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4H-SiC has been commercialized as a material for power semiconductor devices. However, the long-term reliability of 4H-SiC devices is an obstacle to their wide application, and the most important reliability problem of 4H-SiC devices is bipolar degradation. This degradation is caused by a single Shockley stacking fault (1SSF) propagation of basal plane dislocations in 4H-SiC crystals. Here, we propose a method for suppressing 1SSF expansion by implanting protons on 4H-SiC epitaxial wafers. PiN diodes fabricated on wafers with proton implantation showed the same current-voltage characteristics as diodes without proton implantation. In contrast, the 1SSF expansion is effectively suppressed in the proton-implanted PiN diode. Thus, the implantation of protons into 4H-SiC epitaxial wafers is an effective method for suppressing bipolar degradation of 4H-SiC power semiconductor devices while maintaining device performance. This result contributes to the development of highly reliable 4H-SiC devices.
Silicon carbide (SiC) is widely recognized as a semiconductor material for high-power, high-frequency semiconductor devices that can operate in harsh environments1. There are many SiC polytypes, among which 4H-SiC has excellent semiconductor device physical properties such as high electron mobility and strong breakdown electric field2. 4H-SiC wafers with a diameter of 6 inches are currently commercialized and used for mass production of power semiconductor devices3. Traction systems for electric vehicles and trains were fabricated using 4H-SiC4.5 power semiconductor devices. However, 4H-SiC devices still suffer from long-term reliability issues such as dielectric breakdown or short-circuit reliability,6,7 of which one of the most important reliability issues is bipolar degradation2,8,9,10,11. This bipolar degradation was discovered over 20 years ago and has long been a problem in SiC device fabrication.
Bipolar degradation is caused by a single Shockley stack defect (1SSF) in 4H-SiC crystals with basal plane dislocations (BPDs) propagating by recombination enhanced dislocation glide (REDG)12,13,14,15,16,17,18,19. Therefore, if BPD expansion is suppressed to 1SSF, 4H-SiC power devices can be fabricated without bipolar degradation. Several methods have been reported to suppress BPD propagation, such as BPD to Thread Edge Dislocation (TED) transformation 20,21,22,23,24. In the latest SiC epitaxial wafers, the BPD is mainly present in the substrate and not in the epitaxial layer due to the conversion of BPD to TED during the initial stage of epitaxial growth. Therefore, the remaining problem of bipolar degradation is the distribution of BPD in the substrate 25,26,27. The insertion of a “composite reinforcing layer” between the drift layer and the substrate has been proposed as an effective method for suppressing BPD expansion in the substrate28, 29, 30, 31. This layer increases the probability of electron-hole pair recombination in the epitaxial layer and SiC substrate. Reducing the number of electron-hole pairs reduces the driving force of REDG to BPD in the substrate, so the composite reinforcement layer can suppress bipolar degradation. It should be noted that the insertion of a layer entails additional costs in the production of wafers, and without the insertion of a layer it is difficult to reduce the number of electron-hole pairs by controlling only the control of the carrier lifetime. Therefore, there is still a strong need to develop other suppression methods to achieve a better balance between device manufacturing cost and yield.
Because extension of the BPD to 1SSF requires movement of partial dislocations (PDs), pinning the PD is a promising approach to inhibit bipolar degradation. Although PD pinning by metal impurities has been reported, FPDs in 4H-SiC substrates are located at a distance of more than 5 μm from the surface of the epitaxial layer. In addition, since the diffusion coefficient of any metal in SiC is very small, it is difficult for metal impurities to diffuse into the substrate34. Due to the relatively large atomic mass of metals, ion implantation of metals is also difficult. In contrast, in the case of hydrogen, the lightest element, ions (protons) can be implanted into 4H-SiC to a depth of more than 10 µm using a MeV-class accelerator. Therefore, if proton implantation affects PD pinning, then it can be used to suppress BPD propagation in the substrate. However, proton implantation can damage 4H-SiC and result in reduced device performance37,38,39,40.
To overcome device degradation due to proton implantation, high-temperature annealing is used to repair damage, similar to the annealing method commonly used after acceptor ion implantation in device processing1, 40, 41, 42. Although secondary ion mass spectrometry (SIMS)43 has reported hydrogen diffusion due to high-temperature annealing, it is possible that only the density of hydrogen atoms near the FD is not enough to detect the pinning of the PR using SIMS. Therefore, in this study, we implanted protons into 4H-SiC epitaxial wafers before the device fabrication process, including high temperature annealing. We used PiN diodes as experimental device structures and fabricated them on proton-implanted 4H-SiC epitaxial wafers. We then observed the volt-ampere characteristics to study the degradation of device performance due to proton injection. Subsequently, we observed the expansion of 1SSF in electroluminescence (EL) images after applying an electrical voltage to the PiN diode. Finally, we confirmed the effect of proton injection on the suppression of the 1SSF expansion.
On fig. Figure 1 shows the current–voltage characteristics (CVCs) of PiN diodes at room temperature in regions with and without proton implantation prior to pulsed current. PiN diodes with proton injection show rectification characteristics similar to diodes without proton injection, even though the IV characteristics are shared between the diodes. To indicate the difference between the injection conditions, we plotted the voltage frequency at a forward current density of 2.5 A/cm2 (corresponding to 100 mA) as a statistical plot as shown in Figure 2. The curve approximated by a normal distribution is also represented by a dotted line. line. As can be seen from the peaks of the curves, the on-resistance slightly increases at proton doses of 1014 and 1016 cm-2, while the PiN diode with a proton dose of 1012 cm-2 shows almost the same characteristics as without proton implantation. We also performed proton implantation after fabrication of PiN diodes that did not exhibit uniform electroluminescence due to damage caused by proton implantation as shown in Figure S1 as described in previous studies37,38,39. Therefore, annealing at 1600 °C after implantation of Al ions is a necessary process to fabricate devices to activate the Al acceptor, which can repair the damage caused by proton implantation, which makes the CVCs the same between implanted and non-implanted proton PiN diodes. The reverse current frequency at -5 V is also presented in Figure S2, there is no significant difference between diodes with and without proton injection.
Volt-ampere characteristics of PiN diodes with and without injected protons at room temperature. The legend indicates the dose of protons.
Voltage frequency at direct current 2.5 A/cm2 for PiN diodes with injected and non-injected protons. The dotted line corresponds to the normal distribution.
On fig. 3 shows an EL image of a PiN diode with a current density of 25 A/cm2 after voltage. Before applying the pulsed current load, the dark regions of the diode were not observed, as shown in Figure 3. C2. However, as shown in fig. 3a, in a PiN diode without proton implantation, several dark striped regions with light edges were observed after applying an electric voltage. Such rod-shaped dark regions are observed in EL images for 1SSF extending from the BPD in the substrate28,29. Instead, some extended stacking faults were observed in PiN diodes with implanted protons, as shown in Fig. 3b–d. Using X-ray topography, we confirmed the presence of PRs that can move from the BPD to the substrate at the periphery of the contacts in the PiN diode without proton injection (Fig. 4: this image without removing the top electrode (photographed, PR under the electrodes is not visible). Therefore, the dark area in the EL image corresponds to an extended 1SSF BPD in the substrate. EL images of other loaded PiN diodes are shown in Figures 1 and 2. Videos S3-S6 with and without extended dark areas (time-varying EL images of PiN diodes without proton injection and implanted at 1014 cm-2) are also shown in Supplementary Information .
EL images of PiN diodes at 25 A/cm2 after 2 hours of electrical stress (a) without proton implantation and with implanted doses of (b) 1012 cm-2, (c) 1014 cm-2 and (d) 1016 cm-2 protons .
We calculated the density of expanded 1SSF by calculating dark areas with bright edges in three PiN diodes for each condition, as shown in Figure 5. The density of expanded 1SSF decreases with increasing proton dose, and even at a dose of 1012 cm-2, the density of expanded 1SSF is significantly lower than in a non-implanted PiN diode.
Increased densities of SF PiN diodes with and without proton implantation after loading with a pulsed current (each state included three loaded diodes).
Shortening the carrier lifetime also affects expansion suppression, and proton injection reduces the carrier lifetime32,36. We have observed carrier lifetimes in an epitaxial layer 60 µm thick with injected protons of 1014 cm-2. From the initial carrier lifetime, although the implant reduces the value to ~10%, subsequent annealing restores it to ~50%, as shown in Fig. S7. Therefore, the carrier lifetime, reduced due to proton implantation, is restored by high-temperature annealing. Although a 50% reduction in carrier life also suppresses the propagation of stacking faults, the I–V characteristics, which are typically dependent on carrier life, show only minor differences between injected and non-implanted diodes. Therefore, we believe that PD anchoring plays a role in inhibiting 1SSF expansion.
Although SIMS did not detect hydrogen after annealing at 1600°C, as reported in previous studies, we observed the effect of proton implantation on the suppression of 1SSF expansion, as shown in Figures 1 and 4. 3, 4. Therefore, we believe that the PD is anchored by hydrogen atoms with density below the detection limit of SIMS (2 × 1016 cm-3) or point defects induced by implantation. It should be noted that we have not confirmed an increase in the on-state resistance due to the elongation of 1SSF after a surge current load. This may be due to imperfect ohmic contacts made using our process, which will be eliminated in the near future.
In conclusion, we developed a quenching method for extending the BPD to 1SSF in 4H-SiC PiN diodes using proton implantation prior to device fabrication. The deterioration of the I–V characteristic during proton implantation is insignificant, especially at a proton dose of 1012 cm–2, but the effect of suppressing the 1SSF expansion is significant. Although in this study we fabricated 10 µm thick PiN diodes with proton implantation to a depth of 10 µm, it is still possible to further optimize the implantation conditions and apply them to fabricate other types of 4H-SiC devices. Additional costs for device fabrication during proton implantation should be considered, but they will be similar to those for aluminum ion implantation, which is the main fabrication process for 4H-SiC power devices. Thus, proton implantation prior to device processing is a potential method for fabricating 4H-SiC bipolar power devices without degeneration.
A 4-inch n-type 4H-SiC wafer with an epitaxial layer thickness of 10 µm and a donor doping concentration of 1 × 1016 cm–3 was used as a sample. Before processing the device, H+ ions were implanted into the plate with an acceleration energy of 0.95 MeV at room temperature to a depth of about 10 μm at a normal angle to the plate surface. During proton implantation, a mask on a plate was used, and the plate had sections without and with a proton dose of 1012, 1014, or 1016 cm-2. Then, Al ions with proton doses of 1020 and 1017 cm–3 were implanted over the entire wafer to a depth of 0–0.2 µm and 0.2–0.5 µm from the surface, followed by annealing at 1600°C to form a carbon cap to form a p layer. -type. Subsequently, a back side Ni contact was deposited on the substrate side, while a 2.0 mm × 2.0 mm comb-shaped Ti/Al front side contact formed by photolithography and a peel process was deposited on the epitaxial layer side. Finally, contact annealing is carried out at a temperature of 700 °C. After cutting the wafer into chips, we performed stress characterization and application.
The I–V characteristics of the fabricated PiN diodes were observed using an HP4155B semiconductor parameter analyzer. As an electrical stress, a 10-millisecond pulsed current of 212.5 A/cm2 was introduced for 2 hours at a frequency of 10 pulses/sec. When we chose a lower current density or frequency, we did not observe 1SSF expansion even in a PiN diode without proton injection. During the applied electrical voltage, the temperature of the PiN diode is around 70°C without intentional heating, as shown in Figure S8. Electroluminescent images were obtained before and after electrical stress at a current density of 25 A/cm2. Synchrotron reflection grazing incidence X-ray topography using a monochromatic X-ray beam (λ = 0.15 nm) at the Aichi Synchrotron Radiation Center, the ag vector in BL8S2 is -1-128 or 11-28 (see ref. 44 for details). ).
The voltage frequency at a forward current density of 2.5 A/cm2 is extracted with an interval of 0.5 V in fig. 2 according to the CVC of each state of the PiN diode. From the mean value of the stress Vave and the standard deviation σ of the stress, we plot a normal distribution curve in the form of a dotted line in Figure 2 using the following equation:
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Post time: Nov-06-2022
