Urakoze gusura Kamere.com.Verisiyo ya mushakisha ukoresha ifite inkunga ya CSS igarukira.Kuburambe bwiza, turagusaba ko ukoresha mushakisha ivuguruye (cyangwa ugahagarika uburyo bwo guhuza uburyo muri Internet Explorer).Hagati aho, kugirango tumenye gukomeza gushyigikirwa, tuzatanga urubuga rudafite imiterere na JavaScript.
4H-SiC yagurishijwe nk'ibikoresho by'ibikoresho bya semiconductor.Nyamara, igihe kirekire cyo kwizerwa cyibikoresho bya 4H-SiC ni inzitizi kubikorwa byabo byinshi, kandi ikibazo cyingenzi cyo kwizerwa cyibikoresho bya 4H-SiC ni bipolar degradation.Uku gutesha agaciro guterwa nikibazo kimwe cya Shockley cyo gutondekanya (1SSF) ikwirakwizwa ryindege yibanze muri kristu ya 4H-SiC.Hano, turasaba uburyo bwo guhagarika kwaguka kwa 1SSF dushyira proton kuri wafers ya 4H-SiC.PiN ya diode yahimbwe kuri wafers hamwe no gushiramo proton yerekanaga ibintu birasa-voltage biranga nka diode idafite proton.Ibinyuranye, kwaguka kwa 1SSF guhagarikwa neza muri diode ya proton yatewe.Gutyo, gushira proton muri 4H-SiC epitaxial wafer ni uburyo bwiza bwo guhagarika iyangirika rya bipolar yangiza ibikoresho bya semiconductor ya 4H-SiC mugihe gikomeza imikorere yibikoresho.Igisubizo kigira uruhare mugutezimbere ibikoresho byizewe cyane 4H-SiC.
Carbide ya Silicon (SiC) irazwi cyane nkibikoresho byifashishwa mu gukoresha imbaraga nyinshi, ibikoresho byinshi bya semiconductor bishobora gukorera ahantu habi1.Hariho polytypes nyinshi za SiC, murizo 4H-SiC ifite ibikoresho byiza bya semiconductor ibikoresho byumubiri nka moteri ya elegitoronike nini hamwe n’umuriro w'amashanyarazi ukomeye.Wafer ya 4H-SiC ifite umurambararo wa santimetero 6 kuri ubu iracuruzwa kandi ikoreshwa mu gukora cyane ibikoresho bikoresha ingufu za semiconductor3.Sisitemu yo gukurura ibinyabiziga byamashanyarazi na gari ya moshi byahimbwe hakoreshejwe ibikoresho bya semiconductor ya 4H-SiC4.5.Nyamara, ibikoresho 4H-SiC biracyafite ibibazo byigihe kirekire byo kwizerwa nko gusenyuka kwa dielectric cyangwa kwizerwa ryumuzunguruko mugufi, 6,7 murimwe mubibazo byingenzi byokwizerwa ni bipolar degradation2,8,9,10,11.Uku kwangirika kwa bipolar kwavumbuwe hashize imyaka irenga 20 kandi kimaze igihe ari ikibazo muguhimba ibikoresho bya SiC.
Kwangirika kwa Bipolar biterwa nubusembwa bumwe bwa Shockley (1SSF) muri kristu ya 4H-SiC hamwe na disikuru yoherejwe nindege (BPDs) ikwirakwizwa na recombination yongerewe imbaraga zo gutandukana (REDG) 12,13,14,15,16,17,18,19.Kubwibyo, niba BPD yagutse ihagaritswe kuri 1SSF, ibikoresho byamashanyarazi 4H-SiC birashobora guhimbwa nta bipolar yangiritse.Uburyo butandukanye bwagiye buhagarika guhagarika ikwirakwizwa rya BPD, nka BPD kuri Thread Edge Dislocation (TED) ihinduka 20,21,22,23,24.Muri wafers ya SiC iheruka, BPD igaragara cyane muri substrate kandi ntabwo iri murwego rwa epitaxial kubera ihinduka rya BPD kuri TED mugihe cyambere cyo gukura kwa epitaxial.Kubwibyo, ikibazo gisigaye cyo kwangirika kwa bipolar nugukwirakwiza BPD muri substrate 25,26,27.Kwinjiza "compteur reinforcing layer" hagati ya drift layer na substrate byasabwe nkuburyo bwiza bwo guhagarika kwaguka kwa BPD muri substrate28, 29, 30, 31. Iki gipimo cyongera amahirwe yo guhuza ibice bya electron-umwobo muri epitaxial layer na SiC substrate.Kugabanya umubare wa elegitoroniki-umwobo bigabanya imbaraga zo gutwara REDG kuri BPD muri substrate, bityo igiteranyo cyo kongera imbaraga gishobora guhagarika kwangirika kwa bipolar.Twabibutsa ko kwinjiza urwego bisaba amafaranga yinyongera mugukora wafer, kandi hatabayeho gushyiramo urwego biragoye kugabanya umubare wa elegitoroniki-mwobo ukoresheje kugenzura gusa ubuzima bwabatwara ubuzima bwabo bwose.Kubwibyo, haracyakenewe cyane guteza imbere ubundi buryo bwo guhagarika kugirango tugere ku buringanire bwiza hagati yikiguzi cyo gukora ibikoresho n'umusaruro.
Kuberako kwagura BPD kuri 1SSF bisaba kugenda kwimura igice (PDs), gukubita PD nuburyo butanga ikizere cyo kubuza kwangirika kwa bipolar.Nubwo PD yometse ku byuma byavuzwe, FPDs muri substrate ya 4H-SiC iherereye ku ntera ya metero zirenga 5 uvuye hejuru ya epitaxial.Mubyongeyeho, kubera ko coefficient de diffuzione yicyuma icyo aricyo cyose muri SiC ari nto cyane, biragoye ko umwanda wibyuma ukwirakwira muri substrate34.Bitewe nubunini bwa atome nini cyane, gutera ion nabyo biragoye.Ibinyuranye, kubijyanye na hydrogène, ikintu cyoroshye cyane, ion (proton) zirashobora guterwa muri 4H-SiC kugeza ubujyakuzimu burenga 10 µm ukoresheje umuvuduko wa MeV-urwego.Kubwibyo, niba gushiramo proton bigira ingaruka kuri PD, noneho birashobora gukoreshwa muguhagarika ikwirakwizwa rya BPD muri substrate.Ariko, gushiramo proton birashobora kwangiza 4H-SiC bigatuma igabanuka ryibikoresho 37,38,39,40.
Kugira ngo utsinde kwangirika kw'ibikoresho bitewe no gushyirwaho proton, annealing yubushyuhe bwo hejuru ikoreshwa mugusana ibyangiritse, bisa nuburyo bwa annealing bukunze gukoreshwa nyuma yo guterwa ion kwakirwa mugutunganya ibikoresho1, 40, 41, 42. Nubwo ion mass spectrometrie ya kabiri (SIMS) 43 ifite raporo ya hydrogène ikwirakwizwa kubera ubushyuhe bwo hejuru, birashoboka ko ubwinshi bwa atome ya hydrogène hafi ya FD bidahagije kugirango umenye PR ukoresheje SIMS.Kubwibyo, muri ubu bushakashatsi, twashizemo proton muri wafers ya 4H-SiC mbere yo guhimba ibikoresho, harimo nubushyuhe bwo hejuru.Twifashishije diode ya PiN nkibikoresho byubushakashatsi hanyuma tuyihimba kuri proton-yatewe na 4H-SiC epitaxial wafers.Twahise tureba ibiranga volt-ampere kugirango twige kwangirika kwimikorere yibikoresho kubera inshinge za proton.Nyuma, twabonye kwaguka kwa 1SSF mumashusho ya electroluminescence (EL) nyuma yo gukoresha ingufu z'amashanyarazi kuri diode ya PiN.Hanyuma, twemeje ingaruka zo gutera proton muguhagarika kwaguka kwa 1SSF.
Ku mutini.Igishushanyo 1 kirerekana icyerekezo - voltage kiranga (CVCs) ya diode ya PiN mubushyuhe bwicyumba mu turere hamwe no kudashyiramo proton mbere yumuriro wa pulsed.PiN ya diode hamwe ninshinge ya proton yerekana ibimenyetso byo gukosora bisa na diode idafite inshinge za proton, nubwo ibiranga IV bisangiwe hagati ya diode.Kugirango twerekane itandukaniro riri hagati yimiterere yo gutera inshinge, twateguye inshuro ya voltage kumurongo wimbere wa 2.5 A / cm2 (ihwanye na 100 mA) nkumugambi wibarurishamibare nkuko bigaragara ku gishushanyo cya 2. Umurongo ugereranijwe no kugabana bisanzwe nawo uhagarariwe n'umurongo utudomo.umurongo.Nkuko bigaragara kuri mpinga yimirongo, on-resistance yiyongeraho gato kuri dosiye ya proton ya 1014 na cm 1016 cm-2, mugihe diode ya PiN hamwe na proton ikabije ya cm 1012 cm-2 yerekana ibintu bisa nkaho bitatewe na proton. .Twakoze kandi proton nyuma yo guhimba diode ya PiN itagaragaje electroluminescence imwe kubera ibyangijwe no guterwa proton nkuko bigaragara ku gishushanyo S1 nkuko byasobanuwe mubushakashatsi bwambere 37,38,39.Kubwibyo, gufatira kuri 1600 ° C nyuma yo gushyirwaho Al ion nigikorwa cya ngombwa cyo guhimba ibikoresho kugirango ukoreshe Al yakira, ishobora gusana ibyangiritse byatewe na proton, bigatuma CVC iba imwe hagati ya diode ya proton PiN yatewe kandi idatewe. .Imiyoboro ihindagurika kuri -5 V nayo igaragara mu gishushanyo S2, nta tandukaniro rikomeye riri hagati ya diode hamwe no gutera inshinge za proton.
Volt-ampere iranga PiN ya diode hamwe na proton yatewe mubushyuhe bwicyumba.Umugani werekana igipimo cya proton.
Umuvuduko wa voltage kumurongo utaziguye 2.5 A / cm2 kuri diode ya PiN hamwe na proton yatewe kandi idatewe.Umurongo utudomo uhuye nibisanzwe bikwirakwizwa.
Ku mutini.3 yerekana ishusho ya EL ya diode ya PiN hamwe nubucucike bwa 25 A / cm2 nyuma ya voltage.Mbere yo gukoresha imitwaro ihindagurika, uturere twijimye twa diode ntabwo twagaragaye, nkuko bigaragara ku gishushanyo cya 3. C2.Ariko, nkuko bigaragara ku gishushanyo.3a, muri diode ya PiN itatewe na proton, uturere twinshi twijimye twijimye dufite impande zoroheje byagaragaye nyuma yo gukoresha amashanyarazi.Uturere twijimye tumeze nkinkoni tugaragara mumashusho ya EL kuri 1SSF kuva kuri BPD muri substrate 28,29.Ahubwo, amakosa amwe n'amwe yagutse yagaragaye muri diode ya PiN hamwe na proton yatewe, nkuko bigaragara ku gishushanyo cya 3b - d.Twifashishije imiterere ya X-ray, twemeje ko PRs ishobora kuva muri BPD ikajya munsi ya substrate kuri peripheri yimikoranire muri diode ya PiN itatewe inshinge (Ishusho ya 4: iyi shusho udakuyeho electrode yo hejuru (ifoto, PR munsi ya electrode ntabwo igaragara). Kubwibyo, ahantu hijimye mwishusho ya EL ihuye na 1SSF BPD yaguye muri substrate. Ahantu hijimye (ibihe bitandukanye EL amashusho ya PiN diode atatewe inshinge za proton kandi yatewe kuri cm 1014 cm-2) nayo irerekanwa mumakuru yinyongera.
EL amashusho ya diode ya PiN kuri 25 A / cm2 nyuma yamasaha 2 yumuvuduko wamashanyarazi (a) udatewe na proton hamwe na dosiye yatewe (b) cm 1012 cm-2, (c) cm 1014 cm-2 na (d) cm 1016 cm-2 proton.
Twabaze ubucucike bwagutse bwa 1SSF tubara ahantu hijimye hafite impande zijimye muri diode eshatu za PiN kuri buri kintu, nkuko bigaragara ku gishushanyo cya 5. Ubucucike bwagutse bwa 1SSF buragabanuka hamwe no kwiyongera kwa proton, ndetse no ku kigero cya cm 1012 cm-2, ubucucike bwagutse 1SSF buri hasi cyane ugereranije na diode ya PiN idatewe.
Kwiyongera k'ubucucike bwa diode ya SF PiN hamwe no kudashyiramo proton nyuma yo gupakira hamwe na pulsed (buri leta yarimo diode eshatu zipakiye).
Kugabanya ubuzima bwabatwara ubuzima nabyo bigira ingaruka kumagambo yo kwaguka, kandi inshinge ya proton igabanya ubuzima bwabatwara 32,36.Twabonye ubuzima bwabatwara mubuzima bwa epitaxial 60 µm yuburebure hamwe na proton yatewe cm 1014 cm-2.Kuva mubuzima bwambere bwabatwara, nubwo gushiramo bigabanya agaciro kugeza ~ 10%, annealing nyuma iragarura ~ 50%, nkuko bigaragara ku gishushanyo S7.Kubwibyo, ubuzima bwabatwara ubuzima bwose, bwagabanutse kubera proton yatewe, bigarurwa nubushyuhe bwo hejuru.Nubwo kugabanuka kwa 50% mubuzima bwabatwara nabyo bihagarika ikwirakwizwa ryamakosa yo gutondekanya, ibiranga I - V, ubusanzwe biterwa nubuzima bwabatwara, byerekana itandukaniro rito hagati ya diyode yatewe kandi idatewe.Kubwibyo, twizera ko inanga ya PD igira uruhare mukubuza kwaguka 1SSF.
Nubwo SIMS itabonye hydrogène nyuma yo gushyirwa kuri 1600 ° C, nkuko byavuzwe mubushakashatsi bwibanze, twabonye ingaruka zo guterwa proton muguhagarika kwaguka kwa 1SSF, nkuko bigaragara ku gishushanyo 1 na 4. 3, 4. Kubwibyo, turizera ko PD ihambiriwe na atome ya hydrogène ifite ubucucike buri munsi yimipaka ya SIMS (2 × 1016 cm-3) cyangwa inenge zatewe no guterwa.Twabibutsa ko tutigeze twemeza ko kwiyongera kwa leta biterwa no kuramba kwa 1SSF nyuma yumutwaro urenze.Ibi birashobora guterwa na ohmic contact zidatunganijwe zakozwe dukoresheje inzira zacu, zizakurwaho mugihe cya vuba.
Mu gusoza, twateje imbere uburyo bwo kuzimya BPD kuri 1SSF muri diode ya 4H-SiC PiN dukoresheje gushiramo proton mbere yo guhimba ibikoresho.Kwangirika kwa I - V kuranga mugihe cyo gutera proton nta gaciro bifite, cyane cyane kuri dose ya proton ya cm 1012 - 2, ariko ingaruka zo guhagarika kwaguka kwa 1SSF ni ngombwa.Nubwo muri ubu bushakashatsi twahimbye 10 µm umubyimba wa PiN ya diode hamwe na proton yatewe kuri ubujyakuzimu bwa 10 µm, biracyashoboka kurushaho kunoza uburyo bwo guterwa no kubishyira mu guhimba ubundi bwoko bwibikoresho bya 4H-SiC.Ibiciro byinyongera muguhimba ibikoresho mugihe cyo gutera proton bigomba gutekerezwa, ariko bizasa nkibya aluminium ion yatewe, aribwo buryo nyamukuru bwo guhimba ibikoresho byamashanyarazi 4H-SiC.Gutyo, gushira proton mbere yo gutunganya ibikoresho nuburyo bushoboka bwo guhimba ibikoresho bya bipolar 4H-SiC bitangirika.
Icyerekezo cya 4-n-ubwoko bwa 4H-SiC wafer ifite epitaxial layer yuburebure bwa 10 µm hamwe n’umuterankunga wa doping wa cm 1 × 1016 cm - 3 yakoreshejwe nkicyitegererezo.Mbere yo gutunganya igikoresho, H + ion zashyizwe mu isahani hamwe n’ingufu yihuta ya 0,95 MeV ku bushyuhe bw’icyumba kugeza ku bujyakuzimu bwa mm 10 ku nguni isanzwe ku isahani.Mugihe cyo gutera proton, hakoreshejwe mask ku isahani, kandi isahani yari ifite ibice bitarimo kandi bifite urugero rwa proton ya 1012, 1014, cyangwa cm 1016 cm-2.Hanyuma, Al ion zifite dosiye ya proton ya cm 1020 na 1017 cm - 3 zatewe hejuru ya wafer yose kugeza ubujyakuzimu bwa 0–0.2 µm na 0.2–0.5 µm uhereye hejuru, hanyuma hagakurikiraho kuri 1600 ° C kugirango habeho capa ya karubone Ifishi ya ap.-ubwoko.Icyakurikiyeho, uruhande rwinyuma Ni rwashyizwe kumurongo wa substrate, mugihe 2.0 mm × 2.0 mm ya ti / Al ya ti / Al imbere ihuza ibice byakozwe na Photolithography hamwe nigishishwa cyashyizwe kuruhande rwa epitaxial.Hanyuma, guhuza annealing bikorwa mubushyuhe bwa 700 ° C.Nyuma yo gukata wafer muri chip, twakoze kuranga stress no kuyishyira mubikorwa.
Ibiranga I - V biranga diode yahimbwe byagaragaye hakoreshejwe isesengura rya HP4155B ya semiconductor.Nkumuriro wamashanyarazi, milisegonda 10 ya pulsed ya 212.5 A / cm2 yatangijwe mumasaha 2 kumurongo wa pulses 10 / amasegonda.Mugihe twahisemo ubucucike buke cyangwa inshuro nyinshi, ntitwabonye kwaguka kwa 1SSF ndetse no muri diode ya PiN tutatewe inshinge.Mugihe amashanyarazi akoreshwa, ubushyuhe bwa diode ya PiN ni 70 ° C nta gushyushya nkana, nkuko bigaragara ku gishushanyo S8.Amashusho ya Electroluminescent yabonetse mbere na nyuma yumuriro wamashanyarazi kuri ubu bwa 25 A / cm2.Synchrotron yerekana ubwatsi bwo kurisha X-ray topografiya ukoresheje urumuri rwa X-ray (λ = 0.15 nm) mukigo cya Aichi Synchrotron Imirasire, ag vector muri BL8S2 ni -1-128 cyangwa 11-28 (reba reba 44 kubisobanuro birambuye) .).
Umuvuduko wa voltage kumurongo wimbere wa 2.5 A / cm2 ukuramo intera ya 0.5 V mumitini.2 ukurikije CVC ya buri leta ya diode ya PiN.Duhereye ku gaciro kagereranijwe k'ibibazo Vave hamwe no gutandukana bisanzwe σ by'imihangayiko, turategura umugabane usanzwe wo kugabana muburyo bw'umurongo utudomo ku gishushanyo cya 2 dukoresheje ikigereranyo gikurikira:
Werner, MR & Fahrner, WR Isubiramo kubikoresho, microsensor, sisitemu nibikoresho byubushyuhe bwo hejuru hamwe nibidukikije bikabije. Werner, MR & Fahrner, WR Isubiramo kubikoresho, microsensor, sisitemu nibikoresho byubushyuhe bwo hejuru hamwe nibidukikije bikabije.Werner, MR na Farner, WR Incamake y'ibikoresho, microsensor, sisitemu n'ibikoresho bya porogaramu mu bushyuhe bwo hejuru hamwe n'ibidukikije bikaze. Werner, MR & Fahrner, WR 对 用于 高温 和 恶劣 环境 的 的 材料 微 传感器 、 系统 和 设备 的 评论。 Werner, MR & Fahrner, WR Gusubiramo ibikoresho, microsensor, sisitemu nibikoresho byubushyuhe bwo hejuru hamwe nibidukikije bidukikije.Werner, MR na Farner, WR Incamake y'ibikoresho, microsensor, sisitemu n'ibikoresho bya porogaramu ku bushyuhe bwinshi no mu bihe bibi.IEEE Trans.Ibyuma bya elegitoroniki.48, 249–257 (2001).
Kimoto, T. & Cooper, JA Shingiro rya Tekinoroji ya Carbide ya Silicon Yibanze Yubuhanga bwa Silicon Carbide: Gukura, Kuranga, Ibikoresho nibisabwa Vol. Kimoto, T. & Cooper, JA Shingiro rya Tekinoroji ya Carbide ya Silicon Yibanze Yubuhanga bwa Silicon Carbide: Gukura, Kuranga, Ibikoresho nibisabwa Vol.Kimoto, T. na Cooper, JA Ibyingenzi bya tekinoroji ya Carbide ya Silicon Ibyingenzi bya tekinoroji ya Carbide: Gukura, Ibiranga, Ibikoresho na Porogaramu Vol. Kimoto, T. & Cooper, JA 碳化硅 技术 基础 碳化硅 技术 基础 ： 增长 、 表征 、 设备 和 应用 卷。 Kimoto, T. & Cooper, JA Carbone base silicon ikorana buhanga rya Carbone base tekinoroji ya silicon: gukura, ibisobanuro, ibikoresho nubunini bwa porogaramu.Kimoto, T. na Cooper, J. Ibyibanze bya Tekinoroji ya Carbide ya Silicon Ibyingenzi byubuhanga bwa Silicon Carbide: Gukura, Ibiranga, Ibikoresho nibisabwa Vol.252 (Wiley Singapore Pte Ltd, 2014).
Veliadis, V. Ubucuruzi bunini bwa SiC: Imiterere Quo n'inzitizi zo gutsinda.alma mater.siyanse.Ihuriro 1062, 125–130 (2022).
Broughton, J., Smet, V., Tummala, RR & Joshi, YK Gusubiramo tekinoroji yo gupakira amashyuza ya elegitoroniki y’amashanyarazi mu rwego rwo gukurura. Broughton, J., Smet, V., Tummala, RR & Joshi, YK Gusubiramo tekinoroji yo gupakira amashyuza ya elegitoroniki y’amashanyarazi mu rwego rwo gukurura.Broughton, J., Smet, V., Tummala, RR na Joshi, YK Incamake yubuhanga bwo gupakira amashyuza ya elegitoroniki y’amashanyarazi agamije gukurura. Broughton, J., Smet, V., Tummala, RR & Joshi, YK 用于 牵引 目的 的 汽车 电力 电子 热 封装 技术 的 回顾。 Broughton, J., Smet, V., Tummala, RR & Joshi, YKBroughton, J., Smet, V., Tummala, RR na Joshi, YK Incamake yubuhanga bwo gupakira amashyuza kubikoresho bya elegitoroniki yimodoka igamije gukurura.J. Electron.Amapaki.inzira.ASME 140, 1-11 (2018).
Sato, K., Kato, H. & Fukushima, T. Iterambere rya SiC ryakoresheje sisitemu yo gukurura ibisekuru bizaza Shinkansen ya gari ya moshi yihuta. Sato, K., Kato, H. & Fukushima, T. Iterambere rya SiC ryakoresheje sisitemu yo gukurura ibisekuru bizaza Shinkansen ya gari ya moshi yihuta.Sato K., Kato H. na Fukushima T. Gutezimbere uburyo bwa sisitemu yo gukurura SiC kubisekuruza bizaza byihuta bya gari ya moshi Shinkansen.Sato K., Kato H. na Fukushima T. Iterambere rya sisitemu yo gukurura kubikorwa bya SiC kubisekuruza bizakurikiraho Byihuta Gariyamoshi.Umugereka wa IEEJ J. Ind. 9, 453–459 (2020).
Senzaki, J., Hayashi, S., Yonezawa, Y. & Okumura, H. Imbogamizi zo kumenya ibikoresho byamashanyarazi byizewe cyane bya SiC: Uhereye kumiterere n'ibibazo bya waferi ya SiC. Senzaki, J., Hayashi, S., Yonezawa, Y. & Okumura, H. Imbogamizi zo kumenya ibikoresho byamashanyarazi byizewe cyane bya SiC: Uhereye kumiterere n'ibibazo bya waferi ya SiC.Senzaki, J., Hayashi, S., Yonezawa, Y. na Okumura, H. Ibibazo mu ishyirwa mu bikorwa ry’ibikoresho by’amashanyarazi byizewe cyane bya SiC: guhera kuri leta iriho n’ikibazo cya wafer SiC. Senzaki, J., Hayashi, S., Yonezawa, Y. & Okumura, H. 实现 高 可靠性 SiC 功率 器件 的 挑战 ： 从 SiC 晶圆 的 现状 和 问题 来看。 Senzaki, J., Hayashi, S., Yonezawa, Y. & Okumura, H. Ikibazo cyo kugera ku kwizerwa gukomeye mubikoresho byamashanyarazi bya SiC: kuva SiC 晶圆 的 电视 和 问题 设计。Senzaki J, Hayashi S, Yonezawa Y. na Okumura H. Inzitizi mugutezimbere ibikoresho byamashanyarazi byizewe bishingiye kuri karubone ya silicon: gusubiramo imiterere nibibazo bifitanye isano na waferi ya silicon.Mu nama mpuzamahanga ya IEEE ya 2018 kuri fiziki yizewe (IRPS).(Senzaki, J. n'abandi.) 3B.3-1-3B.3-6 (IEEE, 2018).
Kim, D. & Sung, W. Kunoza imiyoboro ngufi ya 1.2kV 4H-SiC MOSFET ukoresheje P-nziza yimbitse ishyirwa mubikorwa. Kim, D. & Sung, W. Kunoza imiyoboro ngufi ya 1.2kV 4H-SiC MOSFET ukoresheje P-nziza yimbitse ishyirwa mubikorwa.Kim, D. na Sung, V. Kunoza ubudahangarwa bwumuzunguruko mugufi kuri 1.2 kV 4H-SiC MOSFET ukoresheje P-nziza yimbitse yashyizwe mubikorwa no gushyiramo umuyoboro. Kim, D. & Sung, W. 使用 通过 沟道 注入 实现 的 深 P 阱 提高 了 1.2kV 4H-SiC MOSFET 的 短路 耐用 性。 Kim, D. & Sung, W. P 阱 提高 了 1.2kV 4H-SiC MOSFETKim, D. na Sung, V. Kunoza kwihanganira imiyoboro ngufi ya 1.2 kV 4H-SiC MOSFETs ukoresheje P-mariba yimbitse ukoresheje umuyoboro.IEEE Ibikoresho bya elegitoronike Reka.42, 1822–1825 (2021).
Skowronski M. n'abandi.Kwiyubaka-byongerewe imbaraga zinenge muburyo bubogamye 4H-SiC pn diode.J. Gusaba.umubiri.92, 4699–4704 (2002).
Ha, S., Mieszkowski, P., Skowronski, M. & Rowland, LB Dislocation ihinduka muri 4H silicon karbide epitaxy. Ha, S., Mieszkowski, P., Skowronski, M. & Rowland, LB Dislocation ihinduka muri 4H silicon karbide epitaxy.Ha S., Meszkowski P., Skowronski M. na Rowland LB Guhindura Dislocation mugihe cya 4H silicon karbide epitaxy. Ha, S., Mieszkowski, P., Skowronski, M. & Rowland, LB 4H 碳化硅 外延 中 的 位 错 转换。 Ha, S., Mieszkowski, P., Skowronski, M. & Rowland, LB 4H Ha, S., Meszkowski, P., Skowronski, M. & Rowland, LBDislocation inzibacyuho 4H muri silicon karbide epitaxy.J. Crystal.Gukura 244, 257-2266 (2002).
Skowronski, M. & Ha, S. Gutesha agaciro ibikoresho bya bipolar ya silikoni-esheshatu. Skowronski, M. & Ha, S. Gutesha agaciro ibikoresho bya bipolar ya silikoni-esheshatu.Skowronski M. na Ha S. Gutesha agaciro ibikoresho bya bipolar esheshatu bishingiye kuri karubide ya silicon. Skowronski, M. & Ha, S. 六方 碳化硅 基 双极 器件 的 降解。 Skowronski M. & Ha S.Skowronski M. na Ha S. Gutesha agaciro ibikoresho bya bipolar esheshatu bishingiye kuri karubide ya silicon.J. Gusaba.fiziki 99, 011101 (2006).
Agarwal, A., Fatima, H., Haney, S. & Ryu, S.-H. Agarwal, A., Fatima, H., Haney, S. & Ryu, S.-H.Agarwal A., Fatima H., Heini S. na Ryu S.-H. Agarwal, A., Fatima, H., Haney, S. & Ryu, S.-H. Agarwal, A., Fatima, H., Haney, S. & Ryu, S.-H.Agarwal A., Fatima H., Heini S. na Ryu S.-H.Uburyo bushya bwo gutesha agaciro amashanyarazi menshi ya SiC MOSFETs.IEEE Ibikoresho bya elegitoronike Reka.28, 587–589 (2007).
Caldwell, JD, Stahlbush, RE, Ancona, MG, Glembocki, OJ & Hobart, KD Ku mbaraga zitwara imbaraga zo kwisubiramo ziterwa no gutondeka amakosa muri 4H - SiC. Caldwell, JD, Stahlbush, RE, Ancona, MG, Glembocki, OJ & Hobart, KD Ku mbaraga zitwara imbaraga zo kwisubiramo ziterwa no gutondeka amakosa muri 4H-SiC.Caldwell, JD, Stalbush, RE, Ancona, MG, Glemboki, OJ, na Hobart, KD Ku mbaraga zitwara recombination-iterwa no gutondekanya amakosa muri 4H-SiC. Caldwell, JD, Stahlbush, RE, Ancona, MG, Glembocki, OJ & Hobart, KD 关于 4H-SiC 中 复合 引起 的 层 错 运动 的 驱动 力。 Caldwell, JD, Stahlbush, RE, Ancona, MG, Glembocki, OJ & Hobart, KDCaldwell, JD, Stalbush, RE, Ancona, MG, Glemboki, OJ, na Hobart, KD, Ku mbaraga zitwara recombination-iterwa no gutondekanya amakosa muri 4H-SiC.J. Gusaba.umubiri.108, 044503 (2010).
Iijima, A. & Kimoto, T. Moderi yingufu za elegitoronike ya Shockley imwe ikurikirana amakosa muri kristu ya 4H-SiC. Iijima, A. & Kimoto, T. Moderi yingufu za elegitoronike ya Shockley imwe ikurikirana amakosa muri kristu ya 4H-SiC.Iijima, A. na Kimoto, T. Moderi yingufu za elegitoronike yo gukora inenge imwe ya Shockley ipakira muri kristu ya 4H-SiC. Iijima, A. & Kimoto, T. 4H-SiC 晶体 中 单 Shockley 堆垛 层 错 形成 的 电子 能量 模型。 Iijima, A. & Kimoto, T. Moderi yingufu za elegitoronike ya Shockley imwe ikurikirana amakosa muri 4H-SiC kristal.Iijima, A. na Kimoto, T. Moderi yingufu za elegitoronike yo gushiraho inenge imwe Shockley ipakira muri kristu ya 4H-SiC.J. Gusaba.fiziki 126, 105703 (2019).
Iijima, A. & Kimoto, T. Kugereranya imiterere ikomeye yo kwaguka / kugabanuka kwa Shockley imwe ikurikirana amakosa muri diode ya 4H-SiC PiN. Iijima, A. & Kimoto, T. Kugereranya imiterere ikomeye yo kwaguka / kugabanuka kwa Shockley imwe ikurikirana amakosa muri diode ya 4H-SiC PiN.Iijima, A. na Kimoto, T. Kugereranya leta ikomeye yo kwaguka / kwikuramo inenge imwe yo gupakira Shockley muri 4H-SiC PiN-diode. Iijima, A. & Kimoto, T. 估计 4H-SiC PiN 二极管 中 单个 Shockley 堆垛 层 错 膨胀 / 收缩 的 临界 条件。 Iijima, A. & Kimoto, T. Kugereranya Shockley imwe itondekanya kwaguka / kugabanuka muri 4H-SiC PiN diode.Iijima, A. na Kimoto, T. Kugereranya ibihe bikomeye byo kwaguka / kwikuramo inenge imwe ipakira Shockley muri 4H-SiC PiN-diode.Porogaramu ya fiziki Wright.116, 092105 (2020).
Mannen, Y .. Mannen, Y ..Mannen Y ..Mannen Y ..J. Gusaba.umubiri.125, 085705 (2019).
Galeckas, A., Linnros, J. & Pirouz, P. Amakosa yo gutondekanya ibintu biterwa: Ibimenyetso byuburyo rusange muri SiC esheshatu. Galeckas, A., Linnros, J. & Pirouz, P. Amakosa yo gutondekanya ibintu biterwa: Ibimenyetso byuburyo rusange muri SiC esheshatu.Galeckas, A., Linnros, J. na Pirouz, P. Inenge ziterwa no gupakira ibintu: Ibimenyetso byerekana uburyo rusange muri SiC ya Hexagonal. Galeckas, A., Linnros, J. & Pirouz, P. 复合 诱导 的 堆垛 层 错 ： 六方 SiC 中 一般 机制 的 证据。 Galeckas, A., Linnros, J. & Pirouz, P. Ibimenyetso byuburyo rusange bwububiko bwa induction stacking layer: 六方 SiC.Galeckas, A., Linnros, J. na Pirouz, P. Inenge ziterwa no gupakira ibintu: Ibimenyetso byerekana uburyo rusange muri SiC ya Hexagonal.physics Pasiteri Wright.96, 025502 (2006).
Ishikawa, Y., Sudo, M., Yao, Y.-Z. irrasiyo.Ishikawa, Y., M. Sudo, Y.-Z imirasire.Ishikawa, Y., Sudo M., Y.-Z Imitekerereze.Agasanduku, Ю., М.Yinо, Y.-Z Chem., J. Chem., 123, 225101 (2018).
Kato, M., Katahira, S., Ichikawa, Y., Harada, S. & Kimoto, T. Kwitegereza ubwikorezi bwabatwara muri Shockley imwe ikosora amakosa ndetse no gutandukana muri 4H-SiC. Kato, M., Katahira, S., Ichikawa, Y., Harada, S. & Kimoto, T. Kwitegereza ubwikorezi bwabatwara muri Shockley imwe ikosora amakosa ndetse no gutandukana muri 4H-SiC.Kato М. Kato, M., Katahira, S., Ichikawa, Y., Harada, S. & Kimoto, T. 单 Shockley 堆垛 层 错 和 4H-SiC 部分 位 错 中 载 流 子 复合 的 观察。 Kato, M., Katahira, S., Ichikawa, Y., Harada, S. & Kimoto, T. 单 Shockley yegeranye cking 4H-SiC igice 位Kato М.J. Gusaba.fiziki 124, 095702 (2018).
Kimoto, T. & Watanabe, H. Ubwubatsi bwuzuye mubuhanga bwa SiC kubikoresho byamashanyarazi menshi. Kimoto, T. & Watanabe, H. Ubwubatsi bwuzuye mubuhanga bwa SiC kubikoresho byamashanyarazi menshi.Kimoto, T. na Watanabe, H. Gutezimbere inenge muri tekinoroji ya SiC kubikoresho byamashanyarazi menshi. Kimoto, T. & Watanabe, H. 用于 高压 功率 器件 的 SiC 技术 中 的 缺陷 工程。 Kimoto, T. & Watanabe, H. Ubwubatsi bwuzuye mubuhanga bwa SiC kubikoresho byamashanyarazi menshi.Kimoto, T. na Watanabe, H. Gutezimbere inenge muri tekinoroji ya SiC kubikoresho byamashanyarazi menshi.gusaba fiziki Express 13, 120101 (2020).
Zhang, Z. & Sudarshan, TS Basal indege itandukanijwe-idafite epitaxy ya silicon karbide. Zhang, Z. & Sudarshan, TS Basal indege itandukanijwe-idafite epitaxy ya silicon karbide.Zhang Z. na Sudarshan TS Dislokisiyo idafite epitaxy ya silicon karbide mu ndege ya basal. Zhang, Z. & Sudarshan, TS 碳化硅 基 面 无 位 错 外延。 Zhang, Z. & Sudarshan, TSZhang Z. na Sudarshan TS Kwirukana ubusa epitaxy ya silicon karbide indege yibanze.itangazo.umubiri.Wright.87, 151913 (2005).
Zhang, Z., Moulton, E. & Sudarshan, TS Mechanism yo gukuraho indege yibanze yoherejwe muri firime ya SiC yoroheje na epitaxy kuri substrate. Zhang, Z., Moulton, E. & Sudarshan, TS Mechanism yo gukuraho indege yibanze yoherejwe muri firime ya SiC yoroheje na epitaxy kuri substrate.Zhang Z., Moulton E. na Sudarshan TS Uburyo bwo kurandura indege yibanze muri firime ya SiC yoroheje na epitaxy kuri substrate. Zhang, Z., Moulton, E. & Sudarshan, TS 通过 在 蚀刻 衬底 上 外延 消除 SiC 薄膜 中 基 面 位 错 的 机制。 Zhang, Z., Moulton, E. & Sudarshan, TS Uburyo bwo kurandura firime yoroheje ya SiC mukoresheje substrate.Zhang Z., Moulton E. na Sudarshan TS Uburyo bwo kurandura indege shingiro muri firime ya SiC yoroheje na epitaxy on etched substrates.Porogaramu ya fiziki Wright.89, 081910 (2006).
Shtalbush RE n'abandi.Ihagarikwa ryikura ritera kugabanuka kwindege yibanze mu gihe cya 4H-SiC epitaxy.itangazo.umubiri.Wright.94, 041916 (2009).
Zhang, X. Zhang, X.Zhang, X. na Tsuchida, H. Guhindura indege ya basal yoherejwe mukurudodo rwimitambiko mugice cya 4H-SiC epitaxial ibice byubushyuhe bwo hejuru. Zhang, X. & Tsuchida, H. 通过 高温 退火 将 4H-SiC 外延 层 中 的 基 面 位 错 转化 螺纹 螺纹 刃 位。。 Zhang, X. & Tsuchida, H. 通过 高温 退火 将 4H-SiCZhang, X. na Tsuchida, H. Guhindura indege yindege ihindurwamo filament yimurwa mubice bya 4H-SiC epitaxial hamwe nubushyuhe bwo hejuru.J. Gusaba.umubiri.111, 123512 (2012).
Indirimbo, H. & Sudarshan, TS Ihinduranya ryindege ya Basal hafi ya epilayer / substrate intera mugukura kwa epitaxial ya 4 ° off-axis 4H - SiC. Indirimbo, H. & Sudarshan, TS Ihinduranya ryindege ya Basal hafi ya epilayer / substrate intera mugukura kwa epitaxial ya 4 ° off-axis 4H - SiC.Indirimbo, H. na Sudarshan, TS Guhindura indege yibanze yibanze hafi ya epitaxial layer / substrate interineti mugihe cyo gukura kwa epitaxial ya 4H - SiC. Indirimbo, H. & Sudarshan, TS 在 4 ° 离轴 4H-SiC 外延 生长 中 外延 层 / 衬底 界面 附近 的 基底 平面 位 错 转换。。 Indirimbo, H. & Sudarshan, TS 在 4 ° 离轴 4H-SiC Indirimbo, H. & Sudarshan, TSInzibacyuho ya planar ya substrate hafi ya epitaxial layer / imbibi za substrate mugihe cyo gukura kwa epitaxial ya 4H-SiC hanze ya 4 ° axis.J. Crystal.Gukura 371, 94-101 (2013).
Konishi, K. n'abandi.Mugihe cyinshi, ikwirakwizwa ryindege ya basal dislocation ikurikirana amakosa muri 4H-SiC epitaxial epitaxial ihinduranya filament edge dislocations.J. Gusaba.umubiri.114, 014504 (2013).
Konishi, K. n'abandi.Shushanya ibice bya epitaxial ya bipolar idashobora kwangirika ya SiC MOSFETs mugushakisha ahantu hanini hateganijwe amakosa ya nucleation yibikorwa bya X-ray ikora isesengura ryimiterere.AIP Yateye imbere 12, 035310 (2022).
Lin, S. n'abandi.Ingaruka yimiterere yindege yibanze yo gukwirakwiza ikosa rimwe ryubwoko bwa Shockley mugihe cyo kwangirika kwimbere ya 4H-SiC pin diode.Ubuyapani.J. Gusaba.umubiri.57, 04FR07 (2018).
Tahara, T., n'abandi.Ubwikorezi bugufi butwara ubuzima muri azote ikungahaye kuri azote 4H-SiC ikoreshwa muguhashya amakosa yibitse muri diode ya PiN.J. Gusaba.umubiri.120, 115101 (2016).
Tahara, T. n'abandi.Gutera inshinge ziterwa nubwishingizi bwa Shockley imwe ikwirakwiza amakosa muri 4H-SiC PiN diode.J. Gusaba.Fizika 123, 025707 (2018).
Mae, S., Tawara, T., Tsuchida, H. & Kato, M. Microscopic FCA sisitemu yo gupima ubwikorezi bwimbitse bwubuzima bwa SiC. Mae, S., Tawara, T., Tsuchida, H. & Kato, M. Microscopic FCA sisitemu yo gupima ubwikorezi bwimbitse bwubuzima bwa SiC.Mei, S., Tawara, T Mae, S. 、 Tawara, T. 、 Tsuchida, H. & Kato, M. 用于 SiC 中 深度 分辨 载 流 子 寿命 测量 的 显微 FCA 系统。 Mae, S. 、 Tawara, T.Mei S., Tawara T., Tsuchida H. na Kato M. Micro-FCA sisitemu yo gupima byimbitse byabatwara ubuzima bwabo bwose muri karbide ya silicon.alma mater siyansi Ihuriro 924, 269-2272 (2018).
Hirayama, T. n'abandi.Ikwirakwizwa ryimbitse ryubuzima bwabatwara igihe kinini cya 4H-SiC epitaxial yapimwe ntirisenya hakoreshejwe igihe cyo gukemura ubwikorezi bwubusa kandi urumuri rwambutse.Hindukira kuri siyansi.metero.91, 123902 (2020).
Igihe cyo kohereza: Ugushyingo-06-2022