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Ejirila 4H-SiC azụmaahịa dị ka ihe maka ngwaọrụ semiconductor ike. Otú ọ dị, ntụkwasị obi ogologo oge nke ngwaọrụ 4H-SiC bụ ihe mgbochi na ngwa ha sara mbara, na nsogbu ntụkwasị obi kachasị mkpa nke ngwaọrụ 4H-SiC bụ mmebi bipolar. Ihe kpatara mmebi a bụ otu mmejọ Shockley stacking (1SSF) mgbasa nke ụgbọ elu basal na kristal 4H-SiC. N'ebe a, anyị na-atụ aro usoro maka ịkwụsị mgbasawanye 1SSF site na ịkụnye protons na 4H-SiC epitaxial wafers. PiN diodes arụpụtara na wafers nwere ntinye proton gosipụtara otu njirimara voltaji dị ugbu a dị ka diode na-enweghị ntinye proton. N'ụzọ dị iche, a na-egbochi mgbasawanye 1SSF nke ọma na piN diode etinyere na proton. Ya mere, ntinye nke protons n'ime 4H-SiC epitaxial wafers bụ ụzọ dị irè maka igbochi mmebi bipolar nke 4H-SiC ike semiconductor ngwaọrụ mgbe ị na-arụ ọrụ ngwaọrụ. Nsonaazụ a na-enye aka na mmepe nke ngwaọrụ 4H-SiC nke a pụrụ ịdabere na ya nke ukwuu.
A na-amata silicon carbide (SiC) dị ka ihe semiconductor maka ngwaọrụ semiconductor dị elu, nke nwere ike ịrụ ọrụ na gburugburu ebe siri ike1. Enwere ọtụtụ SiC polytypes, n'ime nke 4H-SiC nwere ọmarịcha ngwaọrụ semiconductor akụrụngwa anụ ahụ dị ka ngagharị eletrọn dị elu yana mgbawa ọkụ eletrik2. 4H-SiC wafers na dayameta nke 6 sentimita na-ere ahịa ugbu a ma jiri ya mee ihe maka mmepụta nke ngwaọrụ semiconductor ike3. Ejiri ngwaọrụ semiconductor ike 4H-SiC4.5 mepụta sistemu traction maka ụgbọ ala eletrik na ụgbọ oloko. Otú ọ dị, ngwaọrụ 4H-SiC ka na-ata ahụhụ site na nsogbu ndị a pụrụ ịdabere na ya dị ogologo oge dịka nkwụsịtụ dielectric ma ọ bụ ntụkwasị obi dị mkpirikpi, 6,7 nke otu n'ime ihe ndị kasị mkpa a pụrụ ịdabere na ya bụ bipolar degenradation2,8,9,10,11. Achọpụtara mmebi bipolar a ihe karịrị afọ 20 gara aga ma bụrụkwa nsogbu ogologo oge na nrụpụta ngwaọrụ SiC.
A na-akpata mmebi bipolar site na otu ntụpọ Shockley stack (1SSF) na kristal 4H-SiC nwere mgbapụ ụgbọ elu basal (BPDs) na-agbasa site na recombination enhanced dislocation glide (REDG) 12,13,14,15,16,17,18,19. Ya mere, ọ bụrụ na-ebelata mgbasawanye BPD na 1SSF, enwere ike ịmepụta ngwaọrụ ike 4H-SiC na-enweghị mmebi bipolar. A kọwo ọtụtụ ụzọ iji gbochie mgbasa ozi BPD, dị ka mgbanwe BPD na Thread Edge Dislocation (TED) 20,21,22,23,24. N'ime ihe ọhụrụ SiC epitaxial wafers, BPD na-abụkarị na mkpụrụ osisi ọ bụghị na oyi akwa epitaxial n'ihi ntụgharị nke BPD na TED n'oge mmalite nke uto epitaxial. Ya mere, nsogbu fọdụrụnụ nke mbibi bipolar bụ nkesa nke BPD na mkpụrụ 25,26,27. Atụpụtala ntinye nke "akwa oyi akwa na-agba ume" n'etiti oyi akwa na-ebugharị na mkpụrụ osisi ka ọ bụrụ usoro dị irè maka igbochi mgbasawanye BPD na substrate28, 29, 30, 31. Nke a oyi akwa na-abawanye ohere nke ọnụọgụ electron-oghere recombination na nke ọzọ. oyi akwa epitaxial na mkpụrụ SiC. Mbelata ọnụọgụ abụọ nke oghere eletrọn na-ebelata ike ịkwọ ụgbọala nke REDG ruo BPD n'ime mkpụrụ, yabụ oyi akwa nkwado mejupụtara nwere ike igbochi mmebi bipolar. Ekwesiri iburu n'uche na ntinye nke oyi akwa na-agụnye ụgwọ ndị ọzọ na mmepụta nke wafers, na na-enweghị ntinye nke oyi akwa ọ na-esiri ike ibelata ọnụọgụ ọnụọgụ electron-oghere abụọ site na ịchịkwa naanị njikwa nke onye na-ebu ya n'oge ndụ. Ya mere, a ka nwere mkpa siri ike ịmepụta ụzọ nkwụsị ndị ọzọ iji nweta nguzozi dị mma n'etiti ọnụ ahịa nrụpụta ngwaọrụ na mkpụrụ.
N'ihi na ndọtị nke BPD gaa na 1SSF chọrọ mmegharị nke nkwụsịtụ akụkụ (PDs), ịpịnye PD bụ ụzọ dị mma iji gbochie mmebi bipolar. Ọ bụ ezie na a kọwapụtala PD pinning site na adịghị ọcha ígwè, FPDs na 4H-SiC substrates dị n'ebe dị anya karịa 5 μm site na elu nke epitaxial oyi akwa. Na mgbakwunye, ebe ọnụọgụ mgbasa ozi nke ọla ọ bụla dị na SiC dị obere, ọ na-esiri ike adịghị ọcha ọla gbasaa n'ime mkpụrụ34. N'ihi nnukwu atomiki nke ọla, ntinye ion nke ọla na-esikwa ike. N'ụzọ dị iche, n'ihe banyere hydrogen, ihe kachasị mfe, ion (protons) nwere ike ịkụnye n'ime 4H-SiC ruo omimi nke ihe karịrị 10 µm site na iji ngwa ngwa MeV-class. Ya mere, ọ bụrụ na ntinye proton na-emetụta PD pinning, mgbe ahụ enwere ike iji ya gbochie mgbasa BPD na mkpụrụ. Agbanyeghị, ntinye proton nwere ike mebie 4H-SiC wee mee ka arụmọrụ ngwaọrụ belata37,38,39,40.
Iji merie mmebi ngwaọrụ n'ihi ntinye proton, a na-eji ọkụ ọkụ na-ekpo ọkụ na-emezi ihe mebiri emebi, dị ka usoro nkwụsị nke a na-ejikarị eme ihe mgbe a na-etinye ion ion na nhazi ngwaọrụ1, 40, 41, 42. Ọ bụ ezie na secondary ion mass spectrometry (SIMS)43 nwere. kọrọ mgbasa hydrogen n'ihi elu-okpomọkụ annealing, ọ ga-ekwe omume na naanị njupụta nke hydrogen atọm nso FD ezughị iji chọpụta pinning nke PR iji SIMS. Ya mere, n'ime ọmụmụ ihe a, anyị kụnyere protons n'ime 4H-SiC epitaxial wafers tupu usoro mmepụta ngwaọrụ, gụnyere nnukwu okpomọkụ annealing. Anyị na-eji PiN diodes dị ka ihe owuwu ngwaọrụ nnwale wee mepụta ha na wafers 4H-SiC epitaxial nke etinyere na proton. Anyị hụziri àgwà volt-ampere iji mụọ mmebi nke arụmọrụ ngwaọrụ n'ihi ịgba ọgwụ mgbochi proton. N'ikpeazụ, anyị hụrụ mgbasawanye nke 1SSF na foto electroluminescence (EL) mgbe etinyere voltaji eletrik na diode PiN. N'ikpeazụ, anyị kwadoro mmetụta nke injection proton na nkwụsị nke mgbasawanye 1SSF.
Na fig. Ọgụgụ 1 na-egosi njirimara dị ugbu a-voltaji (CVCs) nke PiN diodes na ọnụ ụlọ okpomọkụ na mpaghara nwere ma na-enweghị ntinye proton tupu pulsed ugbu a. PiN diodes nwere proton injection na-egosi nrụzi dị ka diodes na-enweghị ịgba ọgwụ proton, n'agbanyeghị na njirimara IV na-ekerịta n'etiti diodes. Iji gosi ọdịiche dị n'etiti ọnọdụ injection, anyị kpara nkata voltaji ugboro ugboro na njupụta dị ugbu a nke 2.5 A / cm2 (dakọtara na 100 mA) dị ka ọnụ ọgụgụ nchịkọta akụkọ dị ka egosiri na Figure 2. A na-anọchikwa anya akụkụ ahụ nke na-ekesa nke ọma. site n'ahịrị nwere ntụpọ. ahịrị. Dị ka a na-ahụ site na ọnụ ọgụgụ dị elu nke akụkụ ahụ, nguzogide na-abawanye ntakịrị na proton doses nke 1014 na 1016 cm-2, ebe PiN diode nwere proton dose nke 1012 cm-2 na-egosi ihe fọrọ nke nta ka ọ bụrụ otu àgwà ahụ na-enweghị ntinye proton. . Anyị rụkwara ntinye proton mgbe emechara PiN diodes nke na-egosighi otu electroluminescence n'ihi mmebi nke ntinye proton kpatara dị ka egosiri na Figure S1 dị ka akọwara na ọmụmụ gara aga37,38,39. Ya mere, annealing na 1600 Celsius C mgbe etinyere Al ions bụ usoro dị mkpa iji mepụta ngwaọrụ iji rụọ ọrụ Al acceptor, nke nwere ike imezi mmebi nke proton implantation kpatara, nke na-eme ka CVC dị n'etiti proton PiN diodes na-abụghị nke a na-etinye. . A na-egosipụtakwa ugboro ugboro dị ugbu a na -5 V na Figure S2, ọ nweghị nnukwu ọdịiche dị n'etiti diodes nwere na enweghị ọgwụ proton.
Njirimara Volt-ampere nke PiN diodes nwere ma na-enweghị protons gbara n'ime ụlọ okpomọkụ. Akụkọ ifo na-egosi dose nke protons.
Ugboro voltaji na 2.5 A/cm2 dị ugbu a maka diodes PiN nwere protons injected na ndị anaghị agba ya. Ahịrị nwere ntụpọ dabara na nkesa nkịtị.
Na fig. 3 na-egosi onyonyo EL nke diode PiN nwere njupụta ugbu a nke 25 A/cm2 mgbe voltaji gasịrị. Tupu itinye ibu dị ugbu a pulsed, a hụghị mpaghara gbara ọchịchịrị nke diode, dị ka egosiri na foto 3. C2. Otú ọ dị, dị ka e gosiri na fig. 3a, na diode PiN na-enweghị ntinye proton, a hụrụ ọtụtụ mpaghara gbara ọchịchịrị nwere akụkụ ọkụ ka etinyechara voltaji eletrik. A na-ahụ mpaghara ndị gbara ọchịchịrị dị otú ahụ na foto EL maka 1SSF gbatịrị site na BPD na substrate28,29. Kama nke ahụ, ahụrụ ụfọdụ mmejọ mkpokọ agbatị n'ime PiN diode nwere protons etinyere, dịka egosiri na Fig. 3b–d. Iji X-ray topography, anyị kwadoro ọnụnọ nke PR nke nwere ike ịkwaga site na BPD gaa na mkpụrụ na mpụta nke kọntaktị na PiN diode na-enweghị proton injection (Fig 4: ihe oyiyi a na-ewepụghị electrode n'elu (foto, PR). N'okpuru electrodes adịghị ahụ anya). Ebe gbara ọchịchịrị (ihe oyiyi EL na-agbanwe oge nke PiN diodes na-enweghị proton injection na etinyere na 1014 cm-2) na-egosikwa na Ozi Mgbakwụnye.
Ihe oyiyi EL nke diodes PiN na 25 A / cm2 mgbe awa 2 nke nrụgide eletriki (a) na-enweghị ntinye proton na ntinye nke (b) 1012 cm-2, (c) 1014 cm-2 na (d) 1016 cm-2 protons .
Anyị gbakọọ njupụta nke 1SSF gbasaa site n'ịgbakọ ebe gbara ọchịchịrị na ọnụ na-egbuke egbuke na atọ PiN diodes maka ọnọdụ ọ bụla, dị ka e gosiri na Figure 5. Njupụta nke gbasaa 1SSF na-ebelata na ụba proton dose, na ọbụna na a dose nke 1012 cm-2. Njupụta nke 1SSF gbasaara dị obere karịa na diode PiN etinyeghị ya.
Mmụba njupụta nke diodes SF PiN nwere ma na-enweghị ntinye proton mgbe ejiri ya na-ebugharị ugbu a (steeti ọ bụla gụnyere diode atọ bujuru).
Mbelata oge ndụ nke onye na-ebu ya na-emetụtakwa mkpochapụ mgbasawanye, yana ịgba ọgwụ proton na-ebelata ndụ onye na-ebu ya32,36. Anyị ahụla oge ndụ onye na-ebu ya na akwa epitaxial 60 µm nke nwere protons agbanyere 1014 cm-2. Site na ndụ onye mbụ na-ebu ibu, ọ bụ ezie na ntinye na-ebelata uru na ~ 10%, annealing na-esote na-eweghachi ya na ~ 50%, dị ka egosiri na Fig. S7. Ya mere, oge ndụ onye na-ebu ya, nke belatara n'ihi ntinye proton, na-eweghachite site na ikpo ọkụ dị elu. Ọ bụ ezie na mbelata 50% nke ndụ ụgbọelu na-egbochikwa mgbasawanye nke mmejọ mkpokọ, njirimara I-V, nke na-adaberekarị na ndụ ụgbọelu, na-egosi naanị obere ọdịiche dị n'etiti diodes injected na ndị na-abụghị etinyere. Ya mere, anyị kwenyere na PD anchoring na-ekere òkè na igbochi mgbasawanye 1SSF.
Ọ bụ ezie na SIMS achọpụtaghị hydrogen mgbe ọ gbasasịrị na 1600 ° C, dị ka a kọrọ na ọmụmụ ndị gara aga, anyị hụrụ mmetụta nke ntinye proton na nkwụsị nke mgbasawanye 1SSF, dị ka egosiri na Figure 1 na 4. 3, 4. Ya mere, anyị kwenyere na Atọm hydrogen nwere njupụta dị n'okpuru oke nchọpụta SIMS (2 × 1016 cm-3) ma ọ bụ ntụpọ ntụpọ kpatara site na ntinye. Ekwesiri ighota na anyi ekwenyeghi na mmụba nke nguzogide on-steeti n'ihi elongation nke 1SSF mgbe ibu ibu ugbua. Nke a nwere ike ịbụ n'ihi kọntaktị ohmic na-ezughị okè mere site na iji usoro anyị, nke a ga-ewepụ n'ọdịnihu dị nso.
N'ikpeazụ, anyị mepụtara usoro nkwụsị maka ịgbatị BPD gaa na 1SSF na 4H-SiC PiN diodes site na iji ntinye proton tupu ịmepụta ngwaọrụ. Mbibi nke njirimara I-V n'oge ntinye proton abaghị uru, karịsịa na proton dose nke 1012 cm-2, mana mmetụta nke ịkwụsị mgbasawanye 1SSF dị ịrịba ama. Ọ bụ ezie na n'ime ọmụmụ ihe a, anyị rụpụtara 10 µm thick PiN diodes na proton implantation na omimi nke 10 µm, ọ ka nwere ike ịkwalite ọnọdụ ntinye ma tinye ha n'ịmepụta ụdị ngwaọrụ 4H-SiC ndị ọzọ. Ekwesịrị ịtụle ụgwọ ndị ọzọ maka nrụpụta ngwaọrụ n'oge ntinye proton, mana ha ga-adị ka nke aluminom ion implantation, nke bụ isi usoro nrụpụta maka ngwaọrụ ike 4H-SiC. Ya mere, ntinye proton tupu nhazi ngwaọrụ bụ usoro nwere ike ịmepụta ngwaọrụ bipolar 4H-SiC na-enweghị mmebi.
A na-eji 4-inch n-ụdị 4H-SiC wafer nwere ọkpụrụkpụ epitaxial nke 10 µm yana ntinye ntinye doping nke 1 × 1016 cm-3 dị ka ihe atụ. Tupu ịhazi ngwaọrụ ahụ, a na-akụnye ion H+ n'ime efere ahụ na ike ngwa ngwa nke 0.95 MeV na ụlọ okpomọkụ ruo omimi nke ihe dịka 10 μm n'ogo nkịtị n'elu efere ahụ. N'oge a na-etinye proton, a na-eji ihe nkpuchi na efere, na efere ahụ nwere akụkụ na-enweghị yana proton dose nke 1012, 1014, ma ọ bụ 1016 cm-2. Mgbe ahụ, a na-akụnye Al ions nwere proton doses nke 1020 na 1017 cm-3 n'elu wafer dum na omimi nke 0-0.2 µm na 0.2-0.5 µm site na elu, na-esote ya na 1600 ° C iji mepụta okpu carbon ụdị ap oyi akwa. -ụdị. Mgbe nke ahụ gasịrị, a na-edebe kọntaktị azụ azụ Ni n'akụkụ akụkụ, ebe 2.0 mm × 2.0 mm mbo dị n'akụkụ Ti/Al n'ihu nke kpụrụ site na fotolithography ma debe usoro peel n'akụkụ akụkụ epitaxial. N'ikpeazụ, a na-eme mkpesa kọntaktị na okpomọkụ nke 700 Celsius. Mgbe anyị gbusịrị wafer n'ime ibe, anyị mere njirimara nrụgide na ngwa.
Ahụrụ njirimara I-V nke diodes PiN arụpụtara site na iji ihe nyocha paramita nke HP4155B. Dịka nrụgide eletriki, ewepụtara 10-millisecond pulsed current nke 212.5 A/cm2 maka awa 2 na ugboro nke 10 pulses/sec. Mgbe anyị họọrọ njupụta dị ugbu a ma ọ bụ ugboro ole, anyị ahụghị mgbasawanye 1SSF ọbụlagodi na diode PiN na-enweghị injection proton. N'oge voltaji eletrik etinyere, okpomọkụ nke diode PiN dị gburugburu 70 ° C na-enweghị kpo oku ọkụ, dị ka egosiri na foto S8. Enwetara ihe onyonyo elektrọnik tupu na mgbe nrụgide eletriki gasịrị na njupụta ugbu a nke 25 A/cm2. Synchrotron reflection grazing incidence X-ray topography na-eji monochromatic X-ray beam (λ = 0.15 nm) na Aichi Synchrotron Radiation Center, ag vector na BL8S2 bụ -1-128 ma ọ bụ 11-28 (lee ref. 44 maka nkọwa) . ).
A na-ewepụta ugboro voltaji na njupụta dị ugbu a nke 2.5 A/cm2 yana nkeji 0.5 V na fig. 2 dabere na CVC nke steeti ọ bụla nke diode PiN. Site na uru nke nrụgide Vave na ọkọlọtọ ọkọlọtọ σ nke nrụgide ahụ, anyị na-akpapụta usoro nkesa nkịtị n'ụdị ahịrị nwere ntụpọ na Figure 2 site na iji nhata ndị a:
Werner, MR & Fahrner, WR Nyocha na ihe, microsensors, sistemu na ngwaọrụ maka oke okpomọkụ na ngwa gburugburu. Werner, MR & Fahrner, WR Nyocha na ihe, microsensors, sistemu na ngwaọrụ maka oke okpomọkụ na ngwa gburugburu.Werner, MR na Farner, WR nkọwa nke ihe, microsensors, sistemu na ngwaọrụ maka ngwa na elu okpomọkụ na ike gburugburu. Werner, MR & Fahrner, WR. Werner, MR & Fahrner, WR Nyochaa ihe, microsensors, sistemu na ngwaọrụ maka oke okpomọkụ na ngwa gburugburu ebe obibi ọjọọ.Werner, MR na Farner, WR nkọwa nke ihe, microsensors, usoro na ngwaọrụ maka ngwa na elu okpomọkụ na ọnọdụ ọjọọ.IEEE Trans. Igwe eletrọnịkị ụlọ ọrụ. 48, 249–257 (2001).
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Broughton, J., Smet, V., Tummala, RR & Joshi, YK Nyochaa teknụzụ nkwakọ ngwaahịa thermal maka ngwa eletriki eletrik maka ebumnuche traction. Broughton, J., Smet, V., Tummala, RR & Joshi, YK Nyochaa teknụzụ nkwakọ ngwaahịa thermal maka ngwa eletriki eletrik maka ebumnuche traction.Broughton, J., Smet, V., Tummala, RR na Joshi, YK Nleba anya nke teknụzụ nkwakọ ngwaahịa thermal maka ngwa eletriki eletrik maka ebumnuche traction. Broughton, J., Smet, V., Tummala, RR & Joshi, YK 用于牵引目的汽车电力电子热封装技术的回顾。 Broughton, J., Smet, V., Tummala, RR & Joshi, YKBroughton, J., Smet, V., Tummala, RR na Joshi, YK Nleba anya nke teknụzụ nkwakọ ngwaahịa thermal maka ngwa eletriki eletrik maka ebumnuche traction.J. Eletrọn. ngwugwu. trance. ASME 140, 1-11 (2018).
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Oge nzipu: Nov-06-2022
