Kev tiv thaiv kev sib txig sib txig ntawm 4H-sic pin diodes siv cov tshuaj tiv thaiv proton kom tshem tawm bipolar deacharation

Ua tsaug rau koj mus saib xwm txheej. Tus browser version koj siv tau muaj kev txhawb nqa CSS txwv. Rau qhov kev paub zoo tshaj plaws, peb xav kom koj siv qhov browser hloov tshiab (lossis xiam oob qhab sib haum hom hauv Internet Explorer). Nyob rau hauv lub sijhawm, los xyuas kom meej kev txhawb nqa txuas ntxiv, peb yuav muab lub vev xaib tsis muaj cov qauv thiab JavaScript.
4H-Sic tau ua raws li cov khoom siv rau cov khoom siv hluav taws xob soobonductor. Txawm li cas los xij, kev ntseeg tau ntev ntawm 4H-SIC cov khoom siv yog ib qho kev khuam siab yog ib qho kev pab cuam dav, thiab qhov tseem ceeb tshaj plaws kev ntseeg tau ntawm 4H-SIC cov khoom siv yog bipolar defadation. Qhov kev cuam tshuam no tau tshwm sim los ntawm ib qho kev poob siab ntawm kev ua txhaum (1ssf) tshaj tawm ntawm cov dav hlau lub dav hlau dislocations hauv 4H-sic muaju. Ntawm no, peb hais tawm ib txoj kev rau suppressing 1ssf nthuav ntawm cov protons protonses ntawm 4H-Sic Epitaxial Wafers. Tus Pin Diodes Cricated ntawm Wafers nrog cov yam ntxwv ntawm cov kev ua haujlwm qub tam sim no raws li dodes tsis muaj cov proton implantation. Hauv kev sib piv, tus 1ssf expansion yog siv tau zoo rau hauv cov proton-implanted pin. Yog li, kev cog lus ntawm cov protons mus rau hauv 4H-Sic epitaxial wafers yog ib txoj kev zoo rau kev suppressing bipolar deadiconductor cov khoom siv thaum tuav cov khoom siv ntaus ntawv. Qhov txiaj ntsig no ua rau muaj kev pab txhawb rau kev txhim kho ntawm cov kev ntseeg siab 4H-SIC cov khoom siv.
Cov khoom siv uas silicon (SIC) Muaj ntau lub sic polytypes, ntawm lub 4H-sic tau zoo semiconductor ntaus ntawv lub zog xws li hluav taws xob muaj hluav taws xob thiab muaj zog hluav taws xob hluav taws xob. 4H-Sic Wafers nrog txoj kab uas hla ntawm 6 nti tam sim no ua lag luam thiab siv rau huab hwm hluav taws xob semiconductor Devices3. Traction Systems rau cov tsheb hluav taws xob thiab tsheb ciav hlau tau muab khi siv 4H-SIC4.5 Power Siciconductor cov khoom siv. Txawm li cas los xij, 4H-SIC cov cuab yeej tseem raug kev txom nyem los ntawm kev ntseeg tau ntev yog bipolar defadation2,8,30,11. Qhov kev mob bipolar no tau nrhiav tau ntau tshaj 20 xyoo dhau los thiab tau ntev tau ib qho teeb meem hauv Sicchat ntaub ntaub.
Bipolar defadation yog tshwm sim los ntawm ib qho kev poob siab dua disbagination (1-sic crystals (Redg) Yog li ntawd, yog tias BPD nthuav dav tau raug tsim txom rau 1ssf, 4H-sic fais fab muaj peev xwm ua rau muaj kev tawm tsam bipolar. Ob peb txoj hau kev tau tshaj tawm kom tau tshaj tawm BPD kev hais tawm, xws li BPD mus xov av dislocation (TED) hloov 20,22,23,24. Nyob rau hauv qhov tseeb sic epitaxial wafers, BPD yog nyob rau hauv lub substrate thiab tsis nyob rau hauv lub substrate thiab tsis nyob rau hauv kev hloov dua siab tshiab ntawm kev pib theem ntawm kev loj hlob ntawm ecitaxial kev loj hlob. Yog li ntawd, qhov teeb meem seem ntawm bipolar degradation yog kev faib tawm BPD hauv substrate 25,26,27. Lub ntxig ntawm ib txheej "composite txhawb nqa txheej txheem" ​​ntawm cov txheej txheej ntawm electrate28, 29, 30. Txo tus naj npawb ntawm electron-lub khub txo lub zog tsav tsheb ntawm redg rau bpd rau bpd lub zog txheej yuav muaj kev tawm tsam bipolar. Nws yuav tsum raug sau tseg tias lub ntxig ntawm ib txheej entils cov nqi ntxiv hauv kev tsim cov txheej txheem ntawm cov txheej txheem hluav taws xob, thiab cov khub los ntawm kev tswj hwm tsuas yog tswj ntawm lub tsev nqa khoom lub neej. Yog li ntawd, tseem muaj qhov xav tau muaj lwm txoj kev tsim kho lwm yam kom ua tiav qhov sib npaug zoo ntawm kev tsim kho cov nqi thiab tawm.
Vim tias txuas ntxiv ntawm BPD rau 1ssf yuav tsum tau txav ntawm qee qhov kev tsis sib haum xeeb (PDNING), psning PT yog kev txhawb nqa mus rau hauv kev txwv bipolar. Txawm hais tias pd pinning los ntawm cov hlau impurities tau tshaj tawm, FPDs nyob rau hauv 4H-sic substrates yog nyob ntawm qhov deb tshaj 5 μm los ntawm txheej ecitaxial txheej. Ib qho ntxiv, txij li kev sib txawv ntawm cov hlau tsis muaj kev sib txawv yog qhov me me, nws yog qhov nyuaj rau cov hlau impurities rau diffuse rau hauv substrate34. Vim yog cov khoom loj ntawm cov hlau loj ntawm cov hlau, ion tiv thaiv cov hlau kuj yog qhov nyuaj. Hauv kev sib piv, nyob rau hauv cov ntaub ntawv ntawm hydrogen, lub teeb ci, ions (protons) tuaj yeem cog rau hauv 4H-Sic rau ib tug tob ntawm ntau dua 10 μm siv lub ntsuas tsheb mev. Yog li ntawd, yog tias cov proton implantation cuam tshuam rau pd pinning, tom qab ntawd nws tuaj yeem siv los txhawb bpd kev tshaj tawm hauv substrate. Txawm li cas los xij, cov tshuaj tiv thaiv mob proton tuaj yeem ua kev puas tsuaj 4h-sic thiab ua rau cov khoom siv txo qis rau kev ua haujlwm37,38,39,39,30.
Yuav kom kov yeej cov khoom tsis txaus ntseeg vim muaj kev siv nyiaj txiag ntau, nws yog qhov tseem ceeb ntawm hydrogen oms, nws tau qhia txog hydrogen kev sib txawv ntawm FD tsis txaus los tshawb xyuas qhov pinning ntawm tus nqi siv sims. Yog li ntawd, nyob rau hauv txoj kev tshawb no, peb cog cov protons mus rau hauv 4H-Sic epitaxial wafers ua ntej lub cuab yeej fabrication txheej txheem. Peb siv tus pin dodes uas yog cov cuab yeej sim cuab yeej thiab muab cov khoom siv ua rau muaj cov proton-immanted 4H-Sic Epitaxial Wafers. Peb mam li pom cov yam ntxwv ntawm volt-amerere los kawm qhov kev ua tsis raws kev ua tau zoo vim kev txhaj tshuaj tiv thaiv kev sib txhaj tshuaj. Tom qab, peb pom qhov nthuav dav ntawm 1ssf hauv Electroluminescence (EL) cov duab tom qab thov hluav taws xob rau tus PIN diode. Thaum kawg, peb paub tseeb tias muaj txiaj ntsig ntawm kev txhaj tshuaj tiv thaiv kev sib raug ntawm kev nce nyiaj ntawm 1ssf nthuav.
Ntawm Daim Duab. Daim duab 1 Qhia cov yam ntxwv tam sim no (CVCS) ntawm tus lej PIN ntawm chav sov nrog thiab tsis muaj cov proton implantation ua ntej pulsed tam sim no. Tus Pin Diodes nrog cov qauv kev txhaj tshuaj zoo ib yam li kev txhaj tshuaj uas tsis muaj kev txhaj tshuaj txog kev ua tiav cov IV uas tau sib koom ua ke. Txhawm rau qhia qhov sib txawv ntawm kev txhaj tshuaj ntawm kev txhaj tshuaj, peb tau muab cov phiaj xwm voltage ntawm ib qho kev faib tawm tam sim no los ntawm ib txwm faib tawm los ntawm kab dotted. kab. Raws li tuaj yeem pom los ntawm cov peaks ntawm cov kab nkhaus, lub on-resistance ntawm cov koob tshuaj 1012 thiab 1016 cm-2, thaum lub PIN Peb kuj tau ua cov tshuaj tiv thaiv proton Yog li no, annaling ntawm 1600 ° C tom qab cog ntawm AL one yog cov txheej txheem tsim nyog los ntawm kev ua kom zoo ib yam li cov khoom siv los ntawm kev ua kom zoo ib yam li cov tshuaj tiv thaiv kab mob, uas ua rau muaj kev puas tsuaj rau kev ua kom zoo ib yam li cov tshuaj tiv thaiv kab mob Lub rov qab tam sim no zaus ntawm -5 V kuj tau nthuav tawm hauv daim duab S2, tsis muaj qhov tseem ceeb ntawm dodes nrog thiab tsis muaj kev txhaj tshuaj.
Cov yam ntxwv ntawm volt-ampere ntawm tus pin diodes nrog thiab tsis muaj cov protons nrog ntawm chav tsev kub. Cov lus dab neeg qhia tau cov koob tshuaj tiv thaiv.
Kev ntsuas zaus ntawm ncaj qha tam sim no 2.5 A / CM2 rau tus lej pin dodes nrog txhaj thiab tsis-txhaj cov protons. Cov kab dotted sib raug zoo rau cov kev faib tawm ib txwm.
Ntawm Daim Duab. 3 qhia tau ib daim duab EL ntawm tus PIN diode nrog qhov ceev tam sim no ntawm 25 A / CM2 tom qab voltage. Ua ntej thov cov pulsed tam sim no thauj, thaj chaw tsaus ntawm Diode tsis pom, raws li muaj nyob hauv daim duab 3. C2. Txawm li cas los xij, raws li qhia hauv Daim Duab. 3a, nyob rau hauv ib tug PIN diode yam tsis muaj proton cog cog, ntau txoj kab txaij txaij txaij nrog lub teeb pom kev tau pom tom qab thov hluav taws xob. Xws li cov pas nrig tsaus nti tau pom nyob rau hauv el cov duab rau 1ssf txuas ntxiv los ntawm BPD hauv Substrate28,29. Hloov chaw, qee qhov kev sib tw txuas ntxiv tau pom hauv tus lej Pin diodes nrog cov protons protons, raws li muaj nyob hauv Daim Duab 3B-d. Siv cov xoo hluav taws xob xoo, peb tau lees tias muaj cov ntawv sib tw hauv lub nroog thib ib (duab tsaus ntuj Nyob rau hauv cov nuj nqis 1 thiab 2. Yeeb yaj duab S3-S6 nrog thiab tsis muaj qhov chaw tsaus nti (lub sij hawm-sib dhos tsis muaj kev txhaj tshuaj thiab pom ntawm 1014 cm-2) kuj tau qhia hauv cov ntaub ntawv ntxiv.
Cov duab EL ntawm Pin Diodes ntawm 25 A / CM2 tom qab 2 teev ntawm kev ntxhov siab ntawm (b) 1012 CM-2, (c) 1016 cm-2 protons.
Peb tau suav qhov ceev ntawm kev nthuav dav 1ssf los ntawm kev xam cov dos loj, thiab muaj qhov ntom ntawm kev nthuav dav ntawm 1ssf yog qis dua li hauv qhov tsis-immanted pin.
Cov nqi nce ntxiv ntawm SF tus pin diodes nrog thiab tsis muaj proton implantation tom qab thau khoom nrog ib lub xeev tau muab peb lub sijhawm muaj peb lub ntsuas phoo).
Ua kom luv luv tus neeg nqa khoom lub neej tseem cuam tshuam kev nthuav dav ntxiv, thiab kev txhaj tshuaj tiv thaiv kev txhaj tshuaj txo tus nqa khoom lub neej32,36. Peb tau pom cov khoom nqa lub neej nyob rau hauv ib txheej ecitaxial txheej 60 μm tuab nrog txhaj cov protons ntawm 1014 cm-2. Los ntawm thawj lub tsev nqa khoom lub neej, txawm hais tias qhov tsis pom zoo txo ​​tus nqi rau ~ 10%, tom qab anealing restores nws li ~ 50%, raws li qhia hauv Daim Duab. S7. Yog li ntawd, tus neeg thauj khoom lub neej, txo vim muaj proton implantation, yog rov qab los ntawm kev kub ntxhov siab. Txawm hais tias qhov kev txo qis 50% txo qis lub neej tseem tsim kev tshaj tawm ntawm cov cab tsis muaj zog, uas yog feem ntau sib txawv ntawm kev txhaj tshuaj me me thiab tsis yog-immanted dodees. Yog li ntawd, peb ntseeg tias PD tog Anchoring plays lub luag haujlwm nyob rau hauv kev tiv thaiv 1ssf nthuav.
Txawm hais tias sims tsis pom hydrogen tom qab annaling ntawm 1600 ° C, raws li muaj cov txiaj ntsig ntawm cov lej ntawm 1 thiab 4. 3, 4. 3, 4. Nws yuav tsum raug sau tseg tias peb tsis tau lees tias muaj kev nce ntxiv nyob rau hauv on-lub xeev tiv taus vim mus elongation ntawm 1ssf tom qab nthwv dej tam sim no. Qhov no yuav yog vim yog neeg txhaum cai Ohmic neeg ua tau siv peb cov txheej txheem, uas yuav raug tshem tawm nyob rau yav tom ntej.
Hauv kev xaus, peb tau tsim lub quenching txoj kev rau kev txuas ntawm BPD rau 1HSF hauv 4H-sic pin siv proton cog ua ntej siv Fabrication. Lub deterioration ntawm I-v tus xeeb ceem thaum muaj kev cuam tshuam tsis tseem ceeb, tshwj xeeb yog cov muaj txiaj ntsig ntawm kev ua haujlwm ntawm 1ssf nthuav dav yog qhov tseem ceeb. Txawm hais tias nyob rau hauv txoj kev kawm no peb tau ua kom tuab rau cov kev ua kom pom tseeb rau qhov tob ntawm kev ua kom pom tseeb thiab siv rau lwm yam ntawm 4h-sic li. Cov nqi ntxiv rau cov cuab yeej siv ntaus ntawv thaum lub sij hawm ua kom pom tseeb, tab sis lawv yuav ua zoo ib yam li cov txheej txheem kab ke rau 4H-SIC fais fab fais fab. Yog li, proton cog ua ntej rau kev ua cuab yeej yog ib txoj kev muaj peev xwm rau kev siv cov khoom 4h-sic bipolol fais fab hluav taws xob yam tsis muaj lwm yam.
Ib 4-nti n-hom 4H-sic wafer nrog ib qho txheej txheej me ntawm 10 μm thiab pre-× 1016 cm-3 tau siv ua qauv. Ua ntej ua cov cuab yeej, h + ions tau cog rau hauv lub phaj nrog lub zog nrawm ntawm 0.95 mev ntawm chav tsev kub rau ib lub kaum sab xis kom lub phaj. Thaum lub sij hawm proton cog, lub ntsej muag ntawm ib lub phaj tau siv, thiab lub phaj muaj cov ntu tsis muaj thiab nrog cov tshuaj proton ntawm 1012, 1014, lossis 1016 cm-2. Tom qab ntawd, nyob rau ntawm cov koob tshuaj tiv thaiv ntawm 1020 thiab 1017 cm-° ntawm tag nrho cov wafer rau ib qho tob ntawm 1600 μm thiab 0.2 -0.5 μm thiab 0.2.2 μm thiab 0.2 ° ntawm cov carbon cap los ua cov txheej txheej ap txheej. -type. Tom qab, ib sab sab nraub qaum ni chim tau muab tso rau sab substrate, thaum ib tug 2.0 hli sib tiv thaiv tau muab tso rau ntawm cov txheej txheem ecitaxial sab. Thaum kawg, hu rau annealing yog nqa tawm ntawm qhov kub ntawm 700 ° C. Tom qab txiav cov wafefer rau hauv daim tawv, peb tau ua kev ntxhov siab thiab daim ntawv thov.
Cov yam ntxwv I-V ntawm cov ntaub qhwv ntsej muag ntawm lubricated Pin dodes tau pom siv HP4155B semiconductor parameter analyzer. Raws li kev ntxhov siab hluav taws xob, ib 10-millisecond pulsed tam sim no ntawm 212.5 A / CM2 tau qhia rau 2 teev ntawm ntau zaus ntawm 10 pulses / sec. Thaum peb tau xaiv qhov ceev qis dua tam sim no lossis ntau zaus, peb tsis tau saib 1ssf expansion txawm tias tus pin tsis muaj kev txhaj tshuaj tiv thaiv kev txhaj tshuaj. Thaum lub sij hawm cov cuab yeej siv hluav taws xob voltage, qhov kub ntawm tus pin diode yog nyob ib ncig ntawm 70 ° C tsis muaj cua sov, raws li qhia hauv daim duab S8. Cov duab electroluminescent tau tau ua ntej thiab tom qab kev ntxhov siab hluav taws xob ntawm qhov ceev tam sim no ntawm 25 A / CM2. SynchRotRo Reflector Nab ntsais ntsais koj, λ vector nyob rau hauv bluology, λ = 0.15 nd) ntawm AB8S2 yog -18 lossis 11-28 (Saib cov ntsiab lus). ).
Qhov ntsuas hluav taws xob ntau ntawm ib qho chaw ceev tam sim no ntawm 2.5 A / CM2 yog muab rho tawm nrog ib lub sijhawm ntawm 0.5 v hauv Daim duab. 2 Raws li CVC ntawm txhua lub xeev ntawm tus PIN diode. Los ntawm tus nqi ntawm cov kev ntxhov siab loj thiab cov qauv sib txawv ntawm kev ntxhov siab, peb tau npaj cov kab kev faib khoom hauv daim duab 2 siv cov kab sib luag hauv qab no:
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