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An yi kasuwanci 4H-SIC a matsayin kayan don na'urorin iko na Seficondutor. Koyaya, dogaro da na'urori na dogon lokaci na na'urori na 4h-Sic wani lamari ne mai ban sha'awa, kuma mafi mahimmancin wahalar na'urori na na'urori 4h-Sic ne. Wannan lalacewar ta haifar da laifin girgizawa guda madaidaiciya (1ssf) ta yada fasahar jirgin ruwa na basal a cikin lu'ulu'u-SIC lu'ulu'u. Anan, muna ba da shawara ga hanyar hana fadada 1ssf ta hanyar dasa protons akan wafons 4h-Sic-Sic Epitaxial Wafers 4h-Sic-Sic-Sic-Sic-Sic-Sic-Sic-Sic-Sic-Sic-Sic. Hanyoyin filaye akan Wafers tare da implantation na Proonage sun nuna halaye iri ɗaya na yau da kullun azaman abubuwan ɓoye ba tare da proon proon. Sabanin haka, fadakarwa na 1SF ana shafe shi sosai a cikin PIN-ON PIN DOOEE. Don haka, ɗaukar hoto a cikin wafers 4h-Sic-Sic Epitaxial hanya ce mai tasiri ga lalata lalata na'urori na 4h-SIC Power na'urori na'urori. Wannan sakamakon yana ba da gudummawa ga ci gaban kayan aikin yau da kullun 4h-Sic.
Silicon Carbide (Sic) an gano shi a matsayin kayan semiconduttor don babban iko, kayan aikin striction semictiontor ɗin da zasu iya aiki a cikin mahalli na m. Akwai yawancin pololypes da yawa, daga cikin wanne 4H-yana da kyakkyawar kyakkyawan na'urori na kayan aikin ƙwallon ƙafa kamar manyan wuraren motsi da kuma filin hutu mai ƙarfi na lantarki mai ƙarfi. 4h-SIC Wafers tare da diamita na inci 6 ana tallata wa inci 6 kuma ana amfani dashi don samar da kayan aikin iko na SeSticoncicor na Power. Tsarin tractics don motocin lantarki da jiragen kasa sun ƙirƙira amfani da 4H-SIC4.5 Power na'urori na'urori na'urorin. Koyaya, na'urorin 4H-SIC har yanzu suna fama da maganganu na dogaro na dogon lokaci na dogon lokaci ko kuma gajeriyar hanya, dubu 6,1 na wanne ne daga cikin mahimman ayyukan da ke cikin Bipolar2,8,9,10,1010,1010,10; Wannan an gano wannan lalata da shekaru 20 da suka gabata kuma ya daɗe da matsala a cikin abubuwan narkewar na'urar.
Bipolar degradation is caused by a single Shockley stack defect (1SSF) in 4H-SiC crystals with basal plane dislocations (BPDs) propagating by recombination enhanced dislocation glide (REDG)12,13,14,15,16,17,18,19. Sabili da haka, idan aka sanya fadada BPD zuwa 1ssf, na'urorin wutar lantarki 4H-SIC za a ƙirƙira ba tare da lalata bapolari. An ruwaito hanyoyi da yawa don kashe yaduwar BPD, kamar BPD don ɗaukar hoto (TED) canji 20,21,22,23,24. A cikin sabon prop epitaxial wafers, BPD galibi yana nan a cikin substrate kuma ba a cikin repitaxial ba saboda tubar BPD don ted farkon matakin ci gaban farko. Sabili da haka, sauran matsalar lalacewar Bipolalar shine rarraba BPD a cikin Substrate 25,26,27. Saukar Layer na "Haɗin kai tsaye" tsakanin matsanancin Layer Layer da subrate an gabatar da hanyar hana BPD a cikin Layer Layer da Sic Substrate. Rage yawan nau'i-nau'i na nau'i-rami yana rage ƙarfin tuki na Redg zuwa BPD, don haka rafin ƙarfafa na iya murƙushe lalata bebe. Ya kamata a lura cewa shigar da wani Layer ya ƙunshi ƙarin farashi a cikin samar da wafers yana da wuya shigar da nau'in ramin rami ta hanyar sarrafawa kawai ikon ɗaukar nauyin ɗaukar hoto. Sabili da haka, har yanzu akwai buƙatar haɓaka sauran hanyoyin hana su don cimma daidaito mafi kyawun kuɗi tsakanin farashin na'urori da yawa.
Saboda fadada BPD zuwa 1ssf na buƙatar motsi na m dislocations (PDs), PD PD ne mai kamshi mai kyau ga lalata lalata bipolal. Kodayake an ruwaito pd Pinning ta hanyar ƙarfe da karfe an ruwaito, FPDs a cikin 4H-SIC subbrates suna kan nesa daga sama da 5 μm daga saman Layer Layer. Bugu da kari, tunda yaduwa mai inganci na kowane ƙarfe a cikin Sic yana da ƙanana, yana da wuya ƙwararrun ƙwararrun ƙarfe don yaduwa cikin substrate34. Sakamakon manyan atomic taro na metals, ion sanya kayan metals shima wuya. Sabanin haka, a yanayin hydrogen, mafi kyawun kashi, ana iya lalata shi zuwa cikin 4H-SIC zuwa zurfin sama da 10 μm ta amfani da letterrator na MEV-ta amfani da mai lada na Mev-ta amfani da letterrator na MEV-ta amfani da mai lada na Mev-ta amfani da letterrator. Saboda haka, idan proton imlatation yana shafar Pd PD PD PD, to ana iya amfani dashi don kashe yaduwar BPD a cikin substrate. Koyaya, proon oplantation na iya lalata 4h-toic da kuma haifar da rage aikin na'urorin 37,38,39,40.
A kan siffa Hoto na 1 yana nuna halaye na lantarki na yanzu (cvcs) na kayan adon fil a ɗakin zafin jiki a yankuna tare da ba tare da proon da ba tare da proon da aka yi ba. Filin zane tare da allurar samar da proton ta nuna kwatancin murɓayyu masu kama da abubuwan allura ba tare da allurar sakamako ba, duk da cewa an raba halayen IV tsakanin abubuwan da aka yi. Don nuna bambanci tsakanin yanayin rashin allura, mun yi makirci mitar voltage a cikin 100 na rarraba ƙididdiga kamar yadda aka rarraba al'ada ta hanyar da aka rarraba al'ada. layi. Kamar yadda za a iya gani daga kololukan masu jujjuyawar, kan-juriya dan kadan kadan a Pason na 1012 cm-2, yayin da PIN-2 yana nuna kusan halaye iri ɗaya kamar ba tare da ba tare da ba tare da ba tare da ba tare da ba tare da ba tare da ba tare da ba tare da ba tare da ba tare da ba tare da ba tare da ba tare da ba tare da ba tare da ba tare da ba tare da ba tare da ba tare da ba tare da ba tare da ba tare da ba tare da ba tare da ba tare da ba tare da ba tare da ba tare da ba tare da ba tare da ba tare da ba tare da ba tare da ba tare da ba tare da nuna cewa ba tare da Proon Conon. Mun kuma yi abin da ake amfani da shi na proton bayan qiimar zane-zane na Pin waɗanda ba su nuna shirye-shiryen suturar fil ba saboda yadda aka nuna a cikin S1 kamar yadda aka bayyana a cikin binciken da suka gabata. Sabili da haka, ana samun fannoni a 1600 ° C bayan damfani na ions shine tsari mai mahimmanci don kunna abubuwan da ake buƙata na alasta, wanda zai iya gyara CVCS daidai da kuma wanda ba a girbe profis ɗin da ba a girbi a cikin kayan aikin ba. Hakanan an gabatar da mita na yanzu a -5 VI kuma da aka gabatar a cikin Hoto na S2, babu wani mahimmin bambanci tsakanin ninɓayyen abubuwa da kuma ba tare da allurar proton ba.
Halin Volt-ampere na zane-zane tare da kuma ba tare da allura ba a cikin yanayin zazzabi. Legend yana nuna kashi na Protons.
Mitar kai tsaye a halin yanzu 2.5 a / cm2 don filolin zane tare da allurar da ba a allura ba. Layin da aka zana ya dace da rarraba al'ada.
A kan siffa 3 Nuna El hoto na PIN Doode tare da yawan 25 na 25 a / cm2 bayan wutar lantarki. Kafin amfani da nauyin na yanzu, yankuna masu duhu na diode ba a lura ba, kamar yadda aka nuna a hoto na 3. C2. Koyaya, kamar yadda aka nuna a cikin siffa. 3A, a cikin PIN Diode ba tare da opon dillali ba, yankuna masu launin duhu da dama tare da gefuna masu haske. Irin waɗannan yankuna masu duhu sun lura da yankuna masu duhu a cikin EL don 1SF mantawa daga BPD a cikin BPD a cikin substrate28,29. A maimakon haka, an lura da wasu abubuwa masu tarin abubuwa a cikin filoli masu ƙanshin hoto tare da sahun da aka yiwa, kamar yadda aka nuna a cikin siffa 3B-D. Yin amfani da littafin X-Ray, mun tabbatar da kasancewar prs wanda zai iya motsawa daga BPD zuwa ga allon adireshin da ke cikin eldf BPD a cikin subon. El Hotunan wasu hotuna An nuna masu yawa a cikin Figures 1 da 2. Bidiyo S3-S6 Tare da fannoni masu duhu kuma ba a nuna su a 1014 cm-2) ana nuna su a cikin ƙarin bayani.
Hotunan el na kayan kwalliya a 25 a / cm2 bayan 2 hours na lantarki danniya (a) ba tare da promail 2 da (d) 1016 cm-2 da (d) cm-2 ba.
Mun lissafta yawan fadada 1ssf ta hanyar lissafin duhu yankuna tare da ƙara 1ssf yana raguwa da yawa a cikin PIN non da aka shirya.
Extraesara yawan adadin SF zane-zane da ba tare da ɓoyewa ba bayan an ɗora shi da abin da aka buga da na yanzu (kowace jiha ta haɗa da shirye-shirye uku da aka ɗora guda uku).
Gajarta da mai ɗaukar nauyi har ila yau yana rinjayar da bautar faɗaɗa, da allurar ɓoyewa ta rage ɗaukar ɗaukar nauyi 32,36. Mun lura da diyyar ci gaba a cikin wani epitaxial lokacin farin ciki tare da allurar sa na 1014 cm-2. Daga tsawon farkon tsawon rayuwarsa, kodayake da implant yana rage darajar zuwa ~ 10%, wanda ya biyo baya ya dawo da shi zuwa ~ 50%, kamar yadda aka nuna a cikin siffa S7. Don haka, a matsayin mai ɗaukar nauyi, ya rage saboda oplantation dafaffen, an mayar da shi ta hanyar matsanancin zafin jiki. Kodayake ragi na 50% cikin rayuwa mai ɗaukar kaya kuma yana hana yaduwar ɗamara, wanda ke faruwa ne kawai ƙananan bambance-bambance ne tsakanin allura da ba a yanke su ba. Sabili da haka, mun yi imani da cewa PD anchoring yana taka rawa a cikin inabi na 1ssf.
Ko da yake Sims bai gano hydrogen ba bayan an gano cewa a cikin 1600 ° C, kamar yadda aka nuna a cikin binciken da aka gabatar a saman binciken Sims (2 × 10116 Cm-3) ko kuma lahani na lalacewa implantation. It should be noted that we have not confirmed an increase in the on-state resistance due to the elongation of 1SSF after a surge current load. This may be due to imperfect ohmic contacts made using our process, which will be eliminated in the near future.
A ƙarshe, mun kirkiro hanyar tsawaita da BPD zuwa 1ssf a cikin filayen fil na 4H-Sic a cikin kayan maye kafin ƙirar na'urar. Deterioration na i-v hali a lokacin da Proon implantation, musamman a wani Pason kashi na 1012 cm-2, amma sakamakon hana fadakarwa 1ssf yana da mahimmanci. Kodayake a cikin wannan binciken da muke ƙirƙiro 20 μm lokacin da ake amfani da shi zuwa zurfin yanayi na 10 μm, har yanzu yana yiwuwa a ƙara inganta yanayin ƙirƙirar na'urori na proplant. Yawan farashi don haɓakar ƙirar na'urar a lokacin proton da ke haifar ya kamata a bincika, amma za su yi kama da waɗanda don na'urori ion alonar alion, wanda shine babban tsarin ƙirar don na'urorin wutar lantarki na 4h-SIC. Don haka, Picon Prodlantation kafin sarrafa na'urar hanya ce mai yuwuwar hanyar ƙirƙira na'urorin wuta 4H-Sic ba tare da yanke hukunci ba.
A 4-inch nau'in wafer 4h-Sic wafer tare da waferan da aka shirya na μm na 10 μm da mai ba da gudummawa doping maida hankali ne na 1 × 10116 cm-3 cm-3 cm-3 cm-3 cm-3 cm-3 cm-3 cm-3 cm-3 cm-3 cm-3 cm-3 cm-3 cm-3 cm-3 cm-3 cm-3 cm-3 cm-3 ne a matsayin samfurin. Kafin aiwatar da na'urar, H + ions an sanya shi cikin farantin karfe tare da matsakaitar hanzari na 0.95 Mev a dakin zafin jiki zuwa zurfin kusurwa zuwa farfajiya na al'ada. A lokacin da aka gabatar a lokacin da aka gabatar, abin rufe fuska a kan farantin da aka yi amfani da shi, kuma farantin yana da sassan ba tare da kuma tare da proton kashi na 1012, 1014, ko 1016 cm-2. Bayan haka, Al} ions tare da allurai na 1020 da 1017 cm-3 an dasa 101 °. -type. Bayan haka, an saka wani gefen a gefe na gefe a gefe, yayin da 2.0 mm × 2.0 mm × 2.0 Mm up Boxbrained by Postetaxial gefen gefen. A ƙarshe, ana yin saduwa da annanting ana aiwatar da shi a zazzabi na 700 ° C. Bayan yankan wafer a cikin kwakwalwan kwamfuta, mun aiwatar da halayen damuwa da aikace-aikace.
The voltage frequency at a forward current density of 2.5 A/cm2 is extracted with an interval of 0.5 V in fig. 2 A cewar CVC ta kowace halin na PIN. Daga ma'anar danniya na danniya vave da daidaitattun karkatarwa, muna shirya tsarin rarraba tsari na al'ada a cikin tsari na Dubid da aka yi amfani da su:
Werner, Mista & Fahrner, wunk bita kan kayan, microensoors, tsarin da na'urori don aikace-aikacen babban-zafi da kuma aikace-aikacen yanayin yanayin zafi. Werner, Mista & Fahrner, wunk bita kan kayan, microensoors, tsarin da na'urori don aikace-aikacen babban-zafi da kuma aikace-aikacen yanayin yanayin zafi.Werner, Mista da farner, ta ta fitar da abubuwan da aka yi, microsends don aikace-aikace a cikin babban zazzabi da kuma mama. Werner, Mista & Fahrner, ken 的, 微传感器, 的 的 评论. Werner, Mr Fahahrner, wanna bita da kayan, Microsendoenssoors, tsarin da na'urori da na'urori masu yawan zazzabi da aikace-aikacen babban yanayin muhalli.Werner, Mista da Forner, ta ta huɗa abubuwa na kayan, Microsensididdigar da na'urori don aikace-aikace a babban yanayin zafi da m.Ieee Trans. Masana'antu na masana'antu. 48, 249-257 (2001).
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Lokaci: Nuwamba-06-2022
