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ʻO 4h-sic ua kālepaʻia ma keʻano he mea no ka mana semicononductor. Eia nō naʻe,ʻo ka hilinaʻi lōʻihi o nā mea hana o 4h-sic he mea paʻa i kā lākou hana ākea, a me ka pilikia koʻikoʻi o ka nui o nā mea kūʻai akuʻo 4h-sic. ʻO kēia hōʻinoʻia e ka mea i hōʻikeʻia e ka shockley hoʻokahi shockley (1ssf) ka hoʻopiʻiʻana o nā unahi mokulele mokulele ma 4h-sic crystals. Eia, ke kau nei mākou i kahi ala no ka hoʻopiliʻana i ka hoʻonuiʻana i ka 1ssf 1ssf i nā proters e hiki mai ana ma 4h-sic. ʻO nā Doidas Fabricated ma nā wafers me ka pohō pron e hōʻike i nāʻano likeʻole o kēia manawa i nāʻano likeʻole o nā kiʻina likeʻole. I ka hoʻohālikelikeʻana, ua mālama maikaʻiʻia ka hoʻonuiʻana o ka 1ssf No laila,ʻo ka hoʻopiʻiʻana o nā protons i loko o ka 4h-sic epitaxial Wafers heʻano hana kūpono no ka mālamaʻana i nāʻoihanaʻo Bipolar. Hāʻawi kēia hopena i ka hoʻomohalaʻana i nā mea hilinaʻi koʻikoʻi 4h-sic.
Uaʻike nuiʻiaʻo Silcon Carbide (SIC) e like me kahi mea semiconducket no ka mana kiʻekiʻe, kiʻekiʻe e hana i nā mea hoʻokūkū kiʻekiʻe. Nui ka nui o nā postypes sec 4h-sic wafers me kahi animela o ka nui o 6 mau iniha i kēia manawa i ke kālepaʻana a hoʻohanaʻia no ka hana nui o ka mana semiconductor3. ʻO nā'ōnaehana Traction no nā kaʻa uila a me nā kaʻa i hanaʻia e hoʻohana ana i nā polokalamu 4h-Sic4.5 Mana Semiconductor. Eia nō naʻe, ua pilikia nā mea hana 4h-sic i nā pilikia koʻikoʻi lōʻihi e like me ka mea nui o ka creakdric creakdut Ua loaʻaʻia kēiaʻano biphar i loaʻa ma mua o 20 mau makahiki i hala aku nei a lōʻihi ka lōʻihi o ka pilikia ma keʻano o ka hanaʻana i nā hana uila.
ʻO ka debopidation bipolar i hoʻokumuʻia e ka mea nānā shockley shockley (1ssf) i nā crystations 4h-spis) e hoʻonui ai i ka loaʻa kālā No laila, inā e hoʻopiliʻiaʻo BPD Expansion iā 1ssf,ʻo 4h-sic mau mea hana mana i hiki ke nānāʻia me kaʻole o bipolar degradation. Ua hōʻikeʻia kekahi mau ala e hāʻawi i ka hoʻolaha BPD BPD, e like me BPD i ka neʻeʻana o kaʻaoʻao o kaʻaoʻao (TED) 20,24,24. I nā wafers sic hou aku nei,ʻo ka BPD i hōʻikeʻia ma ka substrate aʻaʻole i loko o ka hoʻololiʻana o BPD i ka hopena o ka hoʻomakaʻana o ka hopena o ka hopena o ka epitaxial. No laila,ʻo ka pilikia o ke koena o Bipolar ka mea e hoʻoili ai i ka bpd i loko o ka bpd i loko o 25,26,2,2. Ka hoʻokomoʻana i kahi "hoʻonohonoho hou i ka papa inoa" ma waena o ka pahu pahu aʻo ka mea i hoʻohālikelikeʻia e ka hopena o ka fpdron ma ka hoʻonuiʻana i ka pona Ka hōʻemiʻana i ka nui o nā helu o nā flight-hole i hōʻemi i ka ikaika o ke kaʻa o Redg e hiki i ka bpd i ka substration costratement. Pono e hoʻomaopopoʻia i ka hoʻokomoʻana o kahi papa i nā kumukūʻai hou i ka hanaʻana o ka mea e hiki ai ke hoʻopau i ka nui o ka life. No laila, aia kekahi mau pono ikaika e hoʻomohala i nāʻano hana hou e hoʻokō ai i kahi kaulike maikaʻi ma waena o nā kumukūʻai hana a me ka hopena.
No ka mea,ʻo ka hoʻonuiʻana o ka BPD i ka 1ssf e pono ai ka neʻe o ka neʻeʻana o nā'āpana'āpana ʻOiaiʻo PD PD PINNING e nā mea hao i hōʻikeʻia, ua hōʻikeʻia nā FPD i ka 4h-sic subsrates ma kahi o 5 μM mai ka papa o ka papa. Eia kekahi, mai ka hikiʻana o ka diffusion e hoʻohana i nā mea hao ma SIC he mea liʻiliʻi loa, he mea paʻakikī no nā mea hao e hoʻokaʻawale i loko o ka subferaties34. Ma muli o ka nui o ka nui o ka nui o nā metala, he paʻakikī hoʻi o nā metala o nā metala. I ka hoʻohālikelikeʻana, ma keʻano o ka hydrogen No laila, inā e pili ana ka hoʻopiʻi proton i ka pd pink, a laila hiki ke hoʻohanaʻia e mālama i ka hoʻolaha bpd i ka substrate. Eia nō naʻe, hiki i ka hoʻopiʻi proton ke hōʻino iā 4h-sic a hopena i ka hoʻemiʻana i ka hana i hōʻemiʻia eccing37,38,39,39.
Ke lanakila nei i ka hoʻokaʻawaleʻana o ka hana ma muli o ka hoʻopiʻiʻana i ka hoʻolahaʻana ma keʻano he nui e pili ana i ka hanaʻana i kaʻoihana ʻaʻole lawa eʻike i ka pinning o ka pr e hoʻohana i nā sims. No laila, ma kēia aʻoʻana, ua hoʻopiʻi mākou i nā pale i hoʻopiʻiʻia i loko o ka 4h-sic epitaxial Wafe ma mua o ke kaʻina hana o ka hana. Ua hoʻohana mākou iā PIN DOIDES e like me nā hana hoʻokolohua hoʻokolohua a me nā mea i hanaʻia iā lākou ma luna o nā mea e pili ana i ka proton -h-sic. ʻIke mākou i nā hiʻohiʻona Volt-Amperatistic e aʻo i ka degradation o ka hana ma muli o ka proton proton. Ma hope aku, ua nānā mākou i ka hoʻonuiʻana o 1ssf i nā mea uila ʻO ka hope loa, ua hōʻoia mākou i ka hopena o ka proton injection ma ka papa'āina o ka hoʻonuiʻana o ka lā 1ssf.
Ma ke kula. Hōʻike ka kiʻi 1 ʻO nā Doidas me ka proton injection hōʻike hōʻike hōʻike hōʻike e like me nā diods me kaʻole o ka proton me kaʻole o ka proton i loko o nā doice. E hōʻike i kaʻokoʻa ma waena o nā kūlana injection, ua kiʻi mākou i ka nui o ka voltage ma kahi o ka nui o ka helu helu 2 ma kahiʻano maʻamau. laina. E like me kaʻikeʻia mai nā peʻa o nā pihi, ka nui o ka paleʻana i nā doses he 1012 cm-2. Hana pūʻia mākou i ka hoʻopiʻiʻana ma hope o ka laweʻana i nā kiʻi kiʻi o nā kiʻi i hōʻikeʻia ma muli o ka hōʻikeʻana ma mua o ka StudLant No laila,ʻo ka hoʻonāukiukiʻana ma 1600 ʻO ka mea hou aʻe i kēia manawa ma -5 v i hōʻikeʻia ma ke kiʻi s2,ʻaʻoheʻokoʻa nui ma waena o nā diodes me ka loaʻaʻole o ka hoʻopiliʻana i ka down.
ʻO nā hiʻohiʻona Volt-AMPERE o nā pahu pahu me kaʻole o nā mea i hōʻoleʻoleʻia i ka mahana o ka lumi. Hōʻike ka moʻolelo i ka loaʻaʻana o nā protons.
ʻO nā manawa maʻamau ma keʻano he pololei i kēia manawa 2.5 A / cm2 no nā doida i hoʻopaʻaʻia a iʻole nā mea i hoʻopaʻaʻiaʻole. ʻO ka laina e pili ana i ka mokuahi e pili ana i ka māhele maʻamau.
Ma ke kula. 3 Hōʻike i kahi kiʻi El e El Doide me kahiʻano o kēia manawa o 25 a / cm2 ma hope o ka uila. Ma mua o ka hoʻopiliʻana i ka hoʻoukaʻana i ka hoʻoukaʻana i kēia manawa,ʻaʻole i nānāʻia nā wahiʻeleʻele o ka Diode, e like me ka hōʻikeʻana ma ke kiʻi 3. C2. Eia nō naʻe, e like me ka hōʻikeʻia ma Fig. 3a, ma kahi pahu kīʻole me kaʻole o ka hoʻopiʻiʻana, he nui nā wahi ākea ākea me ka hoʻohanaʻana i nā kihi o nā kukui. Ua nānāʻia nā wahiʻeleʻele o ke kihi ma nā kiʻiʻo El i nā kiʻi no 1ssf e hoʻonui ana mai ka bpd i loko o ka bpd i loko o ka bpd i loko o ka bpd i loko o ka bpd in the substrate28,29. Ma kahi, ua nānāʻia kekahi mau hewa ākea i nā mea i hoʻopaʻaʻia ma nā diodes me nā protons implanted, e like me ka hōʻikeʻia ma Fig. 3b-d. Ke hoʻohana nei i ka TOPOCTOCHTOCHICHT Hōʻikeʻiaʻo PIN Diodies ma nā kiʻi 1 a me 2. Nā wikiō S3-S6 me kaʻole o nā kiʻi o ka PIN ACTERS ACTERS.
ʻO nā kiʻi El i nā kiʻiʻo PIN ma 25 a / cm2 ma hope o 2 mau hola o ke kaumaha (b
Ua helu mākou i ka nui o ka hoʻonuiʻana i ka 1ssf ma ka heluʻana i nā wahiʻeleʻele me ka hoʻonuiʻiaʻana o ka 112 cm-2.
Hoʻonui i nā hōʻemi o nā pahu pahu sf
Hoʻopiliʻia ka pōkole i ke ola laweʻana i ke olaʻo ka hoʻonuiʻiaʻana, a me ka injector injection i hōʻemi i ke ola lawena -2,36. Ua nānā mākou i nā mea lawe lawe kaʻa i loko o kahi papa hana epitaxial 60 μM i nā pale i hoʻopaʻaʻia me 1014 cm-2. Mai ka ola mua mua,ʻoiai ke hōʻemi nei ka mea i ka waiwai i ka waiwai i ~ 10%, e like me ka mea i hōʻikeʻia ma F7. No laila,ʻo ke kaʻa kaʻaahi ola, hoʻemiʻia ma muli o ka hoʻopiʻi proton ʻOiai he 50% hōʻemi i ka hana laweʻana i ke ola laweʻana i keʻano o nā mea kanu,ʻo nāʻano likeʻole o ka laweʻana ma waena o nā mea lawena i waena o nā mea laweʻoleʻia ma waena o nā mea hanaʻole ma waena o nā mea i hoʻopaʻaʻia a iʻole No laila, manaʻoʻiʻo mākou e pāʻani ana mākou PD Anchoring i kahi hana i loko o ka hōʻoiaʻana i ka hoʻonuiʻana i ka 1ssf expansf.
ʻOiaiʻaʻole iʻikeʻo Sims i ka hydrogen ma hope o ka hoʻokaʻawaleʻana i ka 1600 c, i hōʻikeʻia ma ka heluʻana o nā mea hōʻike ma mua. i hoʻopaʻaʻia e ka hoʻohālikelikeʻana. Pono e hoʻomaopopoʻiaʻaʻole mākou i hōʻoia i ka hoʻonuiʻana i ka pale o ka moku'āina ma muli o ka elongation o 1ssf ma hope o kahi ukana i hala. Hiki paha i kēia ma muli o nā pilina Omoper Follow i hanaʻia e hoʻohana ana i kā mākou kaʻina hana, e hoʻopauʻia i ka wā e hiki mai ana.
I ka hopena, ua kūkulu mākou i kahiʻano o ke kauʻana no ka hoʻonuiʻana i ka bpd i 1ssf ma kahi o ka mea kūʻai aku ma mua o ka hoʻopiliʻana i ka proton. ʻO ka hopena o ka hōʻikeʻana o ka I-V Chacy i ka wā o ka hoʻopiʻi proton,ʻoi aku ka nui o ka proton. ʻOiai ma kēia noiʻiʻana i kā mākou hanaʻana i nā mea nui o 10 μm PIN i ka hoʻopiʻiʻana i nā kūlana o ka 10 μM Pono nā kumukūʻai hou no nā mea hana uila i ka wā o ka pohō pron, akā e like lākou me ke kaʻina hana no ka 4h-sic nui. No laila,ʻo ka hoʻopiʻi proton ma mua o ke kaʻina hana e hana ai he ala e pono ai no ka hanaʻana i nā mea kūʻai aku 4h-sic bipolar.
A 4-inch n-type 4h-sic fofer i kahi pālahalaha o ka epitacial i ka nui o 10 μm a me kahi mea hāʻawi aku i keʻano o ka 1 × 1016 cml-3 Ma mua o ka hoʻoiliʻana i ka polokalamu, H + IS i hoʻokomoʻia i loko o ka pā me kahi o ka nui o ka ea o ka papa. I ka wā o ka proton implantant, ua hoʻohanaʻia kahi papa ma luna o kahi papa, a ua loaʻa ka papa ma waho o ka pā o 1012, 1014, a 1016 cm-2. A laila, a Alon me Proton a me Proton a 1020 a me 1017 cm-3 i ka mea e hana ai i ka pale o ka papa. -Type. Ma hope aku, ua kauʻia kahi pākuhi o ke keleponaʻo nikle i kaʻaoʻao,ʻoiaiʻo ka helu code e pili ana i ka kiʻi paʻi kiʻi paʻi kiʻiʻia e ka kiʻi paʻi paʻi. ʻO ka hope loa, ua hoʻounaʻiaʻo Annealing i kahi mahana o 700 ° C. Ma hope o kaʻokiʻana i ka holoiʻana i nā pahu, hana mākou i keʻano kaumaha a me ka noi.
ʻO nā hiʻohiʻona I-V E like me ke kaumaha o ka uila Ke koho mākou i kahi haʻahaʻa haʻahaʻa haʻahaʻa a iʻole ka pinepine,ʻaʻole mākou i nānā i ka hoʻonuiʻana o ka 1ssf 1 I ka wā o ka uila uila,ʻo ka mahana o ka pahuʻo Diode ma kahi o 70 ° C me ka manaʻoʻole e hōʻike ana i keʻano s8. Ua loaʻa i nā kiʻi Electrolumscentcentcentcent ma mua a ma hope o keʻano uila uila ma kahiʻano o nā makahiki he 25 a / cm2. Synchrotron Synchrotron Gozing Stazing X-Ray Topichical X-Ray Beam (λ ).
ʻO ka pinepine o ka Voltage ma kahi o keʻano o keʻano o keʻano o ka ukuʻana o 2.5 A / CM2 i laweʻia me kahi kikowaena o 0.5 v i Fig. 2 E like me ka CVC o kēlā me kēia kūlana o ka papa inoaʻo PIN DOODE. Mai ka waiwai o ke kaumaha o ke kaumaha a me ka hoʻokaʻawaleʻana i keʻano o ke kaumaha
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