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4H-SiC an tallata shi azaman abu don na'urorin semiconductor mai ƙarfi. Koyaya, amincin dogon lokaci na na'urorin 4H-SiC shine cikas ga faɗuwar aikace-aikacen su, kuma mafi mahimmancin matsalar amincin na'urorin 4H-SiC shine lalatawar bipolar. Wannan lalata yana faruwa ne ta hanyar kuskuren Shockley stacking (1SSF) yaduwa na basal jirgin sama a cikin lu'ulu'u na 4H-SiC. Anan, muna ba da shawarar wata hanya don murkushe haɓaka 1SSF ta hanyar dasa protons akan wafers na 4H-SiC na epitaxial. PiN diodes da aka ƙirƙira akan wafers tare da dasa proton sun nuna halaye iri ɗaya na ƙarfin lantarki kamar diodes ba tare da dasa proton ba. Sabanin haka, an danne haɓakar 1SSF yadda ya kamata a cikin diode da aka dasa na proton. Don haka, dasa protons a cikin 4H-SiC epitaxial wafers hanya ce mai inganci don murkushe lalatawar na'urorin wutar lantarki na 4H-SiC yayin kiyaye aikin na'urar. Wannan sakamakon yana ba da gudummawa ga haɓaka na'urorin 4H-SiC abin dogaro sosai.
Silicon carbide (SiC) an san shi da yawa azaman kayan aikin semiconductor don babban iko, na'urori masu saurin mitar semiconductor waɗanda zasu iya aiki a cikin matsanancin yanayi1. Akwai nau'ikan SiC da yawa, daga cikinsu 4H-SiC yana da kyawawan kayan aikin semiconductor na zahiri kamar babban motsi na lantarki da fashewar filin lantarki mai ƙarfi2. 4H-SiC wafers tare da diamita na inci 6 a halin yanzu ana sayar da su kuma ana amfani da su don yawan samar da na'urori masu sarrafa iko3. An ƙirƙira tsarin jigilar motocin lantarki da jiragen ƙasa ta amfani da na'urori masu sarrafa wutar lantarki 4H-SiC4.5. Duk da haka, na'urorin 4H-SiC har yanzu suna fama da matsalolin dogara na dogon lokaci irin su rushewar dielectric ko gajeren lokaci, 6,7 wanda daya daga cikin muhimman al'amurra masu mahimmanci shine lalatawar bipolar2,8,9,10,11. An gano wannan gurɓacewar yanayi sama da shekaru 20 da suka gabata kuma an daɗe ana samun matsala a ƙirƙira na'urar SiC.
Lalacewar Bipolar yana haifar da lahani guda ɗaya na Shockley stack (1SSF) a cikin lu'ulu'u na 4H-SiC tare da ɓarnawar jirgin sama na basal (BPDs) ta hanyar haɓaka haɓakar haɓakar ƙazantawa (REDG) 12,13,14,15,16,17,18,19. Sabili da haka, idan an dakatar da fadada BPD zuwa 1SSF, ana iya ƙirƙira na'urorin wutar lantarki na 4H-SiC ba tare da lalata bipolar ba. An ba da rahoton hanyoyi da yawa don murkushe yaduwar BPD, irin su BPD zuwa sauye-sauyen Edge Edge (TED) 20,21,22,23,24. A cikin sabuwar SiC epitaxial wafers, BPD yafi kasancewa a cikin substrate kuma ba a cikin epitaxial Layer ba saboda canza BPD zuwa TED a lokacin farkon matakin girma na epitaxial. Sabili da haka, matsalar da ta rage na lalata bipolar ita ce rarraba BPD a cikin ƙananan 25,26,27. An ba da shawarar shigar da "ƙarfafa ƙarfafawa mai haɗawa" tsakanin ɗigon ɗigon ruwa da ɗigon ruwa a matsayin ingantacciyar hanya don murkushe fadada BPD a cikin substrate28, 29, 30, 31. Wannan Layer yana ƙara yuwuwar sake haɗawa biyu na electron-rami a cikin epitaxial Layer da SiC substrate. Rage adadin nau'i-nau'i-nau'i-nau'i-nau'i na lantarki yana rage ƙarfin tuƙi na REDG zuwa BPD a cikin ma'auni, don haka haɗin gwiwar ƙarfafawa zai iya kashe lalatawar bipolar. Ya kamata a lura cewa shigar da Layer yana haifar da ƙarin farashi a cikin samar da wafers, kuma ba tare da shigar da Layer ba yana da wuya a rage adadin nau'i-nau'i na electron-rami ta hanyar sarrafa kawai ikon mai ɗaukar kaya a rayuwa. Sabili da haka, har yanzu akwai buƙatu mai ƙarfi don haɓaka wasu hanyoyin murkushewa don cimma ingantacciyar daidaituwa tsakanin farashin kera na'urar da yawan amfanin ƙasa.
Saboda tsawo na BPD zuwa 1SSF yana buƙatar motsi na ɓarna na ɓangarori (PDs), haɗa PD wata hanya ce mai ban sha'awa don hana lalata bipolar. Ko da yake an ba da rahoton pinning PD ta ƙazantattun ƙarfe, FPDs a cikin 4H-SiC substrates suna cikin nisa fiye da 5 μm daga saman Layer epitaxial. Bugu da kari, tun da yawan yaduwa na kowane karfe a cikin SiC yana da kankanta sosai, yana da wahala ga dattin karfe ya yadu a cikin substrate34. Saboda da in mun gwada da manyan atomic taro na karafa, ion implantation na karafa shi ma yana da wahala. Sabanin haka, a cikin yanayin hydrogen, mafi ƙarancin kashi, ions (protons) za a iya dasa su cikin 4H-SiC zuwa zurfin fiye da 10 µm ta amfani da na'ura mai sauri na MeV. Saboda haka, idan dasa proton ya shafi PD pinning, to ana iya amfani dashi don kashe yaduwar BPD a cikin substrate. Koyaya, dasa proton na iya lalata 4H-SiC kuma yana haifar da rage aikin na'urar37,38,39,40.
Don shawo kan lalacewar na'urar saboda dasa proton, ana amfani da zafi mai zafi don gyara lalacewa, kama da hanyar da aka saba amfani da ita bayan shigar da ion mai karɓa a cikin sarrafa na'urar1, 40, 41, 42. Ko da yake secondary ion mass spectrometry (SIMS)43 yana da watsawar hydrogen da aka ruwaito saboda yanayin zafi mai zafi, yana yiwuwa kawai yawan adadin atom ɗin hydrogen kusa da FD bai isa ya gano pinning na PR ta amfani da SIMS ba. Saboda haka, a cikin wannan binciken, mun dasa protons a cikin 4H-SiC epitaxial wafers kafin aikin ƙirƙira na'urar, gami da rage zafin zafi. Mun yi amfani da diodes na PiN azaman tsarin na'urar gwaji kuma mun ƙirƙira su akan wafers na 4H-SiC da aka dasa na proton. Daga nan mun lura da halayen volt-ampere don nazarin lalacewar aikin na'urar saboda allurar proton. Daga baya, mun lura da fadada 1SSF a cikin hotuna na electroluminescence (EL) bayan amfani da wutar lantarki zuwa diode PiN. A ƙarshe, mun tabbatar da tasirin allurar proton akan dakatarwar fadada 1SSF.
A kan fig. Hoto 1 yana nuna halaye na halin yanzu-ƙarfin wutar lantarki (CVCs) na diodes na PiN a zazzabi a ɗaki a yankuna tare da kuma ba tare da dasa proton ba kafin bugun halin yanzu. PiN diodes tare da allurar proton suna nuna halayen gyara kama da diodes ba tare da allurar proton ba, duk da cewa ana raba halayen IV tsakanin diodes. Don nuna bambanci tsakanin yanayin allura, mun ƙididdige mitar wutar lantarki a ci gaba na yanzu na 2.5 A / cm2 (daidai da 100 mA) azaman ƙididdiga na ƙididdiga kamar yadda aka nuna a cikin Hoto 2. Hakanan ana wakilta madaidaicin da aka kwatanta ta hanyar rarraba ta al'ada. ta layi mai digo. layi. Kamar yadda ake iya gani daga kololuwar masu lanƙwasa, juriya kaɗan yana ƙaruwa a allurai na proton na 1014 da 1016 cm-2, yayin da PiN diode tare da adadin proton na 1012 cm-2 yana nuna kusan halaye iri ɗaya kamar ba tare da dasa proton ba. . Mun kuma yi aikin dasa proton bayan ƙirƙira na diodes na PiN waɗanda ba su nuna daidaitaccen hasken lantarki ba saboda lalacewa ta hanyar dasa proton kamar yadda aka nuna a Hoto S1 kamar yadda aka bayyana a cikin binciken da suka gabata37,38,39. Saboda haka, annealing a 1600 ° C bayan dasawa na Al ions wani tsari ne mai mahimmanci don ƙirƙira na'urori don kunna Al acceptor, wanda zai iya gyara lalacewar da proton implantation ya haifar, wanda ya sanya CVCs iri ɗaya tsakanin proton PiN diodes da ba a dasa ba. . Hakanan ana gabatar da mitar na yanzu a -5 V a cikin Hoto S2, babu wani babban bambanci tsakanin diode tare da kuma ba tare da allurar proton ba.
Halayen Volt-ampere na diodes na PiN tare da kuma ba tare da alluran protons a zazzabi na ɗaki ba. Labarin yana nuna adadin protons.
Mitar wutar lantarki a halin yanzu kai tsaye 2.5 A/cm2 don diodes na PiN tare da alluran allura da marasa allura. Layin dige-dige yayi daidai da rarrabawar al'ada.
A kan fig. 3 yana nuna hoton EL na diode na PiN tare da ƙimar yanzu na 25 A/cm2 bayan ƙarfin lantarki. Kafin yin amfani da nauyin halin yanzu na pulsed, ba a lura da yankunan duhu na diode ba, kamar yadda aka nuna a cikin Hoto 3. C2. Duk da haka, kamar yadda aka nuna a cikin fig. 3a, a cikin diode na PiN ba tare da dasa proton ba, an lura da yankuna da yawa masu ratsi duhu tare da gefuna masu haske bayan amfani da wutar lantarki. Irin waɗannan yankuna duhu masu siffar sanda ana lura da su a cikin hotunan EL don 1SSF da ke fitowa daga BPD a cikin substrate28,29. Madadin haka, an lura da wasu kurakuran da aka tsawaita a cikin PiN diodes tare da dasa protons, kamar yadda aka nuna a cikin siffa 3b-d. Yin amfani da hoton hoto na X-ray, mun tabbatar da kasancewar PRs waɗanda zasu iya motsawa daga BPD zuwa substrate a gefen lambobin sadarwa a cikin diode na PiN ba tare da allurar proton ba (Fig. 4: wannan hoton ba tare da cire babban lantarki ba (hotuna, PR). A karkashin electrodes ba a bayyane). Saboda haka, yankin duhu a cikin hoton EL yayi daidai da wani tsawo na 1SSF BPD a cikin EL hotuna na sauran ɗorawa PiN diodes an nuna su a cikin Figures 1 da 2. Bidiyo S3-S6 tare da ba tare da tsawo ba. wurare masu duhu (hotunan EL masu bambanta lokaci na PiN diodes ba tare da allurar proton ba kuma an dasa su a 1014 cm-2) ana kuma nuna su a Ƙarin Bayani.
Hotunan EL na diodes na PiN a 25 A / cm2 bayan sa'o'i 2 na damuwa na lantarki (a) ba tare da shigar da proton ba kuma tare da allurai na (b) 1012 cm-2, (c) 1014 cm-2 da (d) 1016 cm-2 protons .
Mun ƙididdige girman girman 1SSF ta hanyar ƙididdige wurare masu duhu tare da gefuna masu haske a cikin diodes na PiN guda uku don kowane yanayi, kamar yadda aka nuna a cikin Hoto 5. Ƙaƙƙarfan haɓakar 1SSF yana raguwa tare da ƙara yawan adadin proton, har ma a cikin kashi na 1012 cm-2, Girman faɗaɗa 1SSF yana da ƙasa da ƙasa fiye da a cikin diode na PiN da ba a dasa ba.
Ƙara yawan adadin diodes na SF PiN tare da kuma ba tare da dasa proton ba bayan lodawa tare da halin yanzu (kowace jiha ta haɗa da diodes masu lodi uku).
Rage tsawon rayuwar mai ɗaukar kaya shima yana rinjayar danne haɓakawa, kuma allurar proton yana rage rayuwar mai ɗaukar kaya32,36. Mun lura da rayuwar mai ɗaukar kaya a cikin kauri mai kauri 60 µm tare da allurar protons na 1014 cm-2. Daga farkon rayuwa mai ɗaukar kaya, ko da yake ƙaddamarwa yana rage darajar zuwa ~ 10%, ƙaddamarwa na gaba yana mayar da shi zuwa ~ 50%, kamar yadda aka nuna a cikin Fig. S7. Don haka, tsawon rayuwar mai ɗaukar kaya, wanda aka rage saboda dasa proton, ana dawo da shi ta yanayin zafi mai zafi. Ko da yake raguwar kashi 50% na rayuwar mai ɗaukar kaya shima yana hana yaɗuwar kurakurai, halayen I-V, waɗanda galibi suka dogara da rayuwar mai ɗaukar kaya, suna nuna ƙananan bambance-bambance tsakanin alluran da ba a dasa su ba. Sabili da haka, mun yi imanin cewa PD anchoring yana taka rawa wajen hana haɓaka 1SSF.
Ko da yake SIMS bai gano hydrogen ba bayan annealing a 1600 ° C, kamar yadda aka ruwaito a cikin binciken da suka gabata, mun lura da tasirin proton implantation akan ƙaddamar da fadada 1SSF, kamar yadda aka nuna a Figures 1 da 4. 3, 4. Saboda haka, mun yi imani da cewa PD yana ƙunshe da atom ɗin hydrogen tare da yawa a ƙasa da iyakar gano SIMS (2 × 1016 cm-3) ko lahani da aka jawo ta hanyar dasawa. Ya kamata a lura da cewa ba mu tabbatar da karuwa a cikin juriya na kan-jihar ba saboda tsawo na 1SSF bayan hawan hawan halin yanzu. Wannan na iya zama saboda rashin cikakkun lambobin sadarwa na ohmic da aka yi ta amfani da tsarin mu, wanda za a kawar da shi nan gaba kaɗan.
A ƙarshe, mun ƙirƙiri hanyar kashewa don tsawaita BPD zuwa 1SSF a cikin 4H-SiC PiN diodes ta amfani da dasa proton kafin ƙirƙira na'urar. Lalacewar sifa ta I-V a lokacin dasawa na proton ba shi da mahimmanci, musamman ma a cikin adadin proton na 1012 cm-2, amma tasirin hana haɓakar 1SSF yana da mahimmanci. Kodayake a cikin wannan binciken mun ƙirƙira 10 µm kauri PiN diodes tare da dasa proton zuwa zurfin 10 µm, har yanzu yana yiwuwa a ƙara inganta yanayin dasawa da amfani da su don ƙirƙirar wasu nau'ikan na'urorin 4H-SiC. Ya kamata a yi la'akari da ƙarin farashi don ƙirƙira na'urar yayin dasawa na proton, amma za su yi kama da waɗanda aka yi amfani da su na ion aluminum, wanda shine babban tsarin ƙirƙira don na'urorin wutar lantarki na 4H-SiC. Don haka, dasa proton kafin sarrafa na'urar wata hanya ce mai yuwuwar ƙirƙira na'urorin wutar lantarki na 4H-SiC ba tare da lalacewa ba.
An yi amfani da wafer 4-inch n-type 4H-SiC tare da kauri na epitaxial Layer na 10 μm da mai ba da gudummawar doping na 1 × 1016 cm-3 azaman samfuri. Kafin sarrafa na'urar, an dasa H+ ions a cikin farantin tare da ƙarfin haɓakawa na 0.95 MeV a dakin da zafin jiki zuwa zurfin kusan μm 10 a kusurwar al'ada zuwa saman farantin. A lokacin dasa proton, an yi amfani da abin rufe fuska akan faranti, kuma farantin yana da sassan ba tare da kuma tare da adadin proton na 1012, 1014, ko 1016 cm-2 ba. Sa'an nan, Al ions tare da proton allurai na 1020 da 1017 cm-3 aka dasa a kan dukan wafer zuwa zurfin 0-0.2 µm da 0.2-0.5 µm daga saman, sa'an nan annealing a 1600 ° C don samar da wani carbon cap zuwa. form ap Layer. - nau'in. Daga baya, an ajiye lambar gefen Ni na baya a gefen ƙasa, yayin da lamba ta gaba mai siffar Ti/Al mai siffar 2.0 mm × 2.0 mm wadda aka kafa ta hanyar hoto kuma an ajiye tsarin kwasfa a gefen epitaxial Layer. A ƙarshe, ana aiwatar da annealing lamba a zazzabi na 700 ° C. Bayan yanke wafer a cikin kwakwalwan kwamfuta, mun yi halayyar danniya da aikace-aikace.
An lura da halayen I-V na diodes ɗin PiN da aka ƙirƙira ta amfani da na'urar nazarin siga na HP4155B. A matsayin danniya na lantarki, an gabatar da pulsed na yanzu na 212.5 A/cm2 na miliyon daƙiƙa 10 na tsawon sa'o'i 2 a mitar 10 pulses/sec. Lokacin da muka zaɓi ƙananan ƙarancin halin yanzu ko mita, ba mu lura da faɗaɗa 1SSF ba har ma a cikin diode na PiN ba tare da allurar proton ba. A lokacin da ake amfani da wutar lantarki, zazzabi na diode na PiN yana kusa da 70 ° C ba tare da dumama da gangan ba, kamar yadda aka nuna a cikin hoto S8. An samo hotunan lantarki kafin da bayan damuwa na lantarki a halin yanzu na 25 A/cm2. Synchrotron tunani kiwo abin da ya faru na X-ray topography ta amfani da monochromatic X-ray bim (λ = 0.15 nm) a Aichi Synchrotron Radiation Center, ag vector a BL8S2 ne -1-128 ko 11-28 (duba ref. 44 don cikakkun bayanai) . ).
Ana fitar da mitar wutar lantarki a mafi girman halin yanzu na 2.5 A/cm2 tare da tazara na 0.5 V a cikin fig. 2 bisa ga CVC na kowace jiha na PiN diode. Daga ma'anar ƙimar damuwa Vave da daidaitaccen karkata σ na damuwa, muna ƙirƙira madaidaicin rarraba na yau da kullun a cikin nau'in layin dige-dige a cikin Hoto 2 ta amfani da ma'auni mai zuwa:
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Lokacin aikawa: Nuwamba-06-2022
