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4H-SiC idagulitsidwa ngati zida zamagetsi zamagetsi zamagetsi. Komabe, kudalirika kwa nthawi yaitali kwa zipangizo za 4H-SiC ndizolepheretsa kugwiritsa ntchito kwawo kwakukulu, ndipo vuto lodalirika lodalirika la zipangizo za 4H-SiC ndi kuwonongeka kwa bipolar. Kuwonongeka kumeneku kumayambitsidwa ndi vuto limodzi la Shockley stacking (1SSF) kufalikira kwa ndege zoyambira mu makhiristo a 4H-SiC. Apa, tikupangira njira yopondereza kukulitsa kwa 1SSF poyika ma protoni pa 4H-SiC epitaxial wafers. Ma diode a PiN opangidwa pa zowotcha zowomberedwa ndi proton adawonetsa mawonekedwe amagetsi apano monga ma diode osayika pulotoni. Mosiyana ndi izi, kukulitsa kwa 1SSF kumaponderezedwa bwino mu diode ya PiN yopangidwa ndi proton. Chifukwa chake, kuyika kwa ma protoni mu 4H-SiC epitaxial wafers ndi njira yothandiza yopondereza kuwonongeka kwa bipolar kwa zida za 4H-SiC mphamvu za semiconductor ndikusunga magwiridwe antchito. Chotsatirachi chimathandizira kupanga zida zodalirika za 4H-SiC.
Silicon carbide (SiC) imadziwika kuti ndi semiconductor ya zida zamphamvu kwambiri, zothamanga kwambiri zomwe zimatha kugwira ntchito m'malo ovuta1. Pali ma polytypes ambiri a SiC, omwe 4H-SiC ali ndi zida zabwino kwambiri za semiconductor monga kusuntha kwa ma elekitironi komanso kusweka kwamphamvu kwamagetsi2. Zowotcha za 4H-SiC zokhala ndi mainchesi 6 pakali pano zimagulitsidwa ndipo zimagwiritsidwa ntchito popanga zida zambiri za semiconductor3. Makina oyendetsa magalimoto amagetsi ndi masitima apamtunda adapangidwa pogwiritsa ntchito zida za 4H-SiC4.5 mphamvu za semiconductor. Komabe, zipangizo za 4H-SiC zimakhalabe ndi zovuta zodalirika za nthawi yaitali monga kuwonongeka kwa dielectric kapena kudalirika kwafupipafupi, 6,7 yomwe imodzi mwazinthu zofunika kwambiri zodalirika ndi bipolar degradation2,8,9,10,11. Kuwonongeka kwa bipolar kumeneku kudapezeka zaka 20 zapitazo ndipo kwakhala vuto kwanthawi yayitali pakupanga zida za SiC.
Kuwonongeka kwa bipolar kumayambitsidwa ndi vuto limodzi la Shockley stack (1SSF) mu makhiristo a 4H-SiC okhala ndi ma basal plane dislocation (BPDs) omwe amafalitsidwa ndi recombination enhanced dislocation glide (REDG)12,13,14,15,16,17,18,19. Chifukwa chake, ngati kukulitsa kwa BPD kukukanizidwa ku 1SSF, zida zamagetsi za 4H-SiC zitha kupangidwa popanda kuwonongeka kwa bipolar. Njira zingapo zanenedwa kuti ziletsa kufalitsa kwa BPD, monga BPD to Thread Edge Dislocation (TED) kusintha 20,21,22,23,24. M'mapaipi aposachedwa a SiC epitaxial, BPD imapezeka makamaka mu gawo lapansi osati mu epitaxial wosanjikiza chifukwa cha kutembenuka kwa BPD kukhala TED panthawi yoyamba ya kukula kwa epitaxial. Choncho, vuto lotsala la kuwonongeka kwa bipolar ndikugawidwa kwa BPD mu gawo lapansi 25,26,27. Kuyika kwa "composite reinforcing layer" pakati pa drift layer ndi gawo lapansi kwaperekedwa ngati njira yothandiza yopondereza kufalikira kwa BPD mu gawo lapansi28, 29, 30, 31. Chosanjikiza ichi chimawonjezera mwayi wophatikizananso kwa ma electron-hole pair mu epitaxial layer ndi SiC substrate. Kuchepetsa kuchuluka kwa ma electron-hole pairs kumachepetsa kuyendetsa kwa REDG kupita ku BPD mu gawo lapansi, kotero kuti gulu lowonjezera lothandizira limatha kupondereza kuwonongeka kwa bipolar. Tikumbukenso kuti kuika wosanjikiza kumaphatikizapo ndalama zina popanga zopyapyala, ndipo popanda kuika wosanjikiza n'kovuta kuchepetsa chiwerengero cha ma electron-hole awiriawiri polamulira kokha kulamulira moyo chonyamulira. Chifukwa chake, pakufunikabe kufunikira kokhazikitsa njira zina zopondereza kuti mukwaniritse bwino pakati pa mtengo wopangira zida ndi zokolola.
Chifukwa kukulitsa BPD ku 1SSF kumafuna kusuntha kwapang'onopang'ono (PDs), kukanikiza PD ndi njira yodalirika yoletsa kuwonongeka kwa bipolar. Ngakhale kuti PD pining ndi zonyansa zachitsulo zanenedwa, ma FPD mu magawo a 4H-SiC ali pamtunda wa 5 μm kuchokera pamwamba pa epitaxial layer. Kuphatikiza apo, popeza kuchuluka kwachitsulo chachitsulo chilichonse mu SiC ndi kochepa kwambiri, zimakhala zovuta kuti zonyansa zachitsulo zifalikire mu gawo lapansi34. Chifukwa cha kuchuluka kwa zitsulo za atomiki, kuyika zitsulo ndi ayoni kumakhala kovuta. Mosiyana, pankhani ya haidrojeni, chinthu chopepuka kwambiri, ma ion (ma protoni) amatha kuyikidwa mu 4H-SiC mpaka kuya kwa 10 µm pogwiritsa ntchito accelerator ya MeV. Chifukwa chake, ngati kuyika kwa protoni kumakhudza PD pinning, ndiye kuti itha kugwiritsidwa ntchito kupondereza kufalitsa kwa BPD mu gawo lapansi. Komabe, kuyika kwa proton kumatha kuwononga 4H-SiC ndikupangitsa kuti chipangizochi chichepetse37,38,39,40.
Kugonjetsa kuwonongeka kwa chipangizo chifukwa cha kuikidwa kwa pulotoni, kutentha kwapamwamba kumagwiritsidwa ntchito kukonzanso zowonongeka, mofanana ndi njira yochepetsera yomwe imagwiritsidwa ntchito kwambiri pambuyo pa kuvomereza ion implantation pokonza chipangizo1, 40, 41, 42. Ngakhale kuti ion mass spectrometry yachiwiri (SIMS)43 ili ndi lipoti kufalikira kwa haidrojeni chifukwa cha kutentha kwambiri, ndizotheka kuti kachulukidwe kokha ka maatomu a haidrojeni pafupi ndi FD sikokwanira kuti azindikire kupindika kwa PR pogwiritsa ntchito SIMS. Choncho, mu phunziro ili, tinayika ma protoni mu 4H-SiC epitaxial wafers musanayambe kupanga chipangizo, kuphatikizapo kutentha kwapamwamba. Tidagwiritsa ntchito ma diode a PiN ngati zida zoyeserera ndikuzipangira paziwopsezo za 4H-SiC zojambulidwa ndi proton. Kenako tidawona mawonekedwe a volt-ampere kuti tiphunzire kuwonongeka kwa magwiridwe antchito a chipangizocho chifukwa cha jakisoni wa proton. Pambuyo pake, tidawona kukulitsa kwa 1SSF muzithunzi za electroluminescence (EL) pambuyo poyika voteji yamagetsi ku diode ya PiN. Pomaliza, tidatsimikizira zotsatira za jakisoni wa proton pakuletsa kukulitsa kwa 1SSF.
Pa mkuyu. Chithunzi 1 chikuwonetsa mawonekedwe amagetsi amakono (CVCs) a ma PiN diode kutentha kwa firiji m'magawo omwe ali ndi proton implantation isanachitike. Ma diode a PiN okhala ndi jekeseni wa proton amawonetsa mawonekedwe okonzanso ofanana ndi ma diode opanda jekeseni wa proton, ngakhale mawonekedwe a IV amagawidwa pakati pa ma diode. Kuti tisonyeze kusiyana pakati pa mikhalidwe ya jekeseni, tinakonza mafupipafupi a voteji kutsogolo kwa 2.5 A / cm2 (yofanana ndi 100 mA) monga chiwerengero cha chiwerengero monga momwe tawonetsera pa Chithunzi 2. Mphepete mwafupikitsa ndi kugawa kwachibadwa imayimiridwanso. ndi mzere wa madontho. mzere. Monga tikuonera pansonga za mapindikidwe, kukana kumawonjezeka pang'ono pa mlingo wa pulotoni wa 1014 ndi 1016 cm-2, pamene diode ya PiN yokhala ndi mlingo wa 1012 cm-2 imasonyeza pafupifupi mikhalidwe yofanana ndi yopanda pulotoni. . Tinapanganso proton implantation pambuyo popanga ma PiN diode omwe sanawonetse ma electroluminescence ofanana chifukwa cha kuwonongeka komwe kunabwera chifukwa cha kuikidwa kwa proton monga momwe tawonetsera pa Chithunzi S1 monga momwe tafotokozera m'maphunziro apitawa37,38,39. Choncho, annealing pa 1600 ° C pambuyo implantation wa Al ions ndi njira zofunika kupanga zipangizo yambitsa Al acceptor, amene angathe kukonzanso kuwonongeka chifukwa proton implantation, zomwe zimapangitsa CVCs kukhala chimodzimodzi pakati oikidwa ndi sanali implanted proton PiN diode. . Mafupipafupi apano pa -5 V amawonetsedwanso mu Chithunzi S2, palibe kusiyana kwakukulu pakati pa ma diode okhala ndi jekeseni wa proton.
Mawonekedwe a Volt-ampere a PiN diode okhala ndi ma protoni obaya komanso opanda jekeseni kutentha. Nthanoyi ikuwonetsa mlingo wa ma protoni.
Mafupipafupi amagetsi a 2.5 A/cm2 mwachindunji a PiN diode okhala ndi ma protoni obaya komanso osabayidwa. Mzere wamadontho umagwirizana ndi kugawa kwanthawi zonse.
Pa mkuyu. 3 ikuwonetsa chithunzi cha EL cha diode ya PiN yokhala ndi kachulukidwe ka 25 A/cm2 pambuyo pa voliyumu. Musanayambe kugwiritsa ntchito pulsed panopa katundu, madera amdima a diode sanawonedwe, monga momwe tawonetsera pa Chithunzi 3. C2. Komabe, monga zikuwonetsedwa mkuyu. 3a, mu diode ya PiN popanda kuyika pulotoni, madera angapo amizeremizere yakuda okhala ndi m'mphepete mwa kuwala adawonedwa atagwiritsa ntchito mphamvu yamagetsi. Madera amdima ngati ndodo amawonedwa muzithunzi za EL za 1SSF kuchokera ku BPD mu gawo lapansi28,29. M'malo mwake, zolakwika zina zowonjezera zidawoneka mu ma diode a PiN okhala ndi ma protoni oyikidwa, monga momwe tawonetsera mkuyu 3b-d. Pogwiritsa ntchito mawonekedwe a X-ray, tinatsimikizira kukhalapo kwa PRs yomwe imatha kuchoka ku BPD kupita ku gawo laling'ono pamphepete mwa ma contacts mu diode ya PiN popanda jekeseni wa proton (Mkuyu 4: chithunzichi popanda kuchotsa electrode yapamwamba (chithunzi, PR) pansi pa maelekitirodi sawoneka). Choncho, malo amdima mu fano la EL amafanana ndi 1SSF BPD yowonjezereka mu gawo laling'ono la PiN diode akuwonetsedwa mu Zithunzi 1 ndi 2. Mavidiyo a S3-S6 ndi opanda zowonjezera. madera amdima (zithunzi za EL zosintha nthawi za PiN diode popanda jekeseni wa proton ndi kuikidwa pa 1014 cm-2) zikuwonetsedwanso mu Zowonjezera Zowonjezera.
Zithunzi za EL za ma diode a PiN pa 25 A/cm2 pambuyo pa maola 2 akupsinjika kwamagetsi (a) popanda kuyika pulotoni komanso milingo yoyikidwa ya (b) 1012 cm-2, (c) 1014 cm-2 ndi (d) 1016 cm-2 mapulotoni.
Tidawerengera kuchuluka kwa 1SSF yokulitsidwa powerengera madera amdima okhala ndi m'mphepete owala m'magawo atatu a PiN pa chikhalidwe chilichonse, monga momwe tawonetsera pa Chithunzi 5. Kuchulukira kwa 1SSF yokulitsidwa kumachepa ndi kuchuluka kwa protoni, komanso ngakhale pamlingo wa 1012 cm-2, kachulukidwe ka 1SSF yokulitsidwa ndi yotsika kwambiri kuposa mu diode ya PiN yosayikidwa.
Kuchulukirachulukira kwa ma diode a SF PiN okhala ndi komanso opanda proton implantation pambuyo pokweza ndi pulsed current (dera lililonse limaphatikizapo ma diode atatu odzaza).
Kufupikitsa moyo wonyamulira kumakhudzanso kuponderezedwa kwakukula, ndipo jekeseni wa proton amachepetsa moyo wonyamulira32,36. Tawonapo nthawi zonse zonyamula katundu mu epitaxial wosanjikiza 60 µm wokhuthala ndi ma protoni ojambulidwa a 1014 cm-2. Kuyambira nthawi ya moyo wonyamulira, ngakhale kuti implants imachepetsa mtengo kufika ~ 10%, annealing yotsatira imabwezeretsa ~ 50%, monga momwe tawonetsera mkuyu S7. Chifukwa chake, moyo wonyamulira, wochepetsedwa chifukwa cha kulowetsedwa kwa proton, umabwezeretsedwa ndi kutentha kwambiri. Ngakhale kuchepetsa 50% kwa moyo wonyamula katundu kumalepheretsanso kufalikira kwa zolakwika zodulirana, mawonekedwe a I-V, omwe nthawi zambiri amadalira moyo wonyamulira, amangowonetsa kusiyana kwakung'ono pakati pa ma diode obaya ndi osayikidwa. Chifukwa chake, tikukhulupirira kuti PD anchoring imathandizira kuletsa kufalikira kwa 1SSF.
Ngakhale kuti SIMS sinazindikire hydrogen pambuyo pa annealing pa 1600 ° C, monga momwe tafotokozera m'maphunziro apitalo, tinawona zotsatira za kulowetsedwa kwa proton pa kuponderezedwa kwa 1SSF, monga momwe tawonetsera mu Zithunzi 1 ndi 4. 3, 4. Choncho, timakhulupirira kuti PD imakhazikika ndi maatomu a haidrojeni omwe ali ndi kachulukidwe pansi pa malire a SIMS (2 × 1016 cm-3) kapena zolakwika zomwe zimayambitsidwa ndi kuikidwa. Tiyenera kuzindikira kuti sitinatsimikizire kuwonjezeka kwa kukana kwa boma chifukwa cha kutalika kwa 1SSF pambuyo pa opaleshoni yamakono. Izi zitha kukhala chifukwa cholumikizana ndi ohmic wopanda ungwiro wopangidwa pogwiritsa ntchito njira yathu, yomwe idzathetsedwa posachedwa.
Pomaliza, tinapanga njira yozimitsa yokulitsa BPD mpaka 1SSF mu 4H-SiC PiN diode pogwiritsa ntchito proton implantation isanapangidwe kachipangizo. Kuwonongeka kwa chikhalidwe cha I-V panthawi yoyika pulotoni sikofunikira, makamaka pa mlingo wa proton wa 1012 cm-2, koma zotsatira za kupondereza kukulitsa kwa 1SSF ndizofunika. Ngakhale mu phunziroli tidapanga 10 µm wandiweyani wa PiN diode ndi proton implantation ku kuya kwa 10 µm, ndizothekabe kukhathamiritsa mikhalidwe yoyika ndikuyikapo kupanga mitundu ina ya zida za 4H-SiC. Ndalama zowonjezera zopangira chipangizo panthawi yopangira proton ziyenera kuganiziridwa, koma zidzakhala zofanana ndi zopangira aluminium ion implantation, yomwe ndiyo njira yaikulu yopangira zipangizo zamagetsi za 4H-SiC. Chifukwa chake, kuyika kwa pulotoni kusanachitike kukonzedwa kwa chipangizocho ndi njira yomwe ingatheke kupanga zida zamphamvu za 4H-SiC popanda kuwonongeka.
Chophika cha 4-inchi n-mtundu wa 4H-SiC chokhala ndi epitaxial layer makulidwe a 10 µm ndi donor doping concentration ya 1 × 1016 cm-3 idagwiritsidwa ntchito ngati chitsanzo. Asanayambe kukonza chipangizochi, ma ion a H + adayikidwa mu mbale ndi mphamvu yothamangitsira 0,95 MeV kutentha kwapakati mpaka kuya kwa 10 μm pangodya yabwinobwino kupita kumtunda. Pakuyika pulotoni, chigoba pa mbale chinagwiritsidwa ntchito, ndipo mbaleyo inali ndi magawo opanda ndi proton mlingo wa 1012, 1014, kapena 1016 cm-2. Kenako, ma Al ions okhala ndi pulotoni mlingo wa 1020 ndi 1017 cm-3 adayikidwa pamwamba pa mtanda wonsewo mpaka kuya kwa 0-0.2 µm ndi 0.2-0.5 µm kuchokera pamwamba, kenako ndikuyika pa 1600 ° C kupanga kapu ya kaboni kupanga ap layer. -mtundu. Pambuyo pake, mbali yakumbuyo ya Ni kukhudzana idayikidwa kumbali yapansi panthaka, pomwe 2.0 mm × 2.0 mm woboola pakati wa Ti/Al kutsogolo kukhudzana kopangidwa ndi fotolithography ndipo njira ya peel idayikidwa kumbali ya epitaxial. Pomaliza, kulumikizana ndi annealing kumachitika pa kutentha kwa 700 ° C. Titadula chophikacho kukhala tchipisi, tidachita kupsinjika ndikugwiritsa ntchito.
Makhalidwe a I-V a ma PiN diode opangidwa adawonedwa pogwiritsa ntchito HP4155B semiconductor parameter analyzer. Monga kupsinjika kwamagetsi, 10-millisecond pulsed current ya 212.5 A / cm2 inayambitsidwa kwa maola 2 pafupipafupi 10 pulses / sec. Titasankha kutsika kwapang'onopang'ono kapena pafupipafupi, sitinawone kukula kwa 1SSF ngakhale mu diode ya PiN popanda jekeseni wa proton. Pamagetsi ogwiritsidwa ntchito, kutentha kwa diode ya PiN kumakhala pafupifupi 70 ° C popanda kutentha mwadala, monga momwe chithunzi S8 chikusonyezera. Zithunzi za Electroluminescent zidapezedwa kale komanso pambuyo pa kupsinjika kwamagetsi pamlingo wapano wa 25 A/cm2. Synchrotron reflection incidence X-ray topography using monochromatic X-ray beam (λ = 0.15 nm) ku Aichi Synchrotron Radiation Center, ag vector mu BL8S2 ndi -1-128 kapena 11-28 (onani ref. 44 kuti mudziwe zambiri) . ).
Ma frequency a voltage kutsogolo kwa 2.5 A / cm2 amachotsedwa ndi nthawi ya 0.5 V mkuyu. 2 malinga ndi CVC ya dera lililonse la diode ya PiN. Kuchokera pamtengo wofunikira wa Vave yopsinjika ndi kupotozedwa kokhazikika σ kwa kupsinjika, timakonza njira yogawa yokhazikika ngati mzere wamadontho mu Chithunzi 2 pogwiritsa ntchito equation yotsatirayi:
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Nthawi yotumiza: Nov-06-2022
