratidza 13, 120101 (2020).
Zhang, Z. & sudarshan, ts Basal ndege dislocation-isina epitaxy of silicon carbide. Zhang, Z. & sudarshan, ts Basal ndege dislocation-isina epitaxy of silicon carbide.Zhang z. uye sudarshani ts dislocation-yemahara epitaxy of silicon carbide mune bhasili ndege. Zhang, Z. & sudarshan, ts 碳化硅基面无位错外延. Zhang, Z. & Sudarshan, TsZhang z. uye sudarshani ts dislocation-emahara epitaxy of silicon carbide basal ndege.chirevo. Fizikisi. Wright. 87, 151913 (2005).
Zhang, Z., Moulton, E. & sudarshan, ts Mechanism yekubvisa Basal ndege dislocations mune sic yakatetepa mafirimu ne epitaxy substate. Zhang, Z., Moulton, E. & sudarshan, ts Mechanism yekubvisa Basal ndege dislocations mune sic yakatetepa mafirimu ne epitaxy substate.Zhang Z., Moulton E. Uye sudarshan ts mechanism yekubviswa kweiyo base ndege discation mumafirimu akatetepa neye epitaxy substate. Zhang, Z., Moulton, E. & sudarshan, ts 通过在蚀刻衬底上外延消除 Sic 薄膜中基面位错的机制. Zhang, Z., Moulton, E. & sudarshan, ts iyo Mechanism yekubviswa kweiyo sic yakaonda firimu nekuita subting substrate.Zhang Z., Moulton E. Uye sudarshan ts mechanism yekubviswa kweiyo base ndege discation mune yeSIC yakaonda mafirimu ne epitaxy onetcheter.application fizikisi Wright. 89, 081910 (2006).
Shtalbush re et al. Kukanganisa kwekukura kunotungamira kuderera muBasal ndege discation mukati me4h-sic epitaxy. chirevo. Fizikisi. Wright. 94, 041916 (2009).
Zhang, X. & Tsuchid, H. Kutendeuka kweBasal ndege dislocations kuti udzivise DEELCATION Zhang, X. & Tsuchid, H. Kutendeuka kweBasal ndege dislocations kuti udzivise DEELCATIONZhang, X. Uye Thuchida, H. Shanduko yeBasal ndege dislocations mukudzvanywa madhiri dislocations mu4h-sic epitaxial laders nekushisa kwakanyanya kunosimbisa. Zhang, X. & Tsuchid, H. 通过高温退火将 4h-sic 外延层中的基面位错转化为螺纹刃位错. Zhang, X. & Tsuchid, H. 通过高温退火将 4h-sicZhang, X. Uye Thuchida, H. Shanduko yeBase ndege discation muFiling Edge dislocations mu4h-sic Epitaxial Layers nekudziya kwakanyanya kunoshamisa.J. application. Fizikisi. 111, 123512 (2012).
Rwiyo, H. & sudarshan, ts Basaril ndege dislocation padhuze neEpillayer / Substrate muECEFACE Kukura kwe4 ° off-axis 4h-sic. Rwiyo, H. & sudarshan, ts Basaril ndege dislocation padhuze neEpillayer / Substrate muECEFACE Kukura kwe4 ° off-axis 4h-sic.Rwiyo, H. Uye sudarshan, ts shanduko yeBasal ndege dislocations padhuze neEpitaxial Layer yeOffer panguva off-axis Epitaxial kukura kwe4h-sic. Rwiyo, H. & sudarshan, ts 在 4 ° 在 4h-sic 外延生长中外延层 / 衬底界面附近的基底平面位错转换. Rwiyo, H. & sudarshan, ts】 4 ° 在 4h-sic Rwiyo, H. & Sudarshan, TsRonga Kuzivisa Shanduko yeiyo Substrate padhuze neEpitaxial Layer leadJ. Crystal. Kukura 371, 94-101 (2013).
Konishi, k. et al. Pakunyepedzera ikozvino J. application. Fizikisi. 114, 014504 (2013).
Konishi, k. et al. Dhizaina epitaxial zviyero zvekuputika zvisiri-zvinosvibisa sic mosfets nekuona yakawedzera kusunga nzvimbo dzisingakwanisi Aip Advanced 12, 035310 (2022).
Lin, S. et Al. Simba reBasal ndege discation preloctures pane yekupararira kweimwe shockley-mhando yekuisa mhosva yekutadza nguva yekuora kwe4h-sic pin diode. Japani. J. application. Fizikisi. 57, 04FR07 (2018).
Tahara, T., et al. Iyo pfupi diki yekutakura mupenyu muNitrogen-hupfumi 4h-Sic Epilayers inoshandiswa kudzvinyirira kutadza kukanganisa muPIN Diode. J. application. Fizikisi. 120, 115101 (2016).
Tahara, T. et Al. Yakamisikidzwa kutakura kutakura nzvimbo yekuvhara kweimwe shockley stacky kutadza kukanganisa muridzo mune 4h-sic pin diode. J. application. Fizikisi 123, 025707 (2018).
Mae, S., Tawara, T., Tsuchid, H. & Kato, M. Microscopic FCA Syple-Yakagadziriswa Kutakurwa Kwekutakura Chiyero muSIC. Mae, S., Tawara, T., Tsuchid, H. & Kato, M. Microscopic FCA Syple-Yakagadziriswa Kutakurwa Kwekutakura Chiyero muSIC.Mei, S., Tawara, T., Tsuchida, H. naKato, M. Fca microscopic system-yakagadziriswa yekutakura huwandu hwehupenyu hwehupenyu muSilicon carbide. Mae, S., Tawara, T., Tsuchid, H. & Kato, M. 用于 Sic 中深度分辨载流子寿命测量的显微 fca 系统. Mae, S., Tawara, T., Tucuida, H. & Kato, M. YeSIC yepakati-kudzika kweLCATime Kuyera】 FCA system.Mei S., Tawara T., Tuchida H. uye Kato M. Micro-FCA System yeakadzika-yakagadziriswa yekutakura huwandu hwehupenyu muSilicon carbide.Agma Mat Mat Mata Science foramu 924, 269-272 (2018).
Hirayama, T. et Al. Kudzika kwekugoverwa kwehupenyu hwekutakura mudenga Chinja nesainzi. mita. 91, 123902 (2020).
Kutumira Nguva: Nov-06-2022
