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4H-SiC an tallata shi azaman abu don na'urorin semiconductor mai ƙarfi. Koyaya, amincin dogon lokaci na na'urorin 4H-SiC shine cikas ga faɗuwar aikace-aikacen su, kuma mafi mahimmancin matsalar amincin na'urorin 4H-SiC shine lalatawar bipolar. Wannan lalata yana faruwa ne ta hanyar kuskuren Shockley stacking (1SSF) yaduwa na basal jirgin sama a cikin lu'ulu'u na 4H-SiC. Anan, muna ba da shawarar wata hanya don murkushe haɓaka 1SSF ta hanyar dasa protons akan wafers na 4H-SiC na epitaxial. PiN diodes da aka ƙirƙira akan wafers tare da dasa proton sun nuna halaye iri ɗaya na ƙarfin lantarki kamar diodes ba tare da dasa proton ba. Sabanin haka, an danne haɓakar 1SSF yadda ya kamata a cikin diode da aka dasa na proton. Don haka, dasa protons a cikin 4H-SiC epitaxial wafers hanya ce mai inganci don murkushe lalatawar na'urorin wutar lantarki na 4H-SiC yayin kiyaye aikin na'urar. Wannan sakamakon yana ba da gudummawa ga haɓaka na'urorin 4H-SiC abin dogaro sosai.
Silicon carbide (SiC) an san shi da yawa azaman kayan aikin semiconductor don babban iko, na'urori masu saurin mitar semiconductor waɗanda zasu iya aiki a cikin matsanancin yanayi1. Akwai nau'ikan SiC da yawa, daga cikinsu 4H-SiC yana da kyawawan kayan aikin semiconductor na zahiri kamar babban motsi na lantarki da fashewar filin lantarki mai ƙarfi2. 4H-SiC wafers tare da diamita na inci 6 a halin yanzu ana sayar da su kuma ana amfani da su don yawan samar da na'urori masu sarrafa iko3. An ƙirƙira tsarin jigilar motocin lantarki da jiragen ƙasa ta amfani da na'urori masu sarrafa wutar lantarki 4H-SiC4.5. Duk da haka, na'urorin 4H-SiC har yanzu suna fama da matsalolin dogara na dogon lokaci irin su rushewar dielectric ko gajeren lokaci, 6,7 wanda daya daga cikin muhimman al'amurra masu mahimmanci shine lalatawar bipolar2,8,9,10,11. An gano wannan gurɓacewar yanayi sama da shekaru 20 da suka gabata kuma an daɗe ana samun matsala a ƙirƙira na'urar SiC.
Lalacewar Bipolar yana haifar da lahani guda ɗaya na Shockley stack (1SSF) a cikin lu'ulu'u na 4H-SiC tare da ɓarnawar jirgin sama na basal (BPDs) ta hanyar haɓaka haɓakar haɓakar ƙazantawa (REDG) 12,13,14,15,16,17,18,19. Sabili da haka, idan an dakatar da fadada BPD zuwa 1SSF, ana iya ƙirƙira na'urorin wutar lantarki na 4H-SiC ba tare da lalata bipolar ba. An ba da rahoton hanyoyi da yawa don murkushe yaduwar BPD, irin su BPD zuwa sauye-sauyen Edge Edge (TED) 20,21,22,23,24. A cikin sabuwar SiC epitaxial wafers, BPD yafi kasancewa a cikin substrate kuma ba a cikin epitaxial Layer ba saboda canza BPD zuwa TED a lokacin farkon matakin girma na epitaxial. Sabili da haka, matsalar da ta rage na lalata bipolar ita ce rarraba BPD a cikin ƙananan 25,26,27. An ba da shawarar shigar da "ƙarfafa ƙarfafawa mai haɗawa" tsakanin ɗigon ɗigon ruwa da ɗigon ruwa a matsayin ingantacciyar hanya don murkushe fadada BPD a cikin substrate28, 29, 30, 31. Wannan Layer yana ƙara yuwuwar sake haɗawa biyu na electron-rami a cikin epitaxial Layer da SiC substrate. Rage adadin nau'i-nau'i-nau'i-nau'i-nau'i na lantarki yana rage ƙarfin tuƙi na REDG zuwa BPD a cikin ma'auni, don haka haɗin gwiwar ƙarfafawa zai iya kashe lalatawar bipolar. Ya kamata a lura cewa shigar da Layer yana haifar da ƙarin farashi a cikin samar da wafers, kuma ba tare da shigar da Layer ba yana da wuya a rage adadin nau'i-nau'i na electron-rami ta hanyar sarrafa kawai ikon mai ɗaukar kaya a rayuwa. Sabili da haka, har yanzu akwai buƙatu mai ƙarfi don haɓaka wasu hanyoyin murkushewa don cimma ingantacciyar daidaituwa tsakanin farashin kera na'urar da yawan amfanin ƙasa.
Saboda tsawo na BPD zuwa 1SSF yana buƙatar motsi na ɓarna na ɓangarori (PDs), haɗa PD wata hanya ce mai ban sha'awa don hana lalata bipolar. Ko da yake an ba da rahoton pinning PD ta ƙazantattun ƙarfe, FPDs a cikin 4H-SiC substrates suna cikin nisa fiye da 5 μm daga saman Layer epitaxial. Bugu da kari, tun da yawan yaduwa na kowane karfe a cikin SiC yana da kankanta sosai, yana da wahala ga dattin karfe ya yadu a cikin substrate34. Saboda da in mun gwada da manyan atomic taro na karafa, ion implantation na karafa shi ma yana da wahala. Sabanin haka, a cikin yanayin hydrogen, mafi ƙarancin kashi, ions (protons) za a iya dasa su cikin 4H-SiC zuwa zurfin fiye da 10 µm ta amfani da na'ura mai sauri na MeV. Saboda haka, idan dasa proton ya shafi PD pinning, to ana iya amfani dashi don kashe yaduwar BPD a cikin substrate. Koyaya, dasa proton na iya lalata 4H-SiC kuma yana haifar da rage aikin na'urar37,38,39,40.
Don shawo kan lalacewar na'urar saboda dasa proton, ana amfani da zafi mai zafi don gyara lalacewa, kama da hanyar da aka saba amfani da ita bayan shigar da ion mai karɓa a cikin sarrafa na'urar1, 40, 41, 42. Ko da yake secondary ion mass spectrometry (SIMS)43 yana da watsawar hydrogen da aka ruwaito saboda yanayin zafi mai zafi, yana yiwuwa kawai yawan adadin atom ɗin hydrogen kusa da FD bai isa ya gano pinning na PR ta amfani da SIMS ba. Saboda haka, a cikin wannan binciken, mun dasa protons a cikin 4H-SiC epitaxial wafers kafin aikin ƙirƙira na'urar, gami da rage zafin zafi. Mun yi amfani da diodes na PiN azaman tsarin na'urar gwaji kuma mun ƙirƙira su akan wafers na 4H-SiC da aka dasa na proton. Daga nan mun lura da halayen volt-ampere don nazarin lalacewar aikin na'urar saboda allurar proton. Daga baya, mun lura da fadada 1SSF a cikin hotuna na electroluminescence (EL) bayan amfani da wutar lantarki zuwa diode PiN. A ƙarshe, mun tabbatar da tasirin allurar proton akan dakatarwar fadada 1SSF.
A kan fig. Hoto 1 yana nuna halaye na halin yanzu-ƙarfin wutar lantarki (CVCs) na diodes na PiN a zazzabi a ɗaki a yankuna tare da kuma ba tare da dasa proton ba kafin bugun halin yanzu. PiN diodes tare da allurar proton suna nuna halayen gyara kama da diodes ba tare da allurar proton ba, duk da cewa ana raba halayen IV tsakanin diodes. Don nuna bambanci tsakanin yanayin allura, mun ƙididdige mitar wutar lantarki a ci gaba na yanzu na 2.5 A / cm2 (daidai da 100 mA) azaman ƙididdiga na ƙididdiga kamar yadda aka nuna a cikin Hoto 2. Hakanan ana wakilta madaidaicin da aka kwatanta ta hanyar rarraba ta al'ada. ta layi mai digo. layi. Kamar yadda ake iya gani daga kololuwar masu lanƙwasa, juriya kaɗan yana ƙaruwa a allurai na proton na 1014 da 1016 cm-2, yayin da PiN diode tare da adadin proton na 1012 cm-2 yana nuna kusan halaye iri ɗaya kamar ba tare da dasa proton ba. . Mun kuma yi aikin dasa proton bayan ƙirƙira na diodes na PiN waɗanda ba su nuna daidaitaccen hasken lantarki ba saboda lalacewa ta hanyar dasa proton kamar yadda aka nuna a Hoto S1 kamar yadda aka bayyana a cikin binciken da suka gabata37,38,39. Saboda haka, annealing a 1600 ° C bayan dasawa na Al ions wani tsari ne mai mahimmanci don ƙirƙira na'urori don kunna Al acceptor, wanda zai iya gyara lalacewar da proton implantation ya haifar, wanda ya sanya CVCs iri ɗaya tsakanin proton PiN diodes da ba a dasa ba. . Hakanan ana gabatar da mitar na yanzu a -5 V a cikin Hoto S2, babu wani babban bambanci tsakanin diode tare da kuma ba tare da allurar proton ba.
Halayen Volt-ampere na diodes na PiN tare da kuma ba tare da alluran protons a zazzabi na ɗaki ba. Labarin yana nuna adadin protons.
Mitar wutar lantarki a halin yanzu kai tsaye 2.5 A/cm2 don diodes na PiN tare da alluran allura da marasa allura. Layin dige-dige yayi daidai da rarrabawar al'ada.
A kan fig. 3 yana nuna hoton EL na diode na PiN tare da ƙimar yanzu na 25 A/cm2 bayan ƙarfin lantarki. Kafin yin amfani da nauyin halin yanzu na pulsed, ba a lura da yankunan duhu na diode ba, kamar yadda aka nuna a cikin Hoto 3. C2. Duk da haka, kamar yadda aka nuna a cikin fig. 3a, a cikin diode na PiN ba tare da dasa proton ba, an lura da yankuna da yawa masu ratsi duhu tare da gefuna masu haske bayan amfani da wutar lantarki. Irin waɗannan yankuna duhu masu siffar sanda ana lura da su a cikin hotunan EL don 1SSF da ke fitowa daga BPD a cikin substrate28,29. Madadin haka, an lura da wasu kurakuran da aka tsawaita a cikin PiN diodes tare da dasa protons, kamar yadda aka nuna a cikin siffa 3b-d. Yin amfani da hoton hoto na X-ray, mun tabbatar da kasancewar PRs waɗanda zasu iya motsawa daga BPD zuwa substrate a gefen lambobin sadarwa a cikin diode na PiN ba tare da allurar proton ba (Fig. 4: wannan hoton ba tare da cire babban lantarki ba (hotuna, PR). A karkashin electrodes ba a bayyane). Saboda haka, yankin duhu a cikin hoton EL yayi daidai da wani tsawo na 1SSF BPD a cikin EL hotuna na sauran ɗorawa PiN diodes an nuna su a cikin Figures 1 da 2. Bidiyo S3-S6 tare da ba tare da tsawo ba. wurare masu duhu (hotunan EL masu bambanta lokaci na PiN diodes ba tare da allurar proton ba kuma an dasa su a 1014 cm-2) ana kuma nuna su a Ƙarin Bayani.
Hotunan EL na diodes na PiN a 25 A / cm2 bayan sa'o'i 2 na damuwa na lantarki (a) ba tare da shigar da proton ba kuma tare da allurai na (b) 1012 cm-2, (c) 1014 cm-2 da (d) 1016 cm-2 protons .
Mun ƙididdige girman girman 1SSF ta hanyar ƙididdige wurare masu duhu tare da gefuna masu haske a cikin diodes na PiN guda uku don kowane yanayi, kamar yadda aka nuna a cikin Hoto 5. Ƙaƙƙarfan haɓakar 1SSF yana raguwa tare da ƙara yawan adadin proton, har ma a cikin kashi na 1012 cm-2, Girman faɗaɗa 1SSF yana da ƙasa da ƙasa fiye da a cikin diode na PiN da ba a dasa ba.
Ƙara yawan adadin diodes na SF PiN tare da kuma ba tare da dasa proton ba bayan lodawa tare da halin yanzu (kowace jiha ta haɗa da diodes masu lodi uku).
Rage tsawon rayuwar mai ɗaukar kaya shima yana rinjayar danne haɓakawa, kuma allurar proton yana rage rayuwar mai ɗaukar kaya32,36. Mun lura da rayuwar mai ɗaukar kaya a cikin kauri mai kauri 60 µm tare da allurar protons na 1014 cm-2. Daga farkon rayuwa mai ɗaukar kaya, ko da yake ƙaddamarwa yana rage darajar zuwa ~ 10%, ƙaddamarwa na gaba yana mayar da shi zuwa ~ 50%, kamar yadda aka nuna a cikin Fig. S7. Don haka, tsawon rayuwar mai ɗaukar kaya, wanda aka rage saboda dasa proton, ana dawo da shi ta hanyar zafi mai zafi. Ko da yake raguwar kashi 50% na rayuwar mai ɗaukar kaya shima yana hana yaɗuwar kurakurai, halayen I-V, waɗanda galibi suka dogara da rayuwar mai ɗaukar kaya, suna nuna ƙananan bambance-bambance tsakanin alluran da ba a dasa su ba. Sabili da haka, mun yi imanin cewa PD anchoring yana taka rawa wajen hana haɓaka 1SSF.
Ko da yake SIMS bai gano hydrogen ba bayan annealing a 1600 ° C, kamar yadda aka ruwaito a cikin binciken da suka gabata, mun lura da tasirin proton implantation akan ƙaddamar da fadada 1SSF, kamar yadda aka nuna a Figures 1 da 4. 3, 4. Saboda haka, mun yi imani da cewa PD yana ƙunshe da atom ɗin hydrogen tare da yawa a ƙasa da iyakar gano SIMS (2 × 1016 cm-3) ko lahani da aka jawo ta hanyar dasawa. Ya kamata a lura da cewa ba mu tabbatar da karuwa a cikin juriya na kan-jihar ba saboda tsawo na 1SSF bayan hawan hawan halin yanzu. Wannan na iya zama saboda rashin cikakkun lambobin sadarwa na ohmic da aka yi ta amfani da tsarin mu, wanda za a kawar da shi nan gaba kaɗan.
A ƙarshe, mun ƙirƙiri hanyar kashewa don tsawaita BPD zuwa 1SSF a cikin 4H-SiC PiN diodes ta amfani da dasa proton kafin ƙirƙira na'urar. Lalacewar sifa ta I-V a lokacin dasawa na proton ba shi da mahimmanci, musamman ma a cikin adadin proton na 1012 cm-2, amma tasirin hana haɓakar 1SSF yana da mahimmanci. Kodayake a cikin wannan binciken mun ƙirƙira 10 µm kauri PiN diodes tare da dasa proton zuwa zurfin 10 µm, har yanzu yana yiwuwa a ƙara inganta yanayin dasawa da amfani da su don ƙirƙirar wasu nau'ikan na'urorin 4H-SiC. Ya kamata a yi la'akari da ƙarin farashi don ƙirƙira na'urar yayin dasawa na proton, amma za su yi kama da waɗanda aka yi amfani da su na ion aluminum, wanda shine babban tsarin ƙirƙira don na'urorin wutar lantarki na 4H-SiC. Don haka, dasa proton kafin sarrafa na'urar wata hanya ce mai yuwuwar ƙirƙira na'urorin wutar lantarki na 4H-SiC ba tare da lalacewa ba.
An yi amfani da wafer 4-inch n-type 4H-SiC tare da kauri na epitaxial Layer na 10 μm da mai ba da gudummawar doping na 1 × 1016 cm-3 azaman samfuri. Kafin sarrafa na'urar, an dasa H+ ions a cikin farantin tare da ƙarfin haɓakawa na 0.95 MeV a dakin da zafin jiki zuwa zurfin kusan μm 10 a kusurwar al'ada zuwa saman farantin. A lokacin dasa proton, an yi amfani da abin rufe fuska akan faranti, kuma farantin yana da sassan ba tare da kuma tare da adadin proton na 1012, 1014, ko 1016 cm-2 ba. Sa'an nan, Al ions tare da proton allurai na 1020 da 1017 cm-3 aka dasa a kan dukan wafer zuwa zurfin 0-0.2 µm da 0.2-0.5 µm daga saman, sa'an nan annealing a 1600 ° C don samar da wani carbon cap zuwa. form ap Layer. - nau'in. Daga baya, an ajiye lambar gefen Ni na baya a gefen ƙasa, yayin da lamba ta gaba mai siffar Ti/Al mai siffar 2.0 mm × 2.0 mm wadda aka kafa ta hanyar hoto kuma an ajiye tsarin kwasfa a gefen epitaxial Layer. A ƙarshe, ana aiwatar da annealing lamba a zazzabi na 700 ° C. Bayan yanke wafer a cikin kwakwalwan kwamfuta, mun yi halayyar danniya da aikace-aikace.
An lura da halayen I-V na diodes ɗin PiN da aka ƙirƙira ta amfani da na'urar nazarin siga na HP4155B. A matsayin danniya na lantarki, an gabatar da pulsed na yanzu na 212.5 A/cm2 na miliyon daƙiƙa 10 na tsawon sa'o'i 2 a mitar 10 pulses/sec. Lokacin da muka zaɓi ƙananan ƙarancin halin yanzu ko mita, ba mu lura da faɗaɗa 1SSF ba har ma a cikin diode na PiN ba tare da allurar proton ba. A lokacin da ake amfani da wutar lantarki, zazzabi na diode na PiN yana kusa da 70 ° C ba tare da dumama da gangan ba, kamar yadda aka nuna a cikin hoto S8. An samo hotunan lantarki kafin da bayan damuwa na lantarki a halin yanzu na 25 A/cm2. Synchrotron tunani kiwo abin da ya faru na X-ray topography ta amfani da monochromatic X-ray bim (λ = 0.15 nm) a Aichi Synchrotron Radiation Center, ag vector a BL8S2 ne -1-128 ko 11-28 (duba ref. 44 don cikakkun bayanai) . ).
Ana fitar da mitar wutar lantarki a mafi girman halin yanzu na 2.5 A/cm2 tare da tazara na 0.5 V a cikin fig. 2 bisa ga CVC na kowace jiha na PiN diode. Daga ma'anar ƙimar damuwa Vave da daidaitaccen karkata σ na damuwa, muna ƙirƙira madaidaicin rarraba na yau da kullun a cikin nau'in layin dige-dige a cikin Hoto 2 ta amfani da ma'auni mai zuwa:
Werner, MR & Fahrner, WR Bita akan kayan, microsensors, tsarin da na'urori don babban zafin jiki da aikace-aikacen mahalli. Werner, MR & Fahrner, WR Bita akan kayan, microsensors, tsarin da na'urori don babban zafin jiki da aikace-aikacen mahalli.Werner, MR da Farner, WR Bayani na kayan aiki, microsensors, tsarin da na'urori don aikace-aikace a cikin babban zafin jiki da yanayi mai tsanani. Werner, MR & Fahrner, WR. Werner, MR & Fahrner, WR Bita na kayan aiki, microsensors, tsarin da na'urori don babban zafin jiki da aikace-aikacen muhalli mara kyau.Werner, MR da Farner, WR Bayani na kayan aiki, microsensors, tsarin da na'urori don aikace-aikace a yanayin zafi mai zafi da yanayi mai tsanani.IEEE Trans. Kayan lantarki na masana'antu. 48, 249-257 (2001).
Kimoto, T. & Cooper, JA Tushen Fasahar Fasahar Silicon Carbide Tushen Fasahar Silicon Carbide: Girma, Halaye, Na'urori da Aikace-aikace Vol. Kimoto, T. & Cooper, JA Tushen Fasahar Fasahar Silicon Carbide Tushen Fasahar Silicon Carbide: Girma, Halaye, Na'urori da Aikace-aikace Vol.Kimoto, T. da Cooper, JA Basics of Silicon Carbide Technology Basics of Silicon Carbide Technology: Girma, Halaye, Na'urori da Aikace-aikace Vol. Kimoto, T. & Cooper, JA 碳化硅技术基础碳化硅技术基础：增长、表征、设备和应用卷。 Kimoto, T. & Cooper, JA Carbon 化silicon fasahar tushe Carbon 化Silicon fasahar tushe: girma, bayanin, kayan aiki da ƙarar aikace-aikace.Kimoto, T. da Cooper, J. Tushen Fasahar Silicon Carbide Tushen Fasahar Silicon Carbide: Girma, Halaye, Kayan aiki da Aikace-aikace Vol.252 (Wiley Singapore Pte Ltd, 2014).
Veliadis, V. Kasuwancin Sikeli Babba na SiC: Matsayin Ƙimar da Abubuwan da za a shawo kan Su. almajiri. ilimin kimiyya. Dandalin 1062, 125–130 (2022).
Broughton, J., Smet, V., Tummala, RR & Joshi, YK Bita na fasahar marufi na thermal don kayan lantarki na kera motoci don dalilai na jan hankali. Broughton, J., Smet, V., Tummala, RR & Joshi, YK Bita na fasahar marufi na thermal don kayan lantarki na kera motoci don dalilai na jan hankali.Broughton, J., Smet, V., Tummala, RR da Joshi, YK Bayanin fasahar marufi na thermal don kayan lantarki na kera motoci don dalilai na jan hankali. Broughton, J., Smet, V., Tummala, RR & Joshi, YK 用于牵引目的的汽车电力电子热封装技术的回顾。 Broughton, J., Smet, V., Tummala, RR & Joshi, YKBroughton, J., Smet, V., Tummala, RR da Joshi, YK Bayanin fasahar marufi na thermal don kayan lantarki na kera motoci don dalilai na jan hankali.J. Electron. Kunshin hayyacinta. ASME 140, 1-11 (2018).
Sato, K., Kato, H. & Fukushima, T. Ci gaban SiC ya yi amfani da tsarin juzu'i don manyan jiragen kasa masu sauri na Shinkansen na gaba. Sato, K., Kato, H. & Fukushima, T. Ci gaban SiC ya yi amfani da tsarin juzu'i don manyan jiragen kasa masu sauri na Shinkansen na gaba.Sato K., Kato H. da Fukushima T. Haɓaka tsarin da aka yi amfani da shi na SiC don jiragen kasa na Shinkansen masu sauri na gaba.Sato K., Kato H. da Fukushima T. Traction System Development for SiC Application for Next Generation High-Speed Shinkansen Trains. Shafi IEEJ J. Ind. 9, 453-459 (2020).
Senzaki, J., Hayashi, S., Yonezawa, Y. & Okumura, H. Kalubale don gane ingantattun na'urorin wutar lantarki na SiC: Daga halin yanzu da batutuwan wafers na SiC. Senzaki, J., Hayashi, S., Yonezawa, Y. & Okumura, H. Kalubale don gane ingantattun na'urorin wutar lantarki na SiC: Daga halin yanzu da batutuwan wafers na SiC.Senzaki, J., Hayashi, S., Yonezawa, Y. da Okumura, H. Matsaloli a cikin aiwatar da na'urorin wutar lantarki na SiC masu dogara sosai: farawa daga halin yanzu da matsalar wafer SiC. Senzaki, J., Hayashi, S., Yonezawa, Y. & Okumura, H. Senzaki, J., Hayashi, S., Yonezawa, Y. & Okumura, H. Kalubale na samun babban aminci a cikin na'urorin wutar lantarki na SiC: daga SiC 晶圆的电视和问题设计。Senzaki J, Hayashi S, Yonezawa Y. da Okumura H. Kalubale a cikin haɓaka na'urorin wutar lantarki masu ƙarfi bisa ga silicon carbide: nazarin matsayi da matsalolin da ke hade da siliki carbide wafers.A 2018 IEEE Taro na Kasa da Kasa akan Dogarorin Physics (IRPS). (Senzaki, J. et al. eds.) 3B.3-1-3B.3-6 (IEEE, 2018).
Kim, D. & Sung, W. Inganta ƙaƙƙarfan ƙaƙƙarfan ƙaƙƙarfan ƙaƙƙarfan ƙaƙƙarfan motsi don 1.2kV 4H-SiC MOSFET ta amfani da zurfin P-rijiyar da aka aiwatar ta hanyar shigar da tashoshi. Kim, D. & Sung, W. Inganta ƙaƙƙarfan ƙaƙƙarfan ƙaƙƙarfan ƙaƙƙarfan ƙaƙƙarfan motsi don 1.2kV 4H-SiC MOSFET ta amfani da zurfin P-rijiyar da aka aiwatar ta hanyar shigar da tashoshi.Kim, D. da Sung, V. Ingantattun rigakafi na gajeren lokaci don 1.2 kV 4H-SiC MOSFET ta amfani da zurfin P-rijiyar da aka aiwatar ta hanyar dasa tashoshi. Kim, D. & Sung, W. 使用通过沟道注入实现的深P 阱提高了1.2kV 4H-SiC MOSFET 的短路耐用性。 Kim, D. & Sung, W. P 阱提高了1.2kV 4H-SiC MOSFETKim, D. da Sung, V. Ingantattun haƙuri na gajeren lokaci na 1.2 kV 4H-SiC MOSFETs ta amfani da zurfin P-rijiyoyi ta hanyar dasa tashoshi.IEEE Electronic Devices Lett. 42, 1822-1825 (2021).
Skowronski M. et al. Sake haɓaka motsi na lahani a cikin 4H-SiC pn diodes masu son zuciya. J. Aikace-aikace. ilimin lissafi. 92, 4699-4704 (2002).
Ha, S., Mieszkowski, P., Skowronski, M. & Rowland, LB Juyin juyayi a cikin 4H silicon carbide epitaxy. Ha, S., Mieszkowski, P., Skowronski, M. & Rowland, LB Juyin juyayi a cikin 4H silicon carbide epitaxy.Ha S., Meszkowski P., Skowronski M. da Rowland LB Canjin Canji a lokacin 4H silicon carbide epitaxy. Ha, S., Mieszkowski, P., Skowronski, M. & Rowland, LB 4H 碳化硅外延中的位错转换。 Ha, S., Mieszkowski, P., Skowronski, M. & Rowland, LB 4H Ha, S., Meszkowski, P., Skowronski, M. & Rowland, LBCanjin canjin yanayi 4H a cikin epitaxy silicon carbide.J. Crystal. Girma 244, 257-266 (2002).
Skowronski, M. & Ha, S. Lalacewar na'urorin siliki-carbide na tushen bipolar hexagonal hexagonal. Skowronski, M. & Ha, S. Lalacewar na'urorin siliki-carbide na tushen bipolar hexagonal hexagonal.Skowronski M. da Ha S. Lalacewar na'urorin bipolar hexagonal hexagonal bisa silicon carbide. Skowronski, M. & Ha, S. 六方碳化硅基双极器件的降解。 Skowronski M. & Ha S.Skowronski M. da Ha S. Lalacewar na'urorin bipolar hexagonal hexagonal bisa silicon carbide.J. Aikace-aikace. ilimin lissafi 99, 011101 (2006).
Agarwal, A., Fatima, H., Haney, S. & Ryu, S.-H. Agarwal, A., Fatima, H., Haney, S. & Ryu, S.-H.Agarwal A., Fatima H., Heini S. da Ryu S.-H. Agarwal, A., Fatima, H., Haney, S. & Ryu, S.-H. Agarwal, A., Fatima, H., Haney, S. & Ryu, S.-H.Agarwal A., Fatima H., Heini S. da Ryu S.-H.Wani sabon tsarin lalata don babban ƙarfin wutar lantarki na SiC MOSFETs. IEEE Electronic Devices Lett. 28, 587-589 (2007).
Caldwell, JD, Stahlbush, RE, Ancona, MG, Glembocki, OJ & Hobart, KD Akan ƙarfin tuƙi don sake haɗawa-induced stacking kuskure motsi a cikin 4H-SiC. Caldwell, JD, Stahlbush, RE, Ancona, MG, Glembocki, OJ & Hobart, KD Akan ƙarfin tuƙi don sake haɗawa-induced stacking kuskure motsi a cikin 4H-SiC.Caldwell, JD, Stalbush, RE, Ancona, MG, Glemboki, OJ, da Hobart, KD A kan ƙarfin motsin kuskuren sake haɗawa a cikin 4H-SiC. Caldwell, JD, Stahlbush, RE, Ancona, MG, Glembocki, OJ & Hobart, KD 关于4H-SiC 中复合引起的层错运动的驱动力。 Caldwell, JD, Stahlbush, RE, Ancona, MG, Glembocki, OJ & Hobart, KDCaldwell, JD, Stalbush, RE, Ancona, MG, Glemboki, OJ, da Hobart, KD, A kan ƙarfin motsin kuskuren sake haɗawa a cikin 4H-SiC.J. Aikace-aikace. ilimin lissafi. 108, 044503 (2010).
Iijima, A. & Kimoto, T. Samfuran makamashin lantarki don ƙirƙirar kuskuren Shockley guda ɗaya a cikin lu'ulu'u na 4H-SiC. Iijima, A. & Kimoto, T. Samfuran makamashin lantarki don ƙirƙirar kuskuren Shockley guda ɗaya a cikin lu'ulu'u na 4H-SiC.Iijima, A. da Kimoto, T. Electron-makamashi model na samuwar guda lahani na Shockley shiryawa a 4H-SiC lu'ulu'u. Iijima, A. & Kimoto, T. 4H-SiC 晶体中单Shockley 堆垛层错形成的电子能量模型。 Iijima, A. & Kimoto, T. Samfuran makamashin lantarki na samuwar kuskuren Shockley guda ɗaya a cikin kristal 4H-SiC.Iijima, A. da Kimoto, T. Electron-makamashi model na samuwar guda lahani Shockley shiryawa a 4H-SiC lu'ulu'u.J. Aikace-aikace. ilimin lissafi 126, 105703 (2019).
Iijima, A. & Kimoto, T. Ƙididdiga na mawuyacin yanayi don faɗaɗa/karɓar kurakuran Shockley guda ɗaya a cikin 4H-SiC PiN diodes. Iijima, A. & Kimoto, T. Ƙididdiga na mawuyacin yanayi don faɗaɗa/karɓar kurakuran Shockley guda ɗaya a cikin 4H-SiC PiN diodes.Iijima, A. da Kimoto, T. Ƙididdigar mahimmancin jihar don faɗaɗawa / matsawa na lahani na Shockley guda ɗaya a cikin 4H-SiC PiN-diodes. Iijima, A. & Kimoto, T. 估计4H-SiC PiN 二极管中单个Shockley 堆垛层错膨胀/收缩的临界条件。 Iijima, A. & Kimoto, T. Ƙididdiga na faɗaɗawar shimfidar Layer na Shockley guda ɗaya a cikin 4H-SiC PiN diodes.Iijima, A. da Kimoto, T. Ƙididdigar mahimmancin yanayi don faɗaɗawa / matsawa na ɗaukar lahani guda ɗaya Shockley a cikin 4H-SiC PiN-diodes.aikace-aikacen physics Wright. 116, 092105 (2020).
Mannen, Y., Shimada, K., Asada, K. & Ohtani, N. Quantum kyakkyawan samfurin aiki don ƙirƙirar kuskuren Shockley stacking guda ɗaya a cikin kristal 4H-SiC ƙarƙashin yanayin rashin daidaituwa. Mannen, Y., Shimada, K., Asada, K. & Ohtani, N. Quantum kyakkyawan samfurin aiki don ƙirƙirar kuskuren Shockley stacking guda ɗaya a cikin kristal 4H-SiC ƙarƙashin yanayin rashin daidaituwa.Mannen Y., Shimada K., Asada K., da Otani N. A ƙididdiga rijiyar ƙirar ƙira ɗaya don ƙirƙirar kuskuren Shockley stacking guda ɗaya a cikin kristal 4H-SiC ƙarƙashin yanayin rashin daidaituwa.Mannen Y., Shimada K., Asada K. da Otani N. Quantum kyakkyawan tsarin hulɗa don ƙirƙirar kuskuren Shockley stacking guda ɗaya a cikin lu'ulu'u na 4H-SiC ƙarƙashin yanayin rashin daidaituwa. J. Aikace-aikace. ilimin lissafi. 125, 085705 (2019).
Galeckas, A., Linnros, J. & Pirouz, P. Abubuwan da aka haifar da sake haɗawa: Shaida don tsarin gabaɗaya a SiC hexagonal. Galeckas, A., Linnros, J. & Pirouz, P. Abubuwan da aka haifar da sake haɗawa: Shaida don tsarin gabaɗaya a SiC hexagonal.Galeckas, A., Linnros, J. da Pirouz, P. Abubuwan da aka Haɓaka-Sake Haɗuwa: Shaida don Kayan aikin gama gari a cikin Hexagonal SiC. Galeckas, A., Linnros, J. & Pirouz, P. 复合诱导的堆垛层错：六方SiC 中一般机制的证据。 Galeckas, A., Linnros, J. & Pirouz, P. Shaida ga tsarin gaba ɗaya na haɗaɗɗen induction stacking Layer: 六方SiC.Galeckas, A., Linnros, J. da Pirouz, P. Abubuwan da aka Haɓaka-Sake Haɗuwa: Shaida don Kayan aikin gama gari a cikin Hexagonal SiC.physics Fasto Wright. 96, 025502 (2006).
Ishikawa, Y., Sudo, M., Yao, YZ haske mai haske.Ishikawa , Y. , M. Sudo , Y.-Z hasken wuta.Ishikawa, Y., Sudo M., Y.-Z Psychology.Box, Ю., M. Судо, Y.-Z Chem., J. Chem., 123, 225101 (2018).
Kato, M., Katahira, S., Ichikawa, Y., Harada, S. & Kimoto, T. Lura da sake hadewar mai ɗaukar kaya a cikin kurakuran tari na Shockley guda ɗaya kuma a ɓarna a cikin 4H-SiC. Kato, M., Katahira, S., Ichikawa, Y., Harada, S. & Kimoto, T. Lura da sake hadewar mai ɗaukar kaya a cikin kurakuran tari na Shockley guda ɗaya kuma a ɓarna a cikin 4H-SiC.Kato M., Katahira S., Itikawa Y., Harada S. da Kimoto T. Lura da Sake Haɗuwa da Mai ɗaukar kaya a cikin Lalacewar Packing Shockley Single da Rarraba Sashe a cikin 4H-SiC. Kato, M., Katahira, S., Ichikawa, Y., Harada, S. & Kimoto, T. 单Shockley 堆垛层错和4H-SiC 部分位错中载流子复合的跟 Kato, M., Katahira, S., Ichikawa, Y., Harada, S. & Kimoto, T. 单Shockley stacking stacking和4H-SiC partial 位错中载流子去生的可以。Kato M., Katahira S., Itikawa Y., Harada S. da Kimoto T. Lura da Sake Haɗuwa da Mai ɗaukar kaya a cikin Lalacewar Packing Shockley Single da Rarraba Sashe a cikin 4H-SiC.J. Aikace-aikace. ilimin lissafi 124, 095702 (2018).
Kimoto, T. & Watanabe, H. Defect engineering in SiC technology for high-voltage power na'urorin. Kimoto, T. & Watanabe, H. Defect engineering in SiC technology for high-voltage power na'urorin.Kimoto, T. da Watanabe, H. Haɓaka lahani a cikin fasahar SiC don na'urorin wutar lantarki mai ƙarfi. Kimoto, T. & Watanabe, H. 用于高压功率器件的SiC 技术中的缺陷工程。 Kimoto, T. & Watanabe, H. Defect engineering in SiC technology for high-voltage power na'urorin.Kimoto, T. da Watanabe, H. Haɓaka lahani a cikin fasahar SiC don na'urorin wutar lantarki mai ƙarfi.aikace-aikacen kimiyyar lissafi Express 13, 120101 (2020).
Zhang, Z. & Sudarshan, TS Basal jirgin sama rarrabuwar kawuna-free epitaxy na silicon carbide. Zhang, Z. & Sudarshan, TS Basal jirgin sama rarrabuwar kawuna-free epitaxy na silicon carbide.Zhang Z. da Sudarshan TS Dislocation-free epitaxy na silicon carbide a cikin jirgin basal. Zhang, Z. & Sudarshan, TS 碳化硅基面无位错外延。 Zhang, Z. & Sudarshan, TSZhang Z. da Sudarshan TS Ragewa maras nauyi na silikon carbide basal jirage.sanarwa. ilimin lissafi. Wright. 87, 151913 (2005).
Zhang, Z., Moulton, E. & Sudarshan, TS Mechanism na kawar da rushewar jirgin sama na basal a cikin fina-finai na SiC na bakin ciki ta hanyar epitaxy a kan wani abu mai laushi. Zhang, Z., Moulton, E. & Sudarshan, TS Mechanism na kawar da rushewar jirgin sama na basal a cikin fina-finai na SiC na bakin ciki ta hanyar epitaxy a kan wani abu mai laushi.Zhang Z., Moulton E. da Sudarshan TS Mechanism na kawar da rushewar jirgin sama a cikin fina-finai na SiC na bakin ciki ta hanyar epitaxy a kan wani sinadari. Zhang, Z., Moulton, E. & Sudarshan, TS 通过在蚀刻衬底上外延消除SiC 薄膜中基面位错的机制。 Zhang, Z., Moulton, E. & Sudarshan, TS Hanyar kawar da fim din SiC na bakin ciki ta hanyar etching substrate.Zhang Z., Moulton E. da Sudarshan TS Mechanism na kawar da rushewar jirgin sama a cikin fina-finai na SiC na bakin ciki ta hanyar epitaxy a kan tarkace.aikace-aikacen physics Wright. 89, 081910 (2006).
Shtalbush RE et al. Katsewar girma yana haifar da raguwa a cikin ɓarnawar jirgin sama na basal yayin 4H-SiC epitaxy. sanarwa. ilimin lissafi. Wright. 94, 041916 (2009).
Zhang, X. & Tsuchida, H. Canjawar tarwatsewar jirgin saman basal zuwa ɓangarorin ɓarke a cikin 4H-SiC epilayers ta yanayin zafi mai zafi. Zhang, X. & Tsuchida, H. Canjawar tarwatsewar jirgin saman basal zuwa ɓangarorin ɓarke a cikin 4H-SiC epilayers ta yanayin zafi mai zafi.Zhang, X. da Tsuchida, H. Canji na basal jirgin sama dislocations zuwa threading baki dislocations a 4H-SiC epitaxial yadudduka ta high zafin jiki annealing. Zhang, X. & Tsuchida, H. 通过高温退火将4H-SiC 外延层中的基面位错转化为螺纹刃位错。 Zhang, X. & Tsuchida, H. 通过高温退火将4H-SiCZhang, X. da Tsuchida, H. Canji na rushewar jirgin sama zuwa ɓangarorin filament gefuna a cikin 4H-SiC epitaxial layers ta yawan zafin jiki annealing.J. Aikace-aikace. ilimin lissafi. 111, 123512 (2012).
Song, H. & Sudarshan, TS Basal jirgin tarwatsewar jujjuyawar da ke kusa da abin dubawa na epilayer/ substrate a cikin ci gaban epitaxial na 4° kashe-axis 4H-SiC. Song, H. & Sudarshan, TS Basal jirgin tarwatsewar jujjuyawar da ke kusa da abin dubawa na epilayer/ substrate a cikin ci gaban epitaxial na 4° kashe-axis 4H-SiC.Song, H. da Sudarshan, TS Canjin canjin jirgin sama na basal kusa da layin epitaxial Layer / substrate interface yayin ci gaban epitaxial na 4H-SiC. Song, H. & Sudarshan, TS 在4° 离轴4H-SiC 外延生长中外延层/衬底界面附近的基底平面位错转换。 Song, H. & Sudarshan, TS 在4° 离轴4H-SiC Song, H. & Sudarshan, TSTsarin rarrabuwar kawuna na tsaka-tsaki kusa da Layer na epitaxial/ iyaka a lokacin haɓakar epitaxial na 4H-SiC a waje da axis 4°.J. Crystal. Girma 371, 94-101 (2013).
Konishi, K. et al. A babban halin yanzu, yaɗuwar kuskuren karkatarwar jirgin sama a cikin 4H-SiC epitaxial layers yana canzawa zuwa ɓarna gefen filament. J. Aikace-aikace. ilimin lissafi. 114, 014504 (2013).
Konishi, K. et al. Ƙirƙirar yadudduka na epitaxial don SiC MOSFETs marasa lalacewa ta hanyar gano tsawaita wuraren ɓoye ɓoyayyiyar ɓarna a cikin binciken yanayin yanayin X-ray mai aiki. AIP Advanced 12, 035310 (2022).
Lin, S. et al. Tasirin tsarin karkatarwar jirgin saman basal akan yaduwa na nau'in nau'in Shockley guda ɗaya yayin lalatawar 4H-SiC fil diodes. Japan. J. Aikace-aikace. ilimin lissafi. 57, 04FR07 (2018).
Tahara, T., et al. Ana amfani da gajeriyar ɗan ƴan tsiraru masu ɗaukar rayuwa a cikin 4H-SiC epilayers masu arzikin nitrogen don murkushe kurakuran tari a cikin diodes na PiN. J. Aikace-aikace. ilimin lissafi. 120, 115101 (2016).
Tahara, T. et al. Dogaro da jigilar jigilar jigilar allura na yaɗa kuskuren Shockley guda ɗaya a cikin 4H-SiC PiN diodes. J. Aikace-aikace. Physics 123, 025707 (2018).
Mae, S., Tawara, T., Tsuchida, H. & Kato, M. Microscopic FCA tsarin don zurfin ma'aunin rayuwa mai ɗaukar nauyi a cikin SiC. Mae, S., Tawara, T., Tsuchida, H. & Kato, M. Microscopic FCA tsarin don zurfin ma'aunin rayuwa mai ɗaukar nauyi a cikin SiC.Mei, S., Tawara, T., Tsuchida, H. da Kato, M. FCA Microscopic System for Depth-Resoluved Carrier Lifetime Assessment in Silicon Carbide. Mae, S., Tawara, T., Tsuchida, H. & Kato, M. 用于SiC 中深度分辨载流子寿命测量的显微FCA 系统。 Mae, S., Tawara, T., Tsuchida, H. & Kato, M. Don matsakaicin zurfin zurfin SiCMei S., Tawara T., Tsuchida H. da Kato M. Micro-FCA tsarin don zurfin warware ma'aunin rayuwa mai ɗaukar hoto a cikin silicon carbide.Dandalin kimiyyar almajirai 924, 269-272 (2018).
Hirayama, T. et al. Zurfin rarraba tsawon rayuwa mai ɗaukar kaya a cikin kauri na 4H-SiC epitaxial yadudduka an auna ba lalacewa ta hanyar amfani da ƙudurin lokaci na ɗaukar jigilar kaya kyauta da haye haske. Canja zuwa kimiyya. mita. 91, 123902 (2020).
Lokacin aikawa: Nuwamba-06-2022
